Some photoelectric properties of the nucleic acid bases in thin layers

The current-voltage characteristics of dark-conductivity and photoconductivity, the lux-ampere characteristics, the spectral dependence of photoconductivity and the relative quantum efficiency of vacuum deposited layers of adenine, thymine, uracil and cytosine were investigated at room temperature. The following values of photoconductivity thresholdE _th were obtained: 3·81 ±± 0·1 eV for adenine; 3·69±0·1 eV for thymine; 3·80±0·1 eV for uracil; 3·77 ± 0·1 eV for cytosine.It may be shown thatE _th is most probably the threshold value for intrinsic photoconductivity of NA bases and, consequently, corresponds to the first electron conductivity levelE _c or at leastE _c >E_th. The possible energy diagram of the NA bases is evaluated.     

The Optical Spectra of the Arsenic Triselenide Crystal in the Range from 1 to 10 eV

Full complexes of fundamental optical functions of the As₂Se₃ single crystal in the region from 1 to 10 eV are calculated at 10 K (1–5.5 eV) and 77 K (5.5–10 eV) for three light polarizations (E a, E b, and E c). Their main characteristic features are established. The experimental reflection spectra and the spectra of other optical functions calculated on their basis are compared with the known literature data.     

Inequalities for the Schattenp-norm. III

We present some inequalities for the Schattenp-norm of operators on a Hilbert space. It is shown, among other things, that ifA is an operator such that ReAa0, then for any operatorX, AX+XA* _p 2aX _p . Also, for any two operatorsA andB, A–B ₂ ² +A*B* ₂ ² 2A–B ₂ ² .     

Free carrier scattering mechanism in Bi2Se3 crystals

The single valley model proposed byKöhler andLandwehr is used for the calculation of transport parameters corresponding to pure Bi₂Se₃ crystals. From the measurements of transmission, reflectivity and the Hall constant the effective masses are determined,m _c =0·13m ₀ andm _c=0·56m ₀; using a simplification described in the paper the Fermi level is calculated to lie 0·14 eV above the bottom of the conduction band. This result allows us to conclude that a mixed mechanism of free carrier scattering exists inn-Bi₂Se₃ crystals, viz., the scattering by acoustic phonons prevails contributing about 75% and the scattering on ionized impurities contributes the remaining 25%. This result applies to pure Bi₂Se₃ crystals with free electron concentration 2×10¹⁹cm^–3.     

Optical and photoelectric properties of GeSe in the energy range 0·5–1·5 eV

It is possible to deduce from the optical and photoelectric measurements of a GeSe single crystal that the absorption of light near the absorption edge corresponds to the indirect forbidden transitions as may be proved by the dependenceK (E-E _i )³. The energy gap isE _g= =(1·10±0·02) eV at room temperature and does not depend on the crystal orientation. The photoconductivity of a GeSe single crystal is relatively high. The interpretation of the photoconductivity measurements confirms the conclusions drawn from optical measurements. The paper is dedicated to the memory of Dr. A. Vaíek, Professor of the J. E. Purkyn University in Brno, who died on November 16, 1966.In conclusion the author would like to express his gratitude to Dr. F. Kosek from the Technical University in Pardubice for the GeSe single crystals and to Dr. J. Kubna from the Department of Solid State Physics, Faculty of Science, Purkyn University in Brno, for the X-ray analysis of the crystals.     

Fermion masses

In this paper, we show that 2m _e m /(m _e ² +m ² = (g _V/g _A) _e ² . From this expression, the Weinberg mixing parameter is shown to be 0·2254 or 0·2746. Assuming that the electron and muon neutrino masses are degenerate, we find thatm _v = (g _V/g _A) _e ² . (m _e m )/M _WL, where M_WL is the mass of the standard W^± boson. The neutrino mass turns out to be 6·5 eV. The -neutrino mass is found to be about 81 MeV. The masses of c, t, s and b quarks are found to be respectively 1·7 GeV, 21·2 GeV, 0·57 GeV and 2·18 GeV by assumingm _d=m _u= 0·3 GeV. All these masses agree with other estimates except the b quark which has about half of its expected value.     

Influence of the overall pressure on electrical conductivity of the amorphous semiconductor Ge15Te81S2As2

The experimental results obtained with the chalcogenide glass Ge₁₅Te₈₁S₂As₂ with imposed overall pressure up to 700 MPa are presented. The material exhibits the switching effect and the memory effect. It is shown that the overall pressure changes remarkably d.c. electrical conductivity of the amorphous semiconductor. It is assumed that the changes in conductivity are caused by changes in activation energy. The changes in activation energy within the range of considered pressures are, as follows from our measurements, E/p–10·95×10^–5 eV/MPa +p × 10·41 W 10^–7 eV/MPa². The assumption of the activation energy dependence on pressurep are confirmed also by measurements of dependence In vs. 1/T at various pressures.     

