Ge diffusion on Si surfaces

Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 °C. Surface diffusion coefficients versus temperature have been measured.     

A temperature programmed desorption study of the reaction of methylacetylene on Pt(111) and Sn/Pt(111) surface alloys

The adsorption and reaction of methylacetylene (H₃CC≡CH) on Pt(111) and the p(2×2) and

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surface alloys were investigated with temperature programmed desorption, Auger electron spectroscopy and low energy electron diffraction. Hydrogenation of methylacetylene to form propylene is the most favored reaction pathway on all three surfaces accounting for ca 20% of the adsorbed monolayer. Addition of Sn to the Pt(111) surface to form these two ordered surface alloys suppresses the decomposition of methylacetylene to surface carbon. The alloy surfaces also greatly increase the amount of reversibly adsorbed methylacetylene, from none on Pt(111) to 60% of the adsorbed layer on the

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surface alloy. Methylacetylene reaction also leads to a small amount of desorption of benzene, along with butane, butene, isobutylene and ethylene. There is some difference in the yield of these other reaction products depending the Sn concentration, with the (2×2)-Sn/Pt(111) surface alloy having the highest selectivity for these. Despite previous experiments showing cyclotrimerization of acetylene to form benzene on the Pt–Sn surface alloys, the analogous reaction of methylacetylene on the alloy surfaces was not observed, that is, cyclotrimerization of methylacetylene to form trimethylbenzene. It is proposed that this and the high yield of propylene is due to facile dehydrogenation of methylacetylene because of the relatively weak H–CH₂CCH bond compared to acetylene. The desorption of several C₄ hydrocarbon products at low (<170 K) temperature indicates that some minor pathway involving C–C bond breaking is possible on these surfaces.     

Si(111)-(7×7)表面上Ge量子点的自组织生长

用扫描隧道显微镜研究了Si(111)(7×7)表面上Ge量子点的自组织生长.室温下用固相外延法在硅基底上沉积亚单层的Ge,然后在适当的温度下退火可以聚集形成有序的Ge量子点.由于Ge在Si(111)(7×7)表面选择性的吸附而形成有序的Ge量子点. 关键词： 锗 硅 扫描隧道显微镜 自组织生长     

Ge/Pb/Si(111)生长中Ge原子沿团簇边缘扩散的三维Monte-Carlo模拟

用动态Monte-Carlo方法对Ge在单层表面活性剂Pb覆盖的Si(111)表面上沿团簇边缘扩散进行三维模拟.重点讨论Ge原子是否沿团簇边缘扩散,沿边缘扩散时的最大扩散步数及最近邻原子数对三维生长的影响,并计算薄膜表面粗糙度研究三维生长模式.模拟表明Ge沿团簇边缘扩散的行为对薄膜生长模式的影响很大,同时讨论了ES势对三维生长模式的影响.     

Chemisorption of Au on Si（001） surface

The chemisorption of one monolayer of Au atoms on an ideal Si(001) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of the adsorption system of a Au atom on different sites are calculated. It is found that the most stable position is A site (top site) for the adsorbed Au atoms above the Si(001) surface. It is possible for the adsorbed Au atoms to sit below the Si(001) surface at the B_1 site(bridge site), resulting in a Au－Si mixed layer. This is in agreement with the experiment results. The layer projected density of states is calculated and compared with that of the clean surface. The charge transfer is also investigated.     

Ge adsorption on the Si(111) surface

Total energy calculations, performed for one monolayer of Ge adsorbed on Si(111), indicate that 1 × 1 models such as the atop site and hollow site adsorption geometries are unstable with respect to the formation of 2 × 1 Seiwatz chains of Ge adatoms. This result indicates that, for one monolayer coverage, Ge-Ge bonds are likely to form.     

