Effects of electric field and hydrostatic pressure on donor binding energies in a spherical quantum dot

The binding energies of a hydrogenic donor in a GaAs spherical quantum dot in the Ga_1−xAl_xAs matrix are presented assuming parabolic confinement. Effects of hydrostatic pressure and electric field are discussed on the results obtained using a variational method. Effects of the spatial variation of the dielectric screening and the effective mass mismatch are also investigated. Our results show that (i) the ionization energy decreases with dot size, with the screening function giving uniformly larger values for dots which are less than about 25 nm, (ii) the hydrostatic pressure increases the donor ionization energy such that the variation is larger for a smaller dot, and (iii) the ionization energy decreases in an electric field. All the calculations have been carried out with finite barriers and good agreement is obtained with the results available in the literature in limiting cases.     

Resonant magnetopolaron effects in parabolic quantum wells in a tilted magnetic field

We study the resonant magnetopolaron effects in parabolic quantum wells in a tilted magnetic field. The renormalization of the first excited level, which is resonant with the ground state level plus one longitudinal-optical phonon is calculated at the resonance using an improved resonance approximation to be E= where is the polaron coupling constant. The exponent and the factor are calculated in dependence on the tilt angle of the magnetic field and the confinement energy.     

Resonance effect of a magnetic quantum ring on the conductance of a two-dimensional sample

The resonant tunneling of electrons through a magnetic quantum ring in a two-dimensional sample and the effect of this resonant tunneling on the conductivity of the sample are studied in this work. The ballistic conductance of the sample is calculated for several values of the ratio (inner radius)/(outer radius) of the ring. The limit of a conductance plateau is recovered for approximately equal radii and previous results for the conductance of a magnetic quantum dot are recovered in the case of an approximately zero inner radius.     

Shell effects in quantum dots in tilted magnetic fields

The motion of a few electrons in a three-dimensional harmonic oscillator potential under the influence of a homogeneous magnetic field of arbitrary direction is studied. The ground state of the Fermi system is obtained by minimizing the total energy with regard to the confining frequencies. From this a dependence of the equilibrium shape on the electron number, the magnetic field parameters and the slab thickness is found.     

Binding energy of an off-center hydrogenic donor in a spherical Gaussian quantum dot

The energy levels of an off-center hydrogenic donor confined by a spherical Gaussian potential have been calculated as a function of the potential radius for different donor position by exact diagonalization method. The results have clearly demonstrated the so-called quantum size effect. The binding energy is dependent on the dot radius R, the impurity ion distance D, and the confining potential depth V₀.     

Donor binding energies and spin-orbit coupling in a spherical quantum dot

The ground state and a few excited state energies of a hydrogenic donor in a spherical quantum dot (GaAs in a GaAlAs matrix) are computed. While the 1s and the 2s-state energies behave normally for dots of all radii, the 2p₀ and 2p_± states are unbound for most of the radii of interest. It is predicted that a semiconductor quantum dot with a hydrogenic donor will exhibit photoconductivity for a low threshold wavelength ∼12 μm. The spin-orbit coupling gives a contribution of the order of 10⁻⁵ meV for both 2p₀ and 2p_± states.     

A double quantum well in a driving laser field

The dynamic effect of electrons in a double quantum well under the influence of a monochromatic driving laser field is investigated. Closed-form solutions for the quasienergy and Floquet states are obtained with the help ofSU (2) symmetry. For the case of weak interlevel coupling, explicit expressions of the quasienergy are presented by the use of perturbation theory, from which it is found that as long as the photon energy is not close to the tunnel splitting, the electron will be confined in an initially occupied eigenstate of the undriven system during the whole evolution process. Otherwise, it will transit between the lowest two levels in an oscillatory behavior.     

Structure and magnetic properties of Fe4/Cun (n=2,4) superlattices from first-principles study

The structures and magnetic properties of Fe4/Cun (n=2, 4) superlattices have been investigated by the first-principles pseudopotential plane-wave method based on spin density approximation. Compared with the ideal fcc-Cu bulk structure, for the optimized Fe4/Cu2 model, obvious contraction of interlayer distances occurs on the interior Fe layers, whereas the interlayer distances of Fe layers in Fe4/Cu4 are expanded. The anti-parallel alignment magnetic moment and negative polarization of the interior Fe layer have been found in the Fe4/Cu2 model. This can be explained in terms of the magnetic-volume effect, and the moment of anti-parallel alignment attributes to the contracted interlayer distances between the interior Fe layers. The MR ratio has also been evaluated by means of the two-current model. The MR ratio of the Fe4/Cu2 model (4.89%) is much small than that of the Fe4/Cu4 one (23.65%).     

Tight-binding calculations of the subband structures of zincblende-semiconductor [001] quantum wells

The scattering-theoretic T-matrix method is used to calculate the subband structures of GaAs−ZnSe and ZnSe−ZnS_xSe_1−x [001] quantum wells within an empirical tight-binding model, that includes the bulk Г₆, Г₇ and Г₈ valence- and conduction bands. The resulting confinement energies for vanishing lateral crystal momentumk _‖ are compared with those, that are obtained from a simple effective mass model and effects are found and predicted which the effective mass model cannot account for. The effect of the band nonparabolicity and the influence of the microscopic sequence of atomic layers, which determines the symmetry properties of a quantum well, are studied for the GaAs−ZnSe wells.     

Effects of Electric Field on Electronic States in a GaAs/GaAlAs Quantum Dot with Different Confinements

Binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, parabolic confinement and rectangular confinement are calculated as a function of dot radius in the influence of electric field. The binding energy is calculated following a variational procedure within the effective mass approximation along with the spatial depended dielectric function. A finite confining potential well with depth is determined by the discontinuity of the band gap in the quantum dot and the cladding. It is found that the contribution of spatially dependent screening effects are small for a donor impurity and it is concluded that the rectangulax confinement is better than the parabolic and spherical confinements. These results are compared with the existing literature.     