Nelson's symmetry and the infinite volume behavior of the vacuum inP(φ)2

LetH _l be the Hamiltonian in aP()₂ theory with sharp space cutoff in the interval (–l/2,l/2). LetE _l =inf(H _l ), (l)=–E _l /l, and let _l be the vacuum forH _l . discuss properties of (l) and _l . In particular, asl, there are finite constants <0 and such that (l), ((l)–)l, and hence (l)=+/l+o(l ^–1). Moreover exp(–c ₁ l) _{l 1}exp(–c ₂ l) forc ₁,c ₂ positive constants, where _{l 1} is theL ¹(Q, d₀) norm of ₁ with respect to the Fock vacuum measure. We also present a new proof of recent estimates of Glimm and Jaffe on local perturbations ofH _l in the infinite volume limit.Research sponsored by AFOSR under Contract No. F44620-71-C-0108.On leave from Istituto di Fisica Teorica, Universitá di Napoli and Istituto Nazionale di Fisica Nucleare, Sezione di Napoli.A. Sloan Foundation Fellow.     

Energy dependence of the fast fragment of the target nucleus in high energy hadron-nucleus interaction

This paper presents an extensive study on the dependence of the mean number of the fast fragment of the target nucleus n _g on the incident beam energy in proton-nucleus interaction in emulsion in the range 6·2E ₀400 GeV/c. It has been observed that n _g decreases in the range 6·2E ₀200 GeV/c, then increases and attains an approximately steady value up to 400 GeV/c. It is very difficult to explain this behaviour with the help of the existing nuclear production models.The author would like to thank Prof A. J. Herz (CERN), Prof. K. D. Tolostov (Dubna, U.S.S.R.), Prof. P. L. Jain (State University of New York, U.S.A.), Prof. G. Giacomelly (Italy) for kindly supplying the exposed emulsion plates.     

Instability in degenerate two-photon running wave laser with detuning

The previous stability analysis of the degenerate two-photon running wave laser is extended to the inclusion of detuning between frequencies of cavity and atoms. We derive the analytical equation for the critical pumping and prove analytically that for the special case ofr (/) being unity, there is no Hopf bifurcation instability for the bad cavity. The good cavity case is analysed numerically. The role played by detuning is to raise the critical pumping. In the case ofk (or <K) where there is no Hopf bifurcation instability for the perfect tuning case, the large detuning can give rise to self-pulsing instability.     

Renormalization group equations with several length scales and crossover scaling functions for axial anisotropy

The critical behaviour of axially anisotropicn-vector models is characterized by two distinct length scales, the correlation lengths and for the easy and hard axes. In order to handle the full range of anisotropics from to partial differential renormalization group equations are derived, depending on and . The anisotropicX-Y model is studied in detail near four dimensions. The crossover scaling functions for the susceptibilities are calculated to first order in=4–d. Two distinct crossover regions are found for weak and dominant anisotropy, respectively.     

Three-photon absorption and its limitation of third-order nonlinear optical effects in rutile

Three-photon absorption and three-photon-induced excited-state absorption of rutile are studied by transmission measurements using picosecond pulses of a mode-locked Nd: glass laser. The nonlinear absorption limits efficient stimulated Raman scattering. It reduces the efficiency of two-photon absorption of a picosecond probe continuum. Three-photon absorption coefficients, excited-state absorption cross sections, a Raman gain factor, and two-photon absorption cross-section spectra are determined. The arrangementsEc andE c are considered.     

Image-potential surface states on Ag(100): A reinvestigation

Employing inverse photoemission we have remeasured the energy dispersionE(k) of the lowest-lying image state on Ag(100) with improved energy resolution (electrons and photons, E=0.35 eV) andk-resolution (k<0.1 Å^–1). In a least-square fit with the binding energyE _B atk=0 and the effective massm ^* as parameters we obtainE _B =E _vac –0.67 eV andm ^*=1.5 m in agreement with our earlier findings but differing from the two-photon photoemission values (0.53 eV and 1.15 m).     

Influence of annealing on the conductivity and photoconductivity of p-type CdTe

On annealing p-type CdTe, considerable change in conductivity takes place. Samples of high resistivity were used for the measurements. Each of a set of samples was annealed at different temperature. After annealing, the temperature dependence of the conductivity and the relaxation curves of the photoconductivity were measured. Analysis of the first set of curves yielded value of energyE _a corresponding to the level occurring in given samples. It was established that this acceptor level is due to V^cd, or V^cd complexes, and is situated at 0.3 eV above the valence band edge. Concentration of these levels is increased by annealing. Furthermore, an energy value ofH=0.79 eV was found, corresponding very probably to the formation energy of a vacancy V^cd.Analysis of the relaxation curves yielded the temperature dependence of _S , _T and the energy distanceE _M of the impurity level that is responsible for photoconductivity. A value of (E _g -E _M )=0.09–0.12 eV was found for all samples studied. This level therefore lies below the conduction band edge and its concentration amounts to 10¹⁴–10¹⁵ cm^–3. The level is probably due to foreign impurities.Two sets of samples were used: both as-grown and Sb-doped. The results for both sets were not much different from each other.Ke Karlovu 3, Praha 2, Czechoslovakia.     

