HfO2/SiO2高反膜、增透膜及偏振膜的1 064 nm激光损伤特性

高反膜、增透膜和偏振膜是Nd∶YAG激光器中的关键薄膜元件 ,其抗激光损伤能力直接影响到激光器的输出能量和功率。由于优异的物理化学性能 ,高功率Nd∶YAG激光器的光学薄膜一般采用HfO2 /SiO2 膜料组合镀制 ,因而用此膜料镀制的光学薄膜的激光损伤特性是薄膜工作者重点关注的问题。对光学中心APS15 0 4镀膜机镀制的HfO2 /SiO2 高反膜、增透膜和偏振膜等开展了 10 64nm的激光损伤实验研究 ,用 2 0 0倍的Normaski显微镜详细分析了高反 ,增透和偏振膜的激光损伤图貌 ,发现对于脉宽为 10ns波长的 10 64nm的激光而言 ,高反膜基本表现为孔洞和等离子体烧蚀疤痕 ,孔洞是由薄膜中的节瘤 (nodular)缺陷的激光损伤引起的 ,损伤的能流密度较低 ,为薄膜的零损伤阈值密度。疤痕为薄膜的激光等离子体烧伤引起的 ,尺寸大小与激光能量密度成近似正比。增透膜一般为双面镀 ,分前后膜堆两种情况 ,前膜堆表现为孔洞和疤痕 ,与高反膜相似 ;后膜堆为孔洞型的小圆麻点聚积 ,麻点处的薄膜完全剥落 ,没有疤痕等烧伤痕迹 ,是激光在基片之间形成的驻波电场损毁 ,损伤阈值比前膜堆低 1 5倍 ,决定着增透膜的损伤阈值。偏振膜的低能量密度损伤与增透膜后膜堆相似 ,表现为孔洞型小麻点聚积 ,损伤处未见疤痕等烧蚀痕迹。对薄膜小尺度损?     

Third-order nonlinear optical response of silicon nanostructures dispersed in organic solvent under 1064 nm and 532 nm laser excitations

Silicon nanostructures are dispersed into an organic solvent and the third order optical properties of the system are studied by z-scan technique under 1064 nm and 532 nm excitations. The experiment results show that the silicon nanostructures exhibit self-focus and saturable absorption with both excitation wavelengths. Nonlinear absorption results suggest that a new optical bleaching band exists under 532 nm excitation, and a two-step mechanism is tentatively put forward to explain the saturable absorption under 1064 nm excitation.     

Effect of native defects and laser-induced defects on multi-shot laser-induced damage in multilayer mirrors

The roles of laser-induced defects and native defects in multilayer mirrors under multi-shot irradiation condition are investigated. The HfO 2 /SiO 2 dielectric mirrors are deposited by electron beam evaporation(EBE) . Laser damage testing is carried out on both the 1-on-1 and S-on-1 regimes using 355-nm pulsed laser at a duration of 8 ns. It is found that the single-shot laser-induced damage threshold(LIDT) is much higher than the multi-shot LIDT. In the multi-shot mode,the main factor influencing LIDT is the accumulation of irreversible laser-induced defects and native defects. The surface morphologies of the samples are observed by optical microscopy. Moreover,the number of laser-induced defects affects the damage probability of the samples. A correlative model based on critical conduction band(CB) electron density(ED) is presented to simulate the multi-shot damage behavior.     

Single- and multi-shot laser-induced damages of Ta_2O_5/SiO_2 dielectric mirrors at 1064 nm

Ta2O5/SiO2 dielectric mirrors deposited by ion beam sputtering (IBS) are studied. The multi-shot laserinduced damage threshold (LIDT) and its dependence on the number of shots are investigated, after which we find that the multi-shot LIDT is lower than that of single-shot. The accumulation effects of defects play an important role in the multi-shot laser damage. A simple model, which includes the conduction band electron production vsa multiphoton and impact ionizations, is presented to explain the experimental phenomena.     

降雨对532nm和1064nm激光传输的衰减特性研究

降雨会对激光信号产生严重的衰减,从而给激光目标探测的应用带来一定影响.激光在降雨中的传输衰减已在红外波段做了大量的实验研究,而可见光波段激光在雨中的传输衰减特性还未见报道.基于夫琅禾费衍射和几何光学散射理论,建立雨滴对532 nm绿激光和1064 nm近红外激光光束的传输衰减模型,对比分析两波长激光在不同降雨量下的衰减...     

