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1.
Chunjie Yan 《中国物理 B》2023,32(1):17503-017503
We systematically investigated the Ni and Co thickness-dependent perpendicular magnetic anisotropy (PMA) coefficient, magnetic domain structures, and magnetization dynamics of Pt(5 nm)/[Co($t_{\rm Co}$)/Ni($t_{\rm Ni}$)]$_{5}$/Pt(1 nm) multilayers by combining the four standard magnetic characterization techniques. The magnetic-related hysteresis loops obtained from the field-dependent magnetization $M$ and anomalous Hall resistivity (AHR) $\rho_{{xy}}$ showed that the two serial multilayers with $t_{\rm Co} = 0.2$ nm and 0.3 nm have the optimum PMA coefficient $K_{\rm U}$ as well as the highest coercivity $H_{\rm C}$ at the Ni thickness $t_{\rm Ni}= 0.6 $ nm. Additionally, the magnetic domain structures obtained by magneto-optic Kerr effect (MOKE) microscopy also significantly depend on the thickness and $K_{\rm U}$ of the films. Furthermore, the thickness-dependent linewidth of ferromagnetic resonance is inversely proportional to $K_{\rm U}$ and $H_{\rm C}$, indicating that inhomogeneous magnetic properties dominate the linewidth. However, the intrinsic Gilbert damping constant determined by a linear fitting of the frequency-dependent linewidth does not depend on the Ni thickness and $K_{\rm U}$. Our results could help promote the PMA [Co/Ni] multilayer applications in various spintronic and spin-orbitronic devices.  相似文献   

2.
Microstructure, static magnetic properties and microwave permeability of sputtered FeCo films were examined. Fe60Co40 films (100 nm in thickness) deposited on glass substrates exhibited in-plane isotropy and a large coercivity of 161.1 Oe. When same thickness films were deposited on 2.5 nm Co underlayer, well-defined in-plane anisotropy was formed with an anisotropy field of 65 Oe. The sample had a static initial permeability of about 285, maximum imaginary permeability of 1255 and ferromagnetic resonance frequency of 2.71 GHz. Cross-sectional TEM image revealed that the Co underlayer had induced a columnar grain structure with grain diameter of 10 nm in the FeCo films. In comparison, FeCo films without Co underlayer showed larger grains of 70 nm in diameter with fewer distinct vertical grain boundaries. In addition, the Co underlayer changed the preferred orientation of the FeCo from (1 0 0) to (1 1 0). The improvement in soft magnetic properties and microwave behavior originates from the modification of the film microstructure, which can be well understood by the random anisotropy theory.  相似文献   

3.
刘银  丘泰 《中国物理》2007,16(12):3837-3842
Nanocrystalline Ni0.5Zn0.5 ferrite with average grain sizes ranging from 10 to 100 nm is prepared by using a spraying-coprecipitation method. The results indicate that the nanocrystalline Ni0.5Zn0.5 ferrite is ferromagnetic without the superparamagnetic phenomenon observed at room temperature. Specific saturation magnetization of nanocrystalline Nio.sZno.5 ferrite increases from 40.2 to 75.6 emu/g as grain size increases from 11 to 94nm. Coercivity of nanocrystalline Ni0.5Zn0.5 ferrite increases monotonically when d 〈 62 nm.The relationship between the coercivity and the mean grain size is well fitted into a relation Hc - d^3. A theoretically evaluated value of the critical grain size is 141nm larger than the experimental value 62nm for nanocrystalline Ni0.5Zn0.5 ferrite. The magnetic behaviour of nanocrystalline Ni0.5Zn0.5 ferrite may be explained by using the random anisotropy theory.  相似文献   

