Facile,high yield ultrasound mediated protocol for ZnO hierarchical structures synthesis: Formation mechanism,optical and photocatalytic properties

Hierarchical flowers-like zinc oxide structures have been successfully obtained by a simple and fast ultrasound-assisted method performed in a ordinary ultrasonic bath using an ammonia solution and zinc acetate, in the absence of any surfactant or template. The composition, structure, crystallinity, morphology and optical properties of the materials obtained at different ultrasound irradiation times were characterized by infrared, UV–Vis and photoluminescence spectroscopy, X-ray diffraction, scanning and transmission electron microscopy investigations. It was proved that the ultrasound irradiation time manipulates both the defect content (implicit the photoluminescent properties) and morphology of the ZnO materials: shorter irradiation times leads to the synthesis of high-defected ZnO structures of flower morphology with triangular-shaped petals, while higher irradiation times favours the formation of low-defected ZnO structures with tipped rod-like petals. A plausible growth mechanism of the architectures that implies aggregation via oriented attachment followed by an Ostwald ripening is advanced based on these results. The ZnO flower-like structures present high photocatalytic activities, a total phenol mineralization being registered in the case of visible light experiments. Electron-spin resonance measurements demonstrate the generation of reactive oxygen species, namely hydroxyl radicals but also C centred radicals adducts derived most probable from the residual acetate adsorbed on ZnO surface.     

Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours’ current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensi- ties under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode.     

Self-organized nanogratings in glass irradiated by ultrashort light pulses

Periodic nanostructures are observed inside silica glass after irradiation by a focused beam of a femtosecond Ti:sapphire laser. Backscattering electron images of the irradiated spot reveal a periodic structure of stripelike regions of approximately 20 nm width with a low oxygen concentration, which are aligned perpendicular to the laser polarization direction. These are the smallest embedded structures ever created by light. The period of self-organized grating structures can be controlled from approximately 140 to 320 nm by the pulse energy and the number of irradiated pulses. The phenomenon is interpreted in terms of interference between the incident light field and the electric field of the bulk electron plasma wave, resulting in the periodic modulation of electron plasma concentration and the structural changes in glass.     

Tuneable photoluminescence,raman spectroscopy and electrical properties of GaAs doping superlattices

Optical properties of three GaAs doping superlattices (SLs) were studied by low and high temperature photoluminescence (PL) as well as inelastic light scattering. A new optically active transition has been observed at 1.48 eV and the high temperature behaviour of the main e–(Zn)h band has been studied. Electrical properties were monitored by current-voltage, resistivity and Hall measurements. This showed a strong variation of carrier concentration in the p-layers associated with mixed electron–hole conduction. The influence of α-particle irradiation on the superlattice structures was also investigated.     

Structural, photonic band-gap, and luminescence properties of the opal-erbium composite

Erbium oxide and silicates were embedded in the pores of synthetic opal by using the chemical bath deposition technique. Electron-microscopic images showed the synthesized compounds to be deposited predominantly in a thin uniform layer on the inner surface of the pores. An analysis of the transmittance spectra suggested that the opal-erbium composite thus obtained retained the photonic band-gap properties of the original ordered opal matrix. The Er³⁺ ions in the composite emitted light at several wavelengths in the visible and near-IR regions (550, 860, 980, 1240, 1530 nm) at 80 K.     

Effect of electron beam on structural,linear and nonlinear properties of nanostructured Fluorine doped ZnO thin films

Electron beam induced effects on Fluorine doped ZnO thin films (FZO) grown by chemical spray pyrolysis deposition technique were studied. The samples were exposed to 8 MeV electron beam at different dose rate ranging from 1 kGy to 4 kGy. All films exhibit a polycrystalline nature which shows an increase in crystallanity with irradiation dosages. The electron beam irradiation effectively controls the films surface morphology and its linear optical characteristics. Z-Scan technique was employed to evaluate the sign and magnitude of nonlinear refractive index and nonlinear absorption coefficient using a continuous wave laser at 632.8 nm as light source. Enhancement in the third order nonlinear optical properties was were noted due to electron beam irradiation. Tailoring the physical and NLO properties by electron beam, the FZO thin films becomes a promising candidate for various optoelectronic applications such as phase change memory devices, optical pulse compression, optical switching and laser pulse narrowing.     

