用于红外激光防护的高开关率VO2薄膜

采用反应离子束溅射和后退火处理技术在石英玻璃基底上制备了具有纳米粒子的二氧化钒(VO₂)薄膜. 该薄膜具有半导体-金属相变特性,在3 μm处的开关率达到76.6%。 热致相变实验结果给出了准确的最佳退火温度为465 ℃. 仿真、热致相变和光致相变实验都显示VO₂薄膜在红外波段具有很高的光学开关特性. 光电池防护实验结果显示VO₂薄膜将硅光电池的抗干扰能力提升了2.6倍, 证明了VO₂在激光防护中的适用性. 采用连续可调节系统研究得到VO₂在室温条件下的相变阈值功率密度为4.35 W/cm², 损伤阈值功率密度为404 W/cm²。 低相变阈值和高损伤阈值都进一步证明VO₂薄膜适用于激光防护系统。本实验制备的VO₂薄膜在光开关、光电存储器、智能窗等方面也具有广泛的应用价值.     

带宽可调谐的太赫兹超构材料半波片器件

基于二氧化钒(vanadium dioxide, VO₂)的相变原理,提出了一种“树叶型”复合超构材料,能够实现带宽可调谐的半波片功能。VO₂薄膜为绝缘态时,复合超构材料可以看作是空芯“树叶型”金属结构,能够实现双频带的半波片功能。在1.01～1.17 THz和1.47～1.95 THz频带范围内能够将y偏振光转换成x偏振光,偏振转换率大于0.9且平均相对带宽为26%。VO₂薄膜为金属态时,实芯“树叶型”金属结构的超构材料在1.13～2.80 THz范围内能够实现反射型的宽频带半波片功能,相对带宽为85%。利用瞬时表面电流分布和电场理论详细地分析了带宽可调谐半波片器件的工作原理。本文所提出的“树叶型”复合超构材料半波片器件在太赫兹成像、传感和偏振探测等领域具有潜在的应用前景。     

金属Pt薄膜上二氧化钒的制备及其电致相变性能研究

通过引入SiO₂氧化物缓冲层, 在金属Pt电极上利用射频磁控溅射技术成功制备出高质量的VO₂薄膜. 详细研究了SiO₂厚度对VO₂薄膜的晶体结构、微观形貌和绝缘体–金属相变(MIT)性能的影响. 结果表明厚度0.2 μm以上的SiO₂缓冲层能够有效 消除VO₂薄膜与金属薄膜之间的巨大应力, 制备出具有明显相变特性的VO₂薄膜. 当缓冲层达到0.7 μm以上, 获得的薄膜具有明显的(011)晶面择优取向, 表面平整致密, 相变前后电阻率变化达到3个数量级以上. 基于该技术制备了Pt-SiO₂/VO₂-Au三明治结构, 通过在垂直膜面方向施加很小的驱动电压, 观察到明显的阶梯电流跳跃, 证实实现了电致绝缘体–金属相变过程. 该薄膜制备工艺简单, 性能稳定, 器件结构灵活可应用于集成式电控功能器件. 关键词： 二氧化钒薄膜 相变特性 电致相变 阈值电压     

硅基二氧化钒相变薄膜电学特性研究

本文以原子层沉积超薄氧化铝(Al₂ O₃)为过渡层, 采用射频反应磁控溅射法在硅半导体基片上制备了颗粒致密并具有(011)择优取向的二氧化钒(VO₂)薄膜. 该薄膜具有显著的绝缘体–金属相变特性, 相变电阻变化超过3 个数量级, 热滞回线宽度约为6℃. 基于VO₂薄膜构建了平面二端器件并测试了不同温度下I-V曲线, 观测到超过2个数量级的电流跃迁幅度, 显示了优越的电致相变特性. 室温下电致相变阈值电压为8.6 V, 电致相变弛豫电压宽度约0.1 V. 随着温度升高到60℃, 其电致相变所需要的阈值电压减小到2.7 V. 本实验制备的VO₂薄膜在光电存储、开关、太赫兹调控器件中具有广泛的应用价值.     