4.
Le Wang 《中国物理 B》2022,31(8):86201-086201
The antiferromagnetic (AFM) interlayer coupling effective field in a ferromagnetic/non-magnetic/ferromagnetic (FM/NM/FM) sandwich structure, as a driving force, can dramatically enhance the ferromagnetic resonance (FMR) frequency. Changing the non-magnetic spacer thickness is an effective way to control the interlayer coupling type and intensity, as well as the FMR frequency. In this study, FeCoB/Ru/FeCoB sandwich trilayers with Ru thickness ($t_{\rm Ru}$) ranging from 1 Å to 16 Å are prepared by a compositional gradient sputtering (CGS) method. It is revealed that a stress-induced anisotropy is present in the FeCoB films due to the B composition gradient in the samples. A $t_{\mathrm{Ru}}$-dependent oscillation of interlayer coupling from FM to AFM with two periods is observed. An AFM coupling occurs in a range of $2 {\rm Å} \le t_{\rm Ru} \le 8 {\rm Å}$ and over 16 $\mathrm{Å}$, while an FM coupling is present in a range of $t_{\rm Ru}< 2$ Å and $9 {\rm Å} \le t_{\rm Ru} \le 14.5 Å$. It is interesting that an ultrahigh optical mode (OM) FMR frequency in excess of 20 GHz is obtained in the sample with ${t}_{\mathrm{Ru}}= 2.5 \mathrm{Å}$ under an AFM coupling. The dynamic coupling mechanism in trilayers is simulated, and the corresponding coupling types at different values of $t_{\mathrm{Ru}}$ are verified by Layadi's rigid model. This study provides a controllable way to prepare and investigate the ultrahigh FMR films.  相似文献   

5.
Thin films of Nd_2Fe_{14}B were fabricated on heated glass substrates by dc magnetron sputtering. Different material underlayers (Ta, Mo, or W) were used to examine the underlayer influence on the structural and magnetic properties of the NdFeB films. Deposited on a Ta buffer layer at 420℃, the 300 nm thick NdFeB films were shown to be isotropic. But when the substrate temperature T_s was elevated to 520℃, the Nd_2Fe_{14}B crystallites of (00l) plane were epitaxially grown on Ta (110) underlayer. In contrast, Mo (110) buffer layer could not induce any preferential orientation in NdFeB film irrespective of the substrate temperature or film thickness. The W buffer layer was found to be most effective for the nucleation of Nd_2Fe_{14}B crystallites with c-axis alignment perpendicular to the film plane when T_s<490℃. But at T_s=490℃ the magnetic layer became isotropic. The maximum coercivity obtained was about 995 kA/m for the 100nm film deposited on W underlayer at 490℃. These variations were tentatively explained in terms of the lattice misfit between the underlayer and the magnetic layer, combined with the considerations of underlayer morphologies.  相似文献   

6.
敖琪  张瓦利  张熠  吴建生 《物理学报》2005,54(10):4889-4893
利用磁控溅射法制备了Nd28Fe66B6/Fe50Co50 双层纳米复合磁性薄膜,研究了其结构和磁性.经873K退火处理15min 后,利用x射线衍射仪测定薄膜晶体结构,采用俄歇电子能谱仪估算薄膜厚度和超导量子干 涉仪测量其磁性.磁性测量表明,1)该系列薄膜具有垂直于膜面的磁各向异性.从起始磁化曲 线和小回线的形状特征可知,矫顽力机制主要是由畴壁钉扎控制.2)对于固定厚度(10nm) 层的硬磁相Nd-Fe-B和不同厚度(dFeCo=1—100nm)层软磁相FeCo双层纳米复合 膜,剩磁随软磁相FeCo 厚度的增加快速增加,而矫顽力则减少.当dFeCo=5nm 时 ,最大磁能积达到160×10A/m.磁滞回线的单一硬磁相特征说明,硬磁相Nd -Fe-B层和软磁相FeCo层之间的相互作用使两相很好地耦合在一起.剩磁和磁能积的提高是由 于两相磁性交换耦合所致. 关键词: Nd-Fe-B/FeCo双层纳米复合膜 交换耦合 磁性增强  相似文献   

7.
High saturation magnetization soft magnetic FeCo (=Fe65Co35) films were prepared using a thin Co underlayer. The FeCo/Co films exhibited a well-defined in-plane uniaxial anisotropy with easy axis coercivity (Hce) of 10 Oe and hard axis coercivity (Hch) of 3 Oe, and a half reduction of Hc with Hce=4.8 Oe and Hch=1.0 Oe was obtained when the composition was adjusted to 25 at% Co. The effective permeability of the films remains flat around 250 to 800 MHz. The saturation magnetostriction was 5.2×10−5 and the intrinsic stress was 0.8 GPa in FeCo single layer, both were slightly reduced by Co underlayer. The Co underlayer changed the preferred orientation of the FeCo films from (2 0 0) to (1 1 0) but more significantly, reduced the average grain size from ∼74 to ∼8.2 nm. It also reduced the surface roughness from 2.351 to 0.751 nm. The initial stage and interface diffusion properties were examined by TEM and XPS.  相似文献   

