AlC-(X3Ⅱ,a1∑+,b1△,c1Ⅱ)光谱属性的B3LYP研究

选择6-311++G(2df)、6-311++G(3df)、cc-PVDZ、AUG-cc-PVDZ、cc-PVTZ、AUG-cc-PVTZ六种不同的基组,应用密度泛函理论的B3LYP方法,对双原子分子离子AlC-的基态X3Ⅱ和第二激发态a1∑+的结构、光谱常数和分子属性进行了详细的理论研究.通过对六个基组的计算结果与以往文献报道的数据的比较,得到AUG-cc-PVTZ基组是六个基组中最优基组.使用AUG-cc-PVTZ基组,对AlC-的第三激发态b1△和第四激发态以c1Ⅱ进行了单点能扫描计算,并计算了其光谱数据.部分光谱数据还是第一次给出理论的报道.     

First-principles study of SnS electronic properties using LDA,PBE and HSE06 functionals

Recently, tin sulphide (SnS) has emerged as a promising alternative to conventional CIGS and CZTC for use in solar cells, possessing such properties as non-toxicity, low cost and production stability. SnS has a high theoretically predicted efficiency above 20%, but the experimentally achieved efficiency so far is as low as 4.36%. The reason for the low achieved efficiency is unclear. One of the powerful tools to get deeper insights about the nature of the problem is first-principles calculation approaches. That is why SnS has become an attractive subject for first-principles calculations recently. Previously calculated data, however, show a widespread of such fundamental value as the bandgap varying from 0.26 to 1.26 eV. In order to understand a reason for that, in this work, we concentrate on a systematic study of calculation parameters effects on the resulting electronic structure, with the particular attention paid to the influence of the exchange-correlation functional chosen for calculations. Several exchange-correlation functionals (LDA, PBE and HSE06) were considered. The systematic analysis has shown that the bandgap variation can result from a tensile/compressive hydrostatic pressure introduced by non-equilibrium lattice parameters used for the calculations. The study of the applicability of three functionals has shown that HSE06 gives the best match to both experimentally obtained bandgap and the XPS valence band spectra. LDA underestimates the bandgap but qualitatively reproduces experimentally measured valence DOS similar to that of HSE06 in contrast to PBE. PBE underestimates the bandgap and does not match to the measured XPS spectra.     

Theoretical investigations on structural, elastic and electronic properties of thallium halides

Theoretical investigations on structural, elastic and electronic properties, viz. ground state lattice parameter, elastic moduli and density of states, of thallium halides (viz. TlCl and TlBr) have been made using the full potential linearized augmented plane wave method within the generalized gradient approximation (GGA). The ground state lattice parameter and bulk modulus and its pressure derivative have been obtained using optimization method. Young's modulus, shear modulus, Poisson ratio, sound velocities for longitudinal and shear waves, Debye average velocity, Debye temperature and Grüneisen parameter have also been calculated for these compounds. Calculated structural, elastic and other parameters are in good agreement with the available data.     

Theoretical calculations on structural and electronic properties of BGaAsBi alloys

The structural and electronic properties of cubic B _x Ga_1?x As_1?y Bi _y alloys with bismuth (Bi) concentration of 0.0625, 0.125, 0.1875 and 0.25 are studied with various boron (B) compositions by means of density functional theory (DFT) within the Wu-Cohen (WC) exchange correlation potential based on generalized gradient approximation (GGA). For all studied alloy structures, we have implemented geometric optimization before the volume optimization calculations. The obtained equilibrium lattice constants and band gap of studied quaternary alloys are investigated for the first time in literature. While the lattice constant behavior changes linearly with boron concentration, increasing small amount of bismuth concentration alter the lattice constant nonlinearly. The present calculation shows that the band gap decreases with increasing bismuth concentration and direct band gap semiconductor alloy became an indirect band gap with increasing boron concentration. From the band offset calculation we have shown that increasing B and Bi concentration in host GaAs reduced the valance band offset in a heterostructure formed by GaAs and studied alloys.     

Theoretical prediction of structural, electronic and optical properties of quaternary alloy Zn1-xBexSySe1-y

Within density functional theory based on the full potential-linearized augmented plane wave method,we carry out the first-principles calculation of the structural,electronic,and optical properties of the zinc blende quaternary alloy Zn_1-xBe_xS_ySe_1-y.The Perdew-Burke-Ernzerhof generalized gradient approximation based on the optimization of total energy and the Engel-Vosko generalized gradient approximation based on the optimization of the corresponding potential are used.Our investigation on the effect of the composition on lattice constants,bulk modulus,band gap,optical dielectric constant,and refractive index shows a non-linear dependence.The energy gap E g（x,y） has been determined over the entire compositions x and y.In addition,the energy band gap of the technologically important quaternary alloy Zn_1-xBe_xS_ySe_1-y in conditions of being lattice matched to ZnS substrate has been investigated.It is noteworthy that the present work is the first theoretical study of the quaternary alloy of interest.     

