Improvement of frequency sensitivity of series photodetector frequency circuit system and its application for Cy5 fluorescence detection

This study elucidated the frequency characteristics of series photodetector frequency circuit system for detection of DNA probe ET996 marked with fluorescence dye Cy5. We developed 48 MHz series photodetector frequency circuit system with good sensitivity for fluorescence detection. In accordance with the theory of series photodetector frequency circuit system, the frequency sensitivity can be improved by adjusting circuit parameters such as A (tan θ), C_q, C₀, and C_p. In this research of A adjustment, the capacitance parameter C_m of 48 MHz series photodetector frequency circuit system was adjusted to improve the frequency sensitivity for detection of fluorescence dye concentration; moreover, the bias of photodetector was also adjusted to improve the frequency sensitivity. In the optimal conditions of capacitance match and photodetector bias, the detection limit of ET996-Cy5 fluorescence dye concentration 2 pmol/L can be measured by 48 MHz sensor system. The results of fluorescence experiment also demonstrated that the frequency shift of 48 MHz sensor system was linearly related to the logarithm of fluorescence dye concentration from 200 nmol/L to 2 pmol/L. The frequency method can be applied simply and the detection limit of ET996-Cy5 fluorescence dye concentration was lower than the conventional fluorescence technique by 2 orders.     

Linearity improvement of Cy5 fluorescence concentration detection using series photodetector frequency circuit system with ITO–PolySi–metal–semiconductor–metal photodetector and its application for DNA detection and bacterial identification

In this study, the 48 MHz series photodetector frequency circuit system with ITO–PolySi–metal–semiconductor–metal photodetector was developed for Cy5 fluorescence detection of DNA probe ET996. The theory analysis of series photodetector frequency circuit system showed that the circuit parameters such as C_p and A (tan θ) can be applied to improve the frequency sensitivity. In this research, the lower capacitance of ITO–PolySi–metal–semiconductor–metal photodetector (C_p) was made and selected to improve the frequency sensitivity. According to derived theory of A adjustment, the capacitance match C_m and bias of ITO–PolySi–metal–semiconductor–metal photodetector were adjusted to improve the frequency sensitivity for detection of fluorescence dye concentration. On the basis of optimal conditions of capacitance match C_m and bias of photodetector, the detection limit of ET996-Cy5 fluorescence dye concentration 2 pmol/L can be measured by 48 MHz sensor system. Moreover, the detection linearity of 48 MHz sensor system was improved and the frequency shift ΔF was linearly related to the logarithm of fluorescence dye concentration in the range 2 pmol/L–20 μmol/L; meanwhile, through the feature of probe uniqueness, Edwardsiella BCRC 10670 DNA and fluorescence probe ET996-Cy5 can be successfully judged for hybridization reaction.     

The frequency characteristics analysis of series photodetector frequency circuit system based on circuit parameters of quartz crystal and its application for bacterial DNA identification

The circuit parameters of quartz crystal were employed for frequency sensitivity analysis of series photodetector frequency circuit system. The influence of circuit parameters of quartz crystal on the oscillation frequency and response sensitivity were theoretically derived and experimentally verified. On the basis of optimal circuit parameters, the DNA probe detection limit 2 pmol/L can be measured by 49.4 MHz sensor system. In comparison with the conventional fluorescence technique, the frequency method showed that the detection limits of DNA probe AH642 with Cy5 fluorescence dye and DNA probe VA180 with Cy5 fluorescence dye were lower than the conventional fluorescence technique by 2–3 orders; meanwhile, through the feature of probe uniqueness, Aeromonas hydrophila DNA and fluorescence probe AH642-Cy5 can be successfully judged for hybridization reaction. Moreover, Vibro alginolyticus DNA and fluorescence probe VA180-Cy5 can be successfully judged for hybridization reaction.     

Capacitance–voltage and conductance–voltage characteristics of Ag/n-CdO/p-Si MIS structure prepared by sol–gel method

The frequency dependent electrical properties of Ag/n-CdO/p-Si structure has been investigated using capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics in the frequency range 10 kHz–1 MHz in the room temperature. The increase in capacitance at lower frequencies is observed as a signature of interface states. The presence of the interfaces states (N_SS) is also evidenced as a peak in the capacitance–frequency characteristics. Furthermore, the voltage and frequency dependence of series resistance were calculated from the C–V and G/ω–V measurements and plotted as functions of voltage and frequency. The distribution profile of R_S–V gives a peak in the depletion region at low frequencies and disappears with increasing frequencies. The values of interface state densities and series resistance from capacitance–voltage-frequency (C–V-f) and conductance–voltage-frequency (G/ω–V-f) measurements were obtained in the ranges of 1.44×10¹⁶–7.59×10¹² cm^?2 eV^?1 and 341.49–8.77 Ω, respectively. The obtained results show that the C–V-f and G/ω–V-f characteristics confirm that the interface states density (N_SS) and series resistance (R_S) of the diode are important parameters that strongly influence the electrical parameters in Ag/n-CdO/p-Si structures.     