Stabilization against initial oxidation using surface segregation of sulfur on Fe(1 0 0)

Surface segregation process of dissolved elements on a Fe(1 0 0) surface and the initial oxidation processes of the sulfur segregated surfaces were studied in situ by AES and RHEED. The surface enrichment of sulfur has formed a c(2×2) superstructure at elevated temperatures. The Fe(1 0 0)c(2×2)-S surface was found to have stabilization effect against initial oxidation. The retardation of oxidation was most enhanced when the sulfur surface concentration reached at the saturation coverage (1/2 ML). The possible physical origins of the stabilization effect are proposed.     

Electron resonances in VLEED from Cu(111)

The sensitivity of the VLEED I–V curves to the shape and the position of the barrier is shown for the image- type surface barriers. For demonstration and comparison with experimental data the intensities of specularly reflected electron beams from Cu(111) are computed by dynamical theory of electron diffraction. Image plane position changes and modifications of the saturation shape of the surface barrier induce pronounced changes in the I–V curves calculated with the image-type barrier. Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005.     

Photoemission studies of the surfactant-aided growth of Ge on Te-terminated Si(100)

The interactions of Ge adatoms with a Si(100) surface terminated by an ordered layer of Te have been studied in detail using XPS, SXPS, STM and LEED. It has been demonstrated that the Te layer has a surfactant action on the growth mode of the Ge in that the two dimensional growth regime is extended to at least 200 Å and the Te is seen to segregate to the growing Ge surface. The surface reconstruction of the Ge layer changes from (1 × 1) in the initial stages to (2 × 2) as growth proceeds and the surface population of Te is reduced. SXPS line shape analysis has indicated that the initial stages of Ge incorporation are characterised by the formation of small islands above those surface Si sites not fully coordinated with Te. Continued growth of such islands is, however, restricted due to their high surface free energy with respect to the surrounding Te-terminated areas. Ge atoms therefore site-exchange with Te atoms in bridge sites, thus becoming incorporated onto the Si lattice and displacing the Te to bridge sites on the growing surface. In this manner islanding is prevented and two-dimensional growth continues beyond the critical thickness. No evidence is seen for any significant incorporation of the Te within the growing Ge layer.     

Bromine adsorption on Cu(111)

The dissociative chemisorption of molecular bromine on Cu(111) at 300 K has been studied using ultraviolet photoelectron spectroscopy (UPS), Auger electron spectroscopy (AES), low energy electron diffraction (LEED) and work function change measurements. A (√3 × √3)R30° structure is formed initially at a bromine coverage of 0.33 ML. This then converts to a (9√3 × 9√3)R30° compression structure with a coverage of 0.41 ML. The coincidence distance of the compression structure is determined entirely by the van der Waals diameter of adsorbed bromine. The applicability of using the van der Waals diameters of the three halogens, Cl, Br and I, to predict the saturation compression structures on Cu(111), is discussed.     

Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(1 1 1)7 × 7 surface

Lead (Pb) has been a prototypical system to study diffusion and reconstruction of silicon surfaces. However, there is a discrepancy in literature regarding the critical coverage at which island formation takes place in the Stranski-Krastanov (S-K) mode. We address this issue by studying the initial stages of evolution of the Pb/Si(1 1 1)7 × 7 system by careful experiments in ultra-high vacuum with in situ characterization by auger electron spectroscopy, electron energy loss spectroscopy and low-energy electron diffraction. We have adsorbed Pb onto clean Si(1 1 1 )7 × 7 surface with sub-monolayer control at different flux rates of 0.05 ML/min, 0.14 ML/min and 0.22 ML/min, at room temperature. The results clearly show that the coverage of the Pb adlayer before the onset of 3D Pb islands in the S-K mode depends on the flux rates. LEED results show the persistence of the (7 × 7) substrate reconstruction until the onset of the island formation, while EELS results do not show any intermixing at the interface. This suggests that the flux rates influence the kinetics of growth and the passivation of dangling bonds to result in the observed rate-dependent adlayer coverages.     