Theoretical study of BeO: structural and electronic properties

The pseudopotential method is used to examine the static structural and electronic properties of BeO. At zero pressure, the wurtzite phase is found to be more stable in energy than the zincblende. At high pressure, we predict a phase transformation into an insulating rocksalt structure. The calculated charge density for the valence electrons is in good agreement with experiment.     

Electronic structure,physico-chemical,linear and non linear optical properties analysis of coronene, 6B-, 6N-, 3B3N- substituted C24H12 using RHF,B3LYP and wB97XD methods

In this work we have investigated the effects of substituting carbon atoms with B, N and BN on the electronic structure, physico-chemical, linear and non linear optical properties of Coronene (C24H12) using HF and DFT methods. We have calculated total electronic energy E₀, zero point vibrational energy ZPVE, the enthalpy H, entropy S, molar heat capacity at constant volume C_v, ionization potential IP, electron affinity EA, hardness \(\kappa\), softness \(\vartheta\), electronegativity EN, dipole moment µ, average polarizability \(< \alpha >\), anisotropy \(\Delta \alpha\), the first molecular hyperpolarizability β_mol, second order hyperpolarizability \(\gamma_{av}\), HOMO–LUMO Energy gap E_gap, work function E_F, refractive index n, susceptibility χ, dielectric constant ε and molar refractivity MR of coronene (C24H12), the 6B-, 6N- and 3B3N- substitute-doped C24H12 C18B6H12 C18N6H12 and C18B3N3H12. The E_gap values of the molecules are between 0.91 and 2.36 eV. We observed that β_mol changes slightly when C24H12 is doped with either 6B or 6N even though their β_mol values are too small. However, by doping C24H12 with both 3B and 3N, creating a strong donor–acceptor system, a very large increase in µ and β_mol was found for C18B3N3H12. This study was done using RHF, B3LYP and wB97XD methods with the cc-pVDZ basis set. The studies have shown that doping decreases some of the above properties significantly while some increases significantly compared to pure coronene, suggesting that 6B-, 6N-, and 3B3N-doped Coronene as serious candidates for electronics, optoelectronics and photonic devices.     

First principles study on the structural,electronic and phonon properties of monolayer B2Si

Using first principles density functional theory, we predict a monolayer B₂Si structure with space group Pmm2 in the present work. This structure is confirmed to be dynamically stable. Based on the plane wave pseudopotential approach, the charge density, electron localization function, density of states, energy band, phonon property and thermal conductivity of Pmm2-B₂Si are systematically studied. It is interesting that the sp² hybridization and coordination bond of Si are found in Pmm2-B₂Si, which is the most important factor for its structural stability. The density of states and energy band analysis reveals that Pmm2-B₂Si is metallic because of the partial occupied Si 3pz and B 2pz states. Moreover, the acoustic-optical coupling is important for phonon transport in Pmm2-B₂Si, and the contribution of optical modes to the lattice thermal conductivity along the [100] and [010] directions is 13% and 12%, respectively. This study gives a fundamental understanding of the structural, electronic and phonon properties in Pmm2-B₂Si.     

Theoretical investigation on structural, magnetic and electronic properties of ferromagnetic GdN under pressure

The tight-binding linear muffin tin orbital (TB-LMTO) method within the local density approximation is used to calculate structural, electronic and magnetic properties of GdN under pressure. Both nonmagnetic (NM) and magnetic calculations are performed. The structural and magnetic stabilities are determined from the total energy calculations. The magnetic to ferromagnetic (FM) transition is not calculated. Magnetically, GdN is stable in the FM state, while its ambient structure is found to be stable in the NaCl-type (B₁) structure. We predict NaCl-type to CsCl-type structure phase transition in GdN at a pressure of 30.4 GPa. In a complete spin of FM GdN the electronic band picture of one spin shows metallic, while the other spin shows its semiconducting behavior, resulting in half-metallic behavior at both ambient and high pressures. We have, therefore, calculated electronic band structures, equilibrium lattice constants, cohesive energies, bulk moduli and magnetic moments for GdN in the B₁ and B₂ phases. The magnetic moment, equilibrium lattice parameter and bulk modulus is calculated to be 6.99 μ_B, 4.935 Å and 192.13 GPa, respectively, which are in good agreement with the experimental results.     

