Highly improved electroluminescence from double-layer devices based on a carbazole-functionalized europium<Superscript>3+</Superscript> complex

A novel europium complex Eu(TTA)₃(CPPO)₂ (1) (TTA=thenoyltrifluoroacetone, CPPO=9-[4-(diphenyl-phosphinoyl)-phenyl]-9H-carbazole) based on the phosphine oxide ligand with bipolar structure was used to fabricate double-layer devices. The strong hole injection and transport ability of 1 was proved. The luminance of 414 cd m⁻² was achieved with the device configuration ITO/Eu(TTA)₃(CPPO)₂(40 nm)/BCP (30 nm)/Mg:Ag (BCP = 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline), which is favorable among double-layer organic light emitting devices based on small molecular Eu³⁺ complexes. The maximum current efficiency of 2.44 cd A⁻¹ and external quantum efficiency of 1.55% demonstrate the potential application of 1 as a promising candidate for high-efficiency, simple-structure and pure red-emitting devices.     

Polarized spectral properties of Pr3+ ions in NaGd(MO4)2 crystal

A Pr³⁺:NaGd(MoO₄)₂ single crystal has been grown by the Czochralski method. The polarized absorption spectra, polarized fluorescence spectra, and fluorescence decay curves of the crystal were measured at room temperature. The Judd–Ofelt intensity parameters Ω _t,q (t=2,4,6) and the spectroscopic parameters related to the ³ P ₀ and ¹ D ₂ multiplets were obtained and analyzed. The decay mechanisms for the ³ P ₀ and ¹ D ₂ multiplets were also discussed.     

Quantitative analysis of charge-carrier trapping in organic thin-film transistors from transfer characteristics

A dynamic method for quantifying the amount and mechanism of trapping in organic field effect transistors (OFETs) is proposed. It exploits transfer characteristics acquired upon application of a triangular waveform gate sweep V _G. The analysis of the transfer characteristics at the turning point V _G=−V _max between forward and backward gate sweeps, viz. around the maximum gate voltage V _max applied, provides a differential slope Δm which depends exclusively on trapping. Upon a systematic change of V _max it is possible to extract the initial threshold voltage, equivalent to one of the observables of conventional stress measurements, and assess the mechanism of trapping via the functional dependence on the current. The analysis of the differential logarithmic derivative at the turning point yields the parameters of trapping, as the exponent β and the time scale of trapping τ. In the case of an ultra-thin pentacene OFET we extract β=1 and τ=10²–10³ s, in agreement with an exponential distribution of traps. The analysis of the hysteresis parameter Δm is completely general and explores time scales much shorter than those involved in bias stress measurements, thus avoiding irreversible damage to the device.     

Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory

Memory devices based on the reversible resistance switching of various materials are attractive for today’s semiconductor technology. The reproducible current hysteresis (resistance switching) characteristics of reduced TiO₂ single crystal are demonstrated. Basic models concerning the filamentary and Schottky barrier models are discussed. Good retention characteristics are exhibited by the accurate controlling of the annealing parameters.     

Absorption and emission properties of Bi-doped Mg–Al–Si oxide glass system

A new Bi-doped Mg–Al–silicate glass is suggested and investigated. It can be fabricated by moderate-temperature routine technology. The characteristic relaxation time of 300–800 μs in combination with the high quantum yield (up to 85%) and wide excitation spectrum makes this glass a promising laser material. The obtained quadratic dependence of the visible absorption intensity is an argument in favor of the hypothesis that the absorption and infrared luminescence in Bi-doped glasses are caused by Bi₂ dimers.     

Improvement of electrical properties of silicon-based thin-film transistors by modifying technological fabrication processes

This paper is a review of technological process evolution associated to electrical performance improvement of silicon-based thin-film transistors (TFTs) that were performed mainly in the GM/IETR laboratory. The main objective in agreement with the fields of applications is to fabricate TFTs at a temperature low enough to be compatible with the substrates, glass substrates in a first place and flexible substrates in a second one, which implies several approaches. In fact, the electrical properties of the TFTs, mainly field-effect mobility of carriers in the channel, I _on/I _off drain current ratio, and subthreshold slope, are strongly dependent on the quality and the nature of the channel material, on the material quality and thus on the density of states at the interface with the gate insulator, and on the quality of the gate insulator itself. All the improvements are directly linked to all these aspects, which means an actual combination of the efforts. For the glass substrate, compatible technology processes such as deposition techniques, or solid phase, or laser crystallizations of active layers were studied and compared. The paper details all these approaches and electrical performances. In addition, some results about the use of a silicon–germanium compound as channel active layer and airgap transistors for which the insulator is released, complete the presentation of the evolution of the silicon-based TFTs during the last twenty years.     

