Characterization of a-plane orientation ZnO film grown on GaN/Sapphire template by pulsed laser deposition

In this study, the authors have investigated the structural and optical properties of ZnO layer grown by pulsed laser deposition on GaN/r-plane sapphire. X-ray diffraction results demonstrate the ZnO film to be highly preferentially deposited at a-axis orientation; the different rocking curve values along the two orthogonal directions indicate the low C_2v symmetry in the growth a-plane ZnO. From free stress to large tensile stress (about 1.34 × 10⁹ Pa) distribution along the growth direction of ZnO is revealed by visible Raman mapping spectra. The enhanced significantly high-order longitudinal-optical (LO) phonon modes up to 4th and no TO phonons have been observed in Raman spectrum under UV 325 nm by resonance conditions; an intense and broad disorder activated surface phonon mode is also observed, resulting from the increased disorder on the film surface with stripe-like growth features. Low-temperature photoluminescence measurements reveal that the band-edge emission of ZnO is dominated by neutral donor-bound exciton and free electrons to neutral acceptor emissions. Interfacial microstructure of ZnO/GaN has been examined by transmission electron microscopy, with the epitaxial relationship () ZnO//() GaN. All these results indicated that GaN template played an important role in the growth of ZnO film, with full advantage of small lattice mismatch.     

GaN/LiNbO3 (0 0 0 1) interface formation calculated from first-principles

The stable adsorption sites for both Ga and N ions on the ideal and on the reconstructed LiNbO₃ (0 0 0 1) surface are determined by means of first-principle total energy calculations. A single N layer is found to be more strongly bound to the substrate than a single Ga layer. The adsorption of a GaN monolayer on the polar substrate within different orientations is then modeled. On the basis of our results, we propose a microscopic model for the GaN/LiNbO₃ interface. The GaN and LiNbO₃ (0 0 0 1) planes are parallel, but rotated by 30° each other, with in-plane epitaxial relationship [1 0 0]_GaN‖ [1 1  0]_LiNbO3. In this way the (0 0 0 1) plane lattice mismatch between GaN and LiNbO₃ is minimal and equal to 6.9% of the GaN lattice constant. The adsorbed GaN and the underlying LiNbO₃ substrate have parallel c-axes.     

Observation of γ-delayed 3α breakup of the 15.11 and 12.71 MeV states in C

The reactions at 4.9 MeV and at 8.5 MeV have been used to investigate the γ decay of states in ¹²C. By measuring the four-body final state in complete kinematics we are able to detect γ transitions indirectly. We find γ transitions from the 15.11 MeV state in ¹²C to the 12.71, 11.83, 10.3 and 7.65 MeV states followed by their breakup into three α particles. The relative γ-ray branching ratios obtained are (1.2±0.3), (0.32±0.12), (1.4±0.2) and (4.4±0.8)%, respectively, with the remaining (92.7±1.0)% of the γ decays going to the bound states. We obtain Γ_α/Γ=(2.8±1.2)% for the isospin-forbidden α decay of the 15.11 MeV state. From the 12.71 MeV state we find γ transitions to the 10.3 and 7.65 MeV states. The relative γ-ray branching ratios are and , respectively, with the remaining of the γ decays going to the bound states. Finally, we discuss the relation between the β decay of ¹²N and ¹²B to states in ¹²C and the γ decay of the 15.11 MeV analog in ¹²C to the same states.     

Epitaxial ZnO films grown on ZnO-buffered c-plane sapphire substrates by hydrothermal method

ZnO films are hydrothermally grown on ZnO-buffered c-plane sapphire substrates at a low temperature of 70 °C. A radio-frequency (RF) reactive magnetron sputtering has been used to grow the ZnO buffer layers. X-ray diffraction, scanning electron microscopy, and room temperature photoluminescence are carried out to characterize the structure, morphology and optical property of the films. It is found that the films are stress-free. The epitaxial relationship between the ZnO film and the c-plane sapphire substrate is found to be ZnO (0 0 0 1)||Al₂O₃ (0 0 0 1) in the surface normal and in plane. Sapphire treatment, as such acid etching, nitridation, and oxidation are found to influence the nucleation of the film growth, and the buffer layers determine the crystalline quality of the ZnO films. The maximum PL quantum efficiency of ZnO films grown with hydrothermal method is found to be about 80% of single-crystal ZnO.     

