Growth and physical properties of sol–gel derived Co doped ZnO thin film

Zn_1−xCo_xO films were grown on glass by sol–gel spin coating process. The Zn_1−xCo_xO thin films with 10 at.% Co were highly c-axis oriented. The electrical resistivity of the films at 10 at.% Co had the lowest value due to the highest c-axis orientation. XPS and AGM analyses indicated that Co metal clusters weren’t formed, and the ferromagnetism was appeared at room temperature. The characteristics of the electrical resistivity and room temperature ferromagnetism of sol–gel derived Zn_1−xCo_xO films suggest a potential application to dilute magnetic semiconductor devices.     

Alloy formation at the Ni–Al interface for nickel films deposited on Al(110) surfaces

Alloy formation at the Ni–Al interface for thin nickel films deposited on Al(110) surfaces has been studied using high-energy ion scattering/channeling (HEIS) and X-ray photoelectron spectroscopy (XPS). For nickel atoms deposited at room temperature on Al(110), a large amount of nickel–aluminum intermixing occurs at the interface. For the first two monolayers (ML) of deposited nickel, an NiAl-like compound is formed. The intermixing continues with a different rate, forming an Ni₃Al-like compound for nickel coverages from 2 to 8 ML, at which point a nickel metal film begins to grow on the surface. Nickel atoms deposited at 250°C on the Al(110) surface exhibit no surface compound formation, but diffuse up to 400 Å into the aluminum substrate. Interatomic potentials based on the embedded-atom method (EAM) are used in a Monte Carlo approach to simulate the evolution of the Ni–Al(110) interface as a function of the nickel coverage. The calculated ion-scattering yields and X-ray photoelectron intensities from nickel and aluminum atoms in these simulated interfaces are in good quantitative agreement with the experimental results. The simulations show a high-density Ni–Al alloy forming at the Al(110) surface which apparently inhibits outward diffusion of aluminum, leading to the more nickel-rich alloy and finally nickel film growth. The ion-scattering simulations show an unusually large amount of backscattering occurring below the Ni–Al(110) interface, apparently associated with defocusing of the incident ion beam.     

Cu2ZnSn(S1–xSex)4 thin film solar cells prepared by water‐based solution process

The kesterite Cu₂ZnSn(S_1–xSe_x)₄ (CZTSSe) thin film solar cell has been developed rapidly due to its excellence in structural and optical properties and its abundance in raw materials. Both vacuum‐based and solution‐based methods have been successfully employed to fabricate CZTSSe thin film solar cells. In this Letter, we report an environmentally friendly, water‐based, solution process for fabrication of high‐efficiency CZTSSe thin film solar cells. High quality CZTSSe thin film is obtained by selenization under high temperature and Se vapor. An efficiency of 6.2% is achieved on CZTSSe thin film solar cell fabricated by such water‐based solution process. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

N掺杂SiO2纳米薄膜的制备及其磁性

利用射频磁控反应溅射技术,制备了氮掺杂的SiO₂纳米薄膜.发现N掺杂SiO₂体系纳米薄膜具有铁磁性.较小的氮化硅颗粒均匀分布在氧化硅基质中有利于磁有序的形成.基底温度为400℃时,样品薄膜具有最大的饱和磁化强度和矫顽力,分别为35 emu/cm³和75 Oe.薄膜的磁性可能产生于氮化硅和氧化硅的界面.理论计算表明,N掺杂SiO₂体系具有净自旋.同时,由氮化硅和氧化硅界面之间的电荷转移导致的轨道磁矩也会对样品的磁性有贡献 关键词： 2薄膜')" href="#">N掺杂SiO₂薄膜 射频磁控反应溅射 界面磁性 基底温度     

Surface resistance measurements at the metal/electrolyte interface of Ag(100) and Ag(111) thin film electrodes