Disproportionation phenomena on free and strained Sn/Ge(111) and Sn/Si(111) surfaces

Distortions of the sqrt[3]x sqrt[3] Sn/Ge(111) and Sn/Si(111) surfaces are shown to reflect a disproportionation of an integer pseudocharge, Q, related to the surface band occupancy. A novel understanding of the (3 x 3)-1U ("1 up, 2 down") and 2U ("2 up, 1 down") distortions of Sn/Ge(111) is obtained by a theoretical study of the phase diagram under strain. Positive strain keeps the unstrained value Q=3 but removes distortions. Negative strain attracts pseudocharge from the valence band causing first a (3 x 3)-2U distortion (Q=4) on both Sn/Ge and Sn/Si, and eventually a (sqrt[3] x sqrt[3])-3U ("all up") state with Q=6. The possibility of a fluctuating phase in unstrained Sn/Si(111) is discussed.     

Triangular Mott-Hubbard insulator phases of Sn/Si(111) and Sn/Ge(111) surfaces

The ground state of Sn/Si(111) and Sn/Ge(111) surface alpha phases is reexamined theoretically, based on ab initio calculations where correlations are approximately included through the orbital dependence of the Coulomb interaction (in the local density+Hubbard U approximation). The effect of correlations is to destabilize the vertical buckling in Sn/Ge(111) and to make the surface magnetic, with a metal-insulator transition for both systems. This signals the onset of a stable narrow gap Mott-Hubbard insulating state, in agreement with very recent experiments. Antiferromagnetic exchange is proposed to be responsible for the observed Gamma-point photoemission intensity, as well as for the partial metallization observed above 60 K in Sn/Si(111). Extrinsic metallization of Sn/Si(111) by, e.g., alkali doping, could lead to a novel 2D triangular superconducting state of this and similar surfaces.     

New surface phases for potassium adatoms on cleaved Si(111)

In a previous study (B. Reihl and K.O. Magnusson, Phys. Rev. B 42 (1990) 11 839) no change was observed in the LEED pattern from the 2 × 1 pattern of the clean Si(111) surface upon potassium adsorption. In contrast to this paper, we observe six surface phases during room temperature dosing of K on the cleaved Si(111) surface. In addition, we observe a 3 × 1 pattern on the cleaved K/Si(111) surface upon annealing. This paper will provide photographs of the new phases observed with LEED. It also will set limits on the K coverage required for these phases using results from photoemission and secondary electron cutoff measurements. Tentative models for these surfaces will be proposed. These new LEED results show a more complex interaction between K and the cleaved Si(111) surface than previously thought and hopefully will encourage further exploration of adsorption on the cleaved Si(111) surface.     

States of water molecule adsorbed on Si(111) surface

Calculated electronic energy structure of an overlayer of water molecules chemisorbed on Si(111), with a molecular plane perpendicular to the surface, reveals that 3a₁ molecular state is removed upon adsorption, and the resulting state densities cannot be reconciled with the UPS spectrum. These results, and state densities obtained from different atomic configurations are interpreted to rule out the molecular adsorption on Si(111) surface at room temperature.     

Oxidation of the hydrogenated diamond (100) surface

The surface composition and structure of natural diamond (100) surfaces subsequently oxidized with activated oxygen at T_sub≤35°C were investigated with high-resolution electron energy loss spectroscopy (HREELS), Auger electron spectroscopy, electron loss spectroscopy (ELS) and low-energy electron diffraction (LEED). Complete surface oxidation (oxygen coverage θ=1 ML) required doses of hundreds of kilolangmuirs of O₂. HREELS vibrational spectra permitted identification of the specific surface oxygen species, and also provided information about the diamond surface states. Most surface sites lost their hydrogen at least once before becoming oxidized. The oxygen coverage θ increased quickly at first, and then more slowly as saturation was approached; different mechanisms or sites may have accounted for the decreased rate. The relative distribution of oxygen species varied with the oxidation conditions. Ether, carbonyl and hydroxyl groups appeared during the initial stages of oxidation, but the hydroxyl groups disappeared at higher coverages. Bridge-bonded ether groups dominated at saturation coverage, although smaller amounts of carbonyl and hydroxyl were still observed. The carbonyl and C---H stretch frequencies increased with oxygen dose due to formation of higher oxidation states and/or hydrogen bonding between adjacent groups. ELS revealed only a low concentration of C=C dimers on the oxidized surfaces, and no evidence of graphitization.