A simplified post-soft-breakdown current model for MOS devices

Based on the tunneling current model, a simplified current model is developed for MOS devices after soft breakdown (SBD). The post-soft-breakdown current consists of modified direct tunneling current and Fowler Nordheim (FN) tunneling current. Considering the change of gate oxide after soft breakdown, impacts of soft breakdown on the dielectric constant, and effective electron mass of the gate oxide are discussed, and their values are obtained by fitting simulation results to experimental data. It is found that the effective electron mass is decreased after soft breakdown due to damaged oxide, while the dielectric constant is increased after soft breakdown due to interface distortion. In this way, the leakage current after soft breakdown can be accurately calculated. The validity of the proposed model is confirmed by experimental results. Z.L. Li currently is with the Department of Electrical and Electronic Engineering, University of Hong Kong.     

Laser forward transfer of silver electrodes for organic thin-film transistors

Organic thin-film transistors (OTFTs) with top- and bottom-contact configurations were fabricated using silver nano-inks printed by laser forward transfer for the gate and source/drain electrodes with pentacene and poly-4-vinylphenol as the organic semiconductor and dielectric layers, respectively. The volume of the laser-printed Ag pixels was typically in the subpicoliter (0.2–0.4 pl) range. The top-contact OTFTs resulted in lower contact resistance compared to those obtained from the bottom-contact OTFTs, and showed improved overall device performance. The top-contact OTFTs exhibited field-effect mobilities of ∼0.16 cm² V⁻¹ s⁻¹ and on/off current ratios of ∼10⁵.     

Broad excitation of Er luminescence in Er-doped HfO2 films

We investigated the broad and sensitized luminescence properties of Er-doped HfO₂ films synthesized by pulsed laser deposition (PLD) and ion implantation techniques. In the investigation we focused on the mechanism of energy transfer in the host matrix. Based on the comparison of photoluminescence (PL), photoluminescence excitation (PLE), and cathode-luminescence (CL), as well as on microstructure measurements, an excitation transfer process resulting in the broad excitation for Er, luminescence at 1540 nm, is identified. In this process, the oxygen vacancies and Hf in the host HfO₂ serve mainly as effective sensitizers for neighboring Er ions in the nonresonant excitation process. Furthermore, the direct Er³⁺ intra-4f transitions and full spectral emission of Er ions in the HfO₂ matrix are clearly observed under the wide-spectrum excitation in the CL measurement. This reveals more detailed features for the energy transfer and transition processes.     

Subthreshold regime in rubrene single-crystal organic transistors

Organic field-effect transistors were fabricated with vapor-grown rubrene single crystals in a staggered top-contact configuration. The devices were electrically characterized by measuring the transfer curves at low drain voltage. In parallel to these measurements, a model is developed to account for the subthreshold regime of the transistors. The model is based on the multiple trapping and thermal release concept, which assumes that charge transport is limited by a single level of shallow traps located close to the transport band edge. It is shown that the threshold voltage no longer establishes at the transition between the depletion and accumulation regimes. Instead, the threshold corresponds to the point at which traps are filled. This results in a subthreshold current that varies linearly with gate voltage. Moreover, the subthreshold current at low drain voltages increases with drain voltage. These finding are in good agreement with the experimental data.     

Spatially resolved photoresponse measurements on pentacene thin-film transistors

A confocal setup with a spatial resolution in the submicron regime is employed for investigating the response of pentacene transistors to local illumination. The transistors show enhanced and inhomogeneous photoresponse in the proximity of the hole-injecting contact. These inhomogeneities represent contact areas of varying injection efficiency. Thus, this technique allows imaging of contact efficiencies with submicron resolution over large areas up to hundreds of microns. Drift–diffusion simulations including a photogeneration/recombination process have been performed to model the photoresponse. The simulations illustrate that the potential drop along the channel is dramatically reduced in the illuminated area due to photoconductance (i.e. photoinjection of excitons and subsequent dissociation). Also, the injection barrier for holes is reduced if the illumination is close to the hole-injecting electrode. The rapid decay of the photoresponse with increasing distance to the positively biased electrode is caused by the limited electron mean free path in our devices.     