Theoretical prediction of structural,elastic and electronic properties of Si-doped TiCuGe intermetallics

The structural, elastic and electronic properties of TiCuGe_1?xSi_x alloys (x = 0, 0.25, 0.5, 0.75 and 1) were investigated by means of first-principles calculations within the framework of density functional theory (DFT). The calculated results demonstrate that the partial substitution of Si with Ge in TiCuGe leads to a decrease of lattice constants, and the optimized structural parameters are in agreement with the available experimental values. The results of electron density are compared with the theoretical and experimental data from the literature. From energetic point of view, it is found that with increase of Si content the structural stability of TiCuGe_1?xSi_x compounds increases apparently. The single-crystal elastic constants are obtained by computing stress–strain function according to Hooke's law, and then the bulk modulus B, shear modulus G, Young's modulus E and Poisson's ratio ν of polycrystalline aggregates are derived. The calculated results show that among the TiCuGe_1?xSi_x alloys, TiCuGe_0.75Si_0.25 exhibited the largest stiffness, while TiCuGe_0.25Si_0.75 showed the best ductility. Finally, the electronic density of states (DOSs) are further studied and discussed.     

Theoretical investigation of sulfur defects on structural,electronic,and elastic properties of ZnSe semiconductor

The structural, electronic, and elastic properties of Zn Se1-xSx for the zinc blende structures have been studied by using the density functional theory. The calculations were performed using the plane wave pseudopotential method, as implemented in Quantum ESPRESSO. The exchange-correlation potential is treated with the local density approximation pz-LDA for these properties. Moreover, LDA+U approximation is employed to treat the "d" orbital electrons properly. A comparative study of the band gap calculated within both LDA and LDA+U schemes is presented. The analysis of results show considerable improvement in the calculation of band gap. The inclusion of compositional disorder increases the values of all elastic constants. In this study, it is found that elastic constants C11, C12, and C44 are mainly influenced by the compositional disorder. The obtained results are in good agreement with literature.     

Theoretical and experimental investigation on structural and electronic properties of Al/O/Al,O-doped WS2

Effects of the doping atom (O, Al, and (Al, O)) on structural and electronic properties of the monolayer WS₂ have been studied by using first-principles calculations. Results show that the covalent character of W–S bonding has been enhanced after doping. Meanwhile, W–O, Al–S and W–S bonds of (Al, O) co-doped WS₂ monolayer have higher covalent character compared with O-doped and Al-doped WS₂ monolayer of this work. After doping with Al (or Al, O) atoms, Fermi level moves close to the valence band and the dopant atoms produce the defect energy levels, indicating that Al doped and (Al, O) co-doped WS₂ monolayer both have p-type conductivity. O-doped and (Al, O) co-doped WS₂ ultrathin films was prepared on Si substrates. Results of Raman spectra show the formation of the O-doped and (Al, O) co-doped WS₂ films. Moreover, compared with the pure WS₂, the approximate reduction of 0.43 eV and 0.46 eV for W 4f and S 2p in binding energy after (Al, O) co-doped shows that p-type doping of (Al, O) co-doped WS₂ has been verified.     

六角氮化硼纳米带的几何和电子结构理论研究

本文采用密度泛函B3LYP方法在6-31G*水平上,对一系列不同宽度的锯齿型和扶手椅型六角氮化硼纳米带进行了理论研究。结果表明纳米带宽度对体系的性质有规律性的影响。随着宽度的增加,纳米带不同位置的硼氮键键长差异逐步减小从而提高了整个体系的共轭性;锯齿型纳米带的能隙单调减小而扶手椅型纳米带的能隙在减小的同时出现振荡,且振幅随宽度逐渐减小。锯齿型氮化硼纳米带的化学势在特定宽度出现了极值点。前线分子轨道的分布随着宽度的增加出现了非均匀分布,呈现出向边界偏移的现象。     

六角氮化硼纳米带的几何和电子结构理论研究

本文采用密度泛函B3LYP方法在6-31G*水平上，对一系列不同宽度的锯齿型和扶手椅型六角氮化硼纳米带进行了理论研究。结果表明纳米带宽度对体系的性质有规律性的影响。随着宽度的增加，纳米带不同位置的硼氮键键长差异逐步减小从而提高了整个体系的共轭性；锯齿型纳米带的能隙单调减小而扶手椅型纳米带的能隙在减小的同时出现振荡，且振幅随宽度逐渐减小。锯齿型氮化硼纳米带的化学势在特定宽度出现了极值点。前线分子轨道的分布随着宽度的增加出现了非均匀分布，呈现出向边界偏移的现象。     

Theoretical investigation on first-principles electronic and thermal properties of some CdRE intermetallics

Ab initio calculation on B2-cadmium rare earth (RE), CdRE (RE=La, Ce and Pr) intermetallics has been performed at T=0 K with respect to their structural, electronic and thermal properties. The structural and electronic properties are derived using self-consistent tight binding linear muffin tin orbital method at ambient and at high pressure. Other properties like lattice parameter, bulk modulus, density of states, electronic specific heat coefficient, cohesive energy, heat of formation, Debye temperature and Grüneisen constant for CdRE are also estimated. The RE-f effect can be seen in CdPr in terms of variation in the density of states and opens a possibility of structural instability. A pressure induced variation of Debye temperature is also presented for three cadmium rare earth intermetallics.     

