Diffraction patterns and nonlinear optical properties of gold nanoparticles

Stable gold nanoparticles have been prepared by using soluble starch as both the reducing and stabilizing agents; this reaction was carried out at 40 °C for 5 h. The obtained gold nanoparticles were characterized by UV–Vis absorption spectroscopy, transmission electron microscopy (TEM) and z-scan technique. The size of these nanoparticles was found to be in the range of 12–22 nm as analyzed using transmission electron micrographs. The optical properties of gold nanoparticles have been measured showing the surface plasmon resonance. The second-order nonlinear optical (NLO) properties were investigated by using a continuous-wave (CW) He–Ne laser beam with a wavelength of 632.8 nm at three different incident intensities by means of single beam techniques. The nonlinear refractive indices of gold nanoparticles were obtained from close aperture z-scan in order of 10^?7 cm²/W. Then, they were compared with diffraction patterns observed in far-field. The nonlinear absorption of these nanoparticles was obtained from open aperture z-scan technique. The values of nonlinear absorption coefficient are obtained in order of 10^?1 cm/W.     

Characterization and nonlinear optical properties of PVP/TiO2 nano-fibers doping with Ag colloid nano-particles

We synthesized PVP/TiO₂ nano-fibers doping with Ag colloid nano-particles by electro-spinning method. These nano-fibers were characterized by UV/visible/NIR spectroscopy, SEM and XRD. The image of SEM showed that the synthesized nano-fibers were monotonous and without knot and had a diameter about 150 nm. We also measured the nonlinear refractive and absorption indexes of the sample in three different intensities using the single beam Z-scan method by a continuous wave (CW) He–Ne laser at 632.8 nm wavelength. The nonlinear refraction indexes of these nano-fibers were measured in order of 10⁻⁷ (cm²/W) with negative sign and the nonlinear absorption coefficient was obtained in order of 10⁻³ (cm/W).     

Comparison of the higher diffraction order images in methyl-red-doped liquid crystal films

We investigate the change of higher diffraction order images in holographic image storage and reconstruction process. In experiments, an s-polarized Ar⁺ laser (488.0 nm) was used to record permanent grating in the dye-doped liquid crystal, 4,4′-n-entylcyanobiphenyl (5CB) doped with 1 wt% methyl-red (MR), at a small incident angle. Higher diffraction order images were observed when the signal beam was focused in front of and behind the film. Then the film was illuminated by an s-polarized He–Ne laser (632.8 nm) in the direction perpendicular to the surface. The higher diffraction order images were reconstructed. A theory about the change of higher diffraction order images is developed, which is in good agreement with experimental results. The results show that the higher diffraction order provides a useful method for optical information processing.     

Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X_C of ～82% and are surrounded by a thin layer of SiO_x. The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X_C to ～65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ～1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text.     

Electric field controlled higher-order diffraction images of paraelectric potassium lithium tantalate niobate

We report some electric field controlled photorefractive higher-order diffraction phenomena of a paraelectric phase potassium lithium tantalate niobate crystal doped with iron. In experiments, a p-polarized semiconductor laser (532 nm) was used to record grating at a small incident angle. Higher-order diffraction images were observed when the signal beam was focused behind and in front of the crystal. Then the higher-order diffraction images were reconstructed by a p-polarized He–Ne laser (632.8 nm) in the direction perpendicular to the surface. The higher-order diffraction images could be controlled by the external electric field. A theory about the higher-order diffraction images of the K and 2K grating is developed. The results show that the even order diffraction images of the K grating and the odd order diffraction of the 2K grating overlap each other. The odd order diffraction images of the K grating are diffracted in unattached direction. The electric field controlled higher-order diffraction image provides a useful method for optical information processing.     