A continuously tunable low-threshold organic semiconductor distributed feedback laser fabricated by rotating shadow mask evaporation

We have theorized that a photonic band gap can be induced in a submicron periodically poled LiNbO₃ (SPPLN) with a uniform electrical field applied along the Y axis of the structure. The width of the band gap can be modulated by the intensity of the Y-directional electrical field. Moreover, for such a periodical structure with a duty cycle other than 0.5, the central location of the gap can be tuned by applying an additional electrical field along the Z axis of the sample.     

Grain boundaries in Cu(In,?Ga)(Se,?S)2 thin-film solar cells

The paper reviews the current status of the research on grain boundaries in polycrystalline Cu(In, Ga)(S, Se)₂ alloys used as absorber materials for thin-film solar cells. We discuss the different concepts that are available to explain the relatively low electronic activity of grain boundaries in these materials. Numerical simulations that have been undergone so far to model the polycrystalline solar cells are briefly summarized. In addition, we give an overview on the experiments that have been conducted so far to elucidate the structural, defect-chemical, and electronic properties of grain boundaries in Cu(In, Ga)(S, Se)₂ thin-films.     

Low voltage operating OFETs based on solution-processed metal phthalocyanines

The class of sodium salts of sulphonated metal phthalocyanines (MePCS _x , S = SO₃Na, x=1–4) was investigated as a p-type channel component in organic field-effect transistors (OFETs). The solubility of these materials appears to be enhanced compared to their non-sulphonated counterparts (MePCs). We fabricated transistors based on MePCS _x varying the central metal atom (Me = Ni, Co, Zn, Al) and we evaluated the dependence of transistor performance on the nature of the central atom and the degree of sulphonation. The best results were obtained in the case of Ni and low sulphur content. In this case the mobility value is μ=1.08 cm² V⁻¹ s⁻¹ and the on/off current ratio ∼10³. The degree of sulphonation affects the electric field inside the active film in a way analogous to the case of polyelectrolyte-gated OFETs. The Na⁺ counter ions present in the channel contribute to the device characteristics but their concentration should be controlled in order to optimize device performance.     

Organic film thickness influence on the bias stress instability in?sexithiophene field effect transistors

In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 to 130 nm on Si/SiO₂ substrates. After the T6 film structural analysis by X-ray diffraction and the FET electrical investigation focused on carrier mobility evaluation, bias stress instability parameters have been estimated and discussed in the context of existing models. By increasing the film thickness, a clear correlation between the stress parameters and the structural properties of the organic layer has been highlighted. Conversely, the mobility values as a result are found to be almost thickness independent.     

Lifetime of optical phonons in fs-laser excited bismuth

This paper presents experimental and theoretical results on the temperature-dependent optical response of a single crystal of bismuth to excitation by femtosecond laser pulses. We demonstrate that the measured damping rate of the transient reflectivity oscillations relates to the lifetime of optical phonons. The lifetime is the inverse rate of the decay of optical phonons into two acoustic phonons. This lifetime also indicates the approach to the vibration instability (catastrophe) threshold that manifests the beginning of the disordering of a solid crystal and transition to a liquid state. We observe the red shift of phonon frequency, which increases with the rise of the initial lattice temperature. The red shift is different from the previously observed red shift proportional to the electron temperature, and thus to the excitation laser fluence. The coherent phonon excitation process imprinted into the initial change in the reflectivity and the following reflectivity oscillations allowed us to uncover the temporal phonon history preceding the structural transformation of solid Bi.     

