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1.
The reaction of sulfur, carbon disulfide, and enamines at room temperature leads mainly or exclusively to 3H-1,2-dithiole-3-thiones; these are occasionally accompanied by 2H-1,3-dithiole-2-thiones, which can also be prepared by a modified procedure. Many enamines react with sulfur at room temperature to form thioamides. At about 50°C, enamines of acetophenone give 2-benzylidene-4-phenyl-2H-1,3-dithiol. The action of isothiocyanates and sulfur on enamines leads to the formation of thiazolidine-2-thiones. 2H-Thiopyran-2-thiones can be prepaAred from enamines or dienamines with carbon disulfide at room temperature. The reaction of ketimines (Schiff bases) with carbon disulfide and sulfur yields 3H-1,2-dithiole-3-thiones or isothiazoline-5-thiones. The reaction of alkynes with sulfur and carbon disulfide leads to 2H-1,3-dithiole-2-thiones. Nitriles containing active methylene groups react with carbon disulfide and sulfur to form 5-amino-3H-1,2-dithiole-3-thiones. When isothiocyanates are used instead of CS2, the reaction leads to δ4-4-amino-thiazoline-2-thiones.  相似文献   

2.
Recent investigations on sulfur hexafluoride decomposition have shown the need of a rapid and efficient method for the qualitative and quantitative analysis of the reaction products. An analytical method for characterizing the gas mixture obtained from the decomposition of sulfur hexafluoride in a quartz reactor submitted to an r.f. discharge, is presented. A combination of gas-chromatographic, mass spectrometric and infrared spectrophotometric techniques has shown the presence of SF6, SO2F2, SOF4, SOF2, SiF4 and F2 in the gas mixtures examined. For quantitative purposes a gas-chromatographic method has been found to be most suitable.  相似文献   

3.
In the extraction of spiked PCB from soil, three extracting fluids were investigated: supercritical carbon dioxide (CO2), supercritical sulfur hexafluoride (SF6) and subcritical water. Among the tested fluids SF6 appeared to be appropriate especially for the extraction of low polar PCB. CO2 and water were found to be suitable for the quantitative extraction of all PCB. Water was judged as the best because of its low price, good availability and environmental safety.  相似文献   

4.
Plasma-treated carbon thin films are investigated as counter electrodes for dye-sensitized solar cells. The films were grown onto fluorine-doped tin oxide (FTO) substrates by magnetron sputtering using pure graphite target and argon atmosphere and subsequently annealed at 600 °C for 30 min in vacuum. These films were then submitted to a plasma texturing process in a reactive ion etching reactor using three different gas combinations: sulfur hexafluoride/argon (SF6 + Ar), sulfur hexafluoride/hydrogen (SF6 + H2), and sulfur hexafluoride/oxygen (SF6 + O2). The morphology and structure of the obtained films were characterized by scanning electron microscopy and Raman spectroscopy. Cyclic voltammetry technique allowed accessing the improvements in their catalytic properties, while the photocurrent-voltage curves under simulated solar illumination AM 1.5G (100 mW/cm2) evaluated the performance of the respective assembled solar cells. The results show that photovoltaic performance is significantly affected by the different plasma texturing conditions used. The carbon counter electrode obtained after SF6 + O2 plasma texturing achieved the best power conversion efficiency of 2.23%, which is comparable to the 2.31% obtained using the commercial platinum counter electrode.
Graphical abstract Reactive Ion Etching reactor for plasma texturing process of carbon thin films
  相似文献   

5.
Sulfur hexafluoride (SF6) is considered as a potent greenhouse gas, whose effective degradation is challenging. Here we report a computational study on the nucleophilic activation of sulfur hexafluoride by N-heterocyclic carbenes and N-heterocyclic olefins. The result shows that the activation of SF6 is both thermodynamically and kinetically favorable at mild condition using NHOs with fluoro-substituted azolium and sulfur pentafluoride anion being formed. The Gibbs free energy barrier during the activation of SF6 has a linear relationship with the energy of HOMO of substrates, which could be a guideline for applying those compounds that feature higher energy in HOMO to activate SF6 in high efficiency.  相似文献   