Laser interferometric study of the physical properties of transformer oil

This paper describes the optical, thermal, and electrical properties of an important nonpolar dielectric liquid, transformer oil. Applying dual laser (He–Ne and Argon laser of wavelengths 632.8 and 514.5 nm, respectively), and the Mach–Zehnder interferometric technique, the refractive indices and its temperature gradients are determined. Using Maxwell's and Cauchy's equations, the following optical, thermal, and electrical properties are calculated: optical and dielectric dispersion, optical permittivity and its thermal coefficient, thermal coefficient of volume expansion, specific refraction, specific dispersivity, characteristic impedance, electric susceptibility, and the variation of Cauchy's emperical constants with temperature. Additionally, different physical phenomena are studied as functions of wavelength and temperature.     

Design of multi-layer mirrors for measuring optical phase modulation at 1300 nm

A theoretical design and experimental realization of multi-layer mirrors for Fabry–Perot interferometry and optical telecommunications is described in this work. The mirrors were designed and fabricated by 13 successive thin layers to achieve very high reflectance at optical wavelengths around 1300 nm. Thin layers are ZnS and MgF₂ presenting high and low refractive index, respectively. Layer thickness λ_o/2 at λ_o=656 nm. Experimental results include characterization of transmittance of mirrors around 1300 nm. Additionally, the mirrors were integrated in a Fabry–Perot interferometer to characterize optical sources emitting at 1300 nm. Finally to show a practical application, optical phase modulation was analyzed, using the fabricated mirrors through a scanning Fabry–Perot interferometer acting as high-resolution optical spectrum analyzer (OSA).     

Influence of the ZnO nanoparticle sizes and morphology on the photoinduced light reflectivity

We have established a principal possibility of changes of the light reflectivity at the wavelength of 633 nm (He–Ne laser) under influence of the external laser light. The changes are very sensitive to the wavelength of the photoinduced laser. We have chosen two types of the photoinduced lasers: UV nitrogen 7 ns laser at wavelength 371 nm heating near the absorption edge and the 10 ns 1064 nm Nd:YAG laser with wavelength 1064 nm. The power dependences of the reflectivity were studied. Possible explanation of the observed effects is presented following the conception of the nano-trapping levels. These results have been obtained from two ZnO thin films prepared from principally different deposition parameters leading to different particle features and morphologies.     

Nonlinear refractive index of some anthraquinone dyes in 1294-1b liquid crystal

Third order nonlinear refractive index of three anthraquinone dyes, i.e., Solvent Blue 59, Solvent Blue 35 and Solvent Green 3 doped in 1294-1b nematic liquid crystal (NLC) were studied by the single beam Z-scan technique using a continuous-wave He–Ne laser at 632.8 nm. The negative nonlinear refractive index (n₂) in the order of 10^? 5 cm²/w for all samples was obtained. We believe that, this large nonlinearity is owing to Janossy effect and the difference in the nonlinear refractive index of our dyes can be described by the structures of dyes and the interactions between dyes and 1294-1b molecules. So as to understand the effect of dye structure on nonlinearity enhancement, the dichroic ratio of these dyes in 1294-1b was measured using polarized spectroscopy.     

A novel active optical approach for acceleration measurement based on a Y-shaped cavity dual-frequency laser

A novel active optical approach for acceleration measurement based on a Y-shaped cavity dual-frequency laser is presented and demonstrated. Applied acceleration causes a change in the refractivity of sensing gas in one of the two cavities, resulting in a beat frequency variation between two orthogonal polarized lights. As a result, this approach produces a modulation of beat frequency strictly proportional to the input acceleration. Preliminary experiments with a 632.8 nm Y-shaped cavity He–Ne dual-frequency laser confirm the validity of the laser sensor. The experimental results show that the laser sensor in this approach characterizes a nearly linear response to the input acceleration, which is a projection of gravitational acceleration. The experimental values of the scale factors are mostly in good agreement with theoretical ones. By optimizing the optical and geometrical parameters of the laser sensor, an acceleration measurement resolution of 10^?5–10^?6 gravitational acceleration (within ±5 g measurement range) could be expected. Furthermore, we investigate the principle about the sign of the scale factor in detail, and propose a simple but efficient method to distinguish the direction of the acceleration acted on the laser sensor.     

