Fluorescence induction changes in bean leaves after heat treatment

The regularities in the alterations of chlorophyll a fluorescence induction curves of bean leaves after short (15 min) heating in the range of temperatures from 24 to 45°C were determined. A dramatic decrease in the relative f luorescence quenching (F_P–F_T)/F_T, as well as the F_v/_Fm ratio, were observed after heating at temperatures above 38°C, which indicates a decrease in the photochemical activity of photosystem II. The effect of an increase in the resistance of the photosynthetic apparatus to the temperature of 43°C after preheating at 37°C was demonstrated.     

Off-axis compressed holographic microscopy in low-light conditions

This Letter reports a demonstration of off-axis compressed holography in low-light level imaging conditions. An acquisition protocol relying on a single exposure of a randomly undersampled diffraction map of the optical field, recorded in the high heterodyne gain regime, is proposed. The image acquisition scheme is based on compressed sensing, a theory establishing that near-exact recovery of an unknown sparse signal is possible from a small number of nonstructured measurements. Image reconstruction is further enhanced by introducing an off-axis spatial support constraint to the image estimation algorithm. We report accurate experimental recovering of holographic images of a resolution target in low-light conditions with a frame exposure of 5 μs, scaling down measurements to 9% of random pixels within the array detector.     

蚕豆病害叶的FTIR研究

用傅里叶变换红外光谱技术结合统计分析对蚕豆锈病、茎基腐病、轮纹病、黄化卷叶病和正常叶片进行鉴别研究。结果显示病害叶片和正常叶片的红外图谱相似,仅有几个吸收强度比存在差异;对光谱进行二阶导数分析发现,病害叶片和正常叶片的二阶导数光谱在1 200～700cm-1范围差异明显,对该区域内的光谱数据进行相关分析、主成分分析和聚类分析,结果显示,正常叶片之间、同种病害样品之间相关系数都在0.928以上,而病害叶片和正常叶片以及不同病害样品之间的相关系数降低;45个样品聚类分析和主成分分析正确率分别为73.3%和82.2%。傅里叶变换红外光谱技术具有快速、无损、准确等优点,有望为蚕豆病虫害诊断提供新的方法与途径。     

Electron paramagnetic resonance of amorphous hydrogenated carbon grown under different conditions of deposition

Results from electron paramagnetic resonance (EPR) studies of amorphous hydrogenated carbon (a-C:H) obtained on a quartz substrate under different conditions of deposition E/p (where E is the electric field intensity between the electrodes, and p is the pressure of the gas mix in the capacitive chamber) and temperature of the substrate are presented. Correlations between the EPR line amplitude, spin density, and g-factor, and the optical, electrical, and mechanical properties of a-C:H are found.     

Study of InAs/GaAs quantum dots grown by MOVPE under the safer growth conditions

InAs quantum dots (QDs) have been formed on GaAs (001) substrate by metal-organic vapor phase epitaxy (MOVPE) under the safer growth conditions: using tertiarybutylarsine (TBA) to replace AsH₃ as the arsenic source and replacing hydrogen by pure nitrogen as the carrier gas. Effects of growth conditions on the QD formation have been investigated. It is observed that the wetting layer is stabilized with some material being transferred to form the QDs due to the strain relaxation process during the QD formation. Dot size dispersion becomes broader when the post-growth interruption is more than 20 s. Compared with normal one-step grown QDs, dot density increases greatly by 213% after employing two-step deposition for QD growth. This is explained by considering the indium-flux-dependent nucleation density at step 1 and kinetically self-limiting growth at step 2. The two photoluminescence (PL) emission peaks, 1.203 μm and 1.094 μm, from the two-step grown QDs are attributed to E1–HH1 and E1–LH1 transitions of the QDs, respectively. The measured results agree well with those received by an 8 k·p theoretical calculation. The narrow PL linewidth of ~50 nm shows high quality of the QDs. This paves the way to develop safer MOVPE process, using TBA/N₂ instead of AsH₃/H₂, to grow QDs for device application.     

Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions

Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ℃and pressures of 5.3-5.5 GPa.Because of the presence of sulfur additive,the morphology and color of the large diamond crystals change obviously.The content and shape of inclusions change with increasing sulfur additive.It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive,which results in left down of the V-shape region.The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals.The x-ray photoelectron spectroscopy(XPS) spectra show the presence of S in the diamonds.Furthermore,the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method.When sulfur in the cell of diamond is up to 4.0 wt.%,the resistance of the diamond is 9.628×10~5 Ω·cm.It is shown that the large single crystal samples are n type semiconductors.This work is helpful for the further research and application of sulfur-doped semiconductor large diamond.     

Direct determination of mineral nutrients in soybean leaves under vivo conditions by portable X-ray fluorescence spectroscopy

A portable energy dispersive X-ray fluorescence (XRF) spectrometer furnished with an Rh X-ray tube was evaluated for the determination of macronutrients and micronutrients in soybean leaves (Glycine max L.). XRF instrumental parameters were optimized in a univariate way, and emission intensities were measured for 60 s and under vacuum for macronutrients, and during 180 s, under air, and 305 μm Al/25.4 μm Ti filter, for micronutrients. Fresh and dried leaves were irradiated, and it was possible to identify P, K, Ca, S, Mn, Fe, Cu, and Zn Kα emission lines. For comparative purpose, the samples were also microwave assisted, digested and analyzed by inductively coupled plasma optical emission spectrometry. In general, linear correlations between K, Ca, Mn, Fe, Cu, and Zn concentrations in the tested samples and the corresponding portable XRF (pXRF) intensities were obtained. The linear correlation coefficients (R²) ranged from 0.42 to 0.86. In addition, the detection limits were suitable for plant nutrient diagnosis. It is demonstrated that pXRF is a simple and powerful tool for analysis of plant materials.     

罗丹明101的高压荧光特性

 测定了粉末罗丹明101（Rhodamine 101）及其在溶剂（甲醇、乙醇、水的混合液）中的高压荧光光谱。结果表明,粉末样品和溶液样品在高压下的发光性质有很大的区别。对于粉末样品,随着压力的增加,Rhodamine 101的荧光强度下降很快,在大约8 GPa时荧光峰几乎消失;伴随着荧光强度的变化,荧光峰峰位发生了显著红移（8 GPa内红移了近100 nm）。对于溶液样品,其荧光强度随压力的增加降低较慢,到13 GPa时,强度约为常压的10%,荧光峰峰位红移较小（13 GPa内红移约50 nm）。在压力作用下,Rhodamine 101分子结构的变化和特殊的溶剂效应,分别是影响其在粉末状态和溶液中荧光性质的主要因素。     

Reduction of evaporative flux in bean leaves due to chitosan treatment assessed by infrared thermography

Infrared thermography can be used as a tool for evaluating antitranspirant treatment through the measurement of evaporative fluxes. The aim of this work is to compare the leaf surface temperatures of plant treated with chitosan (CHT), a potential stomatal-closing antitranspirant, with temperatures of leaves treated with the commercially available antitranspirant Vapor Gard®, a film-forming polyterpene. The main problem in the correct evaluation of stomatal conductance at leaf level is due to the need of performing a measurement in a completely non-invasive method. The main advantage of thermographic method is the possibility to acquire information about instantaneous conditions of transpiration over a large number of plants, with no need of sampling and avoiding any contact with plants.Tests on bean plants (Phaseolus vulgaris) showed the applicability of the thermal imaging to discriminate plants with different evaporation rate due to treatment with different antitranspirant compounds. Quantitative evaluation of evaporative flux and stomatal conductance was obtained through reference measurements on standards with calibrated conductance. Non-destructive gravimetric measurements were used in order to get a reliable evaluation of evaporative fluxes. In conclusion, thermographic approach, in climatic chamber, seems to be a valid tool for rapidly screening the performance of different antitranspirant products.     