The surface phase transition and low-temperature phase of α-Ga(0 1 0) studied by SPA-LEED

The order–disorder phase transition on the α-Ga(0 1 0) structure was studied by spot-profile analysis low energy electron diffraction (SPA-LEED). A low temperature diffraction pattern reveals a small splitting of the overlayer spots which corresponds to a real-space distance of 81 Å, equivalent to 18 unit cells. The splitting is interpreted as caused by a regular ordering of anti-phase domains of the low-temperature phase. Due to the low symmetry of the surface, the domain boundaries are aligned only in one direction, giving rise to a regular, one-dimensional grid. The temperature dependence of the intensity and width of the reconstruction-induced diffraction spots is also investigated. It suggests that the phase transition takes place at a critical temperature T_c=232 K and that anti-phase boundary proliferation plays a role.     

Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces

The formation of step bunches and/or facets on hydrogen-etched 6H-SiC(0 0 0 1) and () surfaces has been studied, using both nominally on-axis and intentionally miscut (i.e. vicinal) substrates. It is found that small miscuts on the (0 0 0 1) surface produce full unit-cell high steps, while half unit-cell high steps are observed on the () surface. The observed step normal direction is found to be for both surfaces. Hence, for intentionally miscut material, a miscut oriented towards this direction produces much better order in the step array compared to a miscut oriented towards a direction. For (0 0 0 1) vicinal surfaces that are miscut towards the direction, the formation of surface ripples is observed for 3° miscut and the development of small facets (nanofacets) is found for higher miscut angles. Much less faceting is observed on miscut () surfaces. Additionally, the (0 0 01) surface is found to have a much larger spatial anisotropy in step energies than the () surface.     

Atomic layer deposition and characterization of Ga-doped ZnO thin films

Low-resistivity n-type ZnO thin films were grown by atomic layer deposition (ALD) using diethylzinc (DEZ) and H₂O as Zn and O precursors. ZnO thin films were grown on c-plane sapphire (c- Al₂O₃) substrates at 300 C. For undoped ZnO thin films, it was found that the intensity of ZnO () reflection peak increased and the electron concentration increased from 6.8×10¹⁸ to 1.1×10²⁰ cm⁻³ with the increase of DEZ flow rate, which indicates the increase of O vacancies () and/or Zn interstitials (Zn_i). Ga-doping was performed under Zn-rich growth conditions using triethylgallium (TEG) as Ga precursor. The resistivity of 8.0×10⁻⁴ Ω cm was achieved at the TEG flow rate of 0.24 μmol/min.     

The observation of hot bands in the 288 nm system of the FeCl2 radical

The 288 nm band system of FeCl₂ has been recorded with a sample produced in a warmed, free-jet expansion at moderately high resolution (with a linewidth of 0.28 cm⁻¹). Under these conditions, several hot bands are observed involving excitation of the symmetric and anti-symmetric stretching vibrations. The wavenumbers determined as a result for FeCl₂ in its ground ⁵Δ_g,4 state are and . No hot, sequence bands in the bending vibration were observed. The most likely explanation is that the wavenumber for ν₂ is essentially the same in both the electronic states involved (88 cm⁻¹). Additional strong hot bands are observed that are unrelated to the previously assigned electronic transitions; they appear to emanate from a low-lying electronic state of FeCl₂.     

The high quality ZnO growth on c-Al2O3 substrate with Cr2O3 buffer layer using plasma-assisted molecular beam epitaxy

High quality epitaxial ZnO films were grown on c-Al₂O₃ substrates with Cr₂O₃ buffer layer by plasma-assisted molecular beam epitaxy (P-MBE). The hexagonal crystalline Cr₂O₃ layer was formed by oxidation of the Cr-metal layer deposited on the c-Al₂O₃ substrate using oxygen plasma. The epitaxial relationship was determined to be ZnO//Cr₂O₃//Cr//Al₂O₃ and ZnO//Cr₂O₃//[0 0 1]Cr//Al₂O_3. The Cr₂O₃ buffer layer was very effective in improving the surface morphology and crystal quality of the ZnO films. The photoluminescence spectrum showed the strong near band-edge emissions with the weak deep-level emission, which implies high optical quality of the ZnO films grown on the Cr₂O₃ buffer.     