The conductivity of thin film metal electrodes with a thickness of the order of the mean free path of the conduction electrons (50 nm at 300 K) is sensitive to several processes on the metal surface (e.g. adsorption and desorption of ions). We developed epitaxially grown Ag(100)/MgO(100) and Ag(111)/TiO₂(110) electrodes of 20 nm thickness. The change in the surface resistance of Ag(100) thin film electrodes during adsorption of the halide ions Cl⁻, Br⁻ and I⁻ shows the different strengths of specific adsorption. We investigated the phase transition of thiocyanate (SCN⁻) on Ag(100) electrodes by combining the surface resistance method with voltammetric, capacitance and ex-situ XPS measurements. The influence of adsorbed uracil on the resistance of Ag(100) films was demonstrated. The surface resistance is very sensitive to small concentrations of metal cations (e.g. Tl⁺). The surface resistance of Ag(100) and Ag(111) thin film electrodes shows the typical difference in the stripping potential of Tl⁺ of about 100 mV.     

Soft X-ray emission study of thermally treated Ni(film)/4H–SiC(substrate) interface

Deposition of Ni as contact on 4H–SiC has been investigated. Ni/4H–SiC samples were annealed at temperatures of 600, 800 and 950 °C for 30 min and were non-destructively characterized by soft X-ray emission spectroscopy (SXES) using synchrotron radiation as excitation. Si L_2,3 SXE showed the formation of Ni₂Si for all annealing temperatures. The C K SXE indicated the formation of graphite and graphitic carbons at annealing temperatures of 950 °C and below 800 °C, respectively.     

Low-energy ion-induced electron emission from a MgO(100) thin film: the role of the MgO-substrate interface

We present a detailed study of the electron emission from a thin MgO(100) film on a Mo substrate, bombarded with slow He+, Ne+, and Ar+ ions. Neither the high absolute number of emitted electrons per incoming ion nor the electron spectra can be due to Auger neutralization of the incoming ions at the MgO surface alone. Therefore, an additional mechanism is proposed: holes created in the MgO film are transported to the MgO-substrate interface where they give rise to an Auger neutralization process involving two electrons from the metal substrate conduction band.     

The effect on the annealing temperature of Li doped ZnO thin film for a film bulk acoustic resonator

We investigated the material and electrical properties of Li doped ZnO thin film (ZLO) with variation of the annealing temperature. In the 500 C sample, ZLO film showed well defined (002) c-axis orientation and a full width half-maximum property of 0.25. The electrical properties of ZLO thin films showed the excellent specific resistance of 1.5×10¹¹ Ω cm. Finally, the frequency characteristics of the ZLO thin film FBAR, according to the annealing temperature, showed improvement of the return loss from 24.48 to 30.02 dB at a resonant frequency of 1.17 GHz.     

Influence of interface structures on Sn thin film growth on Si(1 1 1) surface

Using coaxial impact collision ion scattering spectroscopy, we have investigated Sn thin film growth on Si(1 1 1)√3×√3-Sn and hydrogen-terminated Si(1 1 1) surfaces at room temperature. Sn formed crystalline film with β-Sn structure on Si(1 1 1)√3×√3-Sn surface, but on the hydrogen-terminated Si(1 1 1) surface, the epitaxial growth of Sn thin film was disrupted, and Sn grew as a polycrystalline film. The growth orientational relationship of the Sn film grown on Si(1 1 1)√3×√3-Sn surface was found to be

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. In the works, we found that interface structure plays a decisive role for the growth mode, crystallinity, and growth orientation of the growth of thin film.     

Adatom lifetime in film growth at solid surfaces in the framework of the Johnson–Mehl–Avrami–Kolmogorov model

On the basis of the quasi-static approximation and for simultaneous nucleation the adatom lifetime, τ, during film growth at solid surfaces has been computed by Monte Carlo (MC) simulation. The quantity DN₀τ, N₀ and D being respectively the cluster density and the adatom diffusion coefficient, is found to depend upon the portion of surface covered by clusters and, very weakly, on N₀. Moreover, a stochastic approach based on the Johnson–Mehl–Avrami–Kolmogorov (JMAK) theory has been developed to obtain the analytical expression of the MC curve. The collision factor of the mean island has been calculated and compared with those previously obtained from the uniform depletion approximation and the lattice approximation.     