The electrical and dielectrical behavior of n-conducting perylene tetracarboxylic diimide derivatives

A comparison of the electrical characteristics of organic field-effect transistors (OFETs) based on derivatives of the electron-conductor perylene tetracarboxylic diimide (PTCDI) in top-contact configuration is presented. The derivatives used are N,N′-dimethyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiMe-PTCDI), N,N′-diphenyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiPhenyl-PTCDI), N,N′-dimethoxyethyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiMethoxyethyl-PTCDI), N,N′-di(3-pentyl)-3,4,9,10-perylene-tetracarboxylic-diimide (Di3Pentyl-PTCDI), and N,N′-diheptyl-3,4,9,10-perylene-tetracarboxylic-diimide (DiHeptyl-PTCDI). Current/voltage measurements were first performed in situ and later ex situ. Additionally, the effect of annealing and bias stress was probed in situ. A strong influence of the different side groups on the order of magnitude of the electron mobility is revealed, ranging from 4×10⁻⁶ cm²/V s for DiMethoxyethyl-PTCDI to 5×10⁻² cm²/V s for DiHeptyl-PTCDI. While none of the devices was stable in air after exposition to air, only the DiMe-PTCDI one resumed its functionality after restoring vacuum conditions. The dielectric functions of the derivatives was derived, additionally revealing optical isotropy for all films and varying surface roughness. While DiHeptyl-PTCDI and Di3Pentyl-PTCDI, yielding also the highest electron mobilities, form smooth layers with negligible surface roughness, strong island formation was be observed for DiPhenyl-PTCDI and DiMethoxyethyl-PTCDI, yielding low mobilities. This island growth was also confirmed by atomic force microscopy measurements. Ageing of the samples for several months under ambient conditions leads to increased roughness for the very rough samples. Layers with smooth surface, on the other hand, showed no significant change in the dielectric behavior of the sample.     

Excitonic diffusion in thin molecular films

The analyses of exciton diffusion in thin molecular films have shown that the diagonal elements of the diffusion tensor, usually called diffusion coefficients, depend on the layer index labeling layers in the direction of disturbed symmetry. The particular analysis was done for a thin film having four layers. In this structure only two layers are occupied by optical excitations. It means that in the four layer film two films occur in which optical excitations can travel. The subfilm contains a boundary layer that noticeably differs from the subfilm with internal layers. If the subfilm contains the boundary layer, the diffusion coefficient of this layer differs from the diffusion coefficient of any internal layer. If the subfilm contains two internal layers, the diffusion coefficient of these layers are equal, expectably from the viewpoint of physics. The exciton diffusion is very low due to the high exciton energies. This work was supported by the Serbian Ministry of Science and Technology: Grant No 1895.     

Effect of process parameters and post-deposition annealing on the microwave dielectric and optical properties of pulsed laser deposited Bi<Subscript>1.5</Subscript>Zn<Subscript>1.0</Subscript>Nb<Subscript>1.5</Subscript>O<Subscript>7</Subscript> thin films

Bismuth Zinc niobate (Bi_1.5Zn_1.0Nb_1.5O₇) thin films were deposited by pulsed laser deposition (PLD) method on fused silica substrates at different oxygen pressures. The structural, microwave dielectric and optical properties of these thin films were systematically studied for both the as-deposited and the annealed films at 600°C. The as-deposited films were all amorphous in nature but crystallized on annealing at 600°C in air. The surface morphology as studied by atomic force microscopy (AFM) reveals ultra-fine grains in the case of as-deposited thin films and cluster grain morphology on annealing. The as-deposited films exhibit refractive index in the range of 2.36–2.53 (at a wavelength of 750 nm) with an optical absorption edge value of 3.30–3.52 eV and a maximum dielectric constant of 11 at 12.15 GHz. On annealing the films at 600°C they crystallize to the cubic pyrochlore structure accompanied by an increase in band gap, refractive index and microwave dielectric constant.     

Optical properties of polysiloxane hybrid thin films containing nano-sized Ag–As–Se chalcogenide clusters

Chalcogenide glasses are attractive for all-optical signal processing due to their outstanding optical properties, including large optical nonlinearity, a high refractive index and high photosensitivity. In device fabrication, a challenge lies in the difficulty of obtaining thin films with a high stability and good uniformity. In this paper, optical thin films containing nano-sized chalcogenide clusters in polysiloxane matrices are fabricated by a modified plasma deposition process. The optical absorption and luminescence emission properties of the hybrid thin films were characterized by UV-Vis-NIR and fluorescence spectroscopy. Luminescent emission from Ag–As–Se nano-sized clusters was observed for the first time in these nano-hybrid thin films, and the mechanism was discussed.