La1-xPrxMnO3(x=0.1,0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La1-xPrxMnO3(x=0.1,0.2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO3单晶基底上.XRD结果显示薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CMR)效应,其中磁电阻比率达95%(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体系中Pr离子的价态为+4价,因此该薄膜很可能是电子掺杂的庞磁电阻体系.     

钙钛矿结构La0.9Sb0.1MnO3的庞磁电阻性质

一种新的钙钛矿结构的庞磁电阻氧化物La_0.9Sb_0.1MnO₃已用固态反应方法制 成，通过超导量子干涉器件(SQUID)装置测量研究了它的电输运性质和磁性质.x射线光电子 能谱分析证明，该氧化物中Sb的价态是+5价，因此该氧化物是一种新的电子掺杂型庞磁电阻 材料. 关键词： 钙钛矿结构 0.9Sb_0.1MnO₃')" href="#">La_0.9Sb_0.1MnO₃ 电子掺杂 庞磁电阻     

(La1-xCex)2/3Ca1/3MnO3体系的结构和输运性质研究

关键词：     

纳米多晶La0.7Sr0.3MnO3－δ的输运性质和磁电阻效应研究

利用溶胶-凝胶法制备了纳米多晶La_0.7Sr_0.3MnO_3-δ(LSM)块体样品.详细研究了在不同烧结温度下的LSM样品电阻率随测量温度的变化关系和磁电阻效应.随着测量温度从室温降低,电阻率ρ都在250K附近存在最大值,低于该温度后,样品表现为金属导电特性,随后在50K左右存在一极小值.即随着温度从50K左右降低到4.2K,ρ反而逐渐升高,表现为绝缘体性的导电特性.研究表明,在低温下(<50K),ρ随温度降低而升高的现象与隧穿效应的理论模型(lnρ∝T^1/2)符合得很好,表明这种现象是由于传导电子在通过邻近LSM晶粒间表面/界面层时的隧道效应所致.而在50—250K的温度范围内,其电阻率与T²成正比,表现为LSM本征的金属导电特性.因此这种低温下电阻率的极小值现象来源于隧穿效应和LSM晶粒本征的金属导电特性的相互竞争.本文还详细研究了相应的隧道磁电阻效应. 关键词： 0.7Sr_0.3MnO_3-δ')" href="#">多晶La_0.7Sr_0.3MnO_3-δ 隧道效应 隧道磁电阻效应     

多晶La0.7Sr0.3MnO3的低温输运性质和磁电阻效应

详细研究了由纳米晶粒组成的块体多晶La_0.7Sr_0.3MnO₃(LSM)的电阻率和磁电阻效应,以及它们的温度依赖性.随着温度从室温降低,电阻率(ρ)在250K附近存在一最大值,低于该温度后,样品表现为金属导电特性,随后在50K附近存在一极小值.也就是说在低于50K的温度范围内,随着温度降低ρ反而升高,表现为绝缘体性的导电特性.经研究发现,这种随温度降低ρ反而增加的现象与隧穿效应的理论模型(lnρ∝T^-1/2)符合得很好 关键词： 0.7Sr_0.3MnO₃')" href="#">多晶La_0.7Sr_0.3MnO₃ 隧道效应 隧道磁电阻效应     

La0.67Ba0.33MnO3薄膜的激光辐照效应研究

利用脉冲激光沉积技术在LaAlO₃（00l）单晶衬底上制备了La_067Ba_033MnO₃薄膜,研究了CO₂激光辐照对La_067Ba_033MnO₃薄膜的微结构和磁电性能的影响.结果表明,经激光辐照后,La_067Ba_033MnO₃薄膜的结晶性增强,薄膜应变减小;薄膜表面形貌由“岛状”结构变为“平原"结构,且粗糙度大大降低;同时,薄膜的饱和磁化强度、铁磁居里温度、金属—绝缘态转变温度和磁电阻增大,而矫顽场和电阻率减小.根据对传统退火效应的分析和理论计算,认为激光辐照导致的表面微结构的变化以及薄膜的氧含量和均匀性的提高对La_067Ba_033MnO₃薄膜的磁电性能的改善与优化密切相关. 关键词： 庞磁电阻 激光辐照 脉冲激光溅射沉积     

La2/3Sr1/3MnO3/BaTiO3复合薄膜的制备及其电致磁电效应研究

使用脉冲激光沉积技术,在LaAlO₃(001)单晶基片上制备了La_2/3Sr_1/3MnO₃(LSMO)/BaTiO₃(BTO)双层薄膜.X射线衍射分析显示,LSMO层和BTO层呈现纯(001)取向.原子力显微镜研究表明,薄膜表面晶粒大小均匀,排列致密,表面均方根粗糙度为1.4 nm.复合薄膜的磁学、电学性能研究表明,其具有良好的磁学和介电性能.电输运测试显示,与在BTO层上施加正方向 关键词： 磁电效应 铁电/铁磁异质结构 脉冲激光沉积     

