Sb量子点掺杂钠硼硅玻璃的三阶光学非线性

采用溶胶-凝胶法以正硅酸乙酯、硼酸、金属钠为前驱体合成了含Sb量子点的钠硼硅玻璃。紫外-可见(UV-vis)吸收光谱分析表明量子点玻璃的表面等离子体共振吸收峰在566nm附近;利用飞秒激光钛宝石Z-扫描(Z-scan)技术在800nm波长处对玻璃样品的非线性光学性质进行研究,得到了该玻璃的非线性折射率γ,非线性吸收系数β和三阶非线性极化率χ(3)分别为8.59×10-17 m2/W、1.80×10-10 m/W、4.75×10-11 esu;X-射线粉末衍射(XRD)分析表明具有斜方六面体晶相结构的Sb量子点成功的掺入到玻璃基体中;通过透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)对量子点的尺寸大小和颗粒分布进行了表征,结果显示Sb量子点在玻璃中呈规则的球形,并且颗粒尺寸在19~25nm之间。     

半导体掺杂玻璃的微晶结构及超快弛豫过程

透射电子显微镜(TEM)研究了CdS_0.3,Se_0.7掺杂的半导体微晶玻璃的微晶尺寸分布,微晶尺寸由热处理温度和时间来控制。当微晶尺寸接近或小于激子Bohr半径时,吸收光谱出现亚带结构,带隙能向高能移动,证明了量子尺寸效应。非相干光时间延迟的四波混频(TDFWM-IL)技术测试研究了玻璃的快速弛豫过程。     

纳米二氧化钛的量子尺寸效应及掺杂氧化锡对其光吸收的影响

采用溶胶 -凝胶法制备了量子尺寸的纳米氧化钛和锡掺杂的纳米氧化钛 ,经过不同温度的热处理得到不同尺寸的粉末样品 .通过X射线衍射 (XRD)和电子衍射 (ED)表征了不同样品的物相组成和粒径 (3～ 12nm) ,通过反射谱 (RS)深入研究了纳米氧化钛的量子尺寸效应及掺杂氧化锡对于纳米氧化钛光吸收性质的影响 .实验结果表明纳米氧化钛有明显的光吸收量子尺寸效应 ,掺杂氧化锡促进了二氧化钛的锐钛矿向金红石相的转变 ,降低了相变起始温度 .由于相变和尺寸变化两方面相反的作用 ,掺杂氧化锡对于二氧化钛光吸收边的位移影响不大     

溶胶—凝胶法制备CdS微晶掺杂TiO2／SiO2薄膜及其非线性光学特性

采用溶胶－凝胶方法在普通的载玻片上制备了ＣｄＳ微晶掺杂的ＴｉＯ２／ＳｉＯ２复合薄膜。用正硅酸乙酯、钛酸丁酯、醋酸镉作原料，比较了两种硫化剂：硫尿和硫代乙酰氨的硫化作用。Ｘ射线衍射谱和拉曼光谱揭示了ＣｄＳ微晶镶嵌在ＴｉＯ２／ＳｉＯ２薄膜的玻璃网络中。不同热处理温度、不同热处理时间的吸收光谱表明薄膜中存在着量子尺寸效应。采用Ｚ扫描技术测量了薄膜的非线性吸收及非线性折射率ｎ２＝－４．６７×１０－７ｅｓｕ。     

铁电半导体碘硫化锑量子点复合材料及其光学性能的研究

用溶胶-凝胶法成功地制备了铁电半导体碘硫化锑(SbSI)微晶掺杂有机改性的TiO_2薄膜及块状凝胶。铁电SbSI晶体在C轴具有非常大的介电常数,非常高的电-光系数,较大的光电导系数,同时又是一种本征半导体材料。将SbSI掺杂到非晶态的基质中,通过热处理及气氛保护的方法控制微晶的生长。通过X射线衍射光谱与高分辨透射电子显微镜观察到微晶的存在以及晶体尺寸和分布情况。使用简并的四波混频的方法测得了薄膜样品的三阶非线性极化率,并在块状样品中发现了复合材料中存在的电控双折射效应,测得样品的有效电光系数为2.42×10~(-3)nm/V。     