6.
The gas-phase reaction of diethyl disulfide hydrogenation at atmospheric pressure in the presence of supported transition metal sulfides was studied. The reaction of diethyl disulfide with hydrogen at T = 200°C resulted in ethanethiol, and the selectivity to ethanethiol was no lower than 94%. The selectivity decreased at a higher temperature because of diethyl disulfide decomposition to ethylene and hydrogen sulfide. The reaction of diethyl disulfide in the presence of hydrogen occurred at a higher rate and selectivity than that in an atmosphere of helium. The activity of metal sulfides supported on aluminum oxide was higher than on the other studied supports—aluminosilicate, silica gel, and a carbon support. Metal sulfides supported on Al2O3 were arranged in the following order according to their activity: Rh > Ru > Mo Pd > Ni > W. Bimetallic catalysts were less active than monometallic catalysts. The activity of catalysts increased with the sulfide sulfur content; the partial reduction of metal sulfides also increased the catalytic activity.  相似文献   

7.
Soluble sulfur (S8) and insoluble sulfur (IS) have different application fields, and molecular dynamics simulation can reveal their differences in solubility in solvents. It is found that in the simulated carbon disulfide (CS2) solvent, soluble sulfur in the form of clusters mainly promotes the dissolution of clusters through van der Waals interaction between solvent molecules (CS2) and S8, and the solubility gradually increases with the increase in temperature. However, the strong interaction between polymer chains of insoluble sulfur in the form of polymer hinders the diffusion of IS into CS2 solvent, which is not conducive to high-temperature dissolution. The simulated solubility parameter shows that the solubility parameter of soluble sulfur is closer to that of the solvent, which is consistent with the above explanation that soluble sulfur is easy to dissolve.  相似文献   

8.
The stannylene {2-[(CH3)2NCH2]C6H4}2Sn (1) was reacted with oxygen, sulfur, selenium, tellurium, and carbon disulfide. The reactions with heavier chalcogens led to the rapid formation of 1:1 dinuclear adducts which were characterized by elemental analysis, ESI-MS measurements, 1H NMR spectroscopy, and structurally characterized by X-ray diffraction (in the case of reaction products with S8 (3) and Te (5)). The reaction of 1 with carbon disulfide and elemental sulfur yields the remarkable compound {{2-[(CH3)2NCH2]2C6H4}Sn}22-S2CCS2) (3a). The stability and reactivity of compounds 1-5 were rationalized at DFT/TZ2P level.  相似文献   

9.
Reaction of dialkyl diselenides R2Se2 (R = Me, n-Bu) with sulfur at room temperature in the presence of the catalytic system DMSO-Na2S·9H2O-triethylbenzylammonium chloride, as well as at 55-60°C in the presence or in the absence of catalysts leads to the insertion of from one to six atoms of sulfur into the Se-Se bond. Bis(methylseleno) polysulfides MeSeSnSeMe with n = 5-6 gradually liberate sulfur on keeping. Dibutyl diselenide is less active than dimethyl diselenide, and diphenyl diselenide does not react with sulfur in boiling carbon disulfide. At 55-60°C a small portion of selenium in dialkyl diselenides passes into unreacted sulfur which is indicative of cleavage of the C-Se bonds in bis(methylseleno) polysulfides.  相似文献   

10.
Results of the formation of copper sulfide layers using the solutions of elemental sulfur in carbon disulfide as precursor for sulfurization are presented. Low density polyethylene film can be effectively sulfurized in the solutions of rhombic (α) sulfur in carbon disulfide. The concentration of sulfur in polyethylene increases with the increase of the temperature and concentration of sulfur solution in carbon disulfide and it little depends on the duration of sulfurization. Electrically conductive copper sulfide layers on polyethylene film were formed when sulfurized polyethylene was treated with the solution of copper (II/I) salts. CuxS layer with the lowest sheet resistance (11.2 Ω cm−2) was formed when sulfurized polyethylene was treated with copper salts solution at 80°C. All samples with formed CuxS layers were characterized by X-ray photoelectron spectroscopy. XPS analysis of obtained layers showed that on the layer’s surface and in the etched surface various compounds of copper, sulfur and oxygen are present: Cu2S, CuS, CuO, S8, CuSO4, Cu(OH)2 and water. The biggest amounts of CuSO4 and Cu(OH)2 are present on the layer’s surface. Significantly more copper sulfides are found in the etched layers.  相似文献   