8.
Wenqiang Wang 《中国物理 B》2022,31(9):97504-097504
We study inserting Co layer thickness-dependent spin transport and spin-orbit torques (SOTs) in the Pt/Co/Py trilayers by spin-torque ferromagnetic resonance. The interfacial perpendicular magnetic anisotropy (IPMA) energy density ($K_{\rm s}= 2.7 $ erg/cm$^{2}$, 1 erg = 10$^{-7}$ J), which is dominated by interfacial spin-orbit coupling (ISOC) in the Pt/Co interface, total effective spin-mixing conductance $(G_{\mathrm{eff,tot}}^{\mathrm{\uparrow \downarrow }}=\mathrm{0.42\times }{10}^{15} \mathrm{\Omega }^{-1}\cdot\mathrm{m}^{-2}$) and two-magnon scattering ($\beta_{\mathrm{TMS}}= 0.46 {\mathrm{nm}}^{2}$) are first characterized, and the damping-like torque ($\xi_{\mathrm{DL}}= 0.103$) and field-like torque ($\xi _{\mathrm{FL}}=-0.017$) efficiencies are also calculated quantitatively by varying the thickness of the inserting Co layer. The significant enhancement of $\xi_{\mathrm{DL}}$ and $\xi_{\mathrm{FL}}$ in Pt/Co/Py than Pt/Py bilayer system originates from the interfacial Rashba-Edelstein effect due to the strong ISOC between Co-3d and Pt-5d orbitals at the Pt/Co interface. Additionally, we find a considerable out-of-plane spin polarization SOT, which is ascribed to the spin anomalous Hall effect and possible spin precession effect due to IPMA-induced perpendicular magnetization at the Pt/Co interface. Our results demonstrate that the ISOC of the Pt/Co interface plays a vital role in spin transport and SOTs-generation. Our finds offer an alternative approach to improve the conventional SOTs efficiencies and generate unconventional SOTs with out-of-plane spin polarization to develop low power Pt-based spintronic via tailoring the Pt/FM interface.  相似文献   

9.
《中国物理 B》2021,30(5):57503-057503
We used the Jordan–Wigner transform and the invariant eigenoperator method to study the magnetic phase diagram and the magnetization curve of the spin-1/2 alternating ferrimagnetic diamond chain in an external magnetic field at finite temperature. The magnetization versus external magnetic field curve exhibits a 1/3 magnetization plateau at absolute zero and finite temperatures, and the width of the 1/3 magnetization plateau was modulated by tuning the temperature and the exchange interactions. Three critical magnetic field intensities H_(CB), H_(CE) and H_(CS) were obtained, in which the H_(CB) and H_(CE) correspond to the appearance and disappearance of the 1/3 magnetization plateau, respectively, and the higher H_(CS) correspond to the appearance of fully polarized magnetization plateau of the system. The energies of elementary excitation ωσ,k(σ = 1, 2, 3) present the extrema of zero at the three critical magnetic fields at 0 K, i.e., [hω_(3,k)(HCB)]_(min)= 0, [hω_(2,k)(H_(CE))]_(max)= 0 and [hω _(2,k)(H_(CS))]_(min)= 0, and the magnetic phase diagram of magnetic field versus different exchange interactions at 0 K was established by the above relationships. According to the relationships between the system's magnetization curve at finite temperatures and the critical magnetic field intensities, the magnetic field-temperature phase diagram was drawn. It was observed that if the magnetic phase diagram shows a three-phase critical point, which is intersected by the ferrimagnetic phase, the ferrimagnetic plateau phase, and the Luttinger liquid phase, the disappearance of the1/3 magnetization plateau would inevitably occur. However, the 1/3 magnetization plateau would not disappear without the three-phase critical point. The appearance of the 1/3 magnetization plateau in the low temperature region is the macroscopic manifestations of quantum effect.  相似文献   

10.
An iron film percolation system is fabricated by vapour-phase deposition on fracture surfaces of α-Al2O3 ceramics. The zero-field-cooled (ZFC) and field-cooled (FC) magnetization measurement reveals that the magnetic phase of the film samples evolve from a high-temperature ferromagnetic state to a low-temperature spin-glass-like state, which is also demonstrated by the temperature-dependent ac susceptibility of the iron films. The temperature dependence of the exchange bias field He of the iron film exhibits a minimum peak around the temperature T=5 K, which is independent of the magnitude of the cooling field Hcf. However, for T 〉 10K, (1) He is always negative when Hcf=2kOe and (2) for Hcf= 20 kOe (1Oe≈80 A/m), He changes from negative to positive values as T increases. Our experimental results show that the anomalous hysteresis properties mainly result from the oxide surfaces of the films with spin-glass-like phase.  相似文献   