GeO2-SiO2纳米复合材料的合成及其光学特性研究

运用溶胶-凝胶法合成了GeO2-SiO2纳米复合材料,探索了为pH在2的条件下通过水解Si(OC2H5)4和GeCl4合成GeO2-SiO2干胶的过程.在100～1 200℃下对干胶进行热处理.采用UV光谱法测定了材料的光学性质,观察到随热处理温度的升高,样品光谱的吸收边向长波方向移动.由于温度的影响,晶粒长大,带隙能量减小,纳米微晶的量子尺寸效应显示出来.经X射线衍射分析,观察到了随热处理温度的增高,材料结构从无序到有序的转变过程,直到1 100℃时,有明显的微晶生成,其尺寸为5～10nm.     

有机/无机薄膜凝胶动态过程的实时光学二次谐波产生研究

采用实时光学二次谐波产生(SHG)测量方法,以两亲性分子半花菁为掺杂探针分子,对溶胶-凝胶技术制备的玻璃薄膜的凝胶干燥的动态过程进行了研究.结合紫外—可见吸收光谱的测量,发现：因两亲性分子在膜中的自取向性可诱导出二阶光学非线性,溶胶-凝胶技术制备的有机/无机复合膜的凝胶干燥过程可通过薄膜SHG强度的变化半定量地反映.凝胶干燥收缩导致有序掺杂分子数减少,膜片的光学非线性减弱.该过程随薄膜处理温度的升高而急剧缩短;另外,有机分子在膜中的聚集程度随膜片处理温度的增加而很快减少. 关键词：     

CdSe量子点的线性和非线性光学特性

主要从实验和理论两个方面,探讨了强受限尺寸区域内不同尺寸对CdSe量子点线性和非线性光学性质的影响.用吸收光谱研究了量子点尺寸与吸收峰之间的关系,用皮秒Z扫描技术研究了共振和非共振情况下(激发光波长分别为532和1064nm),尺寸与三阶非线性极化率之间的关系.基于电子能量状态理论和局域场增强理论对量子点进行分析,得到了CdSe不同尺寸的三阶非线性效应,研究了尺寸对量子点非线性光学性质的影响.结果表明,由激发态粒子数布局改变和纳米颗粒增大引起的非线性共振增强效应相当,二者共同作用使得三阶极化率增强20倍左右,且用532nm的共振频率激发4.3nm CdSe量子点时,χ⁽³⁾具有最大值2.0×10^-11esu. 关键词： CdSe量子点 三阶非线性 Z扫描')" href="#">Z扫描 量子限域效应     

硫化铋微晶掺杂薄膜的制备及光学性能的研究

用溶胶－凝胶法能够有效地制备含０．５％的具有量子尺寸效应的Ｂｉ２Ｓ３微晶掺杂硅薄膜。薄膜的室温透射光谱发现，在５００℃热处理时，随着热处理时间的延长，薄膜的特征透射谱谷会发生向长波方向的移动，作者认为这样的移动于量子尺寸效应。本文还报道了在ＹＡＧ强激光的作用下能够观察到薄膜样品所产生的倍频信号，并讨论了产生倍频的原因。     

玻璃中的ZnS:Mn2+超微粒发光的量子尺寸效应

自从Bhargava等^[1]报道了化学反应合成的ZnS:Mn²⁺纳米微粒的光学性质,掺杂半导体纳米微粒发光性质的研究受到了极大的重视。掺杂纳米微粒有可能成为新的一类发光材料.本文报导用熔融法制备的ZnS:Mn²⁺玻璃在光学性质上的量子尺寸效应。     

Diode-pumped Tm:KY(WO4)2 laser passively Q-switched with PbS-doped glass

Glass doped with PbS quantum dots is presented as a saturable absorber (SA) for a passive Q-switching of a diode-pumped 1.9 μm Tm:KYW laser. Output pulses with energy of 44 μJ at a repetition rate of 2.5 kHz with an average output power of 110 mW were obtained. The Q-switching conversion efficiency was 33%. The absorption saturation intensity of the glass doped with PbS quantum dots with a mean radius of 5.2 nm at a wavelength of 2 μm was measured to be 1.5 MW/cm².     