第一性原理计算N掺杂对InNbO_4电子结构的影响

宽带隙(3.83 e V)半导体光催化材料InNbO_4在紫外光作用下具有分解水和降解有机物的性能.最近实验发现了N掺杂InNbO_4具有可见光下分解水制氢的活性.为了从理论上解释这一实验现象,本文采用基于密度泛函理论的第一性原理计算了N掺杂对InNbO_4的能带结构、态密度和光学性质的影响.分析能带结构可得,N掺杂后在InNbO_4的价带(O 2p)上方形成N 2p局域能级,导致电子跃迁所需的能量减小.吸收光谱表明,N掺杂后InNbO_4的光吸收边出现了红移,实现了可见光吸收.     

第一性原理计算N掺杂对InNbO4电子结构的影响

宽带隙（3.83 eV）半导体光催化材料InNbO4在紫外光作用下具有分解水和降解有机物的性能。最近实验发现了N掺杂InNbO4具有可见光下分解水制氢的活性。为了从理论上解释这一实验现象，本文采用基于密度泛函理论的第一性原理计算了N掺杂对InNbO4的能带结构、态密度和光学性质的影响。分析能带结构可得，N掺杂后在InNbO4的价带（O 2p）上方形成N 2p局域能级，导致电子跃迁所需的能量减小。吸收光谱表明，N掺杂后InNbO4的光吸收边出现了红移，实现了可见光吸收。     

Proton and electron irradiation induced changes in the optical properties of ZnO pigments modified with ZrO2 and Al2O3 nanopowders

The effect of the modification of ZnO powders by ZrO₂ and Al₂O₃ nanoparticles with a concentration of 1–30 wt % is investigated by diffuse reflectance spectra within the wavelength range 0.2 to 2.5 μm before and after 100 keV proton and electron irradiation. It has been established that the introduction of nanoparticles enhances the optical stability of the pigments under proton irradiation, but reduces it under electron irradiation. Samples modified by 5 wt % of ZrO₂ nanoparticles have the highest stability of optical properties after proton exposure. The degradation of optical properties under electron irradiation is not high for this concentration of nanoparticles. A decrease in the absorption of pigments modified with nanoparticles after proton exposure is determined by a decrease in the intensity of bands located in the UV and visible regions. After electron exposure the absorption bands have a high intensity in the whole spectrum range.     

On the origin of laser coherence

It is shown that the light created in the process of the “emission of many photons by many atoms”, as treated recently by Ernst and Stehle, has extreme coherence properties. In particular, it leads to spatial interference effects between radiation from two distinct sources of this type. Under certain conditions this interference even can become optimal in the sense that the intensity minima vanish. Furthermore, in the sense of the definition of Glauber, the light field produced in this process is practically coherent to the ordern～N, whereN is the the number of emitted photons. One arrives at a natural and simple interpretation of two-laser interference experiments of Magyar and Mandel, and Pfleegor and Mandel, if one assumes that the mentioned process constitutes the primary creation mechanism of laser light. It is shown that and how the physically important features of laser activity can be understood on the base of this assumption.     

Contrast within images of locally charged dielectrics in scanning electron microscopy

Investigations of dielectric materials via a scanning electron microscope are accompanied by definite difficulties associated with their charging under the action of electron irradiation. Certain aspects intrinsic to the formation of the contrast within images of locally charged regions of dielectric targets are discussed. Tertiary electrons, which are generated on the surface of the microscope??s lens by the accelerated field of charges of true secondary electrons emitted from an irradiated sample, is shown to play a significant role. The contrast of locally charged dielectric images is demonstrated to invert at small electronbeam energies corresponding to an emission coefficient of greater than unity. The origin of this effect is also explained.     

