1 064 nm高反射薄膜激光损伤阈值测量方法

 参照国际上对激光损伤阈值不同测量技术建立起来的相应检测规范和标准,分别采用1-on-1,S-on-1,R-on-1和光栅扫描共4种测量方式,在1 064 nm波长下对HfO₂/SiO₂周期性高反射薄膜进行了激光损伤阈值的测量研究。根据测量结果,比较并分析了这4种测量方式之间的差异,重点研究了R-on-1和光栅扫描测量方式中存在的激光预处理效应对薄膜损伤阈值的影响,以及辐照激光光斑尺寸与损伤阈值之间的联系,并讨论了光栅扫描方式中预处理效应与扫描间距和扫描能量密度梯度的关系。研究表明：R-on-1方式下测得的损伤阈值最高,光栅扫描和1-on-1次之,S-on-1最小;1 000个脉冲激光辐照下的累积效应不显著,并且在激光光斑尺寸的差异较小时,阈值与光斑尺寸的对应关系并不明显;光斑尺寸相同时,扫描光斑的间距越小,激光预处理效果越好。     

HfO_2/SiO_2高反膜、增透膜及偏振膜的1064nm激光损伤特性

高反膜、增透膜和偏振膜是Nd∶YAG激光器中的关键薄膜元件 ,其抗激光损伤能力直接影响到激光器的输出能量和功率。由于优异的物理化学性能 ,高功率Nd∶YAG激光器的光学薄膜一般采用HfO2 /SiO2 膜料组合镀制 ,因而用此膜料镀制的光学薄膜的激光损伤特性是薄膜工作者重点关注的问题。对光学中心APS15 0 4镀膜机镀制的HfO2 /SiO2 高反膜、增透膜和偏振膜等开展了 10 64nm的激光损伤实验研究 ,用 2 0 0倍的Normaski显微镜详细分析了高反 ,增透和偏振膜的激光损伤图貌 ,发现对于脉宽为 10ns波长的 10 64nm的激光而言 ,高反膜基本表现为孔洞和等离子体烧蚀疤痕 ,孔洞是由薄膜中的节瘤 (nodular)缺陷的激光损伤引起的 ,损伤的能流密度较低 ,为薄膜的零损伤阈值密度。疤痕为薄膜的激光等离子体烧伤引起的 ,尺寸大小与激光能量密度成近似正比。增透膜一般为双面镀 ,分前后膜堆两种情况 ,前膜堆表现为孔洞和疤痕 ,与高反膜相似 ;后膜堆为孔洞型的小圆麻点聚积 ,麻点处的薄膜完全剥落 ,没有疤痕等烧伤痕迹 ,是激光在基片之间形成的驻波电场损毁 ,损伤阈值比前膜堆低 1 5倍 ,决定着增透膜的损伤阈值。偏振膜的低能量密度损伤与增透膜后膜堆相似 ,表现为孔洞型小麻点聚积 ,损伤处未见疤痕等烧蚀痕迹。对薄膜小尺度损?     

Third-order nonlinear optical response of silicon nanostructures dispersed in organic solvent under 1064 nm and 532 nm laser excitations

Silicon nanostructures are dispersed into an organic solvent and the third order optical properties of the system are studied by z-scan technique under 1064 nm and 532 nm excitations. The experiment results show that the silicon nanostructures exhibit self-focus and saturable absorption with both excitation wavelengths. Nonlinear absorption results suggest that a new optical bleaching band exists under 532 nm excitation, and a two-step mechanism is tentatively put forward to explain the saturable absorption under 1064 nm excitation.     

Effect of native defects and laser-induced defects on multi-shot laser-induced damage in multilayer mirrors

The roles of laser-induced defects and native defects in multilayer mirrors under multi-shot irradiation condition are investigated. The HfO 2 /SiO 2 dielectric mirrors are deposited by electron beam evaporation(EBE) . Laser damage testing is carried out on both the 1-on-1 and S-on-1 regimes using 355-nm pulsed laser at a duration of 8 ns. It is found that the single-shot laser-induced damage threshold(LIDT) is much higher than the multi-shot LIDT. In the multi-shot mode,the main factor influencing LIDT is the accumulation of irreversible laser-induced defects and native defects. The surface morphologies of the samples are observed by optical microscopy. Moreover,the number of laser-induced defects affects the damage probability of the samples. A correlative model based on critical conduction band(CB) electron density(ED) is presented to simulate the multi-shot damage behavior.     