Structural, optical and thermal investigations on Dy doped NaF–Li2O–B2O3 glasses

Structural, optical and thermal properties of Dy³⁺ doped lithium fluoroborate glasses have been studied for various concentrations of Dy³⁺ from 0.5 to 5 wt%. The XRD studies confirm the amorphous nature of the glasses while the FTIR spectra reveal the presence of BO₃ and BO₄ local structural units. The UV–VIS–NIR absorption studies were carried out to calculate the bonding parameters ( and δ), to identify the ionic/covalent nature of the glasses. The JO parameters, experimental and theoretical oscillator strengths were also determined and reported. The luminescence spectra have been studied to determine the radiative transition probability (A), stimulated emission cross section () and the experimental and calculated branching ratios (β_R) for the excited levels that include ⁴F_9/2→⁶H_11/2, ⁶H_13/2, and ⁶H_15/2 transitions. The variation of optical properties with varying concentrations of dysprosium oxide content in the glasses are reported and discussed. The thermal behavior of Dy³⁺ doped lithium fluoroborate glasses have been reported by recording DSC thermograms.     

Characterization of [ZnO]m[ZnMgO]n multiple quantum wells grown by molecular beam epitaxy

Thermal stability of single-crystalline [ZnO]_m[Zn_0.7Mg_0.3O]_n multiple quantum wells (MQWs) grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy is reported. X-ray diffraction analysis revealed that these MQWs were grown as designed with a fixed Zn_0.7Mg_0.3O barrier width of and a series of ZnO well widths of . Cathodoluminescence spectra from these MQWs consisted of two major peaks; one was the emission from the bound excitons in Zn_0.7Mg_0.3O barrier layers, and the other was that from the confined excitons in ZnO well layers. These structural and optical properties were found to be dramatically changed by the ex situ annealing treatments over 700 °C. These changes were presumably due to the onset of phase separation of the Zn_0.7Mg_0.3O barrier layers with pronounced Mg diffusion toward the ZnO wells.     

Photoproduction of and of high mass in ultra-peripheral Au + Au collisions at

We present the first measurement of photoproduction of J/ψ and of two-photon production of high-mass e⁺e⁻ pairs in electromagnetic (or ultra-peripheral) nucleus–nucleus interactions, using Au + Au data at . The events are tagged with forward neutrons emitted following Coulomb excitation of one or both Au nuclei. The event sample consists of 28 events with m_e⁺e⁻>2 GeV/c² with zero like-sign background. The measured cross sections at midrapidity of and for m_e⁺e⁻[2.0,2.8] GeV/c² have been compared and found to be consistent with models for photoproduction of J/ψ and QED based calculations of two-photon production of e⁺e⁻ pairs.     

Electronic structure of (0 0 1) AlN/GaN quantum wells by means of a spsd empirical tight-binding Hamiltonian

We have studied the electronic band structure of (0 0 1) AlN/GaN quantum wells by means of a sp³s^∗d⁵ empirical tight-binding Hamiltonian with nearest-neighbor interactions, including spin-orbit coupling and the effects of strain together with the surface Green function matching method. We have analyzed quantum wells with a thickness in the range 2 ? n ? 50, n being the number of principal layers of GaN in the well region. Results are presented for the point and the direction of the 2D Brillouin zone. The orbital character and the spatial localization of the different states have been also studied.     

New observation of the , 1Δg, and 2Πg states and molecular constants with all Li2, Li2, and LiLi data

This paper reports our new observation of the , 1³Δ_g (v = 2–4), and 2³Π_g (v = 2–8) states of ⁶Li⁷Li by continuous wave perturbation facilitated optical–optical double resonance spectroscopy. Combining our new experimental term values of ⁶Li⁷Li with the available experimental data of ⁶Li₂ and ⁷Li₂, molecular constants and potential energy curves by Rydberg–Klein–Rees and direct-potential-fit techniques have been determined. Born-Oppenheimer breakdown parameters of the Li₂ 1³Δ_g and 2³Π_g states are calculated.     

Laser excitation spectrum of C3 in the region 26 000-30 700 cm

The vibrational structure of the electronic state of C₃ in the region 26 000-30 775 cm⁻¹ has been re-examined, using laser excitation spectra of jet-cooled molecules. Rotational constants and vibrational energies have been determined for over 60 previously-unreported vibronic levels; a number of other levels have been re-assigned. The vibrational structure is complicated by interactions between levels of the upper and lower Born-Oppenheimer components of the state, and by the effects of the double minimum potential in the Q₃ coordinate, recognized by Izuha and Yamanouchi [16]. The present work shows that there is also strong anharmonic resonance between the overtones of the ν₁ and ν₃ vibrations. For instance, the levels 2 1⁺ 1 and 0 1 ⁺ 3 are nearly degenerate in zero order, but as a result of the resonance they give rise to two levels 139 cm⁻¹ apart, centered about the expected position of the 2 1⁺ 1 level. With these irregularities recognized, every observed vibrational level up to 30 000 cm⁻¹ (a vibrational energy of over 5000 cm⁻¹) can now be assigned. A vibronic level at 30181.4 cm⁻¹, which has a much lower B′ rotational constant than nearby levels of the state, possibly represents the onset of vibronic perturbations by the electronic state; this state is so far unknown, but is predicted by the ab initio calculations of Ahmed et al. [36].     

Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect

This study investigates the optical anisotropy spectrum in the R-plane (i.e., the -oriented layer plane) of GaN/Al_0.2Ga_0.8N quantum wells of different widths. The optical matrix elements in the wurtzite quantum wells are calculated using the k⋅p finite difference scheme. The calculations show that the valence band mixing effect produces giant in-plane optical anisotropy in -oriented GaN/Al_0.2Ga_0.8N quantum wells with a narrow width. The nature of the in-plane optical anisotropy is found to be dependent on the well width. Specifically, it is found that the anisotropy changes from x^′-polarization to y^′-polarization as the well width increases.     

The v6 = 1 and v6 = 2 vibrational states of DCF3

The high-resolution infrared spectra of DCF₃ were reinvestigated in the ν₆ fundamental band region near 500 cm⁻¹ and around 1000 cm⁻¹ with the aim to assign and analyze the overtone level of the asymmetric CF₃ bending vibration v₆ = 2.The present paper reports on the first study of both its sublevels (A₁ and E corresponding to l = 0 and ±2, respectively) through the high-resolution analysis of the overtone band and the hot and bands.The well-known “loop method”, applied to and , yielded ground state energy differences Δ(K, J) = E₀(K, J) − E₀(K − 3,J) for the range of K = 6 to 30.In the final fitting of molecular parameters, we used the strategy of fitting all upper state data together with the ground state rotational transitions.This is equivalent to that calculating separately the and coefficients of the K-dependent part of the ground state energy terms from the combination loops.All rotational constants of the ground state up to sextic order could be refined in the calculation.This led to a very accurate determination of C₀ = 0.18924413(25) cm⁻¹, , and also .In the course of analyzing simultaneously the overtone band together with the and ν₆ bands, the original assignment of the fundamental ν₆ band [Bürger et al., J. Mol. Spectrosc. 182 (1997) 34-49] was found to be incompatible with the present one. Assignments of the (k + 1, l₆ = +1)/(k − 1,l₆ = −1) levels had to be interchanged, which changed the value of Cζ₆ = −0.14198768(26) cm⁻¹ and the sign of the combination of constants C − B − Cζ in the v₆ = 1 level to a negative value.     

Nanoscale anglesite growth on the celestite (0 0 1) face

In situ atomic force microscopy (AFM) was used to study the growth behaviour of anglesite (PbSO₄) monolayers on the celestite (0 0 1) face. Growth was promoted by exposing the celestite cleavage surfaces to aqueous solutions that were supersaturated with respect to anglesite. The solution supersaturation, β_ang, was varied from 1.05 to 3.09 (where β_ang = a(Pb²⁺) · a(SO₄²⁻)/K_sp,ang). In this range of supersaturation, two single anglesite monolayers (3.5 Å in height each) from pre-existent celestite steps were grown. However, for solution supersaturation β_ang < 1.89 ± 0.06, subsequent multilayer growth is strongly inhibited. AFM observations indicate that the inhibition of a continuous layer-by-layer growth of anglesite on the celestite (0 0 1) face is due to the in-plane strain generated by the slight difference between the anglesite and celestite lattice parameters (i.e. the linear misfits are lower than 1.1%). The minimum supersaturation required to overcome the energy barrier for multilayer growth gave an estimate of the in-plane strain energy: 11.4 ± 0.6 mJ/m²_. Once this energy barrier is overcome, a multilayer Frank–Van Der Merwe epitaxial growth was observed.     

Crystal growth of SrTiO3 films on H-terminated Si(1 1 1) with SrO buffer layers

Growth of epitaxial SrTiO₃ (STO) films has been examined on H-terminated Si(1 1 1) with SrO buffer layers. The epitaxial SrO buffer layers have reduced stress on H-terminated Si substrates. On the SrO buffer layers, the STO films grow epitaxially with triple domains at low temperature. Each STO domain has equivalent epitaxial relationship to SrO buffer layers, STO(1 1 0)∥SrO(1 1 1) and .