La1－xSrxMnO3/TiO2 (x=0.2, 0.15, 0.04)异质pn结的整流特性

采用磁控溅射法制备的La_1-xSr_xMnO₃ (LSMO)/TiO₂异质pn结表现出很好的整流特性.室温电流电压特性曲线显示随着Sr掺杂的增加，扩散电压增大，这可能由于Sr掺杂的增加导致载流子浓度增大所致.电流电压变温特性曲线显示随着测量温度的降低，扩散电压增大，这可能由于随着测量温度的变化导致界面电子结构的变化所致.值得提出的，异质pn结电阻随温度变化曲线表现出单层LSMO的金属绝缘相变特性，并且在低测量温度时表现出随着测量温度的降低结电阻增大，这可能是由于宽带隙的TiO₂的引入导致. 关键词： 异质结 整流特性 庞磁阻     

Dy的高掺杂对La0.7Sr0.3MnO3体系磁电性质的影响

通过实验研究了La07-xDyxSr03MnO3(x=000，030，040，050，060，070)体系的M_T曲线，M_H曲线，ρ_T曲线和MR_T曲线. 实验结果表明：随着Dy掺杂的增加，体系从长程铁磁有序向自旋团簇玻璃态、反铁磁及 亚铁磁状态转变. x=030样品的M_T曲线上在TN附近出现磁化强度尖峰， x=040时尖峰消失. 对x=050样品，ZFC的M_T曲线随温度增加出现一个谷，随 后在TN处出现峰；而FC的M_T曲线在低温下呈现负磁矩. 对x=060和070 样品，不论FC还是ZFC的M_T曲线都类似于x=050的ZFC的M_T曲线. 高掺杂时的输 运性质在其磁背景下发生异常. 这些奇异现象用Nel的双格子模型并联合M_H回滞曲线 给予很好地解释. 关键词： 磁结构 输运行为 庞磁电阻效应     

A位的Sm掺杂对La0.67Sr0.33MnO3体系磁电性质的影响

通过实验研究了La067-xSmxSr033MnO3(x=000，010，020，030)体系的M_T曲线、ESR曲线、红外光谱、拉曼光谱、ρ_T曲线和MR_T曲线. 实验结果表明：随着Sm掺杂的增加，体系从长程铁磁有序向自旋团簇玻璃态和反铁磁状态转变，Sm掺杂引起的磁结构变化和额外磁性耦合将导致CMR效应. 关键词： 磁结构 输运行为 庞磁电阻效应     

Electrical transport in La1−x Ca x MnO3 thin films at low temperatures

We report here the low-temperature resistivity of the chemical solution deposited La_1−x Ca _x MnO₃ (x=0.2, 0.3 and 0.33) thin films on LaAlO₃ substrates. The films were post-annealed in atmosphere at 850°C. The low temperature resistivity data has been studied in order to understand the nature of low-temperature conduction processes. The data showed T ² dependence from 60 K to 120 K consistent with the single magnon scattering process. The deviation from this quadratic temperature dependence at low temperatures is attributed to the collapse of the minority spin band. The two-magnon and electron-phonon processes contribute to scattering of carriers in the temperature range above 120 K.     

Metal-insulator transition in electron-doped Ba1−x La x MnO3 compounds

Electron-doped (Ba_1−x La _x )MnO₃ compounds were prepared for x=0−0.5. Measurements of X-ray diffraction (XRD) at room temperature and temperature variation of dc electrical resistivity down to 20 K were carried out. Samples with x=0.2–0.5 exhibit metal-insulator (M-I) transition. The maximum M-I transition temperature (T _c) of 289 K was observed for 30% of La doping (x=0.3). XRD patterns of these samples (x=0.2−0.5) were analyzed using Rietveld refinement. These samples are found to be mostly in single-phase form with orthorhombic symmetry (space group Pbnm). We have found strong correlation between Mn-O-Mn bond angles and T _c of M-I transition. The resistivity data below T _c could be fitted to the expression ρ=ρ ₁+ρ ₂ T ² and this shows that double exchange interaction plays a major role even in Mn⁴⁺-rich compound. Above T _c the resistivity data were fitted to variable range hopping and small polaron models.     