11.
In the combustion of carbon disulfide, the direct substitution reaction O + CS2 = OCS + S (I) was found to be the main source of atomic sulfur, which is responsible for the branching of reaction chains. As distinct from the reactions of intermediate products with each other, step (I), which is a first-order reaction with respect to the concentration of chain carriers, together with an act of multiplication of active species, is responsible for not only flame propagation but also critical self-ignition conditions.  相似文献   

12.
The synthesis of COS from CO, CO2 and liquid sulfur in the presence and absence of hydrogen was explored. The reaction of H2 with liquid sulfur produced H2S and polysulfanes, which increase the reactivity of liquid sulfur and provide alternative complementary reaction routes for the formation of COS. The reaction from CO2 proceeds by forming CO as intermediate. Elevated pressure favors formation of COS from both carbon oxides due to the increasing residence time and the saturation of gases in the liquid. Above 350 °C, the solubility of H2S in sulfur and the hydrogenation of COS limit the conversion of CO. The approach provides a highly efficient method for the preparation of COS under mild reaction conditions, without using a catalyst or water adsorbents.  相似文献   

13.
Liquid xenon difluoride at 140°C does not react with zirconium or hafnium tetrafluorides, neither does liquid xenon hexafluoride at 60°C. Therefore reactions between the corresponding hydrazinium fluorometalates or ammonium fluorometalates and xenon difluoride and xenon hexafluoride, respectively, were carried out. N2H6ZrF6 and N2H6HfF6 react with xenon difluoride at 60°C again yielding only the corresponding tetrafluorides, while the analogous reaction with (NH4)2ZrF6 and (NH4)2HfF6 proceeds at 170°C yielding the corresponding ammonium pentafluorometalates, which are stable and do not react further with excessive xenon difluoride up to 200°C.The reaction between N2H6ZrF6 or N2H6HfF6 and xenon hexafluoride proceeds at room temperature yielding a series of thermally unstable compounds of the type mXeF6.MF4 (M = Zr, Hf) where m ? 6. The final products which are stable at room temperature are XeF6.MF4 (M = Zr,Hf). Spectroscopic evidence suggests that these compounds are salts of a XeF+5 cation squashed between a polymeric anion of the type (MF5)x-x.  相似文献   

14.
通过监测六氟化硫(SF6)气体的变化发现高压变电站系统中设备的异常. 气体绝缘开关设备(GIS)中的高压开关、电闸及其它各种设备因接触不良、电阻值增加、发热、融解、拉弧、连续拉弧等原因会造成设备短路. 因保护这些电器的SF6气体不可能非常纯净,如存在H2O. 在上述这些故障发生时变成催化条件,使SF6与H2O作用后生成氟化氢气体. 通过监测氟化氢气体的突发变化,可以预警GIS系统设备可能出现的故障.  相似文献   

15.
The reactions of b- and f-face cyclohexene-annulated 3a,6a-diaza-1,4-diphosphapentalene (CADDP) with elemental sulfur and selenium result in the addition of two chalcogen atoms to one phosphorus atom of CADDP. A specific feature of these structures is that the diazadiphosphapentalene skeleton retains planar geometry, with a significant elongation of the N—P bond. These compounds are zwitterions, as evidenced by their electronic structures, with considerable delocalization of the negative charge in the PS2 (PSe2) moieties and of the positive charge in the diazaphosphole ring. The reaction of CADDP with carbon disulfide is a more complicated process accompanied by the decomposition of the CS2 molecule to form a molecule containing three structurally different CADDP moieties, one of which is a stabilized carbene complex.  相似文献   

16.
Summary: The laser irradiation at 193 nm of a gaseous mixture of carbon disulfide and ethene induces the copolymerization of both compounds and affords the chemical vapour deposition of a C/S/H polymer, the composition of which indicates the reaction between two to three CS2 molecules and one C2H4 molecule. Polymer structure is interpreted on the basis of X‐ray photoelectron and FT‐IR spectra as consisting of >CS, >CC<,  CH2 CH2 , (CC)SnC4 − n,  C (CS) S ,  S (CS) S , and C S S C configurations. The gas‐phase copolymerization of carbon disulfide and ethene represents the first example of such a reaction between carbon disulfide and a common monomer.