Single- and multi-shot laser-induced damages of Ta_2O_5/SiO_2 dielectric mirrors at 1064 nm

Ta2O5/SiO2 dielectric mirrors deposited by ion beam sputtering (IBS) are studied. The multi-shot laserinduced damage threshold (LIDT) and its dependence on the number of shots are investigated, after which we find that the multi-shot LIDT is lower than that of single-shot. The accumulation effects of defects play an important role in the multi-shot laser damage. A simple model, which includes the conduction band electron production vsa multiphoton and impact ionizations, is presented to explain the experimental phenomena.     

降雨对532nm和1064nm激光传输的衰减特性研究

降雨会对激光信号产生严重的衰减,从而给激光目标探测的应用带来一定影响.激光在降雨中的传输衰减已在红外波段做了大量的实验研究,而可见光波段激光在雨中的传输衰减特性还未见报道.基于夫琅禾费衍射和几何光学散射理论,建立雨滴对532 nm绿激光和1064 nm近红外激光光束的传输衰减模型,对比分析两波长激光在不同降雨量下的衰减...     

1064 nm和532 nm纳秒激光同时辐照熔石英损伤规律的研究

利用Nd: YAG激光器研究基频(1064 nm)与倍频(532 nm)单独辐照和同时辐照下熔石英的损伤规律,对损伤几率进行了测试,获得损伤几率曲线与典型损伤形貌。研究结果表明：双波长同时辐照下的初始损伤阈值总是小于单波长辐照下的初始损伤阈值;基频光中加入定量倍频光后,熔石英对基频光的吸收效率提高;并且双波长同时辐照下,熔石英损伤密度增大;原因主要是熔石英表面缺陷对不同波长吸收机制的差异。     

Multiscale analysis of single- and multiple-pulse laser-induced damages in HfO_2/SiO_2 multilayer dielectric films at 532 nm

Nanosecond single- and multiple-pulse laser damage studies on Hf O2∕Si O2high-reflection(HR) coatings are performed at 532 nm. For single-pulse irradiation, the damage is attributed to the defects and the electric intensity distribution in the multilayer thin films. When the defect density in the irradiated area is high, delamination is observed. Other than the 1064 nm laser damage, the plasma scalding of the 532 nm laser damage is not pits-centered for normal incidence, and the size of the plasma scalding has no relation to the defect density and position, but increases with the laser fluence. For multiple-pulse irradiations, some damage sites show deeper precursors than those from the single-shot irradiation due to the accumulation effects. The cumulative laserinduced damages behave as pits without the presence of plasma scalding, which is unaffected by the laser fluence and shot numbers. The damage morphologies and depth information both confirm the fatigue effect of a Hf O2∕Si O2 HR coating under 532 nm laser irradiation.     

Laser-ionization mass-spectrometric studies on laser ablation of a nitrogen-rich polymer at 532 nm and 1064 nm

Laser-ionization Time-Of-Flight (TOF) mass-spectrometric studies have been carried out on the 532 nm and 1064 nm laser ablation products from a nitrogen-rich polymer. The polymer used had an elemental composition of C_6.0N_8.9H_3.4 and consisted of C=N, C-N, and N-H chemical bonds. The TOF mass spectra observed were composed of various peaks (150 amu) depending on the ablation laser wavelength. The primary peaks were assigned to C⁺, CN⁺, CHnN⁺ ₂ (n=1–3) and C₂H₂N⁺ ₃ for 532 nm ablation, and C⁺, C⁺ ₃, HCN⁺, HCCN⁺, CH₂NH⁺, HNCN⁺, H₃NCN⁺, and C₄H₄N⁺ ₇ for 1064 nm ablation. The flight velocity distributions with peak velocities ranging from 8.6×10³ cm/s to 3.8×10⁴ cm/s were measured for these products. The distinct velocity distributions observed between small and large products indicate the presence of two origins in the fragment ejection process from the polymer for both 532 nm and 1064 nm ablation. Furthermore, we suggest an importance of the translational energy of the fragments for the product generation in the laser plume.     

