An efficient and high polarized single cavity Nd:YVO4 microchip laser

An efficient and high polarized microchip green laser with dual Nd:YVO4 crystals is reported. The microchip includes a half-monolithic Nd:YVO4-KTP chip and a second Nd:YVO4 crystal. With two 1 W diode lasers pumped, the output power of TEM₀₀ green laser is 430 mW, and the optical-to-optical conversion efficiency is nearly 21.5 %, when the c-axes of second Nd:YVO4 crystal rotated to 90° from the half-monolithic chip, the polarization ratio of output green laser is 130:1. This laser has the advantages of being simple and easily attainable at a low cost, and suitable for batch production.     

Non-Gaussian fundamental laser mode oscillation in end-pumped Nd:YVO4 microchip laser

Far-Field non-Gaussian fundamental transverse modes have been obtained in CW end-pumped Nd:YVO₄ microchip laser for particular cavity lengths. Such profiles appear at threshold and are not distorted when pump power increases but they strongly depend on the pump to mode size ratio. An implemented theoretical model qualitatively reproduces these transverse profiles. It is based on the hypothesis of diffraction effects of the resonant intra-cavity field on a Gaussian-gain profile. Dependence of the pump to mode size ratio on such profiles will be also theoretically explained.     

Self-Q-switched Nd:YVO4 microchip lasers

We have observed giant pulses from cw pumped, monolithic Nd:YVO(4) microchip lasers, several hundred times the cw level, with pulse lengths less than 2 ns, which cannot be accounted for by conventional gain switching. These pulses occur as the second longitudinal mode starts to oscillate and can be described by the inclusion of gain-related effects in the formation of a stable cavity.     

A compact efficient continuous-wave self-frequency Raman laser with a composite YVO4/Nd:YVO4/YVO4 crystal

We report a low-threshold continuous-wave self-Raman laser with a composite YVO₄/Nd:YVO₄/YVO₄ crystal. The use of the composite crystal can reduce the thermal effects and achieve the low-threshold and high Raman output operation. The Raman threshold is as low as 2.2 W for the 808-nm diode pump. Under the pump of a diode power of 25.5 W, the highest Raman output of 2.8 W is obtained at 1175 nm, corresponding to a slope efficiency of 12% and a diode-to-Stokes optical conversion efficiency of 11%. The power fluctuation is less than 1.1% under the highest Raman output.     

Study on optical characteristics of Nd:YVO4/YVO4 composite crystal laser

Thermal effect in crystals is the main obstacle blocking diode-pumped solid state laser to get high and stable output power. Diffusion bonding crystal has been demonstrated to be an effective method to relieve the thermal lensing theoretically based on the numerical heat analysis to the end-pumped anisotropic laser crystal. The temperature distributions in Nd:YVO4/YVO4 composite crystal and conventional crystal were analyzed and compared. The end-pumped Nd:YVO4/YVO4 composite crystal laser was designed and set up with z-cavity. The maximum output powers of 9.87 W at 1064 nm and 6.14 W at 532 nm were obtained at the incident pump power of 16.5 W. The highest optical-optical conversion efficiencies were up to 59.8% at 1064 nm and 37.2% at 532 nm respectively.     

Operational characteristics of dual gain single cavity Nd:YVO4 laser

Operational characteristics of a dual gain single cavity Nd:YVO₄ laser have been investigated. With semiconductor diode laser pump power of 2 W, 800 mW output was obtained with a slope efficiency of 49%. Further, by changing the relative orientation of the two crystals the polarization characteristics of the output could be varied. In particular by keeping the two Nd:YVO₄ crystals with their c-axes orthogonal to each other and adjusting the gain of the crystals so that both operate at approximately the same power level, completely unpolarized beams could be obtained.     

Second-Stokes YVO4/Nd:YVO4/YVO4 self-frequency Raman laser

We demonstrated an efficient second-Stokes Raman laser emission at 1313 nm based on self-frequency stimulated Raman scattering from a diode-end-pumped actively Q-switched YVO(4)/Nd:YVO(4)/YVO(4) laser at 1064 nm for the first time, to the authors' knowledge. A double-end diffusion-bonded Nd:YVO(4) composite crystal was adopted for sufficiently improving the thermal lensing effect in the course of self-frequency stimulated Raman scattering operation. With an incident pump power of 14.6 W and a pulse repetition (PRR) of 40 kHz, a maximum average output power of 2.34 W was obtained, corresponding to an optical-to-optical conversion efficiency of 16%. Pulse width and peak power were 1.2 ns and 49 kW, respectively.     

Intensity noise of injected Nd:YVO 4 microchip lasers

The combined effects of the pump noise suppression and injection locking technique on the intensity noise of a diode pumped Nd:YVO₄ microchip laser are theoretically and experimentally investigated. Complete cancellation of the relaxation oscillation peak is experimentally achieved. Very good agreement between experimental results and theoretical predictions of a fully quantum model describing lasers with injected signal is found. Received 10 December 2001 and Received in final form 6 March 2002     

A 15.1 W continuous wave TEM00 mode laser using a YVO4/Nd:YVO4 composite crystal

A effective continuous-wave (CW), high power laser generated using a YVO₄/Nd:YVO₄ composite crystal is presented. 18.8 W output power in multi-mode has been achieved with a maximum absorbed pump power of 31.2 W, corresponding to an optical-to-optical efficiency of 60.26%. In TEM₀₀ mode operation, 15.1 W output power also has been achieved with the maximum absorbed pump power of 31.2 W, corresponding to an optical-to-optical efficiency of 47.69%. With a 200 mm focal-length positive lens and using the moving knife-edge method, the beam quality factor is measured to be M² = 1.2 for TEM₀₀ mode beam.     