Ultrastructural analysis of the low level laser therapy effects on the lesioned anterior tibial muscle in the Gerbil

Low level laser therapy (LLLT) is known for its positive results but studies on the biological and biomodulator characteristics of the effects produced in the skeletal muscle are still lacking. In this study the effects of two laser dosages, 5 or 10 J/cm², on the lesioned tibial muscle were compared. Gerbils previously lesioned by 100 g load impact were divided into three groups: GI (n = 5) controls, lesion non-irradiated; GII (n = 5), lesion irradiated with 5 J/cm² and GIII (n = 5), lesion irradiated with 10 J/cm², and treated for 7 consecutive days with a laser He–Ne (λ = 633 nm). After intracardiac perfusion, the muscles were dissected and reduced to small fragments, post-fixed in 1% osmium tetroxide, dehydrated in increasing alcohol concentrations, treated with propylene oxide and embedded in Spurr resin at 60 °C. Ultrafine cuts examined on a transmission electron microscope (Jeol 1010) revealed in the control GI group a large number of altered muscle fibers with degenerating mitochondria, intercellular substance containing degenerating cell fragments and budding blood capillaries with underdeveloped endothelial cells. However, groups GII and GIII showed muscle fibers with few altered myofibrils, regularly contoured mitochondria, ample intermembrane spaces and dilated mitochondrial crests. The clean intercellular substance showed numerous collagen fibers and capillaries with multiple abluminal processes, intraluminal protrusions and several pinocytic vesicles in endothelial cells. It was concluded that laser dosages of 5 or 10 J/cm² delivered by laser He–Ne (λ = 633 nm) during 7 consecutive days increase mitochondrial activity in muscular fibers, activate fibroblasts and macrophages and stimulate angiogenesis, thus suggesting effectivity of laser therapy under these experimental conditions.     

Ablation depth control with 40 nm resolution on ITO thin films using a square,flat top beam shaped femtosecond NIR laser

We reported on the ablation depth control with a resolution of 40 nm on indium tin oxide (ITO) thin film using a square beam shaped femtosecond (190 fs) laser (λ_p=1030 nm). A slit is used to make the square, flat top beam shaped from the Gaussian spatial profile of the femtosecond laser. An ablation depth of 40 nm was obtained using the single pulse irradiation at a peak intensity of 2.8 TW/cm². The morphologies of the ablated area were characterized using an optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS). Ablations with square and rectangular types with various sizes were demonstrated on ITO thin film using slits with varying x–y axes. The stereo structure of the ablation with the depth resolution of approximately 40 nm was also fabricated successfully using the irradiation of single pulses with different shaped sizes of femtosecond laser.     

Optical properties of amorphous Si/SiO2superlattice

Amorphous Si/SiO₂(a-Si/SiO₂) superlattices have been fabricated by the magnetron sputtering technique. The superlattice with an Si layer thickness of 1.8 nm has been characterized by transmission electron microscopy (TEM). The result indicates that most of the regions in the Si layer consist of amorphous phase, while regular structure appears in some local regions. This is in agreement with the Raman scattering spectroscopy. The optical absorption spectrum and photoluminescence (PL) spectrum have been measured. Moreover, the third-order optical nonlinearity χ⁽³⁾of this superlattice has been measured. To our knowledge, this is the first investigation of the nonlinear absorption and refractive index of an a-Si/SiO₂superlattice using the Z -scan technique. The real and imaginary parts of χ⁽³⁾have been found to be 1.316  ×  10 ^− 7eus and  − 5.596  ×  10 ^− 7eus, respectively, which are about two orders of magnitude greater than those of porous silicon. The results may be attractive for potential application in electro-optics devices.     

