一种结构新颖的L波段掺铒光纤激光器

提出了一种结构新颖的L波段环形腔掺铒光纤激光器。用掺铒光纤作为增益介,采用980nm激光器作为前向抽运源,利用起偏器和偏振控制器获得L波段激光,利用光环形器将后向的放大自发辐射再引入铒光纤的前端,重复利用。当抽运功率为103mW时得到了阈值功率约为23．87mW,输出功率达6．34mW的激光输出,斜率效率约为8．05％,与没有重复利用后向放大自发辐射谱的掺铒光纤激光器做比较,该结构对L波段掺铒光纤激光器的性能有明显的提升作用。对于长度不合适的铒纤,在没有重复利用后向放大自发辐射谱时没有获得激光输出;而在利用后向放大自发辐射后,在阈值功率约为88mW时得到了激光输出,从而很好地证明了上述结论。     

InGaAsP/GaAs SCH SQW laser arrays grown by LPE

InGaAsP/InGaP/GaAs separate confinement heterostructure (SCH) single quantum well (SQW) laser structures have been obtained by an improved liquid-phase epitaxy (LPE) process. Wide-contact stripe lasers have been fabricated with threshold current density below 300 A/cm² and cavity length of 800 μm. Finally, with the same grown wafers, 1-cm bar laser diode (LD) arrays are made with 150 μm wide stripes and a maximum fill factor of 30%. Continuous Wave (CW) power output of 20 W has been reached.     

Free-running emerald laser pumped by laser diode

Free-running emerald laser pumped by 660-nm laser diode (LD) was reported. Free-running output powerof 24 mW has been obtained with overall efficiency of 1.4% and slope efficiency of 11.9% when the LD incident power was 2.56 W. The laser threshold value of emerald crystal was estimated to be 0.7 W.     

880nm半导体激光主动照明光纤耦合模块

为降低半导体激光主动照明红曝,选择波长880 nm大功率半导体激光器作为新型激光主动照明成像系统光源。根据光纤耦合过程光参数积不变原理,研制出波长880 nm大功率半导体激光器阵列单光纤耦合模块,利用光纤匀光作用使激光光束匀化整圆后用于激光主动照明。首次在波长880 nm大功率半导体激光器上采用阶梯反射镜光束整形方法,使激光光参数积与光纤匹配,激光高效耦合进入纤芯400μm、数值孔径0.22的光纤。室温条件下光纤耦合模块连续输出功率44.9 W,电光转化效率35%,波长880 nm大功率半导体激光器阵列光纤耦合模块,不仅其红曝小而且对应CMOS图像传感器光谱响应度较高,系统成像质量好。     

Efficient quasi-three-level Nd:YAG laser at 946 nm pumped by a tunable external cavity tapered diode laser

Using a tunable external cavity tapered diode laser (ECDL) pumped quasi-three-level Nd:YAG laser, a fivefold reduction in threshold and twofold increase in slope efficiency is demonstrated when compared to a traditional broad area diode laser pump source. A TEM₀₀ power of 800 mW with 65% slope efficiency is obtained, the highest reported TEM₀₀ power from any 946 nm Nd:YAG laser pumped by a single emitter diode laser pump source. A quantum efficiency of 0.85 has been estimated from experimental data using a simple quasi-three-level model. The reported value is in good agreement with published values, suggesting that the model is adequate. Improvement of the 946 nm laser due to the ECDL's narrow spectrum proves to be less significant when compared to its spatial quality, inferring a broad spectrum tapered diode laser pump source may be most practical. Experimental confirmation of such setup is given.     

808nm半导体激光芯片电光转换效率的温度特性机理研究

提高808 nm大功率半导体激光器电光转换效率具有重要的学术意义和商业价值,是实现器件小型化、轻量化、高可靠性的必要前提.本文以腔长1.5 mm的传导冷却封装808 nm半导体激光阵列为研究对象,在热沉温度-40—25?C范围内对其进行光电特性测试,对不同温度下电光转换效率的影响因子进行了实验研究和理论分析.结果表明:在-40?C环境温度下,最高电光转换效率从室温25?C时的56.7%提高至66.8%,内量子效率高达96.3%,载流子泄漏损耗的占比贡献由16.6%下降至3.1%.该研究对实现808 nm高效率半导体激光芯片的自主研发具有重要意义.     