Low-power 100-ps microchip laser amplified by a two-stage Nd:YVO4 amplifier module

We report the amplification of a low-power 4-mW microchip Nd:YVO₄ laser at 1064?nm, passively Q-switched with a semiconductor saturable absorber mirror (SESAM). An end-pumped two-stage amplifier module with small-signal gain of 56?dB has been designed to boost the power, generating 6?W at 550?kHz with 100-ps pulses and M ²?=?1.2. Second-harmonic generation in critically phase-matched LBO yielded 3?W at 532?nm, with pulse stability comparable to that of the fundamental frequency.     

Passively Q-switched 1.34- mum Nd:YVO(4) microchip laser with semiconductor saturable-absorber mirrors

We demonstrate a passively Q -switched diode-pumped 1.34- microm Nd:YVO(4) microchip laser. We achieved single-frequency, 230-ps pulses by using an InGaAsP semiconductor saturable-absorber mirror. We can vary the pulse width and the repetition rate from 230ps to 12ns and from 30 kHz to 4 MHz, respectively, by changing the design parameters of the saturable absorber, the thickness of the crystal, and the pump power.     

Frequency-stabilized Nd:YVO4 thin-disk laser

We have developed a Nd:YVO₄ thin-disk laser at 914 nm with single-frequency operation and active frequency stabilization to a low-finesse reference cavity. The spectral density of laser frequency noise is analysed by means of noise measurements at the error point of the frequency control loop. To address the 3¹S₀→3³P₁ magnesium intercombination line at 457 nm, we use an external frequency doubling stage based on periodically poled KTiOPO₄ for the generation of more than 150-mW output power at 457 nm. Optical beat signal measurements at 457 nm with a frequency-stable dye laser show a short-time line width of the thin-disk laser of less than 100 kHz. PACS 42.55.Xi; 42.60.Lh; 42.62.Fi; 42.65.Ky     

激光二极管抽运Nd∶YVO4和KTP倍频产生单频绿光激发器

报道了一种激光二极管抽运、KTP倍频的Nd∶YVO4激光器,采用折叠腔,实现了稳定的高输出单频倍频运转,绿光输出功率达到102 mW,转换效率为10.7 %.     

Radially polarized laser beam from a Nd:YAG laser cavity with a c-cut YVO4 crystal

We demonstrate the generation of a radially polarized beam by simply inserting an undoped c-cut YVO₄ crystal into a Nd:YAG laser cavity. In a hemispherical cavity, the cylindrically symmetric, positive birefringence of the YVO₄ crystal extends the stability limit of the cavity length for an extraordinary ray (radial polarization) compared to an ordinary one (azimuthal polarization). By adjusting the cavity length, a radially polarized beam with an output power up to 1 W was selectively obtained. In addition, a higher-order transverse mode was also generated by arranging the cavity design. The method demonstrated in this paper can be readily applied to laser systems with an isotropic laser medium. PACS 42.60.Da; 42.25.Lc; 42.25.Ja     

高效率多程折叠Nd:YVO4激光放大器

采用具有近共焦、非稳腔特点的多程折叠光路结构,使激光光束多次通过增益介质,实现了高提取效率的激光放大器.实验中在注入22W种子激光的条件下,以43.9%的提取效率得到了63 W的激光输出,斜效率超过52%,激光放大器的输出光束质量从种子激光的M2X=2.08,M2Y=1.92变为M2X=2.84,M2Y=1.79.     

An 110 W Nd:YVO4 slab laser with high beam quality output

In this paper we report on experimental results of an end-pumped Nd:YVO₄ slab laser with a hybrid resonator. 110 W output power with beam propagation factor M² of 1.3 and 1.5 in two orthogonal directions was obtained. After a spatial filter the typical beam propagation factors at 50 W operation were 1.09 and 1.2.     

LD连续泵浦Nd:YVO4声光调Q激光器

 利用半导体激光器（LD）连续单端泵浦Nd:YVO₄晶体，实现了声光调Q输出1 064nm的短脉冲。分析并用实验验证了不同透过率输出耦合镜及不同重复频率条件下，输出调Q脉冲能量、脉冲宽度及平均输出功率的规律。在泵浦功率为20.7W，重复频率为50kHz时，获得了最大平均输出功率为5.72W的脉冲，光 光转换效率为28%，斜效率为32.4%；在重复频率为10kHz时，最大单脉冲能量为0.286mJ，脉宽为22ns，峰值功率为13kW。     

LD连续泵浦Nd:YVO4声光调Q激光器

利用半导体激光器（LD）连续单端泵浦Nd:YVO4晶体,实现了声光调Q输出1 064nm的短脉冲。分析并用实验验证了不同透过率输出耦合镜及不同重复频率条件下,输出调Q脉冲能量、脉冲宽度及平均输出功率的规律。在泵浦功率为20.7W,重复频率为50kHz时,获得了最大平均输出功率为5.72W的脉冲,光 光转换效率为28%,斜效率为32.4%;在重复频率为10kHz时,最大单脉冲能量为0.286mJ,脉宽为22ns,峰值功率为13kW。     

LD-pumped Q-switched Nd:YVO4 self-Raman laser

LD-pumped actively Q-switched Nd:YVO₄ self-Raman laser is presented. The maximum average output power of the self-Raman laser at 1173.6 nm was obtained to be 2.21 W at the incident pump power of 18 W and the pulse repetition frequency (PRF) of 30 kHz, with the corresponding optical conversion efficiency of 12.28%.