可擦除光存储教学实验的开设

研究了在聚甲基丙稀酸甲脂（PMMA）中掺杂羚羟基亚甲基苯胺N-salicylideneaniline(SA)样品的可擦除光存储特性，依据相干光调制光强分布诱导光异构形成相位光栅和光异构产生压力梯度引起质量输运形成表面光栅机理，分析了两光栅的相位关系，合理解释了写入过程和擦除过程中衍射信号强度随时间的变化关系，通过阐述上述复杂的分析过程，培养和提高学生分析问题与解决问题的能力。     

Point defects along metallic atomic wires on vicinal Si surfaces: Si(5 5 7)–Au and Si(5 5 3)–Au

Point defects on the metallic atomic wires induced by Au adsorbates on vicinal Si surfaces were investigated using scanning tunneling microscopy and spectroscopy (STM and STS). High-resolution STM images revealed that there exist several different types of defects on the Si(5 5 7)–Au surface, which are categorized by their apparent bias-dependent images and compared to the previous report on Si(5 5 3)–Au [Phys. Rev. B (2007) 205325]. The chemical characteristics of these defects were investigated by monitoring them upon the variation of the Au coverage and the adsorption of water molecules. The chemical origins and the tentative atomic structures of the defects are suggested as Si adatoms (and dimers) in different registries, the Au deficiency on terraces, and water molecules adsorbed dissociatively on step edges, respectively. STS measurements disclosed the electronic property of the majority kinds of defects on both Si(5 5 7)–Au and Si(5 5 3)–Au surfaces. In particular, the dominating water-induced defects on both surfaces induce a substantial band gap of about 0.5 eV in clear contrast to Si adatom-type defects. The conduction channels along the metallic step-edge chains thus must be very susceptible to the contamination through the electronic termination by the water adsorption.     

Effects of poly(ethylene glycol) on electrical conductivity of poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonic acid) film

A series of poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonic acid) composite thin films with prescribed concentrations of poly(ethylene glycol) were prepared. The PEDOT–PSS pristine film and PEDOT–PSS/PEG films were studied using four-probe method, photoelectron spectroscopy and atomic force microscopy. The electrical conductivity of PEDOT–PSS/PEG hybrid films was found to be enhanced compared to the PEDOT–PSS pristine film, depending on the PEG concentration and molecular weight. XPS analysis and AFM results showed that PEG induces the phase separation between the PEDOT–PSS conducting particles and the excessive PSSNa shell. Simultaneously PEG may form hydrogen bond with sulfonic groups of PSSH, and hence weaken the electrostatic interactions between PEDOT cationic chains and PSS anionic chains. These resulted in the creation of a better conduction pathway among PEDOT–PSS particles, attributed to the improvement of conductivity.     

Surface dynamics of Mo(1 1 0)–H and Mo(1 1 0)–Li

We compare the surface dynamics of the adsorbate systems Mo(1 1 0)–H and Mo(1 1 0)–Li. In both cases electron energy loss spectroscopy measurements revealed strong substrate surface phonon anomalies. Whereas the phonon anomaly of the hydrogen-covered surface was unequivocally assigned to be of the Kohn type, the anomalous behavior of the surface phonons of the lithium-covered surface remained obscure. In this paper we develop an experimental criterion based on the dispersion of adsorbate phonons, which allows to decide whether the observed substrate surface phonon anomaly is of the Kohn type or not. Employing this criterion we now definitely rule out that the anomaly on Mo(1 1 0)–Li is due to the Kohn effect.     

