Preparation and optical properties of ZnGa2O4:Cr thin films derived by sol-gel process

ZnGa₂O₄:Cr³⁺ thin films with bright red emission were synthesized using a sol-gel process, characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and UV-vis and fluorescence spectrophotometry measurements. Effects of calcining temperature, film thickness, calcining duration and substrates on the crystal structure and photoluminescent property have been investigated. It is found that the crystallinity, Ga/Zn ratio and band gap energy (E_g) are significant factors influencing optical characteristics, while the nature of substrates affect the surface morphologies of ZnGa₂O₄:Cr³⁺ thin films.     

Optical characteristics of transparent samarium oxide thin films deposited by the radio-frequency sputtering technique

Transparent metal oxide thin films of samarium oxide (Sm₂O₃) were prepared on pre-cleaned fused optically flat quartz substrates by radio-frequency (RF) sputtering technique. The as-deposited thin films were annealed at different temperatures (873, 973 and 1073 K) for 4 h in air under normal atmospheric pressure. The topological morphology of the film surface was characterized by using atomic force microscopy (AFM). The optical properties of the as-prepared and annealed thin films were studied using their reflectance and transmittance spectra at nearly normal incident light. The estimated direct optical band gap energy (\(E_{\mathrm {g}}^{\mathrm {d}}\)) values were found to increase by increasing the annealing temperatures. The dispersion curves of the refractive index of Sm₂O₃ thin films were found to obey the single oscillator model.     

Spectroscopic ellipsometry modeling of ZnO thin films with various O2 partial pressures

ZnO films were deposited on thermally oxidized SiO₂/p-type Si (100) substrates and glass substrates by DC magnetron sputtering using a metal Zn target. Three types of samples were prepared with various O₂/(Ar + O₂) ratios (O₂ partial pressure) of 20%, 50%, and 80%. The properties of these ZnO thin films were investigated using X-ray diffraction (XRD), optical transmittance, atomic force microscopy (AFM), and spectroscopic ellipsometry in the spectral region of 1.7–3.1 eV. The structural and optical properties of ZnO thin films were affected by O₂ partial pressure. Relationships between crystallinity, the ZnO surface roughness layer, and the refractive index (n) were investigated with varying O₂ partial pressure. It was shown that the spectroscopic ellipsometry extracted parameters well represented the ZnO thin film characteristics for different O₂ partial pressures.     

Gamma irradiation effects on structural and optical properties of amorphous and crystalline Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> thin films

The structural and optical properties of RF sputtered Nb₂O₅ thin films are studied before and after gamma irradiation. The films are subjected to structural and surface morphological analyses by using X-ray (XRD) and field emission scanning electron microscope techniques. In the wavelength range of 300–2000 nm, the optical parameters for amorphous and crystalline Nb₂O₅ thin films are estimated at differently exposed γ-irradiation doses (0, 50, 100 and 200 kGy). The optical constants, such as optical energy band gap, absorption coefficient, refractive index and oscillators parameters of amorphous and crystalline Nb₂O₅ thin films are calculated. The optical band gaps of γ-irradiated amorphous and crystalline Nb₂O₅ thin films are determined. In the non-absorbing region, the real part of the refractive index of amorphous and crystalline Nb₂O₅ thin films slightly increases with the increase in the exposed γ-irradiation dose.     

Effect of sputtering anisotropic ejection on the optical properties and residual stress of Nb2O5 thin films

The effect of sputtering anisotropic ejection on the optical properties and internal stress of niobium pentoxide (Nb₂O₅) films prepared by ion-beam sputtering deposition (IBSD) was investigated experimentally. Thin films were deposited on unheated BK7 glass substrates and silicon wafers at different ejection angles surrounding a metal target. The ejection angles varied from 0° to 75° in increments of 15° for each substrate. It was found that the optical constants of the Nb₂O₅ films were significantly influenced by the sputtering ejection angle. The surface roughness and residual stress in the Nb₂O₅ thin films were also found to vary with the ejection angle. In this work, Nb₂O₅ films had a higher refractive index, lower absorption, lower stress and lower roughness when films deposited at an ejection angle of 30°.     

