Passively Q-switched fiber laser that uses saturable Raman gain

Operation of a short all-fiber passively Q-switched Raman laser pumped by a continuous-wave laser diode is experimentally demonstrated. The passively switched fiber laser consists simply of a double-clad ytterbium-doped silica fiber that is spliced directly to a moderately germanium-doped silica fiber. The placement of the Ge-doped silica fiber within the fundamental (Raman pump) cavity allows interplay between fundamental and Stokes fields to take place, which leads to saturation of the Raman gain as a result of pump depletion. Pulse widths of 70 and 60 ns at the first and second Stokes wavelengths of 1168 and 1232 nm, respectively, are produced at a stable 588 kHz repetition rate.     

Passively Q-switched diode-pumped Tm,Ho:LuVO_4 laser with a black phosphorus saturable absorber

We presented a passively Q-switched(PQS) diode-pumped c-cut Tm, Ho:LuVO_4 laser with a black phosphorus saturable absorber for the first time.Under PQS mode, an average output power of 0.86 W and a peak power of 2.32 W were acquired from the Tm, Ho:LuVO_4 laser with the pump power of 14.55 W, corresponding to a pulse width of 2.89 μs,a pulse repetition rate of 71.84 kHz, and a pulse energy of about 6.70 μJ.     

Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO₄ laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 μJ, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz.     

Efficient subnanosecond diode-pumped passively Q-switched Nd:YVO4 self-stimulated Raman laser

Generation of efficient subnanosecond self-stimulated Raman pulses by a diode-pumped passively Q-switched Nd:YVO4/Cr4+:YAG laser is demonstrated. Experimental results reveal that self-frequency Raman conversion can be achieved with a c-cut Nd:YVO4 crystal in a nearly hemispherical cavity. At 2.0 W of incident pump power, the self-stimulated Raman laser produces stable 710-ps pulses at a Stokes wavelength of 1178.6 nm with 7.2 microJ of pulse energy at a 17-kHz repetition rate.     

Passively Q-switched Tm:YLF laser

Stable passive Q-switching of a Tm: LiYF4 laser is obtained using polycrystalline Cr2+: ZnS as a saturable absorber. The achieved maximum pulse energy of 0.9 mJ and peak power of 65 kW for a pulse duration of ～14 ns represent substantial improvement and highest values for a passively Q-switched diode-pumped Tm laser operating at ～1.9 μm.     

Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser

We report, for the first time to our knowledge, a diode-pumped cw and passively Q-switched microchip Er, Yb:YAl(3)(BO(3))(4) laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using Co(2+):MgAl(2)O(4) as a saturable absorber, a TEM(00)-mode Q-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 μJ at a repetition rate of 60 kHz.     

Efficient diode-pumped actively Q-switched Nd:YAG/BaWO4 intracavity Raman laser

Barium tungstate (BaWO4) is employed to achieve efficient stimulated Raman scattering conversion in a compact diode-pumped actively Q-switched Nd:YAG laser. With an incident pump power of 9.2 W, 1.56 W of 1181 nm first-Stokes average output power was generated at a pulse repetition rate of 20 kHz, corresponding to an optical-to-optical conversion efficiency of 16.9%.     

High peak power eye-safe intracavity optical parametric oscillator pumped by a diode-pumped passively Q-switched ND:GGG laser

By exploiting the diode-end-pumped Nd:GGG/Cr⁴⁺:YAG laser as the pump source, a high peak power gray-trace resistance KTP intracavity optical parametric oscillator at eye-safe wavelength was first demonstrated (to our knowledge). Under the incident diode power of 10 W, the maximum average output power of 320 mW at 1567 nm was obtained with the T = 33% output coupler. The corresponding signal pulse width and repetition rate were respectively 1.4 ns and 5.8 kHz. Due to the greatly reduced pulse repetition rate and short pulse width, the signal peak power was estimated to be as high as 39.4 kW.     

Passively mode-locked Raman laser

We report on the observation of a mode-locked laser generated with a crystalline whispering gallery mode resonator pumped with a continuous wave laser. Optical pumping of the resonator generates an optical frequency comb with phase locked components at the Raman offset of the resonator host material. Phase locking of the modes is confirmed via measurement of the radio-frequency beat note produced by the comb on a fast photodiode. Neither the conventional Kerr comb nor hyperparametric oscillation is observed when the comb is present. We present a theoretical explanation of the effect.     

Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO₄ crystal and a Cr⁴⁺:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO₄ optically contacted on a 0.4 mm long Cr⁴⁺:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.     

56-ps passively Q-switched diode-pumped microchip laser

We passively Q switched a diode-pumped Nd:YVO4 microchip crystal with an antiresonant Fabry-Perot saturable absorber and achieved single-frequency pulses as short as 56 ps. We can vary the pulse width from 56 ps to 30 ns and the repetition rate from 27 kHz up to 7 MHz by changing the design parameters of the saturable absorber and the pump power.     

Highly efficient diode-pumped actively Q-switched Nd:YAG-SrWO(4) intracavity Raman laser

A highly efficient diode-pumped actively Q-switched intracavity Raman laser with SrWO(4) as the Raman-active medium is presented. As high as 23.8% diode-to-Stokes optical conversion efficiency is obtained with an incident pump power of 7.17 W and a pulse repetition rate of 15 kHz.     

Optical parametric oscillation in periodically poled lithium niobate driven by a diode-pumped Q-switched erbium fiber laser

We describe what is to our knowledge the first nanosecond periodically poled lithium niobate (PPLN) optical parametric oscillator (OPO) driven by a fiber laser. The source was frequency doubled by a PPLN sample before pumping a second, 20-mm-long, PPLN crystal. The OPO threshold was <10muJ, with pump depletions of as much as 45% and a tunable signal range of 945-1450 nm (1690-4450-nm idler range). We demonstrated 130-nm signal tuning by varying the pump wavelength and doubling crystal's temperature. Also, we achieved 15-nm tuning with all crystals at a constant temperature. The results demonstrate the potential of the fiber laser:PPLN combination for practical, versatile, and tunable sources.     

Passively Q-switched Self-frequency Doubling NYAB laser with GaAs Saturable Absorber

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Passively Q-switched Self-frequency Doubling NYAB laser with GaAs Saturable Absorber

By using a passive Q-switch with GaAs saturable absorber, the Q-switched self-frequency doubling NYAB laser at 0.531μm has been successfully realized. The pulse width and the single pulse energy are measured. The numerical solutions of the coupling wave rate equations are in agreement with the experimental results.     

氧化石墨烯被动调Q掺铒光纤激光器

报道了基于氧化石墨烯的被动调Q掺铒光纤激光器。激光器采用环形腔结构,调Q器件为自制的氧化石墨烯可饱和吸收镜。泵浦功率在81~505 mW范围内时,得到了重复频率68~124 kHz的稳定的调Q脉冲输出,脉宽为0.47~1.60 s。由于泵浦功率限制,激光器最大输出功率为10 mW, 相应单脉冲能量为80.6 nJ。此种基于氧化石墨烯可饱和吸收体的被动调Q光纤激光器体积小、成本低廉、结构简单、稳定性高、光束质量高,具有广阔的应用前景。     

High-conversion-efficiency, diode-pumped continuous-wave Raman laser

We demonstrate a diode-pumped cw Raman laser in H(2) with photon-conversion efficiency of (66+/-8)%. Pumped by an injection-locked diode laser at 792 nm, the Stokes laser produces a peak output power of ~16mW at 1180 nm. Accompanying the high Stokes power are deviations from the existing theory, which are believed to be caused by the thermal-lensing effect of the Raman gas.     

Q-switched and mode-locked diode-pumped Nd:YAG laser with an LT-GaAs

Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using low-temperature GaAs (LT-GaAs) as the saturable absorber, which also acts as an output coupler at the same time. The repetition rate of the Q-switched envelope increased from 25 to 40 kHz as the pump power increased from 2.2 to 6.9 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 714 MHz. A maximum average output power of 770 mW was obtained.     

Passively Q-switched Nd3+:YAG laser with corner cube

A passively Q-switched Nd3+:YAG laser with corner cube is theoretically and experimentally studied. We analyze the polarization variation in cavity and simulate the peak power, pulse energy and pulse width changed with the rotation angle of corner cube numerically. An experiment is made to verify the theoretical results. With rotating the angle of corner cube about the axis the variation range of peak power is 1.77 MW (from 10.36 to 8.59 MW), and that of pulse energy is 14.9 mJ (from 159.5 to 174.4 mJ), the fluctuation of pulse width is 2.95 ns. The experimental results agree with the theoretical analysis to the extent of variation rules. The most dynamic to static energy ratio of 62.5% is achieved.