表面层对1 064 nm高反射镜损伤阈值影响

 采用电子束蒸发的方法制备了３种具有不同表面层材料及结构的中心波长为1 064 nm的零度高反镜,３种膜系表面层分别为1/4波长光学厚度的HfO₂,1/2波长光学厚度的SiO₂,以及1/4波长光学厚度的SiO₂。光谱测试表明：三者在1 064 nm处均有较高的反射率（高于99.8%）,利用热透镜的方法测量得到３个膜系辐照激光正入射情况下,薄膜对光的吸收比例分别为3.0×10^-6,5.0×10^-6和6.5×10^-6,其损伤阈值分别为32.5,45.2和28.4 J/cm²。并在膜层内部电场分布和膜层材料物理特性的基础上分析了３种不同表面层膜系吸收和损伤阈值差别的原因。     

Laser-induced damage threshold in n-on-1 regime of Ta2O5 films at 532, 800, and 1064 nm

Ta2O5 films were prepared with conventional electron beam evaporation and annealed in O2 at 673 K for 12 h. Laser-induced damage thresholds (LIDTs) of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly, and then were performed at 532, 800, and 1064 nm in n-on-1 regime, respectively.The results showed that the LIDTs in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm. In addition, in n-on-1 regime, the LIDT increased with the increase of wavelength. Furthermore, both the optical property and LIDT of Ta2O5 films were influenced by annealing in O2.     

Dual-wavelength laser operation at 1064 and 914 nm in two Nd:YVO<Subscript>4</Subscript> crystals

We present for the first time a dual-wavelength laser operation at 1064 and 914 nm in two NdYVO₄ crystals. A 879 nm laser diode is used to pump the first Nd:YVO₄ crystal emitting at 914 nm, and the second Nd:YVO₄ laser emitting at 1064 nm intracavity pumped at 914 nm. A total output power of 4.28 W at the two fundamental wavelengths was achieved at the absorbed pump power of 13.8 W. The M² values for 914 and 1064 nm lights at the maximum output power were found to be around 1.3 and 1.1, respectively.     

三硼酸锂晶体上1064 nm,532 nm,355 nm三倍频增透膜的设计

采用矢量法设计了三硼酸锂晶体上1064 nm、532 nm和355 nm三倍频增透膜,结果表明1064 nm、532 nm和355 nm波长的剩余反射率分别为0.0017%、0.0002%和0.0013%。根据误差分析,薄膜制备时沉积速率精度控制在 5.5%时,1064 nm、532 nm和355 nm波长的剩余反射率分别增加至0.20%、0.84%和1.89%。当材料折射率的变化控制在 3%时,1064 nm处的剩余反射率增大为0.20%,532 nm和355 nm处分别达0.88%和0.24%。与薄膜物理厚度相比,膜层折射率对剩余反射率的影响大。对膜系敏感层的分析表明,在1064 nm和355 nm波长,从入射介质向基底过渡的第二层膜的厚度变化对剩余反射率的影响最大,其次是第一膜层。在532 nm波长,第一和第三膜层是该膜系的敏感层。同时发现,由于薄膜材料的色散,1064 nm5、32 nm和355 nm波长的剩余反射率分别增加至0.15%、0.31%和1.52%。     

Design of multi-layer mirrors for measuring optical phase modulation at 1300 nm

A theoretical design and experimental realization of multi-layer mirrors for Fabry–Perot interferometry and optical telecommunications is described in this work. The mirrors were designed and fabricated by 13 successive thin layers to achieve very high reflectance at optical wavelengths around 1300 nm. Thin layers are ZnS and MgF₂ presenting high and low refractive index, respectively. Layer thickness λ_o/2 at λ_o=656 nm. Experimental results include characterization of transmittance of mirrors around 1300 nm. Additionally, the mirrors were integrated in a Fabry–Perot interferometer to characterize optical sources emitting at 1300 nm. Finally to show a practical application, optical phase modulation was analyzed, using the fabricated mirrors through a scanning Fabry–Perot interferometer acting as high-resolution optical spectrum analyzer (OSA).     