Experimental and theoretical study of AC electrical conduction mechanisms of Organic–inorganic hybrid compound Bis (4-acetylanilinium) tetrachlorocadmiate (II)

A new organic–inorganic bis (4-acetylaniline) tetrachlorocadmate [C₈H₁₀NO]₂[CdCl₄] can be obtained by slow evaporation at room temperature and characterized by X-ray powder diffraction. It crystallized in an orthorhombic system (Cmca space group). The material electrical properties were characterized by impedance spectroscopy technique in the frequency range from 209 Hz–5 MHz and temperature 413 to 460 K. Besides, the impedance plots show semicircle arcs at different temperatures and an electrical equivalent circuit has been proposed to interpret the impedance results. The circuits consist of the parallel combination of a resistance (R), capacitance (C) and fractal capacitance (CPE). The variation of the exponent s as a function of temperature suggested that the conduction mechanism in Bis (4-acetylanilinium) tetrachlorocadmiate compound is governed by two processes which can be ascribed to a hopping transport mechanism: correlated barrier hopping (CBH) model below 443 K and the small polaron tunneling (SPT) model above 443 K.     

Microfabrication of solenoid-type RF SMD chip inductors with an Al2O3 core

We investigated micron size, high-performance, and solenoid-type radio-frequency surface-mounted device (SMD) chip inductors with a low-loss Al₂O₃ core for a GHz drive microwave circuit application. Copper coils with a diameter of 27 μm were used and the chip inductors fabricated in this study are 0.86 × 0.46 × 0.45 mm³. The high-frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of the developed inductors were measured using a RF impedance/material analyzer (HP4291B with HP16193A test fixture). The developed inductors have a self-resonant frequency of 3.7–5.2 GHz and exhibit L of 15–34 nH. The inductors have Q of 38–49 over the frequency ranges of 900 MHz–1.7 GHz. The calculated data obtained from the equivalent circuit and the derived equation of Q described the high-frequency data of L, Q, and Z of the inductors developed quite well.     

Dielectric response of Cu0.5Tl0.5Ba2(Ca2−yMgy)(Cu0.5Zn2.5)O10−δ bulk superconductor to frequency and temperature

The dielectric properties of Cu_0.5Tl_0.5Ba₂Ca_2?yMg_yCu_0.5Zn_2.5O_10?δ (y = 0, 0.5, 1.0, 1.5) superconductor samples were studied at 79 and 290 K by means of capacitance (C) and conductance (G) measurements with the test frequency (f) in the range of 10 KHz to 10 MHz. A negative capacitance (NC) phenomenon has been observed, which is most likely arising due to higher Fermi level of ceramic superconductor samples than metal electrodes. Also the NC may be due to the space charge located at the multiple insulator–superconductor interfaces (grain boundaries) in the materials. The negative dielectric constant (ε′) and loss factor (tan δ) show strong dispersion at low frequencies. The lower thermal agitation at 79 K may enhance the polarizability and hence the dielectric constants (ε′ and ε″).     

Impedance spectroscopic studies of an organic semiconductor device incorporating a thin film of highly doped ZnPc with MoO3

We use experimental results of low signal impedance spectroscopy to investigate the conduction mechanism in organic semiconductor, zinc phthalocyanine (ZnPc). The first 10 nm, of a total of 150 nm thermally deposited ZnPc, was doped with molybdenum oxide (MoO₃) by co-evaporation to obtain a 20% doping concentration. The ac electrical parameters were measured at room temperature in the dc bias and frequency ranges of 0–5 V and 100 Hz–0.1 MHz, respectively. The variation of bulk resistance with applied bias presents a clear indication of space charge limited conduction in the fabricated device. The experimental results show a strong frequency dependence of capacitance and loss tangent at low frequencies and high applied bias, while at higher frequencies and low applied bias a weak dependence is observed. Moreover, the ac conductivity shows a strong dependence on frequency and is found to vary as ω^s with the index s≤1.15 suggesting a dominant hopping mechanism of conduction.     