温度电压双可控宽带太赫兹极化转换/吸收超表面

提出了一种基于二氧化钒（VO₂）和石墨烯材料的温度电压双可控宽带极化转换/吸收超表面。通过调控超表面中VO₂和石墨烯的电导特性能够实现对极化转换和吸收功能的控制。结果显示：当VO₂处于金属态且石墨烯处于绝缘态时,超表面工作在宽带极化转换模式,在1.57～2.49 THz范围内可实现线极化转换功能;当VO₂处于绝缘态且石墨烯处于金属态时,超表面的工作状态切换为吸收模式,在1.56～2.99 THz范围内的吸收率均大于90%;极化转换和吸收性能可以分别通过控制VO₂的温度和石墨烯的偏置电压来调控。此外,通过本征模、阻抗匹配理论和电流磁场分布解释了该超表面的工作原理,并讨论了其工作性能在不同结构参数和入射角度下的稳定性。     

基于同一平面Au-VO2谐振器的可切换双功能超表面

本文基于二氧化钒(VO₂)温控相变特性，提出了一种可实现宽带极化转换和宽带吸收的可切换双功能超薄超表面。该超表面由位于同一平面的顶层Au-VO₂谐振器，中间硅(Si)介质层和底层连续金薄膜组成。室温时VO₂处于绝缘态，该超表面可作为宽带极化转换器，在1.76～12.50 THz范围内，极化转换率(PCR)达到90%以上，相对带宽为34.7%，且具有广角度入射的极化转换性能；当温度升高到68^?C时，VO₂处于金属态，超表面可作为宽带吸收器，在1.61～2.65 THz频段吸收率超过90%，相对带宽为48.8%，具有极化不敏感和广角入射的吸收特性。另外，通过本征模分解、电流电场分布以及阻抗匹配理论详细阐释了该超表面的工作机制。本文所提出的超表面仅采用VO₂一种相变材料，极化转换和吸收谐振器位于同一平面，其厚度仅为最小和最大工作波长的1/11和1/16，且具有灵活的可调控特性，可应用于开关、吸收器、极化转换器和隔离器等设备。     

VO$lt;sub$gt;2$lt;/sub$gt;/AZO复合薄膜的制备及其光电特性研究

采用直流磁控溅射和后退火氧化的方法在掺铝氧化锌(AZO)导电玻璃上制备了二氧化钒(VO₂)薄膜,研究了不同的退火温度、退火时间对VO₂/AZO复合薄膜制备的影响,并对复合薄膜的结构、组分、光电特性进行了测试与分析. 结果表明,导电玻璃上的AZO没有改变VO₂的取向生长,但明显改变了VO₂薄膜的表面形貌特征. 与用相同工艺和条件在普通玻璃基底上制备的VO₂薄膜相比,VO₂/AZO复合薄膜的相变温度降低约25 ℃,热滞回线宽度收窄至6 ℃,相变前后可见光透过率均在50%以上,1500 nm处红外透过率约为55%和21%,电阻率变化达3 个数量级. 该复合薄膜表面平滑致密,制备工艺简单,性能稳定,可应用于新型光电器件. 关键词： 2')" href="#">VO₂ AZO 热致相变 光电特性     

纳米VO2/ZnO复合薄膜的热致变色特性研究

为提高VO₂薄膜的热致变色性能,采用纳米结构和复合结构二者相结合的方法,通过磁控溅射技术先在玻璃衬底上制备高(002)取向ZnO薄膜,再在ZnO层上室温沉积钒金属薄膜,最后经热氧化处理获得纳米结构VO₂/ZnO复合薄膜.利用变温拉曼光谱观察分析了VO₂/ZnO薄膜相变前后的晶格畸变和键态的演变过程,讨论了薄膜的结构与热致红外开关特性和相变温度的内在关系.结果显示,与相同条件获得的同厚度的单层VO₂薄膜相比,纳米VO关键词： ZnO 2')" href="#">VO₂ 纳米复合薄膜 热致变色 拉曼光谱     

基于VO2薄膜相变原理的温控太赫兹超材料调制器

利用二氧化钒薄膜绝缘相–金属相的相变特性, 提出了一种基于超材料的温控太赫兹调制器, 研究了相变超材料在太赫兹波段的传输特性和温控可调谐特性. 当入射太赫兹波为水平偏振或垂直偏振状态时, 器件的透过率谱线在1 THz附近呈现出两个独立的、中心频率分别为1.3 THz和1.7 THz、 带宽分别为0.2 THz和0.35 THz的 透射宽带. 当温度从40℃至80℃变化时, 两宽带的透过率发生明显的降低, 在二氧化钒的相变温度(68℃)时尤其灵敏, 对入射光的二种偏振状态, 调制深度均达到60%以上, 实现了良好的调制效果. 关键词： 太赫兹超材料 2薄膜')" href="#">VO₂薄膜 调制器 相变     