532nm长脉冲激光致GaAs热分解损伤的半解析法分析

考虑到GaAs具有受热分解的特性,采用热传导理论和半解析法研究了波长532nm的毫秒量级长脉冲激光致GaAs的表面热分解损伤．首先,建立了激光辐照GaAs的二维轴对称瞬态温度场及表面热分解损伤阈值的计算模型,模拟了吸收率不同时,GaAs的瞬态温度场分布及热分解损伤阈值．计算结果表明：较高的吸收率引起GaAs表面的温升较高,但所需的热分解损伤阈值较低;增加作用激光能量密度,GaAs表面发生热分解损伤随之提前．本文研究结果对激光与GaAs相互作用及其损伤机理的研究具有指导意义和实用价值．     

13 nm窄带Si/Mo/C多层膜反射镜

基于多层膜准单色覆盖50~1500 eV能谱的多能点发射光谱测量系统可获得聚龙一号装置Z-pinch等离子体X射线源的能谱结构和总能量等信息。考虑装置的条件,在13 nm处的多层膜需要工作在掠入射角60。常规的Mo/Si多层膜尽管反射率最高,但其带宽较大,不能满足多层膜准单色的要求。因此提出将Mo和C共同作为多层膜的吸收层材料与Si组成Si/Mo/C多层膜,可使反射率降低较小而带宽明显减小。采用磁控溅射方法制备了Si/Mo/C多层膜,其掠入射X射线反射测量表面多层膜的结构清晰完整,同步辐射工作条件下反射率测量,得到Si/Mo/C多层膜在13 nm处和掠入射角60时的反射率为56.5%,带宽为0.49 nm（3.7 eV）。     

Electrical field enhancement and laser damage growth in high-reflective coatings at 1064 nm

The effect of electric field enhancement on damage growth of flat bottom pit and nodule-ejected pit was studied based on the finite difference time domain method and temperature field theory. The electric field enhancement around the edge of damage pits indeed exists and varies from 1.2 to 2.0 times. It is found that damage growth not only depends on the electric field enhancement but also the local absorptive coefficient by temperature field calculation. The results also meet the reported damage growth behavior very well. A conclusion can be drawn that field enhancement and potential defects or new generated defects during former pulses are jointly responsible for the damage growth. In addition, an inference can be drawn from theoretical analysis that the flat bottom pit has been initiated by absorbing defect located at the H-L interfaces, which the peaks of electrical field happen to.     

LBO晶体上1064 nm,532 nm二倍频增透膜的制备和性能

采用电子束蒸发方法在三硼酸锂(LBO)晶体上制备了1064 nm,532 nm二倍频增透膜.利用Lambda900分光光度计、MTSNanoIndenter纳米力学综合测试系统以及调Q脉冲激光装置对样品的光学性能、附着力和激光损伤阈值进行了分析测试.结果表明,通过多次实验,不断改进薄膜沉积工艺条件,在LBO晶体上获得了综合性能优异的二倍频增透膜.样品在1064 nm,532 nm波长的剩余反射率分别为0.07%和0.16%,薄膜粘附失效的临界附着力和激光损伤阈值分别为137.4 mN和15.14 J/cm2,薄膜激光损伤发生在Al2O3膜层.     

Breakdown limits of optical multimode fibers for the application of nanosecond laser pulses at 532 nm and 1064 nm wavelength

For many applications, optical multimode fibers are used for the transmission of powerful laser radiation. High light throughput and damage resistance are desirable. Laser-induced breakdown at the end faces of fibers can limit their performance. Therefore, the determination of laser-induced damage thresholds (LIDT) at the surface of fibers is essential.Nanosecond (1064 nm and 532 nm wavelength) single-shot LIDT were measured according to the relevant standard on SiO₂ glass preforms (Suprasil F300) as basic materials of the corresponding fibers. For 10 kinds of fused silica fibers (FiberTech) with core diameters between 180 μm and 600 μm, an illumination approach utilizing a stepwise increase of the laser fluence on a single spot was used. For both wavelengths, the LIDT values (0% damage probability) obtained by means of the two methods were compared. The influence of surface preparation (polishing) on damage resistance was investigated. For equal surface finishing, a correlation between drawing speed of the fibers and their surface LIDT values was found. In addition to the surface measurements, bulk LIDT were determined for the preform material.