Scheme showing the expected reaction of excited CS2 molecules with other CS2 molecules to form dimers, which then react with another CS2 molecule or add to ethene.  相似文献   


17.
The greenhouse gas sulfur hexafluoride is the common standard example in the literature of a very inert inorganic small molecule that is even stable against O2 in an electric discharge. However, a reduced β‐diketiminate nickel species proved to be capable of converting SF6 into sulfide and fluoride compounds at ambient standard conditions. The fluoride product complex features an unprecedented [NiF]+ unit, where the Ni atom is only three‐coordinate, while the sulfide product exhibits a rare almost linear [Ni(μ‐S)Ni]2+ moiety. The reaction was monitored applying 1H NMR, IR and EPR spectroscopic techniques resulting in the identification of an intermediate nickel complex that gave insight into the mechanism of the eight‐electron reduction of SF6.  相似文献   

18.
In this present study, polyethersulfone hollow fiber membrane was used to recover sulfur hexafluoride (SF6) from gas‐insulated switchgear (GIS). SF6, N2 pure gas and mixed gas (12.5 vol.% of SF6) experiment was initiated to observe permeation behavior according to temperature and pressure difference and retentate flow rate. Scanning electron microscopy was used to investigate the morphological characteristics and the structure of asymmetric hollow fibers. The permeation rates of SF6 and N2 were measured by the variable pressure method. As a result, permeance of N2 was 9.5–16.3 GPU, and selectivity of N2/SF6 was 10.5–13.3. Moreover, the concentration of SF6 in the retentate stream reached to 99.2% by the control of the operating condition. Based on the experimental results, tree‐stage membrane process was designed using simulation program. As a result, demanded membrane area reduced about 74% according to operating condition difference. Copyright © 2013 John Wiley & Sons, Ltd.  相似文献   

19.
On Chalcogenolates. 81. Studies on N-Hydroxy Dithiocarbamic Acid. 3- Esters of N-Hydroxy Dithiocarbimic Acid and Dithiocarbamic Acid The reaction between hydroxylamine, carbon disulfide, and alkyl halide leads to the corresponding ester of N-hydroxy dithiocarbimic acid HO? N?C(SR)2 with R = CH3, C2H5; R2 = ? CH2? CH2? . The phenyl ester of N-hydroxy dithiocarbamic acid HO? NH? CS(SC6H5) has been prepared by reaction of hydroxylammonium chloride with the phenyl ester of chlorodithioformic acid. N-Methyl hydroxylammonium chloride reacts with carbon disulfide and alkyl iodide to form the corresponding ester of the dithiocarbamic acid HO? N(CH3)? CS(SR) with R = CH3, C2H5. The unstable compounds have been characterized by different methods.  相似文献   

20.
The Me‐cAAC:‐stabilized dimer of silicon disulfide (SiS2) has been isolated in the molecular form as (Me‐cAAC:)2Si2S4 ( 2 ) at room temperature [Me‐cAAC:=cyclic alkyl(amino) carbene]. Compound 2 has been synthesized from the reaction of (Me‐cAAC:)2Si2 with elemental sulfur in a 1:4 molar ratio under oxidative addition. This is the smallest molecular unit of silicon disulfide characterized by X‐ray crystallography, electron ionization mass spectrometry, and NMR spectroscopy. Structures with three sulfur atoms arranged around a silicon atom are known; however, 2 is the first structurally characterized silicon–sulfur compound containing one terminal and two bridging sulfur atoms at each silicon atom. Compound 2 shows no decomposition after storing for three months in an inert atmosphere at ambient temperature. The bonding of 2 has been further studied by theoretical calculations.  相似文献   

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