Formation and charge control of a quantum dot by etched trenches and multiple gates

We have fabricated a GaAs/InGaAs/AlGaAs-based single-electron transistor (SET) formed by etched trenches and multiple gates. Clear Coulomb-blockade oscillations have been observed when the gate biases are scanned. By self-consistently solving three-dimensional Schr?dinger and Poisson equations, we have studied the energy-band structure and the carrier distribution of our SET. General agreement between numerical simulation results and measurement data has been obtained, thus indicating the effectiveness of our SET-device design as well as the necessity of a complete three-dimensional quantum-mechanical simulation. Received: 18 October 2001 / Accepted: 6 January 2002 / Published online: 20 March 2002     

Two interacting electrons in a Gaussian confining potential quantum dot

Two interacting electrons in a Gaussian confining potential quantum dot are considered under the influence of a perpendicular homogeneous magnetic field. The energy levels of the low-lying states are calculated as a function of magnetic field. Calculations are made by using the method of few-body physics within the effective-mass approximation. A ground state behavior (singlet→triplet state transitions) as a function of the strength of a magnetic field has been found in the weak confinement case as a two-electron quantum dot with parabolic confining potential.     

Korringa relaxation time of magnetic ion system near a two-dimensional electron gas

Spin relaxation of Mn ions in a (Cd,Mn)Te quantum well with quasi-two-dimensional carriers (Q2DEG) is investigated. The mechanism of energy transfer is spin-flip scattering of Mn spin with electrons making transitions between spin subbands accompanied by a change in the Mn spin. A calculation of the spin-flip scattering rate shows that the Mn spin relaxation rate is proportional to the coupling constant squared, the density of states squared, and the electron temperature, the so called Korringa relaxation rate. It was found that for small Mn ion concentration, the relaxation time ≈10−7-10−6s is in a good agreement with experimental results. Moreover, the relaxation rate scales with L⁻², L being the well width, and it can be enhanced over its value in bulk.     

Electronic band structures of low-dimensional adsorbate systems: Rare-gas adsorption on transition metals

Angle-resolved photoemission data are dis-cussed for five different Xe adlayers which exhibit electronic structures of different dimensionalities. Xe adsorption on Ni (110)-(1 × 2)-3Hand the (×) R30^° Xe layer on Ru (001) reveal two-dimensional (2D) Xe-derived band structures that are characteristic for hexagonal rare-gas layers. Different Xe 5p dispersion widths on Ni and on Ru are found due to the difference in the Xe-Xe nearest-neighbor distance. For three rare-gas systems (two different Xe coverages on hydrogen-modified Pt (110)-(1 × 2)-H and Kr step decoration on a Pt (997) surface) true one-dimensional (1D) band structures are found. For Xe step adsorption on Pt (997), electronic localized (0D) behavior is observed due to an enlarged Xe-Xe separation. The qualitative differences of the band structures in the case of 2D, 1D and 0D rare-gas systems are demonstrated and are explained by the different dimensionalities of the various structures. Received: 3 August 2000 / Accepted: 4 August 2000 / Published online: 7 March 2001     

External Electric Field Effect on Hydrogenic Donor Impurity in Zinc-Blende InGaN Quantum Dot

The binding energy of a hydrogenic donor impurity in zinc-blende (ZB) InGaN quantum dot (QD) is calculated in the framework of effective-mass envelope-function theory using the plane wave basis. It is shown that the donor binding energy is highly dependent on the impurity position, QD size and the external electric field. The symmetry of the electron probability distribution is broken and the maximum of the donor binding energy is shifted from the centre of QD in the presence of the external electric field. The degenerating energy levels for symmetrical positions with respect to the centre of QD are split. The splitting increases with the increase of QD height while the splitting increases up to a maximum value and then decreases with the increase of QD radius.     

Nonlinear optical properties of a hydrogenic donor quantum dot

A investigation of the nonlinear optical properties of a hydrogenic donor in a disc-like parabolic quantum dot has been performed by using the matrix diagonalization method. The optical absorption coefficient between the ground (L=0) and the first excited state (L=1) have been examined based on the computed energies and wave functions. The results are presented as a function of the incident photon energy for the different values of the incident optical intensity and the confinement strength. We found the total optical absorption coefficient is strongly affected by the incident optical intensity and the confinement strength.     

Electronic structure at carbon nanotube tips

Received: 27 November 1998 / Accepted: 5 January 1999     

Quantum corrections to the conductance of a square quantum dot with soft confinement

We study the conductance of a square quantum dot, modeling the potential with a self-consistent Thomas-Fermi approximation. The resulting potential is characterized by level statistics indicative of mixed chaotic and regular electron dynamics within the dot in spite of the regular geometry of the gates defining the dot. We calculate numerically, for the case of a quantum dot with soft confinement, the weak localization (WL) correction. We demonstrate that this confining potential may generate either Lorentzian or linear lineshapes depending on the number of modes in the leads. Finally, we present experimental WL data for a lithographically square dot and compare the results with numerical calculations. We analyze the experimental results and numerical simulations in terms of semiclassical and random matrix theory (RMT) predictions and discuss their limitations as far as real experimental structures are concerned. Our results indicate that direct application of the above predictions to distinguish between chaotic and regular dynamics in a particular cavity can not always lead to reliable conclusions as the shape and magnitude of the WL correction can be strongly sensitive to the geometry-specific, non-universal features of the system. Received 13 May 1998