二氧化钒薄膜光致绝缘体-金属相变的太赫兹时域光谱研究

二氧化钒薄膜在光的照射下,会从绝缘体相变为金属,伴随有电导率的剧变,该现象称之为光致绝缘体-金属相变。二氧化钒薄膜的这种相变对于太赫兹波段的调制器或者其他功能器件有重要应用。利用太赫兹时域光谱技术研究了二氧化钒薄膜光致绝缘体-金属相变前后的透射光谱变化,分析了该薄膜的这种光致相变在太赫兹波段的特性。实验中二氧化钒薄膜相变成金属的过程分别通过连续激光照射和飞秒激光照射实现。两种照射方式下,均观察到了明显的太赫兹波形变化,并且随着照射光功率的增大,信号的幅度衰减以及时域波形畸变逐渐加剧。进而通过对透射太赫兹时域信号的傅里叶变换光谱分析发现,在照射光功率增加时,不但该薄膜的透射光谱幅值在下降,而且其谱线形状也在随之改变,其原因为二氧化钒薄膜的色散特性在光照条件下逐渐趋向金属性所致。为清晰的描述光致相变的色散特点,用二氧化钒薄膜光照前后透射光谱的幅度差定义了透射率调制函数来描述上述现象。在透射率调制函数曲线上,能够明显的看出二氧化钒的这种光致相变在太赫兹波段具有强烈的频率相关性质,并且随照射光功率变化呈规律性演化。进一步对比发现,虽然连续光和飞秒激光照射方式都能引发光致相变,但在同样透射光谱情况下,对应的激发光功率存在明显不同,对这两种照射方式下的相变效率差别进行了分析和讨论。     

二氧化钒薄膜低温制备及其太赫兹调制特性研究

针对二氧化钒(VO2)薄膜在可调谐太赫兹功能器件中的应用,利用低温磁控溅射技术,在太赫兹和光学频段透明的BK7玻璃上制备出高质量的VO2薄膜.晶体结构和微观形貌分析显示薄膜为单相VO2单斜金红石结构,具有明显的(011)晶面择优取向,结构致密,表面平整.利用四探针技术和太赫兹时域光谱系统分析了薄膜的绝缘体-金属相变特性,发现相变过程中薄膜电阻率变化达到4个数量级,同时对太赫兹透射强度具有强烈的调制作用,调制深度高达89％.通过电学相变和太赫兹光学相变特性的对比研究,证实薄膜的电阻率突变主要与逾渗通路的形成有关,而太赫兹幅度的调制则来源于薄膜中载流子浓度的变化.该薄膜制备简单,成膜质量高,太赫兹调制性能优异,可应用于太赫兹开关和调制器等集成式太赫兹功能器件.     

氧化法结合快速热处理制备VOx薄膜及其性质研究

采用磁控溅射法在单晶Si〈100〉基底上沉积金属钒(V)薄膜,在高纯氧环境下快速热处理制备具有相变特性的氧化钒(VOx)薄膜.利用X射线衍射仪、X射线光电子能谱和扫描电子显微镜对薄膜结晶结构、薄膜中V的价态与组分及表面微观形貌进行分析,应用四探针测试方法和太赫兹时域频谱技术对样品的电学和光学特性进行测试.结果表明:在一定范围的快速热处理保温温度和保温时间下,都可以制备出具有热致相变特性的氧化钒薄膜,相变前后薄膜的方块电阻变化超过两个数量级,薄膜成分主要由V2O5和VO2混合组成,薄膜中V整体价态不因热处理条件改变而不同.在快速热处理条件范围内,500℃ 25 s左右条件下(中温区)制备出的氧化钒薄膜相变特性最佳,并且对THz波有一定的调制作用.     

Comparison of the optical responses of O-poor and O-rich thermochromic VOX films during semiconductor-to-metal transition

O-poor and O-rich thermochromic vanadium oxide (VO_X) nanostructured thin films were prepared by applying reactive direct current magnetron sputtering and post-annealing in oxygen ambient. UV–visible spectrophotometer and spectroscopic ellipsometry were used to investigate the optical properties of films. It was found that, when the O-poor VO_X thin film underwent semiconductor-to-metal transition, the values of optical conductivity and extinction coefficient in the visible region increased due to the existence of occupied band-gap states. This noticeable feature, however, was not observed for the O-rich film, which showed a similar optical behavior with the stoichiometric crystalline VO₂ films reported in the literatures. Moreover, the O-poor VO_X film exhibits consistent variations of transmission values in the visible/near-infrared region when it undergoes semiconductor-to-metal transition.     