Band structure and photocatalytic properties of perovskite-type compound Ca2NiWO6 for water splitting

An oxide semiconductor Ca₂NiWO₆, with double-perovskite crystal structure, was synthesized by solid-state reaction method. The compound Ca₂NiWO₆ was characterized by X-ray diffraction, UV-visible diffuse reflectance, and photoluminescence. The photocatalytic properties of the compound for water splitting were investigated under UV and visible light irradiation. The results showed H₂ evolution was not observed over the compound under visible light irradiation (λ>420 nm) with a 300 W xenon arc lamp when using methanol (CH₃OH) as electron donor, although the compound was responsive to visible light region. Based on the experimental results, a possible band structure was proposed through theoretical calculation of the electronic structure by using the full potential-linearized augmented plane wave (F-LAPW). The band structure and photocatalytic properties were attributed to the special crystal and electronic structures. Due to the oxygen vacancies in the compound, which worked as electron-hole recombination centers, the photocatalytic activity of the compound was low.     

Effects of Beta Irradiation,Copolymers, and Blends on the Transformation Rate of Polybutene-1

The beta irradiation of polybutene-1 (PB-1) and its random copolymers with ethylene results in sample degradation without chain cross-linking. The crystal structures of both homopolymer and ethylene copolymers were phase I (I), except that for samples of short time irradiation, after melting, where phase II (II) was also present. The sample crystallinity decreased from 64% to a low of 45% in the irradiated samples for the condition used. The crystal size/perfection of the transformed I was slightly lower than that of parent II. The beta irradiation increased the transformation rate of II → I but to a lower extent than did the amount of ethylene in the copolymers. IR analysis confirmed that electron irradiation resulted in chain scission and a decrease of ?CH₂? and ?CH₃ groups. The mechanical properties decreased with increasing ethylene content and irradiation dose.     

Influence of electron-beam irradiation in SEM on the cathodoluminescence and electron-beam-induced current in InGaN/GaN light-emitting diodes with a buried active region

The influence of irradiation in a scanning electron microscope on the optical properties inherent to light-emitting diodes (LEDs) with multiple InGaN/GaN quantum wells, assembled by means of the flip-chip mounting technique, has been investigated via the cathodoluminescence (CL) and electron-beam-induced current methods. It is demonstrated that the action of an electron beam qualitatively varies both these LEDs and structures with a thin upper GaN layer only at large beam energies. It has been revealed that irradiation not only leads to changes in the spectrum and intensity of CL but also decreases the energy corresponding to the excitation of emission associated with quantum wells. A similar effect is also observed in structures whose external quantum efficiency has been decreased several times due to long-running tests performed at an injection current density of 35 A/cm² and a temperature of 100°C.     

Temperature dependence of the cathodoluminescence spectra of irradiated light-emitting-diode structures with multiple InGaN/GaN quantum wells

The cathodoluminescence spectra of regions of light-emitting structures with multiple InGaN/GaN quantum wells unirradiated and irradiated with an electron beam are investigated in the temperature range from liquid-nitrogen temperature to room temperature. It is shown that a new emission line with an energy of 2.69 eV emerges as a result of irradiation in addition to the initial 2.6 eV line. The intensity of the emission line associated with Mg in p-GaN also increases after irradiation.     

光辐照精确调控金纳米星枝杈长度及其光热性能探究

金纳米星是一种具有尖状结构的多分枝纳米颗粒.为了使金纳米星枝杈长度可控,利用HEPES作为体系的还原剂、稳定剂及形状诱导剂,在制备过程中进行光辐照,得到的金纳米星枝杈长度比无光辐照时的金纳米星枝杈长度短,而且不同波长光辐照得到的金纳米星枝杈长度有显著不同.在此基础上,分析了金纳米星枝杈长度变化的物理过程,提出光诱导金纳米星生长过程中枝杈长度变化的理论模型.测量了不同枝杈长度的金纳米星在光辐照下一定时间内的温度变化,计算了金纳米星的光热转换效率.实验结果表明,光辐照制备金纳米星能够精确控制金纳米星枝杈长度范围,从而调控金纳米星的光热转换效率.     