11.
We report the constraints of $H_0$ obtained from Wilkinson Microwave Anisotropy Probe (WMAP) 9-year data combined with the latest baryonic acoustic oscillations (BAO) measurements. We use the BAO measurements from 6dF Galaxy Survey (6dFGS), the SDSS DR7 main galaxies sample (MGS), the BOSS DR12 galaxies, and the eBOSS DR14 quasars. Adding the recent BAO measurements to the cosmic microwave background (CMB) data from WMAP, we constrain cosmological parameters $\Omega_m=0.298\pm0.005$, $H_0=68.36^{+0.53}_{-0.52} {\rm km}\cdot {\rm s}^{-1}\cdot {\rm Mpc}^{-1}$, $\sigma_8=0.8170^{+0.0159}_{-0.0175}$ in a spatially flat $\Lambda$ cold dark matter ($\Lambda$CDM) model, and $\Omega_m=0.302\pm0.008$, $H_0=67.63\pm1.30 {\rm km}\cdot{\rm s}^{-1}\cdot {\rm Mpc}^{-1}$, $\sigma_8=0.7988^{+0.0345}_{-0.0338}$ in a spatially flat $w$CDM model, respectively. Our measured $H_0$ results prefer a value lower than 70 ${\rm km}\cdot {\rm s}^{-1}\cdot{\rm Mpc}^{-1}$, consistent with the recent data on CMB constraints from Planck (2018), but in $3.1$ and $3.5\sigma$ tension with local measurements of SH0ES (2018) in $\Lambda$CDM and $w$CDM framework, respectively. Our results indicate that there is a systematic tension on the Hubble constant between SH0ES and the combination of CMB and BAO datasets.  相似文献   

12.
马启慧  张宇  王清  董红刚  董闯 《物理学报》2019,68(6):62101-062101
Co-Al-W基高温合金具有类似于Ni基高温合金的γ+γ'相组织结构.根据面心立方固溶体的团簇加连接原子结构模型,Ni基高温合金的成分式即最稳定的化学近程序结构单元可以描述为第一近邻配位多面体团簇加上次近邻的三个连接原子.本文应用类似方法,首次给出了Co-Al-W基高温合金的团簇成分式.利用原子半径和团簇共振模型,可计算出Co-Al-W三元合金的团簇成分通式,为[Al-Co_(12)](Co,Al,W)_3,即以Al为中心原子、Co为壳层原子的[Al-Co_(12)]团簇加上三个连接原子.对于多元合金,需要先将元素进行分类:溶剂元素——类Co元素Co (Co, Cr, Fe, Re, Ni,Ir,Ru)和溶质元素——类Al元素Al (Al,W,Mo, Ta,Ti,Nb,V等);进而根据合金元素的配分行为,将类Co元素分为Co~γ(Cr, Fe, Re)和Co~(γ')(Ni, Ir, Ru);根据混合焓,将类Al元素分为Al, W (W, Mo)和Ta (Ta, Ti, Nb, V等).由此,任何多元Co-Al-W基高温合金均可简化为Co-Al伪二元体系或者Co-Al-(W,Ta)伪三元体系,其团簇加连接原子成分式为[Al-Co_(12)](Co_(1.0)Al_(2.0))(或[Al-Co_(12)] Co_(1.0)Al_(0.5)(W,Ta)_(1.5)=Co_(81.250)Al_(9.375)(W,Ta)_(9.375) at.%).其中,γ与γ'相的团簇成分式分别为[Al-Co_(12)](Co_(1.5)Al_(1.5))(或[Al-Co_(12)] Co_(1.5)Al_(0.5)(W,Ta)_(1.0)=Co_(84.375)Al_(9.375)(W,Ta)_(6.250) at.%)和[Al-Co_(12)](Co_(0.5)Al_(2.5))(或[Al-Co_(12)] Co_(0.5)Al_(0.5)(W, Ta)_(2.0)=Co_(78.125)Al_(9.375)(W,Ta)_(12.500)at.%).例如,Co_(82)Al_9W_9合金的团簇成分式为[Al-Co_(12)]Co_(1.1)Al_(0.4)W_(1.4)(~[Al-Co_(12)]Co_(1.0)Al_(0.5)W_(1.5)),其中γ相的团簇成分式为[Al-Co_(12)]Co_(1.6)Al_(0.4)W_(1.0)(~[Al-Co_(12)]Co_(1.5)Al_(0.5)W_(1.0)),γ'相的团簇成分式为[Al-Co_(12)]Co_(0.3)Al_(0.5)W_(2.2)(~[AlCo_(12)]Co_(0.5)Al_(0.5)W_(2.0)).  相似文献   