Compare the phase transition properties of VO2 films from infrared to terahertz range

VO₂ with reversible semiconductor–metal phase transition properties is particularly available for the application in smart opto-electrical devices. However, there are rare reports on comparing its phase transition properties at different ranges. In this study, the VO₂ films are designed with the similar crystalline structure and stoichiometry, but different morphologies by inorganic and organic sol-gel methods, and their phase transition characteristics are compared both at infrared and terahertz range. The results indicate that the VO₂ film prepared by inorganic sol-gel method shows more compact nanostructure. It results in larger resistivity change, infrared and terahertz switching ratio in the VO₂ film. Moreover, it presents that the phase transition intensity of VO₂ film in terahertz range is more sensitive to its microstructure. This work is helpful for understanding the susceptibility of terahertz switching properties of VO₂ to its microstructure. And it can provide insights for the applications of VO₂ in terahertz smart devices.     

Measurements of terahertz electrical conductivity of intense laser-heated dense aluminum plasmas

We report the electrical conductivity of laser-produced warm dense aluminum plasmas measured using single-shot ultrafast terahertz (THz) frequency spectroscopy. In contrast with experiments performed at optical frequencies, measurements based upon THz probe reflectivity directly determine a quasi-dc electrical conductivity, and therefore the analysis does not require a free-electron Drude model based extrapolation to recover the near zero frequency conductivity. In fact, our experimental results indicate that the Drude model breaks down for warm (>0.6 eV), moderate-dense (<1.6 g/cm(3)) aluminum at THz frequencies. A calculation of THz reflectivity over a non-Fresnel boundary in dense plasmas is also presented.     

Oxygen pressure induced structure,morphology and phase-transition for VO2/c-sapphire films by PLD

To investigate the effects of oxygen pressure on the structural and phase transition properties for VO₂/c-sapphire, highly orientated VO₂ thin films were grown on (0001) sapphire substrates by pulsed laser deposition (PLD) with different oxygen pressures. The crystal structure, morphology and component of the films were systematically investigated. The temperature-dependent resistance (R-T) measurement was conducted, which showed the distinct phase transition characteristic for the prepared films. The results indicate that the oxygen pressure plays an important role for the VO₂ film preparation. The film grown at 1.7 Pa has lower phase transition temperature, higher film strain, and smaller grain size than that at 5.4 Pa, while no obvious crystal phase transition is observed. The experiment suggests that even a small change in oxygen pressure can influence the structure, morphology and phase-transition behavior of VO₂ films obviously, and its potential causes are mainly attributed to the reduction of the kinetic energy to the substrate for target atoms caused by the oxygen pressure, the resulting grain aggregation and interfacial stress.     

Electrical,optical and structural properties of pure and gold-coated VO2 thin films on quartz substrate

In the present study, vanadium dioxide films were grown on quartz glass substrate by reactive KrF laser ablation technique using a vanadium dioxide target. The gold films of various thicknesses were then deposited on the VO₂ film by sputtering technique. Films were characterized by X-ray diffraction to determine crystallography, by four-point probe to determine the electrical property and by double-beam spectrophotometry to determine optical reflection and transmission behaviour in the 200–2500 nm spectral region. The resistance per square of VO₂ thin film decreases by two orders of magnitude across the metal insulator transition (MIT). The optical transmittance and reflectance exhibits, strong temperature dependence in the infrared region without a significant change in the visible region for VO₂ thin films. The presence of gold layer on VO₂ films significantly reduces the resistance per square, the critical temperature and percentage transmittance of the materials.     

Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer

VO₂ thin films are grown on glass substrates by pulsed laser deposition using vanadium metal as a target. In this study, a ZnO thin film was used as a buffer layer for the growth of VO₂ thin films on glass substrates. X-ray diffraction studies showed that the VO₂ thin film had b-axis preferential orientation on a c-axis oriented ZnO buffer layer. The thickness of the ZnO buffer layer and the oxygen pressure during VO₂ deposition were optimized to grow highly b-axis oriented VO₂ thin films. The metal-insulator transition properties of the VO₂ film samples were investigated in terms of infrared reflectance and electrical resistance with varying temperatures.     

Doping dependent evolution of infrared spectra in underdoped YBa2Cu3Oy in terms of two-component optical conductivity

In access to optical spectroscopy of heavily underdoped detwinned YBa₂Cu₃O_y (YBCO) crystals, we re-examine the doping dependent evolution of infrared spectra in the CuO₂ plane of underdoped YBCO in terms of two-component optical conductivity. The extended Drude model analysis is applied to the two-component conductivity, and the results are compared with experimental data in the pseudogap state. We demonstrate that a model consisting of a Drude and Lorentz oscillator components reproduces characteristics of infrared spectra in underdoped YBCO.