Micro‐Raman characterization of laser‐induced local thermo‐oxidation of thin chromium films

Micro‐Raman spectroscopy was applied to the characterization of the chemical composition and topography of protective oxide layers formed under atmospheric conditions on the surface of thin chromium films. Strips of the layers were produced by local thermal heating using focused sub‐picosecond pulsed laser radiation. It is shown that a CrO₂ layer is initially formed on the chromium surface at low light exposures. Increasing the exposure results in the transformation of the CrO₂ layer to Cr₂O₃. The influence of the etching conditions on the composition and thickness of the oxide layers is investigated. The topography of the CrO₂ and Cr₂O₃ oxide layers in transverse sections of the strips is demonstrated by the Raman mapping. Copyright © 2011 John Wiley & Sons, Ltd.     

Profile of the refractive index distribution over the depth of (HfO2)x(Al2O3)1 ? x films

Capabilities of the method of laser null ellipsometry for the study of optical parameters of thin films of multicomponent alloys are demonstrated. Films of alloys (HfO₂) _x (Al₂O₃)_{1 − x} on single-crystal silicon are obtained by the chemical vapor deposition with the use of the following volatile compounds: hafnium dipivaloylmethanate (IV) and aluminum acetylacetonate (III). The selection of initial sets for their optical parameters is justified. The selected model is shown to correspond to experimental data. In films deposited from the mixture of precursors, the refractive index increases from a substrate to a film surface. Due to the separation of sources, films described by a single-layer model were deposited. This fact is indicative of the homogeneous distribution of components over the film thickness.     

Chemical bath deposition of hausmannite Mn3O4 thin films

A low-temperature chemical bath deposition (CBD) technique has been used for the preparation of Mn₃O₄ thin films onto glass substrates. The kinetic behavior and the formation mechanism of the solid thin films from the aqueous solution have been investigated. Structure (X-ray diffraction and Raman), morphological (atom force microscope), and optical (UV-vis-NIR) characterizations of the deposited films are presented. The results indicated that the deposited Mn₃O₄ thin films of smooth surface with nanosized grains were well crystalline and the optical bandgap of the film was estimated to be 2.54 eV.     

Thickness-dependence of optical constants for Ta2O5 ultrathin films

An effective method for determining the optical constants of Ta₂O₅ thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient–oxide–interlayer–substrate) was presented. Ta₂O₅ thin films with thickness range of 1–400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta₂O₅ ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta₂O₅. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.     

Synthesis of Cr-based mixed oxides by reactive ion beam mixing of Cr/X interfaces (X=Al or Si)

The 3 keV O₂⁺\mathrm{O}_{2}^{+} reactive ion beam mixing of Cr/X interfaces (X=Al or Si) has been used to synthesize Cr-based mixed oxide thin films. The kinetics of growth, composition, and electronic structure of those films has been studied using X-ray photoelectron spectroscopy, Auger electron spectroscopy, ultraviolet photoelectron spectroscopy, and factor analysis. Initially, for low ion doses, Cr₂O₃ species are formed. Later, with increasing the ion dose, Cr₂O₃ species are first transformed into Cr³⁺–O–X species, and subsequently, those Cr³⁺–O–X species are transformed into Cr⁶⁺–O–X species. This sequential transformation, Cr₂O₃→Cr³⁺–O–X→Cr⁶⁺–O–X, is accompanied by a slight increase of the oxygen concentration and a decrease of the Cr/X ratio in the films formed leading to the synthesis of custom designed Cr-based mixed oxides. The changes observed in the valence band and Auger parameters further support the formation of Cr–X mixed oxide species. Angle resolved X-ray photoelectron spectroscopy shows that for low ion doses, when only Cr₂O₃ and Cr³⁺–O–X species coexist, Cr³⁺–O–X species are located nearer the surface than Cr₂O₃ species, whereas for higher ion doses, when only Cr³⁺–O–X and Cr⁶⁺–O–X species coexist, the Cr⁶⁺–O–X species are those located nearer the surface.     