Amorphous semiconducting AsSeI

It is shown on the basis of differential thermal analysis (DTA) of AsSeI samples that a reliable technique ensuring reproducible preparation of vitreous AsSeI has been found. The values of the softening and melting points are 50 °C and 220 °C, respectively.Transmittance study has been done on glasses of general compositionxAs₂Se₃+(1–x). AsSeI (forx=1.0; 0.8; 0.4; 0.0). Samples in the form of slabs of different thickness (d=0.2; 0.5; 1.0; 2.0 mm) were used to determine the wavelength dependence of the absorption coefficientK. On the basis of the results of the quoted measurements performed on thin As₂Se₃ layers in the high absorption region, the optical gap width of vitreous semiconducting AsSeI has been extrapolated, using certain simplified conceptions mentioned in the paper. The value ofE _g at 293 °K and its temperature dependence coefficient=(E _g/T)_p for AsSeI were found to be 1.91 eV and –6.7×10^–4eV/grad, respectively.     

Heterodiffusion of Cr in molten Fe in the temperature range 1800 to 1970 K

Heterodiffusion of Cr has been studied using the method of thin layer and the radionuclide⁵¹Cr. The diffusion characteristics determined from the experimental results in the temperature range 1800 KT1970 K areD _o=1·59×10^–2 cm²/s andE=22·3±1·6 kcal/mol. The experimental method is discussed in detail and the results are compared with those of other authors.     

Light scattering studies of crossover to a liquid crystal tricritical point

We have used light scattering to study nematic elastic constantsK ₂ andK ₃ in the alkyl-cyanobiphenyl (n CB) system. As the average alkyl chain lengthn increases, the temperature range of the nematic phase decreases and the system approaches a tricritical point. Our data are analyzed to determine the parallel and perpendicular correlation lengths and critical exponents for smectic short-range order. We find a continuous decrease in the critical exponentsv andv as the tricritical point, which occurs at 9.1 CB, is approached. There is also a significant decrease in the magnitude of the parallel correlation length at a fixed reduced temperature.     

Fine Structure of the Optical Spectra of Bismuth Triiodide

Full sets of the optical functions of a BiI₃ crystal in the range 1–5 eV have been calculated from the experimental spectra ₁(E) and ₂(E) for the polarizations E c and E c at 300 K. The spectra of permittivity and volumetric characteristic losses have been decomposed into elementary components and their main parameters have been determined. A schematic representation of the nature of the basic maxima of transitions on the basis of the well-known theoretical calculations of the bands and spectra of reflection of the BiI₃ crystal has been suggested.     

EPR and Thermoluminescence in ZnO Single Crystals with Anionic Vacancies

The radiation defects created in hydrothermal ZnO–Li single crystals by irradiating them with electrons, protons, and highenergy ions have been investigated. The anionic vacancies (Fcenters) in ZnO are established to be the centers of radiationless recombination of the charge carriers with a photoionization energy of 2.3 eV (a signal of the photoEPR with the gfactor for the F⁺center: g = 1.9948 and g = 1.9963). The anionic vacancies in the form of the F and F⁺ states are a good reference of the electron and hole processes. The [F_Li]^×centers that correspond to the oxygen vacancies localized near the point defects Li_Zn are detected. In the temperature range 530–660 K, ZnO crystals display thermally stimulated processes such as the healing of anionic vacancies (530–630 K) and the disappearance of the [F_Li]^×centers (610–660 K).     

The electrical performance of thinn +-window layers ina-Si: H solar cells

The electrical properties ofn ⁺-window layers inp-i-n a-Si:H solar cells were characterised as a function ofn ⁺-layer thickness, , by measuring firstly the activation energyE _a of the dark conductivity and secondly the built-in potentialV _bi of the cells.E _a was found to increase with decreasing attaining values as high as 0.8 eV for 5nm; bulk values, e.g.E _a . 2eV in the amorphous andE _a<0.01 eV in the microcrystalline case, were only observed for >20nm and for >200nm, respectively. In contrast,V _bi did not depend on at all and was further found to be consistent with expectations based on the Fermi level positions in bulkn ⁺ andp ⁺-material. As a consequenceE _a in very thin films can no longer be considered as a measure of (E _C –E _F), the distance of the Fermi level from the conduction band edge. The apparent inconsistency inherent to theE _a and theV _bi results can be resolved by assuming that the deposition of then ⁺-material proceeds via the growth and coalescence of small islands.