Optical parameters of In–Se and In–Se–Te thin amorphous films prepared by pulsed laser deposition

The thin films of materials based on In–Se are under study for their applicability in photovoltaic devices, solid-state batteries and phase-change memories.The amorphous thin films of In₂Se_3−xTe_x (x=0–1.5) and InSe were prepared by pulsed laser deposition method (PLD) using a KrF excimer laser beam (λ=248 nm, 0.5 J cm⁻²) from polycrystalline bulk targets. The compositions of films verified by energy-dispersive X-ray analysis (EDX) were close to the compositions of targets. The surfaces of PLD films containing small amount of droplets were viewed by optical and scanning electron microscopy (SEM).The optical properties (transmittance and reflectance spectra, spectral dependence of index of refraction, optical gap, single-oscillator energy, dispersion energy, dielectric constant) of the films were determined.The values of index of refraction increased with increasing substitution of Te for Se in In₂Se₃ films, the values of the optical gap decreased with increasing substitution of Te for Se in In₂Se₃ films.     

Optical absorption and dispersion characterizations of CuGaSe2 thin films prepared by flash evaporation technique

Thin films of CuGaSe₂ have been prepared by flash evaporation technique. The optical properties of the prepared films were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence of light in the wavelength range from 400 to 2500 nm. The optical constants as refractive index, n, and absorption index, k, were calculated and found to be independent of film thickness in the range of the film thickness 132–423 nm. The analysis of the photon energy against the absorption coefficient showed three direct optical transitions (one of them is allowed while the others are forbidden). This direct transition was ascribed to the crystal field and spin orbital splitting of the upper most valence band. The crystal field and spin orbital splitting of CuGaSe₂ were found to be ? 0.15 eV and 0.45 eV, respectively. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple–DiDomenico (WD) model. The single oscillator energy (E_o), the dispersion energy (E_d), the high frequency dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the ratio of free charge carrier concentration to the effective mass (N / m*) were estimated. The capacitance–voltage measurements of CuGaSe₂/p-Si heterojunction showed that the diode is abrupt junction diode. The carrier concentration and the built-in voltage were estimated. The current–voltage characteristics of the device under illumination were investigated and photovoltaic properties of the device were evaluated.     

Defects related emission and nanosecond optical power limiting in CuS quantum dots

We report optical and nonlinear optical properties of CuS quantum dots and nanoparticles prepared through a nontoxic, green, one-pot synthesis method. The presence of surface states and defects in the quantum dots are evident from the luminescent behavior and enhanced nonlinear optical properties measured using the open aperture Z-scan, employing 5 ns laser pulses at 532 nm. The quantum dots exhibit large effective third order nonlinear optical coefficients with a relatively lower optical limiting threshold of 2.3 J cm⁻², and the optical nonlinearity arises largely from absorption saturation and excited state absorption. Results suggest that these materials are potential candidates for designing efficient optical limiters with applications in laser safety devices.     

Influence of Cu doping on the microstructure,optical properties and photoluminescence features of Cd0.9Zn0.1S nanoparticles

Cd_0.9−xZn_0.1Cu_xS (0≤x≤0.06) nanoparticles were successfully synthesized by a conventional chemical co-precipitation method at room temperature. Crystalline phases and optical absorption of the nanoparticles have been studied by X-ray diffraction (XRD) and UV–visible spectrophotometer. XRD confirms the phase singularity of the synthesized material, which also confirmed the formation of Cd–Zn–Cu–S alloy nanocrystals rather than separate nucleation or phase formation. Elemental composition was examined by the energy dispersive X-ray analysis and the microstructure was examined by scanning electron microscope. The blue shift of absorption edge below Cu=2% is responsible for dominance of Cu⁺ while at higher Cu concentration dominated Cu²⁺, d–d transition may exist. It is suggested that the addition of third metal ion (Cu²⁺/Cu⁺) is an effective way to improve the optical property and stability of the Cd_0.9Zn_0.1S solid solutions. When Cu is introduced, stretching of Cd–Zn–Cu–S bond is shifted lower wave number side from 678 cm⁻¹ (Cu=0%) to 671 cm⁻¹ (Cu=6%) due to the presence of Cu in Cd–Zn–S lattice and also the size effect. The variation in blue band emission peak from 456 nm (∼2.72 eV) to 482 nm (∼2.58 eV) by Cu-doping is corresponding to the inter-band radiation combination of photo-generated electrons and holes. Intensity of red band emission centered at 656 nm significantly increased up to Cu=4%; beyond 4% it is decreased due to the quenching of Cu concentration.     