Laser-ionization mass-spectrometric studies on laser ablation of a nitrogen-rich polymer at 532 nm and 1064 nm

Laser-ionization Time-Of-Flight (TOF) mass-spectrometric studies have been carried out on the 532 nm and 1064 nm laser ablation products from a nitrogen-rich polymer. The polymer used had an elemental composition of C_6.0N_8.9H_3.4 and consisted of C=N, C-N, and N-H chemical bonds. The TOF mass spectra observed were composed of various peaks (150 amu) depending on the ablation laser wavelength. The primary peaks were assigned to C⁺, CN⁺, CHnN⁺ ₂ (n=1–3) and C₂H₂N⁺ ₃ for 532 nm ablation, and C⁺, C⁺ ₃, HCN⁺, HCCN⁺, CH₂NH⁺, HNCN⁺, H₃NCN⁺, and C₄H₄N⁺ ₇ for 1064 nm ablation. The flight velocity distributions with peak velocities ranging from 8.6×10³ cm/s to 3.8×10⁴ cm/s were measured for these products. The distinct velocity distributions observed between small and large products indicate the presence of two origins in the fragment ejection process from the polymer for both 532 nm and 1064 nm ablation. Furthermore, we suggest an importance of the translational energy of the fragments for the product generation in the laser plume.     

Multiscale analysis of single- and multiple-pulse laser-induced damages in HfO_2/SiO_2 multilayer dielectric films at 532 nm

Nanosecond single- and multiple-pulse laser damage studies on Hf O2∕Si O2high-reflection(HR) coatings are performed at 532 nm. For single-pulse irradiation, the damage is attributed to the defects and the electric intensity distribution in the multilayer thin films. When the defect density in the irradiated area is high, delamination is observed. Other than the 1064 nm laser damage, the plasma scalding of the 532 nm laser damage is not pits-centered for normal incidence, and the size of the plasma scalding has no relation to the defect density and position, but increases with the laser fluence. For multiple-pulse irradiations, some damage sites show deeper precursors than those from the single-shot irradiation due to the accumulation effects. The cumulative laserinduced damages behave as pits without the presence of plasma scalding, which is unaffected by the laser fluence and shot numbers. The damage morphologies and depth information both confirm the fatigue effect of a Hf O2∕Si O2 HR coating under 532 nm laser irradiation.     

表面层对1 064 nm高反射镜损伤阈值影响

 采用电子束蒸发的方法制备了３种具有不同表面层材料及结构的中心波长为1 064 nm的零度高反镜,３种膜系表面层分别为1/4波长光学厚度的HfO₂,1/2波长光学厚度的SiO₂,以及1/4波长光学厚度的SiO₂。光谱测试表明：三者在1 064 nm处均有较高的反射率（高于99.8%）,利用热透镜的方法测量得到３个膜系辐照激光正入射情况下,薄膜对光的吸收比例分别为3.0×10^-6,5.0×10^-6和6.5×10^-6,其损伤阈值分别为32.5,45.2和28.4 J/cm²。并在膜层内部电场分布和膜层材料物理特性的基础上分析了３种不同表面层膜系吸收和损伤阈值差别的原因。     

Laser-induced damage threshold in n-on-1 regime of Ta2O5 films at 532, 800, and 1064 nm

Ta2O5 films were prepared with conventional electron beam evaporation and annealed in O2 at 673 K for 12 h. Laser-induced damage thresholds (LIDTs) of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly, and then were performed at 532, 800, and 1064 nm in n-on-1 regime, respectively.The results showed that the LIDTs in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm. In addition, in n-on-1 regime, the LIDT increased with the increase of wavelength. Furthermore, both the optical property and LIDT of Ta2O5 films were influenced by annealing in O2.     

Dual-wavelength laser operation at 1064 and 914 nm in two Nd:YVO<Subscript>4</Subscript> crystals

We present for the first time a dual-wavelength laser operation at 1064 and 914 nm in two NdYVO₄ crystals. A 879 nm laser diode is used to pump the first Nd:YVO₄ crystal emitting at 914 nm, and the second Nd:YVO₄ laser emitting at 1064 nm intracavity pumped at 914 nm. A total output power of 4.28 W at the two fundamental wavelengths was achieved at the absorbed pump power of 13.8 W. The M² values for 914 and 1064 nm lights at the maximum output power were found to be around 1.3 and 1.1, respectively.     