Effect of cycle numbers on the structural,linear and nonlinear optical properties in Fe2O3 thin films deposited by SILAR method

Fe₂O₃ thin films were deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates at different cycle numbers to investigate structural, linear and nonlinear optical properties. X-Ray Diffraction (XRD) analysis revealed that the Fe₂O₃ thin films have a non-crystalline nature. The morphological properties of the films were investigated by Field Emission-Scanning Electron Microscopy (FE-SEM) and the results show that the films’ surfaces are porous. The linear and nonlinear optical parameters were evaluated and analyzed by using transmittance and absorbance measurements. For these measurements, UV–Vis spectroscopy at room temperature was used. The refractive index values were calculated in the range of 1.45–3.23 for visible region (400–700 nm). Obtained results reveal that direct optical band gap changed between 2.62 and 2.68 eV and indirect optical band gap changed between 1.67 and 1.77 eV. Additionally, optical electronegativity, optical dielectric constants, surface and volume energy loss functions, nonlinear refractive index, linear optical susceptibility, third-order nonlinear optical susceptibility, optical and electrical conductivity, and loss tangent values were calculated and discussed in detail. It was found that each parameter studied is dependent on the cycle numbers. Also, it can be stated that Fe₂O₃ thin films are promising candidate for solar cells and optoelectronic device technology.     

Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO₂ ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO₂ films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO₂ based thin film catalysts is discussed.     

Nonlinear thickness dependence of two-photon absorptance in Al2O3 films

Linear and nonlinear absorptance in Al₂O₃ films of different optical thicknesses are investigated using an ArF laser calorimeter. While the linear absorptance at 193 nm shows the expected linear increase, nonlinear absorptance increases quadratically with increasing film thickness. Thus, it cannot be described by a constant nonlinear absorption coefficient β. The experimental findings are explained by a simple phenomenological approach using excited states with a finite interaction length longer than the actual film thickness. a new material constant Γ is introduced, which describes the nonlinear absorptance behavior correctly. Received: 19 May 2000 / Accepted: 22 May 2000 / Published online: 13 July 2000     

Transparent conductive electrodes for electrochromic devices: A review

This paper reviews the optical and electrical performance of thin films that are useful as transparent electrodes in electrochromic devices. The properties of certain heavily doped wide-bandgap semiconductor oxides (especially In₂O₃:Sn) and of certain coinage metal films are discussed.     

Metal clusters and nanoparticles in dielectric matrices: Formation and optical properties

The optical properties of thin dielectric films with metal inclusions and their dependence on thermal and laser annealing are studied experimentally. Metal clusters (Ag, Au, and Cu) in dielectric materials (Al₂O₃ and SiO₂) are obtained by simultaneous vacuum deposition of metal and dielectric on the surface of a corresponding dielectric substrate (sapphire and quartz). It is shown that, depending on the deposited dielectric material, on the weight ratio of deposited metal and dielectric, and on the subsequent thermal treatment, one can obtain different metal structures, from clusters with a small number of atoms to complex dendritic plasmonic structures.     

Thermoluminescence of Al2O3:Cr3+ films synthesized by the nonaqueous sol–gel method

The thermoluminescence (TL) properties of Al₂O₃:Cr³⁺ thin films prepared by the nonaqueous sol–gel method were evaluated. The obtained thin films were characterized by scanning electron microscope and energy dispersive spectrometry. They were irradiated with ⁶⁰Co gamma rays of the different doses. TL glow curves exhibited two peaks centered at 197°C and 322°C.The heights of peaks were found to be sensitive to exposures of ionizing irradiation and the integral area of the TL signals had a linear response in the dose range of 5–60 Gy.This remarkable result suggests that Al₂O₃:Cr³⁺ films might potentially be used for radiation dosimetry.     