Thin Nd:YAG slab laser pumped by lens duct coupled diode laser stacks

High power continuous wave operation of a diode face-pumped thin Nd:YAG slab laser is reported. A novel pumping geometry for a thin Nd:YAG slab using cylindrical lens duct coupled diode laser stacks is demonstrated. In a close-coupled resonator, a maximum laser output power of 260 W in multimode operation is obtained. This corresponds to a slope efficiency of 34% and an optical-to-optical efficiency of 27%, respectively. In high-brightness operation, a polarized laser output of 70 W has been obtained with a beam quality factor close to 4 in both directions. The polarization contrast ratio is >100. PACS 42.55.Xi; 42.60.Pk; 42.60.By     

采用多波长光束组合改善二极管激光阵列的光束质量

 基于多波长光束组合技术,利用光栅的衍射和外腔的反馈,将二极管阵列的发光单元锁定在不同的波长上,相邻单元的出射光波长有微小的差异。从外腔耦合镜输出近似平行的光束,其光束质量等同于单个发光单元的光束质量,而组合光束亮度随着组合光束个数定标放大。实验中采用发光单元宽度为100 μm、填充因子为0.5、由49个单元构成的1 cm 阵列获得功率为2.39 W的输出光束,其光谱宽度为27 nm,远场光斑的直径为0.08 mm,对应的远场发散角为1.2 mrad,其光束质量因子约为28,与单个发光单元的光束质量相当。     

大功率半导体激光器阵列热串扰行为

以硬焊料传导制冷,30%填充因子半导体激光器阵列为例,建立了三维有限元模型,对阵列内部各发光单元之间的热串扰行为进行了分析研究。结果表明,当其连续波工作时间大于1.2 ms后,阵列内发光单元之间出现热串扰现象;当次热沉由CuW合金改为铜金刚石复合材料时,阵列内发光单元自热阻和相邻发光单元的串扰热阻降低,有效地降低了各发光单元之间的热串扰行为。保持阵列宽度、发光单元数目及发光单元周期不变,发现随阵列填充因子的增加,器件热阻以指数衰减趋势逐渐降低,而发光单元间的热串扰特性对此变化并不敏感;保持阵列单个发光单元输出功率,发光单元尺寸及阵列宽度不变,增加发光单元个数后,阵列内各发光单元之间热串扰加剧,填充因子越高阵列升温速率越快;但在最初约70 s内,包含不同数目发光单元的阵列最高温度差异仅约0.5 ℃,有利于多发光单元高填充因子器件高功率输出。     

Tm:Ho co-doped single mode optical fibre laser pumped by a 1600 nm Er fibre laser

An all-fibre Tm:Ho laser system is reported, using a 1600 nm Er fibre pump laser and 0.3 m length of the fibre through a two-stage optimization of both the pump source and laser configuration to achieve a low threshold operation. As a result a low threshold power of 33 mW and a slope efficiency of 0.6% have been achieved, in laser operation at a wavelength of 1870 nm and a cross-comparison with 785 nm laser diode pumping has been made.     

InGaN MQW violet laser diode performance with quaternary AlInGaN blocking layer

Violet laser diode performance with AlInGaN blocking layer has numerically been investigated by using ISE TCAD software simulation program. The effects of AlInGaN blocking layer have been studied from different perspectives, the threshold current, output power, optical intensity, and temperature characteristics. In this study, simulation results indicated that the use of AlGaInN instead of the conventional AlGaN blocking layer leads to decreasing the threshold current while this blocking layer increases the optical intensity and output power when the mole fractions of Al and Ga are carefully chosen. The laser diode survives above 370 K.     

Loss coefficient for amplified luminescence of laser diode arrays

A system of radiative transfer equations is used to calculate the loss coefficient for amplified luminescence fluxes propagating along and transverse to the cavity axis in the active layer of high-power laser diode arrays taking the spreading of charge carriers in the cladding and contact layers of InGaAs/GaAs/AlGaAs heterostructures into account. It is shown that the spreading of charge carriers leads to a significant change in the amplified luminescence flux which can contribute up to 18% to the lasing threshold of these laser diode arrays. The calculated loss coefficients can greatly simplify the determination of the amplified luminescence fluxes in laser diode arrays with an error of less that 16% and can be used to determine how much the amplified luminescence affects the power and dynamic characteristics of diode arrays.     