三硼酸锂晶体上1064 nm,532 nm,355 nm三倍频增透膜的设计

采用矢量法设计了三硼酸锂晶体上1064 nm、532 nm和355 nm三倍频增透膜,结果表明1064 nm、532 nm和355 nm波长的剩余反射率分别为0.0017%、0.0002%和0.0013%。根据误差分析,薄膜制备时沉积速率精度控制在 5.5%时,1064 nm、532 nm和355 nm波长的剩余反射率分别增加至0.20%、0.84%和1.89%。当材料折射率的变化控制在 3%时,1064 nm处的剩余反射率增大为0.20%,532 nm和355 nm处分别达0.88%和0.24%。与薄膜物理厚度相比,膜层折射率对剩余反射率的影响大。对膜系敏感层的分析表明,在1064 nm和355 nm波长,从入射介质向基底过渡的第二层膜的厚度变化对剩余反射率的影响最大,其次是第一膜层。在532 nm波长,第一和第三膜层是该膜系的敏感层。同时发现,由于薄膜材料的色散,1064 nm5、32 nm和355 nm波长的剩余反射率分别增加至0.15%、0.31%和1.52%。     

Design of multi-layer mirrors for measuring optical phase modulation at 1300 nm

A theoretical design and experimental realization of multi-layer mirrors for Fabry–Perot interferometry and optical telecommunications is described in this work. The mirrors were designed and fabricated by 13 successive thin layers to achieve very high reflectance at optical wavelengths around 1300 nm. Thin layers are ZnS and MgF₂ presenting high and low refractive index, respectively. Layer thickness λ_o/2 at λ_o=656 nm. Experimental results include characterization of transmittance of mirrors around 1300 nm. Additionally, the mirrors were integrated in a Fabry–Perot interferometer to characterize optical sources emitting at 1300 nm. Finally to show a practical application, optical phase modulation was analyzed, using the fabricated mirrors through a scanning Fabry–Perot interferometer acting as high-resolution optical spectrum analyzer (OSA).     

532nm长脉冲激光致GaAs热分解损伤的半解析法分析

考虑到GaAs具有受热分解的特性,采用热传导理论和半解析法研究了波长532nm的毫秒量级长脉冲激光致GaAs的表面热分解损伤．首先,建立了激光辐照GaAs的二维轴对称瞬态温度场及表面热分解损伤阈值的计算模型,模拟了吸收率不同时,GaAs的瞬态温度场分布及热分解损伤阈值．计算结果表明：较高的吸收率引起GaAs表面的温升较高,但所需的热分解损伤阈值较低;增加作用激光能量密度,GaAs表面发生热分解损伤随之提前．本文研究结果对激光与GaAs相互作用及其损伤机理的研究具有指导意义和实用价值．     

Electrical field enhancement and laser damage growth in high-reflective coatings at 1064 nm

The effect of electric field enhancement on damage growth of flat bottom pit and nodule-ejected pit was studied based on the finite difference time domain method and temperature field theory. The electric field enhancement around the edge of damage pits indeed exists and varies from 1.2 to 2.0 times. It is found that damage growth not only depends on the electric field enhancement but also the local absorptive coefficient by temperature field calculation. The results also meet the reported damage growth behavior very well. A conclusion can be drawn that field enhancement and potential defects or new generated defects during former pulses are jointly responsible for the damage growth. In addition, an inference can be drawn from theoretical analysis that the flat bottom pit has been initiated by absorbing defect located at the H-L interfaces, which the peaks of electrical field happen to.     

LBO晶体上1064 nm,532 nm二倍频增透膜的制备和性能

采用电子束蒸发方法在三硼酸锂(LBO)晶体上制备了1064 nm,532 nm二倍频增透膜.利用Lambda900分光光度计、MTSNanoIndenter纳米力学综合测试系统以及调Q脉冲激光装置对样品的光学性能、附着力和激光损伤阈值进行了分析测试.结果表明,通过多次实验,不断改进薄膜沉积工艺条件,在LBO晶体上获得了综合性能优异的二倍频增透膜.样品在1064 nm,532 nm波长的剩余反射率分别为0.07%和0.16%,薄膜粘附失效的临界附着力和激光损伤阈值分别为137.4 mN和15.14 J/cm2,薄膜激光损伤发生在Al2O3膜层.     