Effect of Fe3+ doping on structural,optical and electrical properties δ-Bi2O3 thin films

Fe³⁺ doped δ-Bi₂O₃ thin films were prepared by sol–gel method on quartz glass substrate at room temperature and annealed at 800 °C. The thin films were then characterized for structural, surface morphological, optical and electrical properties by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption measurements and d.c. two-probe, respectively. The XRD analyses revealed the formation δ-Bi₂O₃ followed by a mixture of Bi₂₅FeO₄₀ and Bi₂Fe₄O₉. SEM images showed reduction in grain sizes after doping and the optical studies showed a direct band gap which reduced from 2.39 eV for pure δ-Bi₂O₃ to 1.9 eV for 10% Fe³⁺ doped δ-Bi₂O₃ thin film. The electrical conductivity measurement showed the films are semiconductors.     

KrF pulsed laser deposition of chromium oxide thin films from Cr8O21 targets

Chromium oxides, Cr_xO_y, are of great interest due to the wide variety of their technological applications. Among them, CrO₂ has been extensively investigated in recent years because it is an attractive compound for use in spintronic heterostructures. However, its synthesis at low temperatures has been a difficult task due to the metastable nature of this oxide. This is indeed essential to ensure interface quality and the ability to coat thermal-sensitive materials such as those envisaged in spintronic devices. Pulsed Laser Deposition (PLD) is a technique that has the potential to meet the requirements stated above. In this work, we describe our efforts to grow chromium oxide thin films by PLD from Cr₈O₂₁ targets, using a KrF excimer laser. The as-deposited films were investigated by X-ray diffraction and Rutherford backscattering spectrometry. Structural and chemical composition studies showed that the films consist of a mixture of amorphous chromium oxides exhibiting different stoichiometries depending on the processing parameters, where nanocrystals of mainly Cr₂O₃ are dispersed. The analyses do not exclude the possibility of co-deposition of Cr₂O₃ and a low fraction of CrO₂. PACS 81.15.Fg; 75.50.Dd     

ESCA studies of Cr-Co alloys

ESCA examination of films formed on Cr-Co alloys after immersion in 0.1M NaCl for 24 h has shown that the thickness of passive films decreased with an increase in chromium content. Surface films consisted of chromium and cobalt oxides as Cr₂O₃ and CoO. The amount of CoO in the surface film of the alloy was decreased with an increase in chromium but Cr₂O₃ was found at a greater depth in the passive film at any composition. Cr₂O₃ was a major component of the surface film when the chromium content in the alloy was 10% or higher. Electrochemical techniques according to ASTM G59 and ASTM G5 were used for the determination of the relative corrosion rate. Both Co-10 wt.% Cr and Co-30 wt.% Cr alloys investigated showed a lower corrosion rate than the Co-5 wt.% Cr alloy. Corrosion rate measured could be correlated to the surface film composition and structure as determined by ESCA.     

Determination of optical functions of very thin tantalum pentoxide films on platinum substrate by genetic algorithm approach

We study the optical characteristics of tantalum pentoxide films, deposited by reactive sputtering. These films, as many other metal oxide layers, are promising candidates for optical devices in the spectral region where they have no absorption. Besides applications in modern optics, they are also investigated as high-kappa materials for the needs of nano-electronics, i.e. design of dynamic random access memories, etc. Herein, we present results on optical functions of Ta₂O₅ films with physical thickness of ~15 nm. The spectral range of evaluation covers 210–750?nm. We have estimated the Ta₂O₅ optical functions from spectro-photometric data. The Tauc–Lorentz–Urbach parametric model was used in the fitting procedure, which was based on the stochastic genetic algorithm.