Relationship of properties of MBE grown GaAs layers with growth conditions

Reflection medium energy electron diffraction, scanning electron microscope and measurements of angular dependence of reflectivity in vacuum ultraviolet region, low-temperature photoluminescence and Hall effect were used to study surface structure and morphology and optical and electrical properties of GaAs layers grown by molecular beam epitaxy (MBE) and influence of growth conditions on their properties. The quality of MBE GaAs layers depends strongly on the growth conditions. The residual background impurities in MBE system and other contamination sources degrade the optical and electrical quality and can influence the formation of macroscopic defects. The incorporation of background impurities and the formation of vacancy-impurity complexes are dramatically affected by As₄ to Ga flux ratio at a given growth temperature and suppressed strongly under growth conditions with slight As excess which ensures to maintain the As-stabilised surface. The growth under such conditions results in improved electrical and optical properties and satisfactory surface morphology.The authors are indebted to Dr. J. Oswald for the measurements of PL spectra, to Drs. M. imecková and K. Jurek for their kind assistance in SEM investigation and for taking SEI and X-ray microprobe analyses, to Ing. O. tika for the measurements of thickness of the layers and to Dr. P. Doubrava for the Hall effect measurements in several samples. For the use of facilities to measure the Hall effect the thanks are also due to Dr. V. míd.     

MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions

The paper reports on photoelectrical performance of the mid-wave infrared HgCdTe detector for high operating temperature condition. Detector structure was simulated with APSYS numerical platform by Crosslight Inc. The comprehensive analysis of the detector performance such as dark current, detectivity, time response vs. device architecture and applied bias has been performed. The N⁺pP⁺n⁺ HgCdTe heterostructure photodiode operating in room temperature at a wavelength range of 2.6–3.6 μm enabled to reach: detectivity ～8.7×10¹⁰ cmHz^1/2/W, responsivity ～1.72 A/W and time response ～ 145 ps (V = 200 mV).     

Luminescent characteristics of Vicia faba L. bean leaves treated with SCF extracts of Reynoutria sachalinensis

The effect of supercritical fluid (SCF) extracts of giant knotweed (Reynoutria sachalinensis) on the photosynthetic activity of Vicia faba L. bean leaves was studied by the slow fluorescence induction (SFI) and thermoluminescence (TL) methods. The treatment of plants enhanced their photosynthetic activity. The maximum stimulating effect was observed for an extract prepared using carbon dioxide containing 2% ethanol as a cosolvent. The observed stimulating effect is believed to be associated with an increase in the number of electron carries in the photosynthetic electron transport chain of plant leaves due to the flux of quinonic compounds into plant cells.     

Surface‐enhanced Raman spectroscopy of DNA from leaves of in vitro grown apple plants

Ultrasensitive Raman measurements of nucleic acids are possible by exploiting the effect of surface‐enhanced Raman scattering (SERS). In this work, the vibrational spectra of eight genomic DNAs from in vitro grown apple leaf tissues (Malus domestica Borkh., Fam Rosaceae, cvs. Florina, Idared, Rebra, Goldrush, Romus 3, Romus 4 and the rootstocks M9 and M26) were analyzed using surface‐enhanced Raman spectroscopy, in the wavenumber range 200–1800 cm⁻¹. SERS signatures, spectroscopic band assignments and structural interpretations of these plant genomic DNAs are reported. Strong dependences of the SERS spectra on genomic DNA amount in the measured sample volume and on time were observed. Similarities of the SERS signals of DNAs from Rebra and Romus 3 leaves were detected. To our knowledge, this is the first SERS study on genomic DNA from leaf tissues. The present work provides a basis for future use of surface‐enhanced Raman spectroscopy to analyze specific plant DNA–ligand interactions or DNA structural changes induced by plants' stress conditions associated with their natural environment. Besides, this study will generate information that is valuable in the development of low‐level plant DNA‐based analytical sensors. Copyright © 2010 John Wiley & Sons, Ltd.     