Determination and analysis of the dispersive optical constants of the 5,5′,6,6′-tetraphenyl-2,2′-bi([1,3]dithiolo[4,5-b][1,4]dithiinylidene)–DDQ complex thin film

The synthesis and optical properties of the 5,5′,6,6′-tetraphenyl-2,2′-bi([1,3]dithiolo [4,5-b] [1,4]dithiinylidene)–2,3-dichloro-5,6-dicyano-p-benzoquinone (DDQ) complex thin film were investigated by the optical characterization. The optical constants such as refractive index, extinction coefficient and absorption coefficient were determined using the transmittance T(λ) and reflectance R(λ) spectra and the refractive index dispersion was analyzed using single oscillator of Wemple–Didomenico model. The single oscillator energy E₀ and the dispersion energy E_d were calculated. The effect of temperature on refractive dispersion and optical band gap E_g is also discussed. As a result, the annealing temperatures have an important effect on refractive index of thin film.     

Energy transfer in a thin film of TPD fluorescent molecules doped with PtOEP and Ir(ppy)3 phosphorescent molecules

A thin film of triphenylamine dimer, N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)-benzidine (TPD), doped with fac tris(2-phenylpyridine) iridium (Ir(ppy)₃) and platinum octaethyl porphine (PtOEP) is characterized by photoluminescence emission measurements at several excitation wavelengths and photoluminescence excitation measurements at relevant emission wavelengths in the temperature range from 10 K to room temperature. The investigated film is a phosphorescent OLED material with singlet absorbing host (TPD) and triplet emitting guests [Ir(ppy)₃ and PtOEP]. At short wavelength excitation simultaneous triple band emission from singlet TPD, triplet Ir(ppy)₃ and TPD, and from triplet PtOEP is observed. Förster-type singlet-singlet state energy transfer from TPD to Ir(ppy)₃ and PtOEP, intra-component intersystem crossing, and Dexter-type triplet-triplet energy transfer between the substituents are studied.     

Leaky pseudo surface wave on the water–Si(110) interface

The present letter demonstrates that a leaky pseudo surface wave (LPSW) should exist on the interface of water and a cubic crystal silicon (110) plane. The phase velocity distribution of the LPSW on the above interface has been theoretically predicted by the reflection coefficient analysis and experimentally measured by using acoustic spectro-microscopy (ASM). The measured phase velocity distribution of the LPSW is in good agreement with the predicted one.     

Self‐doping PPV oligomers – electrochemistry and structure of the self‐doped systems

A novel class of self‐doping conjugated oligomers, E,E‐2‐(sulfoalkoxy)‐5‐alkoxy‐1,4‐bis[2‐(2,4,6‐trimethoxyphenyl) ethenyl]benzenes, is presented. The synthesis and spectroscopic characterisation of five such oligomers are described, and an electrochemical analysis using cyclic voltammetry is performed to determine the anodic peak potentials. A structural study is performed on six self‐doping oligomers in which the structures and energies of the possible mono‐molecular forms of the electrically conducting doped material are described and evaluated using Hirshfeld charges and the Quantum Theory of Atoms In Molecules. Copyright © 2009 John Wiley & Sons, Ltd.     

Phenomenological theory for the melting of a thin lubricant film between two atomically smooth solid surfaces

A thermodynamic model is developed for the melting of an ultrathin lubricant film squeezed between two atomically smooth solid surfaces. To describe the state of lubricant, an excess volume parameter is introduced; it appears due to the chaos in the structure of a solid body induced by melting. This parameter increases with the total internal energy upon melting. Thermodynamic melting and shear melting are described. The dependences of the friction force on the lubricant temperature and the shear rate of friction surfaces are analyzed. The calculated results are compared to the experimental data.     

Surface energy evaluation of unhydrogenated DLC thin film deposited by thermionic vacuum arc (TVA) method

The aim of this paper is concerned with the surface energy evaluation by contact angle measurements of DLC films deposited by thermionic vacuum arc (TVA) on different substrates: glass plate, zinc foil, stainless steel and alumina foil. TVA is an original method based on a combination of the evaporation by electron bombardment and anodic arc. The evaluation of the surface free energy has been carried out by surface energy evaluation system (SEE System). The influence of the experimental conditions is also investigated.