Effects of ultrasonic agitation and surfactant additive on surface roughness of Si (1 1 1) crystal plane in alkaline KOH solution

In the silicon wet etching process, the “pseudo-mask” formed by the hydrogen bubbles generated during the etching process is the reason causing high surface roughness and poor surface quality. Based upon the ultrasonic mechanical effect and wettability enhanced by isopropyl alcohol (IPA), ultrasonic agitation and IPA were used to improve surface quality of Si (1 1 1) crystal plane during silicon wet etching process. The surface roughness R_q is smaller than 15 nm when using ultrasonic agitation and R_q is smaller than 7 nm when using IPA. When the range of IPA concentration (mass fraction, wt%) is 5–20%, the ultrasonic frequency is 100 kHz and the ultrasound intensity is 30–50 W/L, the surface roughness R_q is smaller than 2 nm when combining ultrasonic agitation and IPA. The surface roughness R_q is equal to 1 nm when the mass fraction of IPA, ultrasound intensity and the ultrasonic frequency is 20%, 50 W and 100 kHz respectively. The experimental results indicated that the combination of ultrasonic agitation and IPA could obtain a lower surface roughness of Si (1 1 1) crystal plane in silicon wet etching process.     

Enhanced nonvolatile holographic properties in Zn,Ru and Fe co-doped LiNbO3 crystals

A series of LiNbO₃ crystals doped with various concentrations of ZnO and fixed concentrations of RuO₂ and Fe₂O₃ have been grown by the Czochralski method from the congruent melts. The type of charge carriers was determined by Kr⁺ laser (476 nm) and He–Ne laser (633 nm). The results revealed that the holes were the dominant charge carriers at blue light irradiation. Dual-wavelength and two-color techniques were employed to investigate the nonvolatile holographic storage properties of Ru:Fe:LiNbO₃ and Zn doped Ru:Fe:LiNbO₃ crystals. The essential parameters of blue nonvolatile holographic storage in Zn:Ru:Fe:LiNbO₃ crystals were enhanced greatly with the increase of Zn concentration. This indicates that the damage resistant dopants Zn²⁺ ions enhance the photorefractive properties at 476 nm wavelength instead of suppressing the photorefraction. The different mechanisms of blue photorefractive and nonvolatile holographic storage properties by dual wavelength recording in Zn:Ru:Fe:LiNbO₃ crystals were discussed.     

Transparent CdO/n-GaN(0001) heterojunction for optoelectronic applications

Undoped CdO films were prepared by sol–gel method. Transparent heterojunction diodes were fabricated by depositing n-type CdO films on the n-type GaN (0001) substrate. Current–voltage (I–V) measurements of the device were evaluated, and the results indicated a non-ideal rectifying characteristic with I_F/I_R value as high as 1.17×10³ at 2 V, low leakage current of 4.88×10⁻⁶ A and a turn-on voltage of about 0.7 V. From the optical data, the optical band gaps for the CdO film and GaN were calculated to be 2.30 eV and 3.309 eV, respectively. It is evaluated that interband transition in the film is provided by the direct allowed transition. The n-GaN (0001)/CdO heterojunction device has an optical transmission of 50–70% from 500 nm to 800 nm wavelength range.