Dielectric properties and study of AC electrical conduction mechanisms by non-overlapping small polaron tunneling model in Bis(4-acetylanilinium) tetrachlorocuprate(II) compound

In the present work, the synthesis and characterization of the Bis(4-acetylanilinium) tetrachlorocuprate(II) compound are presented. The structure of this compound is analyzed by X-ray diffraction which confirms the formation of single phase and is in good agreement the literature. Indeed, the Thermo gravimetric Analysis (TGA) shows that the decomposition of the compound is observed in the range of 420–520 K. However, the differential thermal analysis (DTA) indicates the presence of a phase transition at T=363 k. Furthermore, the dielectric properties and AC conductivity were studied over a temperature range (338–413 K) and frequency range (200 Hz–5 MHz) using complex impedance spectroscopy. Dielectric measurements confirmed such thermal analyses by exhibiting the presence of an anomaly in the temperature range of 358–373 K. The complex impedance plots are analyzed by an electrical equivalent circuit consisting of resistance, constant phase element (CPE) and capacitance. The activation energy values of two distinct regions are obtained from log σT vs 1000/T plot and are found to be E=1.27 eV (T<363 K) and E=1.09 eV (363 K<T).The frequency dependence of ac conductivity, σ_ac, has been analyzed by Jonscher's universal power law σ(ω)=σ_dc+Aω^s. The value of s is to be temperature-dependent, which has a tendency to increase with temperature and the non-overlapping small polaron tunneling (NSPT) model is the most applicable conduction mechanism in the title compound.     

Enhanced performance of bi-layer Nb2O5 coated TiO2 nanoparticles/nanowires composite photoanode in dye-sensitized solar cells

Dye sensitized solar cells (DSSCs) were fabricated based on coumarin NKX-2700 dye sensitized bi-layer photoanode and quasi-solid state electrolyte sandwiched together with cobalt sulfide coated counter electrode. A novel bi-layer photoanode has been prepared using composite mixtures of 90 wt.% TiO₂ nanoparticles + 10 wt.% TiO₂ nanowires (TNPWs) as active layer and Nb₂O₅ is coated on the active layer, which acts as scattering layer. Hafnium oxide (HfO₂) was applied over the TNPWs/Nb₂O₅ photoanode film, as a blocking layer. TiO₂ nanoparticles (TNPs), TiO₂ nanowires (TNWs) and TNPWs/Nb₂O₅ were characterized by X-ray diffractometer (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM). The sensitizing organic dye coumarin NKX-2700 displayed maximum absorption wavelength (λ_max) at 525 nm, which could be observed from the UV–vis spectrum. DSSC-1 fabricated with composite bi-layer photoanode revealed enhanced photo-current efficiency (PCE) as compared to other DSSCs and illustrated photovoltaic parameters; short-circuit current J_SC = 18 mA/cm², open circuit voltage (V_OC) = 700 mV, fill factor (FF) = 64% and PCE (η) = 8.06%. The electron transport and charge recombination behaviors of DSSCs were investigated by electrochemical impedance spectra (EIS) and the results illustrated that the DSSC-1 showed the lowest charge transport resistance (R_tr) and the longest electron lifetime (τ_eff). Therefore, in the present investigation, it could be concluded that the novel bi-layer photoanode with blocking layer increased the short circuit current, electron transport and suppressed the recombination of charge carriers at the photoanode/dye/electrolyte interface in DSSC-1.     

Development and characteristics of solenoid-type SMD RF chip inductors

Simple, solenoid-type surface-mounted device (SMD) chip inductors utilizing low-loss Al₂O₃ core materials for a radio-frequency (RF) drive microwave circuit application were developed. The SMD chip inductors were fabricated with five different specifications, namely, 0.86 × 0.46 × 0.45, 1.0 × 0.5 × 0.5, 1.5 × 1.0 × 0.7, 2.1 × 1.5 × 1.0, and 2.4 × 2.0 × 1.4 mm³. Copper coils with diameters in the range of 27–40 μm were used. The frequency characteristics of the inductance (L), quality factor (Q), and impedance of the developed inductors were measured using a RF impedance/material analyzer (HP4291B with HP16193A test fixture). It was observed that the developed inductors with the number of turns of 12 have L of 34–270 nH, exhibit a self-resonant frequency (SRF) of 3.7–0.75 GHz, and have Q of 40–70 over the frequency ranges of 200 MHz–1.2 GHz. The L of inductors increases and the SRF decreases with increasing the size of inductors. From the experimental results, it was concluded that the high-frequency data calculated from the equivalent circuit and the derived equation of Q described quite well the experimental data of the developed inductors.     

