氧化锌纳米带的低温无催化热蒸发制备及其表征

通过纯锌粉蒸发，在600 ℃无催化条件下成功制备了高质量的不同形貌的ZnO纳米带.该制备方法中控制产物形貌和尺寸的关键是氧、氩及锌蒸气的流速及分压.扫描电镜及高分辩透射电镜观察显示，氧化锌纳米带具有规整光滑及齿状等不同形貌，且皆为单晶，其生长由固-气机理控制.室温光致发光谱表明，齿状氧化锌纳米带在390 nm附近形成紫外发射峰；在455～495 nm时，形成绿光发射峰，该处由4个次级发射峰组成.     

ZnO纳米棒薄膜的湿化学法制备及光致发光特性

在80 ℃水浴下, 采用简易的湿化学法在不导电玻璃基底上制备了ZnO纳米棒阵列, 利用X射线衍射仪(XRD)和场发射扫描电镜(FE-SEM)对样品的结构形貌进行了表征. 结果表明, 晶化30 min所得产物为六方纤锌矿相的ZnO纳米棒, 直径大约为80~90 nm. 为了分析不同的低温退火温度和退火气氛对其光致发光性能的影响, 研究了ZnO纳米棒薄膜在不同的后处理条件下的光致发光谱(PL). 实验结果表明, 在O₂气氛下于450 ℃退火1 h后, ZnO纳米棒薄膜的红光发射(约650 nm)强度相对在空气和5%H₂/95%N₂气氛下退火的样品变得更强, 而且该样品的激发波长范围(200~370 nm)与近紫外发光二极管(LEDs)的发射波长范围(350~420 nm)匹配得很好.     

化学气相输运法(CVT)制备微米级的喇叭管状ZnO晶体

氧化锌为直接带隙宽禁带半导体材料,由于其优良的光电性能,预计在未来光电信息领域有着巨大的应用前景,引起了广泛的研究兴趣.     

Structural and optical properties of ZnMgO nanostructures formed by Mg in-diffused ZnO nanowires

ZnMgO nanostructures with wurtzite phase were prepared by thermal diffusion of Mg into the ZnO nanowires. As ZnO light-emitting devices have been operated by using ZnMgO layers as energy barrier layers to confine the carriers, it is essential to realize the characterization of ZnMgO particularly. In this work, the Mg content in Zn_1−xMg_xO alloy determined by X-ray diffraction (XRD) and photoluminescence (PL) shows a good coincidence. The variation of lattice constant and the blueshift of near-band-edge emission indicate that Zn²⁺ ions are successfully substituted by Mg²⁺ ions in the ZnO lattice. In Raman-scattering studies, the change of E₂(high) phonon line shape in ZnO:Mg nanostructures reveals the microscopic substitutional disorder. In addition to the host phonons of ZnO, two additional bands around 383 and 510 cm⁻¹ are presumably attributed to the Mg-related vibrational modes.     

微波回流合成哑铃状氧化锌微晶

以乙酸锌和六次甲基四胺的水溶液为前驱体溶液,微波回流10min,成功制备出结晶性好的半导体哑铃状ZnO.用X-射线衍射分析、能量色散X射线分析和场发射扫描电子显微镜对粉体进行了表征.结果表明,ZnO呈哑铃状,单分散、粒径分布均匀,沿c轴择优取向对称生长,平均直径300nm,长度达微米级.并对哑铃状ZnO的生长过程进行了简单分析.     

Transport and Reaction Characteristics of Reconstructed Polyolefin Particles

The 3D spatial structure of porous polyethylene particles was reconstructed from their X‐ray micro‐tomography images. Several polyolefin particles with an artificial granular structure were generated. Transport in reconstructed particles was calculated for the case of a monomer diffusing through both the pores and the polymer. The calculated degassing characteristics of reconstructed polyolefin particles can be compared to experiments. Monomer mass transport limitations are important not only in the early stage of particle growth, but also in fully‐developed polyolefin particles. The problems and limitations of the developed method are discussed. The method developed allows prediction of the effect of particle structure on mass transport limitations for real particle structures.

     

Luminescence Property and Synthesis of Sulfur-doped ZnO Nanowires by Electrochemical Deposition

"Sulfur-doped zinc oxide (ZnO) nanowires were successfully synthesized by an electric field-assisted electrochemical deposition in porous anodized aluminum oxide template at room temperature. The structure, morphology, chemical composition and photoluminescence properties of the as-synthesized ZnO:S nanostructures were investigated. X-ray diffraction and the selected area electron diffraction results reveal that the as-ynthesized products are single phase with hexagonal wurtzite structure with a highly preferential orientation in the (101) direction. Transmission electron microscopy observations indicate that the nanowires are niform with an average diameter of 70 nm and length up to several tens of micrometers. X-ray photoelectron pectroscopy further reveals the presence of S in the ZnO nanowires. Room-temperature photoluminescences observed in the sulfur-doped ZnO nanowires which exhibits strong near-band-edge ultraviolet peaks at 378 and 392 nm and weak green emissions at 533 and 507 nm. A blue emission at 456 nm and violet emissions at around 406, 420, and 434 nm were also observed in the PL spectrum for the as-synthesized ZnO:S nanowires. The PL spectrum shows that S-doping had an obvious effect on the luminescence property of typical ZnO nanowires."     