808 nm激光二极管阵列波长光束组合20 W输出

 基于多波长光束组合技术,利用光栅的衍射和外腔的反馈,将激光二极管阵列(LDA)发光单元锁定在不同的波长上,以近似平行光束沿光栅的-1级衍射方向组合输出,改善LDA输出光束质量。实验采用发光单元宽度为100 μm、周期为500 μm,由19个单元构成的1 cm普通商用LDA,在连续运行最大注入电流60.6 A时,自由运转输出功率49.8 W时,获得功率为20.1 W的组合光束稳定输出,其光谱宽度为15 nm,对应的远场发散角由约70 mrad变为1.66 mrad,改善后光束质量因子约为32,其值与单个发光单元的光束质量相当。     

半导体激光器列阵在外腔下的光谱特性

使用普通高反镜作为19个单元的半导体激光器列阵(LDA)的外腔,通过调节高反镜的位置和角度,使LDA发出的光反馈回有源层,从而压窄了输出光谱并降低了LDA的阈值电流.实验中,运行于外腔下的LDA在不同的驱动电流下的输出光谱均被压窄到了原来的1/10左右,阈值电流从7 A降到了5.5 A,并且在9 A的偏置电流下输出功率提高了2倍.     

High power AlGaInP laser diodes with zinc-diffused window mirror structure

The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/A1GaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.     

Self-contained LED-pumped single-crystal Nd: YAG fiber laser

Lasers have been made from Nd: YAG single crystals grown directly in the form of fibers. These fibers, 50 to 80 μm in diameter and 0.5 cm long, were pumped at 0.8 μm wavelength by a single AlGaAs LED. One milliwatt output power, plane polarized in a single mode at 1.064 μm wavelength, has been achieved in continuous room-temperature operation, and a self-contained laser-LED package has been demonstrated. Construction and operation of the devices are described. Improvement by a factor of two in operating efficiency using straightforward techniques is predicted to yield 1 mW output at a pump diode current of ∼ 75 mA and laser threshold at ∼ 10 mA pump current.     

5-W repetitively Q-switched Er:LuAG laser resonantly pumped by an erbium fiber laser

We report a high-average-power, near-diffraction-limited Er:LuAG laser generating 5 W of power at 1.648 microm in either cw or repetitively Q-switched operation. When the laser is Q switched at 9 kHz, we measure 0.52 mJ/pulse. The laser is end pumped by a 20-W erbium fiber laser and achieves >30% optical conversion efficiency and >40% incident slope efficiency. This is, to our knowledge, the highest performance (average power and conversion efficiency) obtained from a bulk solid-state erbium laser.     

Amplified luminescence in InGaAs/AlGaAs laser diode arrays at high pump levels

The development of amplified luminescence fluxes in powerful InGaAs/AlGaAs laser diode arrays (lasing wavelength 940–960 nm) has been studied experimentally and theoretically at pump levels above the threshold value. Flux density values for amplified luminescence propagation along (1.88⋅10⁹ W/m²) and across (1.21⋅10⁹ W/m²) the laser diode array cavity axis have been evaluated for the threshold pump level at room temperature (293 K). The contribution of the recombination rate induced by the amplified luminescence to the threshold current generation of the laser diode array reaches 7%. It has been shown that the amplified luminescence flux density is increased by 49% as the pump level rises from one to three threshold values.     

Amplified spontaneous emission and power amplification in high-power DF laser systems

Amplified spontaneous emission （ASE） always occurs in high-power DF laser systems with master oscillator-power amplifier （MOPA） configuration. ASE not only reduces the energy extraction efficiency of the laser system, but also negatively influences its heat management. The interaction between the ASE flux and the coherent laser flux, as well as the effect of ASE on cuboid DF amplifiers, is studied using a finite difference method and an iterative arithmetic. In addition, the influence of ASE on coherent laser amplification is discussed in detail.     

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

A KGd(WO?)? Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5.6 W of absorbed diode pump power, and output power up to 0.8 W at 1143 nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157 nm.