13.
Chun-Mei Li 《中国物理 B》2022,31(5):56105-056105
The alloying and magnetic disordering effects on site occupation, elastic property, and phase stability of Co$_{2}Y$Ga ($Y={\rm Cr}$, V, and Ni) shape memory alloys are systematically investigated using the first-principles exact muffin-tin orbitals method. It is shown that with the increasing magnetic disordering degree $y$, their tetragonal shear elastic constant $C'$ (i.e., $(C_{11}-C_{12})/2$) of the $L2_{1}$ phase decreases whereas the elastic anisotropy $A$ increases, and upon tetragonal distortions the cubic phase gets more and more unstable. Co$_{2}$CrGa and Co$_{2}$VGa alloys with $y\geq0.2$ thus can show the martensitic transformation (MT) from $L2_{1}$ to $D0_{22}$ as well as Co$_{2}$NiGa. In off-stoichiometric alloys, the site preference is controlled by both the alloying and magnetic effects. At the ferromagnetism state, the excessive Ga atoms always tend to take the $Y$ sublattices, whereas the excessive Co atom favor the $Y$ sites when $Y={\rm Cr}$, and the excessive $Y$ atoms prefer the Co sites when $Y={\rm Ni}$. The Ga-deficient $Y={\rm V}$ alloys can also occur the MT at the ferromagnetism state by means of Co or V doping, and the MT temperature $T_{\rm M}$ should increase with their addition. In the corresponding ferromagnetism $Y={\rm Cr}$ alloys, nevertheless, with Co or Cr substituting for Ga, the reentrant MT (RMT) from $D0_{22}$ to $L2_{1}$ is promoted and then $T_{\rm M}$ for the RMT should decrease. The alloying effect on the MT of these alloys is finally well explained by means of the Jahn-Teller effect at the paramagnetic state. At the ferromagnetism state, it may originate from the competition between the austenite and martensite about their strength of the covalent banding between Co and Ga as well as $Y$ and Ga.  相似文献   

14.
The effect of the layer thickness on the magnetic properties of {Co/Tb}n, {Co/Tb}n/Co, and {Co/Tb}n/Co/Cu/Co multilayer films is studied. The dependence of the hysteresis and magnetoresistive properties of {Co(1 nm)/Tb(1 nm)}n/Co(5 nm)/Cu(L Cu)/Co(5 nm) structures on the thickness of the {Co/Tb}n layer and copper spacing are obtained. The feasibility of spin-valve structures based on {Co/Tb}n multilayer films with in-plane anisotropy is demonstrated.  相似文献   

15.
刘莉  苏雄睿 《中国物理 B》2008,17(6):2170-2174
This paper reports that single-layer and graded Au-TiO2 granular composite films with Au atom content 15%- 66% were prepared by using reactive co-sputtering technique. The third-order optical nonlinearity of single-layer and graded composite films was investigated by using s- and p-polarized Z-scans in femtosecond time scale. The nonlinear absorption coefficient βeff of single-layer Au-TiO2 films is measured to be -2.3×10^3-0.76×10^3 cm/GW with Au atom content 15%-66%. The βeff value of the 10-layer Au-TiO2 graded film is enhanced to be -2.1×10^4cm/GW calculated from p-polarized Z-scans, which is about ten times the maximum βeff of single-layer films. Broadened response in the wavelength region 730-860 nm of the enhanced optical nonlinearity of graded Au-TiO2 composite films was also investigated.  相似文献   

16.
The epitaxial (single crystal-like) Pr0.4La0.1Sr0.5MnO3 (PLSMO) and Nd0.35La0.15Sr0.5MnO3 (NLSMO) thin films are prepared and characterized, and the electric and magnetic properties are examined. We find that both PLSMO and NLSMO have their own optimum deposition temperature (To) in their growing into epitaxial thin films. When the deposition temperature is higher than To, a c-axis oriented but polycrystalline thin film grows; when the deposition temperature is lower than To, the thin film tends to be a-axis oriented and also polycrystalline. The most important point is that for the epitaxial PLSMO and NLSMO thin films the electronic phase transitions are closely consistent with the magnetic phase transitions, i.e. an antiferromagnetic phase corresponds to an insulating state, a ferromagnetic phase corresponds to a metallic state and a paramagnetic phase corresponds to a semiconducting state, while for the polycrystalline thin films the electronic phase transitions are always not consistent with the magnetic transitions.  相似文献   