Surfaces generated by oxygen addition and then desorption were more reactive than surfaces generated by hydrogen desorption. Oxidized surfaces that were heated in vacuum and then rehydrogenated did not recover the sharp LEED patterns and HREELS spectra of the original plasma-smoothed surface. This effect was presumably due to surface roughening caused by oxygen desorption as CO and CO₂, and creation of reactive high-energy sites that quickly bonded to available background gases and prevented large areas of organized surface reconstruction.     

Surface segregation of aluminum atoms on Cu-9 at.% Al(1 1 1) studied by Auger electron spectroscopy and low energy electron diffraction

Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) were applied to investigate the segregation of aluminum atoms on a Cu-9 at.% Al(1 1 1) surface. We observed that the Al concentration in the top layer ranged between about 9 and 36 at.% after the sample we used was annealed at different temperatures. The phenomenon of Al atoms segregating on the surfaces was explained well by considering the diffusion length of Al atoms in bulk Cu. LEED measurements showed that R30° structures grew as the concentration of Al atoms increased. The segregation phenomena on surfaces resulted in a stable two-dimensional Cu₆₇Al₃₃ alloy phase in the top layer.     

锗硅表面结构和动态过程的STM研究

尽管作为微电子工业的基础,硅和锗的表面和界面几十年来一直是研究的热点,但和纳米技术等不断提出的问题相比,对它们的了解仍很不够。为此,最近我们用扫描隧道显微镜和低能电子衍射方法,对锗硅表面的稳定性、宏观小面化、纳米小面化、小面化的规律、稳定表面的比自由能、表面原子结构以及表面和亚表面原子的动态过程进行了大量的系统的研究。文章综述已取得的研究结果。这些结果除具有重要的基础意义外,对半导体异质外延生长衬底选择,以及量子线和量子点自组织生长模板的选择都会有帮助。     

TPD, HREELS and UPS study of the adsorption and reaction of methyl nitrite (CH3ONO) on Pt(111)

The adsorption and reaction of methyl nitrite (CH₃ONO, CD₃ONO) on Pt(111) was studied using HREELS, UPS, TPD, AES, and LEED. Adsorption of methyl nitrite on Pt(111) at 105 K forms a chemisorbed monolayer with a coverage of 0.25 ML, a physisorbed second layer with the same coverage that desorbs at 134 K, and a condensed multilayer that desorbs at 117 K. The Pt(111) surface is very reactive towards chemisorbed methyl nitrite; adsorption in the monolayer is completely irreversible. CH₃ONO dissociates to form NO and an intermediate which subsequently decomposes to yield CO and H₂ at low coverages and methanol for CH₃ONO coverages above one-half monolayer. We propose that a methoxy intermediate is formed. At least some C–O bond breaking occurs during decomposition to leave carbon on the surface after TPD. UPS and HREELS show that some methyl nitrite decomposition occurs below 110 K and all of the methyl nitrite in the monolayer is decomposed by 165 K. Intermediates from methyl nitrite decomposition are also relatively unstable on the Pt(111) surface since coadsorbed NO, CO and H are formed below 225 K.     

Submonolayer structures of Ce adsorbed on Mo(110) surface

The surface structure of Ce adsorbed on a Mo(110) surface was studied by reflection high energy electron diffraction. Five kinds of surface structures were found with different deposition coverages in the submonolayer region. These structures have a common feature that Ce atoms possess a periodicity with double spacing at the atomic rows in the Mo[ 10] direction. Observed at 1 ML of Ce coverage was a surface structure related to a deformed fcc Ce(111) plane.