等离子体增强MOCVD法生长ZnO薄膜

利用等离子体增强MOCVD法生长出 ZnO薄膜，用X射线衍射谱观察到位于 2θ34．56°处（0002）的衍射峰，表明ZnO沿c方向呈柱状生长．通过荧光光谱，观察到来自于激子的高强度的近带边紫外光发射（375um）．紫外发射光强度与深能级复合发射光强度比高达 193，显示出材料的高质量，并通过原子力显微镜加以验证．为了实现高阻ZnO薄膜，利用高温富氧分段退火和用N2 气进行掺氮两种方法生长高阻ZnO薄膜．结果表明，电阻率由0．65 Ω·cm分别升高到1100 Ω·cm（分段退火）和5×104Ω·cm（掺氮）．进一步比较发现，掺氮的样品不仅电阻率高，而且光荧光特性好，显示出更高的薄膜质量．     

直接沉积法制备棒状ZnO

在溶液体系中90 ℃下, 以三乙醇胺与醋酸锌为反应试剂, 用直接沉积法合成了微米及纳米尺寸的棒状ZnO粒子, 并对粒子进行了透射电镜(TEM)、X射线衍射(XRD)、热重(TG)和差热扫描量热分析(DSC)等表征. 通过晶体的成核和生长理论初步解释了棒状ZnO粒子的形成过程.     

Spectroelectrochemical Evaluation of a ZnO Optically Transparent Electrode Prepared by the Spin‐spray Technique

We present a novel zinc oxide (ZnO) optically transparent electrode (OTE) prepared by the spin‐spray technique for spectroelectrochemistry. The spin‐spray technique can deposit ZnO film at a low cost, high rate deposition, and at a low temperature (<100 °C) in a single step. This new technique provides good optical transparency and electrical conductivity for ZnO. The electrochemical and spectroelectrochemical properties of the ZnO electrode were investigated for varying thicknesses of ZnO using methylene blue as a redox indicator. A ZnO OTE chip that includes three electrodes on a glass chip was developed for thin‐layer spectroelectrochemistry. Moreover, the ZnO films were successfully applied in an electrochemical‐localized surface plasmon resonance (LSPR) method for methylene blue detection by using them as a transparent conducting substrate for loading gold nanoparticles.     

Der Chemische Transport von Mischkristallen im System NiO/ZnO

Chemical Vapor Transport of Solid Solutions. 2 Chemical Transport of NiO/ZnO‐Mixed Crystals By means of chemical vapor transport using HCl as transport agent (900 → 750 °C) it is possible to prepare ZnO‐rich and NiO‐rich mixed crystals in the system Zn/Ni/O. The mixed‐crystals are homogeneous. Thermodynamic calculations allow to understand the experiments.     

液相法制备取向ZnO纳米线阵列的场发射特性(英文)

采用水热合成工艺,在不同条件下制备了不同的一维取向ZnO纳米线阵列样品.用X射线衍射仪(XRD)、扫描电镜(SEM)及透射电镜(TEM)对样品的晶体结构和形貌等进行了表征,对样品的场发射特性进行了分析和比较,并用Fowler-Nordheim方程对影响ZnO纳米线场发射的因素进行了研究.结果表明,具有较低生长密度分布、较高的长径比和较尖锐生长端的ZnO纳米线阵列样品具有较好的场发射特性.     

ZnO超微粒子的EPR特性和光催化性能

利用XRD,TEM,XPS和EPR等研究了ZnO超微粒子的EPR特性和光催化性能.前驱物碱式碳酸锌在320,430,550和700℃经热处理制得的ZnO超微粒子粒径分别为13.5,19.3,26.1和38.5nm,属六方晶系纤锌矿结构;室温下ZnO超微粒子表现出稳定的单一谱线的EPR信号,其强度随粒径的增大而减小.而在液氮温度下,ZnO超微粒子的EPR谱具有6条强度不等的超精细谱线,在光催化氧化C₇H₁₆和SO₂过程中,其光催化活性随其EPR信号强度的减小而下降.说明O₂-空位在光催化反应中起重要作用.     

Preparation, structure and ultraviolet photoluminescence of ZnO films by a novel chemical method

A novel and simple chemical method was developed for the deposition of ZnO films from aqueous solution, integrating the merits of successive ionic layer adsorption and reaction with the chemical bath deposition technology. By this new method, dense and continuous ZnO thin films with good crystallinity can be prepared in a very short time, e.g., in about 20 min. Results show that as-deposited ZnO films on glass and Si (1 0 0) exhibit hexagonal wurtzite crystalline structure and the preferential orientation along (0 0 2) plane. With a dense and continuous appearance, the film is composed of ZnO particles in even size of 200-300 nm. The strong and sharp emission at 391 nm and several weak emissions at the wavelength band of 440-500 nm indicate the high optical quality and the stoichiometrical nature of obtained film. Mechanism analysis shows that the reaction duration in hot water and the drying process are vital important factors affecting the deposition process and the crystallization behavior of the film prepared via the aqueous solution route.     