块状NiSe2的电学，光学和热力学性质的理论研究

在密度泛函理论框架下通过平面波赝势的第一原理计算,研究了块体材料NiSe2的电学,光学和热力学性质.根据计算得到的立方晶体（空间群：PM3,No：200）的能量-体积曲线,获得了最低能量的最优结构.基于能带结构和电子态密度结构计算的结果表明,NiSe2为半金属.当有电磁波穿过块体NiSe2时,通过非自洽计算,分析介电函数的实部和虚部得到了能量损失函数谱,反射率,吸收谱,折射系数和消光系数.在准谐波德拜模型的基础上,我们还研究了NiSe2的热力学性质.     

First-principles study of structural and electronic properties of Cd3P2

First-principles linear combination of atomic orbitals method within the framework of density functional theory is applied to study structural and electronic properties of tetragonal and cubic phases of Cd₃P₂. The equilibrium lattice constants and bulk moduli deduced from Murnaghan equation of state for the two structures are in good agreement with the experiment. Enthalpy–pressure curves do not show possibility of pressure induced structural phase transitions between the two structures up to 80 GPa. Electronic band structures and Mulliken population analysis for the two structures are presented. It is found that tetragonal Cd₃P₂ has direct band gap 1.38 eV while cubic structure shows indirect band gap of 0.35 eV. The branch point energies for the tetragonal structure lie below the conduction band while for cubic structure it lies in the conduction band. Mulliken population analysis shows that occupancies in 5sp, 6sp and 5d states of Cd and 3sp and 4sp states of P are largely affected on bond formation.     

Theoretical studies on the structural, electronic, and optical properties of Cu2CdGeSe4

We investigate the electronic structure for Cu₂CdGeSe₄ in stannite structure with the first-principles method. This crystal is the direct band gap compound. In addition, the dielectric function, absorption coefficient, reflectivity, and energy-loss function are studied using the density functional theory within the generalized gradient approximation. We discuss the optical transitions between the valence bands and the conduction bands in the spectra of the imaginary part of the dielectric function at length. We also find a very high absorption coefficient and wide absorption spectrum for this material. The prominent structures in the spectra of reflectivity and energy-loss function are discussed in detail.     

一氟化碳电子态的光谱性质和预解离机理的理论研究

采用考虑Davidson修正的内收缩多参考组态相互作用(icMRCI+Q)方法结合相关一致基组aug-cc-pV5Z和aug-cc-pV6Z首次计算了一氟化碳(CF)11个Λ-S 态(X²Π , a⁴Σ^-, A²Σ⁺, B²Δ, 1⁴Π, 1²Σ^-, 2⁴Π, 1^{4}Δ , 1⁴Σ⁺, 2²Σ^-和2⁴Σ^-) 所产生的25个Ω 态的势能曲线. 计算中考虑了旋轨耦合效应、核价相关和标量相对论修正以及将参考能和相关能分别外推至完全基组极限. 基于得到的势能曲线, 获得了束缚和准束缚的Λ-S态和Ω 态的光谱常数, 与已有的实验结果非常符合. 分析了束缚和准束缚的Λ-S态在各自平衡核间距R_e处的主要电子组态. 由于1⁴Π 和2⁴Π态的避免交叉, 发现准束缚态2⁴Π. 由Λ-S态势能曲线的交叉现象, 借助于计算的旋轨耦合矩阵元, 分析了a⁴Σ^-和B²Δ 态的预解离机理. 计算了25个Ω 态的离解关系, 给出了它们的离解极限. 最后研究了A²Σ⁺-X²Π 跃迁特性, 本文计算得到的A²Σ⁺-X²Π跃迁的Frank-Condon 因子和辐射寿命与已有实验值也符合得非常好.     

Theoretical studies on the structural, electronic, and optical properties of Ag2HgSnSe4

We investigate the electronic structure of Ag₂HgSnSe₄ in a wurtzite-stannite structure with the first principles method. This crystal is a direct band-gap compound. In addition the dielectric function, absorption coefficient, reflectivity, and energy-loss function are studied using the density functional theory in the generalized gradient approximation. We discuss the optical transitions between the valence bands and the conduction bands in the spectrum of the imaginary part of the dielectric function at length. We also find a very high absorption coefficient and a wide absorption band for this material. The prominent structures in the spectra of reflectivity and the energy-loss function are discussed in detail.