α-Al2O3: Mn单晶的三维热释发光谱研究

测量了α-Al2O3: Mn单晶中子辐照前后的三维热释发光谱.观察到α-Al2O3: Mn:Mn单晶γ射线照射后测量的三维热释发光谱中，峰温在350℃波长为680nm处有一宽发光峰，这可能与Mn2+离子有关；波长为695nm峰温在170℃和350℃的线状光谱，叠加在680nm宽发光峰上，是Cr3+离子的发光谱线,其中可能有Mn4+离子的贡献.与纯α-Al2O3单晶的热释发光谱相比，掺入Mn杂质后，γ射线照射的三维热释发光谱中完全地抑制了波长为416nm的α-Al2O3的F心发光峰.经1017cm-2中子注量辐照和退火后，γ射线照射后测量的三维热释发光谱中，在150℃出现了波长为416和695nm的发光峰，以及在250℃波长为680和695nm的发光峰，其中695nm新发光峰的强度略超过了中子辐照前α-Al2O3:Mn在350℃波长为695nm的发光峰，说明中子辐照产生了大量浅陷阱能级和F心.然而，经1018cm-2中子注量辐照和退火后，γ射线照射后测量的三维热释发光谱中，出现了峰温150℃，190℃和250℃波长为520nm的Mn2+离子发光峰，以及300℃波长为680和695nm的Cr3+（或Mn4+）的发光峰，表明增高中子注量的辐照，产生了温度为190℃，250℃和300℃深陷阱能级和F心，并使Mn2+离子发光峰明显加强. 关键词： α-Al2O3:Mn 三维发光谱 缺陷结构 发光机理     

Ablation process of silica glass induced by laser plasma soft X-ray irradiation

Silica glass can be machined by irradiation with laser plasma soft X-rays on nano- and micrometer scale. We have investigated the ablation process of silica glass induced by laser plasma soft X-ray irradiation. We observed ionic and neutral species emitted from silica surfaces after irradiation. Dominant ions and neutrals are O⁺ and Si⁺ ions and Si, O, SiO and Si₂ neutrals, respectively. The ions have kinetic energies of 13 and 25 eV, which are much higher than those of particles emitted by evaporation. The energy of laser plasma soft X-rays absorbed to silica glass at a fluence of 1.4 J/cm² is estimated to be 380 kJ/cm³, which is higher than the binding energy of SiO₂ of 76 kJ/cm³. These results suggest that the most of the bonds in silica glass are broken by absorption of laser plasma soft X-rays, that several percent of the atoms are ionized, and that neutral atoms are emitted together with repulsive ions. The process possibly enables us to fabricate nano structures.     

Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors

To understand the effects of ⁶⁰Co gamma-irradiation, systematic studies were carried out on n-channel AlGaN/GaN high electron mobility transistors. Electrical testing, combined with electron beam-induced current measurements, was able to provide critical information on defects induced in the material as a result of gamma-irradiation. It was shown that at low gamma-irradiation doses, the minority carrier diffusion length in AlGaN/GaN exhibits an increase up to ～300?Gy. The observed effect is due to longer minority carrier (hole) life time in the material's valence band as a result of an internal electron irradiation by Compton electrons. However, for larger doses of gamma irradiation (above 400?Gy), deteriorations in transport properties and device characteristics were observed. This is consistent with the higher density of deep traps in the material's forbidden gap induced by a larger dose of gamma-irradiation. Moderate annealing of device structures at 200°C for 25?min resulted in partial recovery of transport properties and device performance.     

Fabrication of specified-geometry metal pattern by proton irradiation through a single-layer mask

Results on the determination of protective properties of a ZEP520 electron resist film and geometrical characteristics of Mo metal test structures fabricated by local reduction of MoO₃ in protective mask windows under irradiation by the beams of protons are presented. The advantage of the method for fabricating metal structures based on local selective removal of oxygen atoms from oxides are discussed.