Ultrasound-assisted synthesis of PbS quantum dots stabilized by 1,2-benzenedimethanethiol and attachment to single-walled carbon nanotubes

Lead sulfide (PbS) quantum dots stabilized by 1,2-benzenedimethanethiol can be synthesized by mixing Pb(NO₃)₂ and Na₂S solutions in ethanol under ultrasound irradiation. The PbS quantum dots (2.7 and 3.6 nm in diameter) are characterized by their absorption and fluorescence spectra in the near infrared region and by other surface analytical techniques. With addition of single-walled carbon nanotubes (SWNT) to the system, this ultrasound-assisted procedure allows attachment of PbS nanoparticles to SWNT surface via π–π stacking, thus providing a simple one-pot method for preparation of SWNT–PbS nanoparticle composite materials. Using the ultrasound-assisted method for synthesizing silica composites containing PbS nanoparticles by a sol–gel process is also described.     

The influence of silver ion exchange on the formation and luminescent properties of lead sulfide molecular clusters and quantum dots

PbS molecular clusters and quantum dots are formed by heat treatment in fluorophosphate glasses of the Na₂O₃–Р₂O₅–Ga₂O₃–AlF₃–ZnO(S)–PbF₂ system with different lead concentrations. PbS molecular clusters are characterized by optical absorption in the range of 300–800 nm and low quantum yields, which decrease from 8.9 to 2.7% with a semiconductor component concentration. It is shown that the parameters of formation of quantum dots luminescing in the wavelength range of 1000–1500 nm are considerably different at different semiconductor component concentrations. The influence of silver ion exchange on the formation of PbS nanoparticles is studied. Introduction of silver stimulates the growth of molecular clusters, which is seen in the absorption spectra. A possible mechanism of interaction of silver nanoparticles with PbS quantum dots is presented.     

Effect of 160 MeV Ni ion irradiation on PbS quantum dots

PbS quantum dots of average size 10 nm are encapsulated in a matrix (polyvinyl alcohol (PVA)) following chemical route. They are irradiated with 160 MeV Ni¹²⁺ ion beam with fluences 10¹²-10¹³ ions/cm². Red shift in the absorption response in the optical absorption spectra reveal size enhancement of the quantum dots after irradiation and was confirmed by transmission electron microscopy (TEM). Photoluminescence (PL) study was carried out with excitation wavelength 325 nm on both unirradiated and irradiated samples at different fluences and fluence-dependent surface states and excitonic emission is observed in the PL study. The Huang-Rhys coupling constant decreases significantly after swift heavy ion (SHI) irradiation and shows a decreasing trend with increase in ion fluence.     

Experiment and modeling of a diode-pumped 1.3 μm Nd:YVO<Subscript>4</Subscript> laser passively Q-switched with PbS-doped glass

A diode-pumped 1.34 m Nd:YVO₄ laser passively Q-switched with PbS quantum dots doped glass is presented. An average output power of 24 mW with a Q-switching efficiency of 13% and a Q-switched pulse width of 15 ns was obtained. A four level spectroscopic model of a PbS quantum dots doped glass saturable absorber is applied to numerically simulate passively Q-switched Nd:YVO₄ laser operation. It has been shown that for the simulation of passive Q-switching of 1.3 m Nd:YVO₄ lasers with PbS doped glasses as the saturable absorbers, it is necessary to take into account intensity dependence of bleaching relaxation times. PACS 42.60.Gd; 42.55.Xi; 42.70.Hj     

Photoconductivity and photoluminescence in chemically deposited films of (Cd0.95-Pb0.05)S: CdCl2,Ce

The results of photoconductivity (PC), photoluminescence (PL), optical absorption spectra, XRD and SEM studies are presented for (Cd_0.95-Pb_0.05)S: CdCl₂,Ce films prepared by chemical bath deposition technique. PC gains ∼10⁷ are found in doped films. PL emission spectrum is found in red region which is related to 5d to 4f transition in Ce. Films prepared at 60°C show better PC while those prepared at room temperature (RT) show better PL. Optical absorption studies show reduction in band gap due to addition of PbS. A peak due to Ce is also observed in absorption spectrum. XRD studies show the presence of both CdS and PbS. SEM studies show presence of microcrystals, cluster of grains along with some rod type structures.     