Breakdown limits of optical multimode fibers for the application of nanosecond laser pulses at 532 nm and 1064 nm wavelength

For many applications, optical multimode fibers are used for the transmission of powerful laser radiation. High light throughput and damage resistance are desirable. Laser-induced breakdown at the end faces of fibers can limit their performance. Therefore, the determination of laser-induced damage thresholds (LIDT) at the surface of fibers is essential.Nanosecond (1064 nm and 532 nm wavelength) single-shot LIDT were measured according to the relevant standard on SiO₂ glass preforms (Suprasil F300) as basic materials of the corresponding fibers. For 10 kinds of fused silica fibers (FiberTech) with core diameters between 180 μm and 600 μm, an illumination approach utilizing a stepwise increase of the laser fluence on a single spot was used. For both wavelengths, the LIDT values (0% damage probability) obtained by means of the two methods were compared. The influence of surface preparation (polishing) on damage resistance was investigated. For equal surface finishing, a correlation between drawing speed of the fibers and their surface LIDT values was found. In addition to the surface measurements, bulk LIDT were determined for the preform material.     

Laser Shock Processing of 6061-T6 Al alloy with 1064 nm and 532 nm wavelengths

Laser Shock Processing (LSP) has been proposed as a competitive alternative technology to classical treatments for improving fatigue and wear resistance of metals. We present a configuration and results in the LSP concept for metal surface treatments in underwater laser irradiation at 532 nm and 1064 nm. The purpose of the work is to compare the effect of both wavelengths on the same material. A convergent lens is used to deliver 1.2 J/pulse (1064 nm) and 0.9 J/pulse (532 nm) in a 8 ns laser FWHM pulse produced by 10 Hz Q-switched Nd:YAG laser with spots of a 1.5 mm in diameter moving forward along the work piece. A LSP configuration with experimental results using a pulse density of 2500 pulses/cm² and 5000 pulses/cm² in 6061-T6 aluminum samples are presented. High level compressive residual stresses are produced using both wavelengths. It has been shown that surface residual stress level is comparable to that achieved by conventional shot peening, but with greater depths. This method can be applied to surface treatment of final metal products.     

Modifications of AISI 1045 steel by picosecond Nd:YAG laser at 266 nm; comparison with 532 and 1064 nm pulses

Interaction of Nd:YAG laser, operating at 266 nm wavelength and a pulse duration of 40 ps, with AISI 1045 steel was studied. Surface damage threshold was estimated to be 0.14 J/cm². The steel surface modification was studied at the laser fluence of ∼1.0 J/cm². The energy absorbed from Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects, such as melting, vaporization of the molten material, shock waves, etc. The following AISI 1045 steel surface morphological changes and processes were observed: (i) intensive damage of the target in the central zone of irradiated area; (ii) appearance of periodic surface structures at nano-level, with periodicity in agreement with the used wavelength; (iii) reduction of oxygen concentration in irradiated area; and (iv) development of plasma in front of the target. Generally, interaction of laser beam with AISI 1045 steel (at 266 nm) results in a near-instantaneous creation of damage, meaning that large steel surfaces can be modified in short times.     

Cluster-assisted generation of multiply charged ions in nanosecond laser ionization of seeded furan beam at 532 and 1064 nm

The multiply charged ions of C ^{q +} (q ≤ 4), O ^{q +} (q ≤ 6) were produced when a furan cluster beam interacted with nanosecond 1064 and 532 nm lasers at intensities of 10¹⁰–10¹² W/cm². It is shown that O⁶⁺ and C⁴⁺ ions were the dominant multiply charged species at 1064 nm, while C²⁺, C³⁺, O²⁺, O³⁺ ions were the main multiply charged species at 532 nm. By varying the electric field in the extraction region of the time of flight mass spectrometer (TOFMS), two types of ions were extracted, one of which had large kinetic energy and narrow space distribution, and the other had small kinetic energy and broad space distribution. The formation channels for He-like ions of C⁴⁺ and O⁶⁺ are discussed.