Photoluminescence of ZnTe crystals grown under deviation from thermodynamic equilibrium

Crystalline textured and columnar structures, as well as needlelike ZnTe single crystals, were grown from the vapor phase and in a tellurium melt under deviation of the growth conditions from equilibrium. Low-temperature photoluminescence and x-ray structural studies showed the samples thus grown to exhibit high structural perfection, a uniform impurity distribution, and weak interaction between impurities and defects of the crystal structure. Polariton scattering from neutral donors was detected in structures having a noticeable residual concentration of donors in the substituted state. It is shown that the spectrum of samples grown under nonequilibrium conditions exhibits transitions that are not typical of equilibrium crystals. Measurements of the luminescence spectra as a function of temperature, excitation level, and annealing conditions made it possible to draw tentative conclusions about the nature of these transitions.     

Photoconductors under transverse sweep-out conditions

In semiconductors with induced anisotropy of conductivity the influence of transverse carrier drift on the main photodetector parameters is investigated. The effect is connected to the change in bulk and surface contributions to the total recombination flow. The calculated and experimental dependences of sensitivity, response time, spectral sensitivity and noise on transverse drift rate, bulk lifetime and surface recombination velocities are obtained. It is shown that the transverse carrier sweep-out makes it possible to stabilize detector parameters at certain values. Experiments are performed on InSb and CdHgTe samples placed in crossed electric and magnetic fields.     

Polarization of radiation under superradiance conditions

A theoretical study is made of the polarization properties of superradiance emitted by gases in a high-current longitudinal discharge. It is shown that the Zeeman effect in the discharge current makes the radiation at the periphery of a light beam totally polarized. Formulas are derived for relating the degree of polarization of a light beam with the dependences of the gain profile on the frequency and on the transverse coordinate. An analysis is made of the influence of diffraction on the polarization properties of a light beam and the anisotropic waveguide modes are found. A calculation is made of the distribution of the intensity of the optical field when radiation is generated between crossed Polaroids at the exit end of the discharge tube.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 51–56, May, 1980.The authors are grateful to A. I. Odintsov and V. P. Yakunin for frequent discussions.     

Probe-field spectroscopy under conditions of self-saturation

Nonlinear absorption of a probe field is analyzed taking into account intrinsic spontaneous radiation (the self-saturation effect). Systems of two and three nondegenerate levels, as well as a system of two levels with the angular momenta equal to unity, are considered. Changes produced by the self-saturation in the population, polarization, and nonlinear interference effects, as well as in the field splitting of lines, are determined. In certain situations, incoherent spontaneous radiation enhances the interference phenomena.     

Space plasma under extreme conditions

Attributes of extreme conditions in space and the new properties which plasma acquires in this case are discussed. The discussion is focussed on the features of interaction between plasma and radiation in strong magnetic fields of degenerate stars—white dwarfs or neutron stars. The specific role of cyclotron scattering, radiation pressure at cyclotron frequencies, and vacuum birefringence in the formation of plasma envelopes and the observed spectra of these objects is pointed out. The contents of this paper provided the basis for the report at the scientific session of the General Physics and Astronomy Division of the Russian Academy of Sciences devoted to the eightieth anniversary of Vitaly L. Ginzburg. Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod; Max Plank Institut für Extraterrestrische Physik, Garching, Germany. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 40, Nos. 1–2, pp. 17–36, January–February, 1997.     

Bose-Einstein condensation under external conditions

We discuss the phenomenon of Bose-Einstein condensation under general external conditions using connections between partition sums and the heat-equation. Thermodynamical quantities like the critical temperature are given in terms of the heat-kernel coefficients of the associated Schrödinger equation. The general approach is applied to situations where the gas is confined by arbitrary potentials or by boxes of arbitrary shape.