动态磁涂覆混合纳米固定相毛细管电色谱中芳香酸的输运特征研究

推导了芳香酸在动态磁涂覆混合纳米固定相开管毛细管柱中等度洗脱和二元台阶梯度洗脱条件下的输运方程, 考察了其在该色谱柱上的保留特征. 结果表明, 等度洗脱时, 电渗流方向及大小随着两种固定相配比的改变而改变, 溶质的容量因子与弱阴离子交换固定相和反相固定相比例(Fe₃O₄@SiO₂-NH₂︰Fe₃O₄@SiO₂-C₁₈)之间具有良好的线性关系, 拟合后相关系数大于0.9166. 二元台阶梯度洗脱条件下, 溶质的迁移时间可以通过其在等度洗脱条件下的洗脱时间加以预测. 溶质在经磷酸缓冲液浓度、有机调节剂浓度和pH值台阶梯度洗脱后, 其预测保留时间和实际保留时间之间的相对误差分别小于8.0%, 10%和5.8%. 构建的系统在优化的色谱条件下对水提天麻进行了分离, 其主要成分柠檬酸的保留时间预测值与实际值之间相对误差为11%.     

Piezoelectricity of ZnO Films Prepared by Sol-Gel Method

"ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coeocient d33 was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coeocient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coeocient d33 changes little and ultimately keeps constant at a low frequency."     

Growth and characterization of Cl-doped ZnO hexagonal nanodisks

Cl-doped ZnO nanodisks were grown on a Si(111) substrate using a thermal evaporation method. The prepared nanodisks exhibited a hexagonal shape with an average thickness of 50 nm and average diagonal of 270 nm. In addition, undoped ZnO disks with hexagonal shape were grown under the same conditions, but the sizes of these undoped ZnO disks were on the micrometer order. A possible mechanism was proposed for the growth of the Cl-doped ZnO nanodisks, and it was shown that the Cl¹⁻ anions play a crucial role in controlling the size. X-ray diffraction and Raman spectroscopy clearly showed an extension in the crystal lattice of ZnO because of the presence of chlorine. In addition, these nanodisks produced a strong photoluminescence emission peak in the ultraviolet (UV) region and a weak peak in the green region of the electromagnetic spectrum. Furthermore, the UV peak of the Cl-doped ZnO nanodisks was blueshifted with respect to that of the undoped ZnO disks.     

Preparation and Photoluminescence of ZnO Nanorods Arrays

A high-density well-aligned Zinc Oxide nanorod array was synthesized on Si (100) substrate by a simplevapor deposition under normal pressure using neither a catalyst and nor pre-deposition of ZnO film. Various different morphologies were obtained in different deposition regions. Si substrate put over the Zn source was the key factor in getting a well-aligned sample. Field emission scanning electron microscope (FESEM) observations and X-ray diffraction were carried out to characterize the surface morphology and crystalline quality of the samples. The growth mechanism is discussed. The photoluminescence properties of the ZnO samples were also investigated. It is suggested that the green band is related to oxygen vacancies and thekinetic process involving transition from shallow donor to deep acceptor level.     

Characterization and Wettability of ZnO Film Prepared by Chemical Etching Method

ZnO thin films were prepared by a chemical etching method and their wettability was investigated. The structure and surface composition structure were characterized by means of scanning electron microscopy, X-ray photoelectronic spectrometry(XPS), X-ray diffraction(XRD) and Raman spectrometry. These analyses reveal that the etched films were large-scale micro-nanohierarchical structures composed of a Zn core and a ZnO coating. Superhydrophobic surfaces with water contact angles of over 150o were obtained by n-octadecanethiol(ODT) modification. The XPS and Raman results indicate that ODT molecules were bound to the ZnO surface with the S head group by forming Zn-S bond.     

电沉积制备ZnO纳米棒修饰电极上氧化还原蛋白的电化学行为

采用恒电位阴极还原法在金电极表面一步修饰ZnO纳米棒, 制备成ZnO纳米棒修饰电极. 扫描电子显微镜(SEM)和X射线衍射(XRD)结果显示制得的ZnO为直径约100 nm的六棱柱状纤锌矿晶体纳米棒. 使用ZnO纳米棒修饰的金电极研究细胞色素c的直接电化学行为, 结果表明: ZnO纳米棒修饰的金电极能有效探测到细胞色素c的铁卟啉辅基在不同价态下的电化学行为; 细胞色素c吸附后, ZnO纳米棒修饰的金电极对过氧化氢的电流响应呈现良好的线性关系.