17.
It is proposed that the magnetization-induced anisotropy of magnetic films of cubic crystal structure originates from the anisotropy of atomic pair ordering, shape anisotropy, and strain anisotropy resulting from the constraint of the magnetostriction strain imposed on the film by the substratc. Calculated are the three anisotropy constants and their sum K vs temperature for Ni, Fe, and 55%Ni-Fe films; the room temperature (RT) constants vs the substrate temperature Tt during deposition or annealing after deposition for Ni and 50%Ni Co films; the RT constants vs com- position fraction for Fe-Ni films with Tt = RT, 250℃ and 450℃, Co Ni films at Tt = RT, 100℃ and 320℃, and Fe-Co films with Tt = RT and 300℃; the spread of RT K vs composition fraction for Fe Ni films; and RT △K/K vs composition fraction for Fe-Ni and Co Ni films, where △K denotes the variation of K of the film that is detached from its substrate. The calculated curves well accord with the measurements. The irrelevancy of K to the substrate material and the fast kinetics of the annealing in a field applied in the direction of the hard axis are explained reasonably.[第一段]  相似文献   

18.
Bilayered Fe65Co35 (=FeCo)/Co films were prepared by facing targets sputtering with 4πMs∼24 kg. The soft magnetic properties of FeCo films were induced by a Co underlayer. Hc decreased rapidly when the Co underlayer was 2 nm or more. The films showed well-defined in-plane uniaxial anisotropy with the typical values of Hce=10 Oe and Hch=3 Oe, respectively. High frequency characteristics of the films show the films can work at 0.8 GHz with real permeability as high as 250.  相似文献   

19.
Xiyu Chen 《中国物理 B》2022,31(4):47501-047501
Magnetic susceptibility, specific heat, and neutron powder diffraction measurements have been performed on polycrystalline Li$_{2}$Co(WO$_{4}$)$_{2}$ samples. Under zero magnetic field, two successive magnetic transitions at $T_{\rm N1}\sim 9.4$ K and $T_{\rm N2}\sim 7.4$ K are observed. The magnetic ordering temperatures gradually decrease as the magnetic field increases. Neutron diffraction reveals that Li$_{2}$Co(WO$_{4}$)$_{2}$ enters an incommensurate magnetic state with a temperature dependent $\bm k$ between $T_{\rm N1}$ and $T_{\rm N2}$. The magnetic propagation vector locks-in to a commensurate value $\bm k = (1/2, 1/4, 1/4)$ below $T_{\rm N2}$. The antiferromagnetic structure is refined at 1.7 K with Co$^{2+}$ magnetic moment 2.8(1) $\mu_{\rm B}$, consistent with our first-principles calculations.  相似文献   

20.
刘波  宋志棠  张挺  封松林  干福熹 《中国物理》2004,13(7):1167-1170
In this paper, Ag_{11}In_{12}Te_{26}Sb_{51} phase change semiconductor films have been prepared by dc sputtering. The crystallization behaviour of amorphous Ag_{11}In_{12}Te_{26}Sb_{51} thin films was investigated by using differential scanning calorimetry and x-ray diffraction. It was found that the crystallization temperature is about 483K and the melting temperature is 754.8K and the activation energy for crystallization, E_a, is 2.07eV. The crystalline Ag_{11}In_{12}Te_{26}Sb_{51} films were obtained using initializer. The initialization conditions have a great effect on the sheet resistance of Ag_{11}In_{12}Te_{26}Sb_{51} films. We found that the effect of the initialization condition on the sheet resistance can be ascribed to the crystallinity of Ag_{11}In_{12}Te_{26}Sb_{51} films. The sheet resistance of the amorphous (R_{amo}) film is found to be larger than 1×10^6Ω and that of the crystalline (R_{cry}) film lies in the range from about 10^3 to 10^4Ω. So we have the ratio R_{amo}/R_{cry}=10^2~10^3, which is sufficiently large for application in memory devices.  相似文献   

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