用脉冲激光方法在Si(100)上沉积的Cox-C1-x颗粒膜及其磁电阻效 应

利用脉冲激光沉积方法在Si(100)上制备了Co_x-C_1-x颗粒膜，并研 究了其正磁电阻 效应.实验结果表明，样品在室温下的正磁电阻效应要远远高于低温下的正磁电阻效应；Co _0.02-C_0.98样品具有最大的室温正磁电阻效应，在外加磁场B=1T时 ，其磁电阻 率MR=22%；随着Co含量的增加，Co_x-C_1-x颗粒膜的正磁电阻效应呈 减小趋势.样品 的MR-B的曲线与传统的多 关键词： 正磁电阻效应 x-C_1-x颗粒膜')" href="#">Co_x-C_1-x颗粒膜 脉冲激光沉积     

Effect of cobalt on the magnetoresistance characteristics of rare-earth doped manganites

The effect of cobalt-doping on the magnetic, transport and magnetoresistance characteristics of La_1-xSr_xMnO₃ was investigated. The results show that the magnetoelectric property of rare-earth doped manganites is greatly affected by substitution of Co for Mn sites. The Curie temperature as well as the magnetic moment decreases with the increase of doping concentration, and the samples exhibit obvious characteristics of the spin glass state. Moreover, the magnetoresistance is evidently modulated by doping concentration, and the relevant temperature dependence is also suppressed. In addition, low-temperature magnetoresistance is significantly promoted as doping concentration increases, which renders a value of approximately 50% in the temperature range of 5--200~K and varies within 12.5%. It can be attributed to the effect of spin scattering, induced by cobalt doping, on the itinerant electrons of Mn ions, thus introducing a spin-disorder region into the ferromagnetic region of double-exchange interaction between neighbouring Mn³⁺ and Mn ³⁺ ions.     

Effect of substrate temperature on electrical and magnetic properties of epitaxial La1−x Pb x MnO3 films

Epitaxial La_1−x Pb _x MnO₃ (LPMO) thin films, grown on (100) SrTiO₃ substrates by laser ablation technique at different temperatures between 600 and 850°C, have been characterized for electrical and magnetic properties. The temperature dependence of resistivity showed that the metal-insulator transition temperature (T _MI) decreases with increasing substrate temperature, which has been attributed to decrease in Pb content in the filsm. The YBa₂Cu₃O _x /La_1−x MnO₃ heterostructures, exhibiting both superconductivity and ferromagnetism, have been fabricated.     

Magneto-transport properties of La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3 tunnel junction

Hole-doped rare-earth manganite La_0.7Ca_0.3MnO₃ and the electron-doped manganite La_0.7Ce_0.3MnO₃ both show a metal-insulator transition around 250 K associated with a ferromagnetic transition and colossal magnetoresistance. In an earlier publication we have reported the rectifying characteristic of La_0.7Ca_0.3MnO₃/SrTiO₃/La_0.7Ce_0.3MnO₃ tunnel junction at room temperature, showing that it is possible to fabricate a diode out of the polaronic insulator regime of doped manganites. Here we report the magneto-transport properties of such a tunnel junction above and below the metal-insulator transition. We show, from the large positive magnetoresistance of the tunnel junction at low temperature, that La_0.7Ce_0.3MnO₃ could be a minority spin carrier ferromagnet. The implication of this observation is discussed.     

Colossal magnetoresistance effect in epitaxially grown La2/3Ca1/3MnO3 perovskite-like manganite thin films

We report in this work, study on colossal magnetoresistance (CMR) effect in epitaxial La_2/3Ca_1/3 MnO₃ thin films grown on SrTiO₃ (0 0 1) substrates by pulsed laser deposition (PLD) technique. The films were grown on as-received SrTiO₃ substrates and on SrTiO₃ substrates prepared by HF etching (Koster et al., Appl. Phys. Lett. 73 (1998) 2920; V. Leca et al., Wet etching methods for perovskite substrates, University of Twente, MESA+ Research Institute, Low Temperature Division). Two of the samples were annealed in different conditions to investigate the films heat treatment effect on electric and magnetic properties. Electrical resistance was done using the four-probe method at temperatures in the range of 2–375 K without a magnetic field and in an external field of 5 T applied in the film plane. Resistance-magnetic field (R vs. H) at 77 K for the two annealed samples was done in a 5 T sweep magnetic field. The surface morphology and structural information of the films were obtained using atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. Secondary ion mass spectroscopy (SIMS) analysis was performed on the annealed samples to investigate any possible chemical reaction between La_2/3Ca_1/3MnO₃ thin films and SrTiO₃ substrate.     

Anisotropic transport and optical properties of superconducting (La1-xSrx)2CuO4 single crystal thin films

An experimental study on the resistivity, Hall coefficient, upper critical field, and optical reflection and transmission characteristics is described for single-crystalline superconducting (La_1-xSr_x)₂CuO₄ thin films epitaxially grown on SrTiO₃ single crystal substrates by rf magnetron sputtering. These properties exhibit pronounced anisotropy between the c-axis direction and the Cu-O plane. The characteristics are consistently explained from the point of view of the two-diemensional (2D) electronic structure. The most noteworthy implication of the experimental results is that the transport along the c-axis is far from an itinerant picture. This leads to the idea that the superconductivity in the series of cuprate materials is caused by the 2D electronic system arising from the Cu-O planes, and some interactions between them, which is not possibly due to itinerant carriers.