Photoconductive properties of some chemically deposited (Cd–Pb)s films

Films of (Cd–Pb)S have been prepared using chemical deposition in aqueous alkaline bath and their subsequent condensation on substrates. Important achievements in terms of electrical response, optical absorption and photoconductivity (PC) excitation spectra, SEM, XRD and photoluminescence (PL) studies are presented and discussed. From the photocurrent curves, the ratio I_PC (saturated photocurrent)/I_DC (dark current) was observed to be of the order of 10⁶ for the systems prepared with CdCl₂, and to be 10⁷ when doped with samarium nitrate. Values of trap depth E, lifetime and mobility are evaluated from the PC decay. Band-gaps are determined from the two spectra. Diffraction lines in XRD studies are associated to CdS and PbS, and according to SEM studies layered growth of the films takes place. PL of samarium doped (Cd–Pb)S films shows an emission peak in the green-yellow region under 365?nm excitation. The PL brightness decreases with temperature.     

Vibronic spectra of matrix-isolated lead sulfide

Vibronic spectra are reported for lead sulfide in argon, krypton and SF₆ matrices at low temperatures. Emission stimulated by laser line irradiation of PbS is observed from the v′ = 0 level of three electronic states lying at about 14 500, 18 500 and 21 500 cm^?1 above the ground state. Emission is also observed from an excited state of Pb₂S₂ at about 17 000 cm^?1. In addition, the laser radiation gives rise to the vibrational Raman spectrum of PbS in argon at 423.2 cm^?1 and to a very weak Raman band at 297 ± 2 cm^?1 which we attribute to Pb₂S₂.The effects of temperature on the matrix spectra, of matrix material on the band origins, and of matrix concentration on the vibrational relaxation process, and the apparent degrees of coupling among the electronic states have all been examined. The electronic absorption spectrum of PbS in Ar is reported and the matrix data are compared with available information on gaseous PbS.     

Stimulated emission from PbS‐quantum dots in glass matrix

The luminescence behavior of PbS‐quantum dots in glass matrix (PbS:Glass) is investigated. Steady‐state and time‐resolved photoluminescence are applied in a wide range of excitation densities up to pulse energies exceeding 50 µJ/cm². While perfect linear recombination is observed across four orders of magnitude, an additional radiative recombination mechanism emerges at an excitation density of 1 µ J/cm² per pulse at 390 nm excitation and increases the external quantum efficiency. The time constant of this process is ∼20–40 ps. It is ascribed to stimulated emission. No hint to any non‐linear non‐radiative processes such as Auger recombination is observed. Thermal effects, however, still set limits. This is encouraging news for PbS:Glass as potential laser material.     

Trap elimination and reduction of size dispersion due to aging in CdS<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript> quantum dots

Quantum Dots of CdS _x Se_1−x embedded in borosilicate glass matrix have been grown using Double-Step annealing method. Optical characterization of the quantum dots has been done through the combinative analysis of optical absorption and photoluminescence spectroscopy at room temperature. Decreasing trend of photoluminescence intensity with aging has been observed and is attributed to trap elimination. The changes in particle size, size distribution, number of quantum dots, volume fraction, trap related phenomenon and Gibbs free energy of quantum dots, has been explained on the basis of the diffusion-controlled growth process, which continues with passage of time. For a typical case, it was found that after 24 months of aging, the average radii increased from 3.05 to 3.12 nm with the increase in number of quantum dots by 190% and the size-dispersion decreased from 10.8% to 9.9%. For this sample, the initial size range of the quantum dots was 2.85 to 3.18 nm. After that no significant change was found in these parameters for the next 12 months. This shows that the system attains almost a stable nature after 24 months of aging. It was also observed that the size-dispersion in quantum dots reduces with the increase in annealing duration, but at the cost of quantum confinement effect. Therefore, a trade off optimization has to be done between the size-dispersion and the quantum confinement.