Structural and permeability sensitivity of cells to low intensity ultrasound: Infrared and fluorescence evidence in vitro

This work is focused on the in vitro study of the effects induced by medical ultrasound (US) in murine fibroblast cells (NIH-3T3) at a low-intensity of exposure (spatial peak temporal average intensity I_ta < 0.1 W cm⁻²). Conventional 1 MHz and 3 MHz US devices of therapeutic relevance were employed with varying intensity and exposure time parameters. In this framework, upon cells exposure to US, structural changes at the molecular level were evaluated by infrared spectroscopy; alterations in plasma membrane permeability were monitored in terms of uptake efficiency of small cell-impermeable model drug molecules, as measured by fluorescence microscopy and flow cytometry. The results were related to the cell viability and combined with the statistical PCA analysis, confirming that NIH-3T3 cells are sensitive to therapeutic US, mainly at 1 MHz, with time-dependent increases in both efficiency of uptake, recovery of wild-type membrane permeability, and the size of molecules entering 3T3. On the contrary, the exposures from US equipment at 3 MHz show uptakes comparable with untreated samples.     

Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices

A non-volatile flash memory device based on metal oxide semiconductor (MOS) capacitor structure has been fabricated using platinum nano-crystals(Pt–NCs) as storage units embedded in HfAlO_x high-k tunneling layers. Its memory characteristics and tunneling mechanism are characterized by capacitance–voltage(C–V) and flat-band voltage-time(ΔV_FB-T) measurements. A 6.5 V flat-band voltage (memory window) corresponding to the stored charge density of 2.29 × 10¹³ cm⁻² and about 88% stored electron reserved after apply ±8 V program or erase voltage for 10⁵ s at high frequency of 1 MHz was demonstrated. Investigation of leakage current–voltage(J–V) indicated that defects-enhanced Pool-Frenkel tunneling plays an important role in the tunneling mechanism for the storage charges. Hence, the Pt–NCs and HfAlO_x based MOS structure has a promising application in non-volatile flash memory devices.     

Pump tuned wide tunable noncritically phase-matched ZnGeP2 narrow line width optical parametric oscillator

A line tunable singly resonant noncritically phase matched narrow band width ZnGeP₂ (ZGP) optical parametric oscillator pumped by the output idler radiation from a KTA OPO based on a 20 mm long KTA crystal pumped from a Q-switched Gaussian shaped Nd:YAG laser beam with a grating having grooves density 85 lines/mm has been demonstrated in the spectral ranges of 3–7 μm. The measured threshold of oscillation energy was 10 μJ. The conversion efficiency was 20.5% and slope efficiency of the ZGP OPO was 20% using a 23 mm long ZGP crystal at 26 mm cavity length. Line width of the generated infrared radiation from ZGP OPO was 37–60 nm.     

Optical absorption and dispersion characterizations of CuGaSe2 thin films prepared by flash evaporation technique

Thin films of CuGaSe₂ have been prepared by flash evaporation technique. The optical properties of the prepared films were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence of light in the wavelength range from 400 to 2500 nm. The optical constants as refractive index, n, and absorption index, k, were calculated and found to be independent of film thickness in the range of the film thickness 132–423 nm. The analysis of the photon energy against the absorption coefficient showed three direct optical transitions (one of them is allowed while the others are forbidden). This direct transition was ascribed to the crystal field and spin orbital splitting of the upper most valence band. The crystal field and spin orbital splitting of CuGaSe₂ were found to be ? 0.15 eV and 0.45 eV, respectively. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple–DiDomenico (WD) model. The single oscillator energy (E_o), the dispersion energy (E_d), the high frequency dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the ratio of free charge carrier concentration to the effective mass (N / m*) were estimated. The capacitance–voltage measurements of CuGaSe₂/p-Si heterojunction showed that the diode is abrupt junction diode. The carrier concentration and the built-in voltage were estimated. The current–voltage characteristics of the device under illumination were investigated and photovoltaic properties of the device were evaluated.     

Dynamic features of a laser-induced cavitation bubble near a solid boundary

This paper deals with detailed features of bubble dynamics near a solid boundary. The cavitation bubble was created by using a Q-switched Nd: YAG laser pulse and observed using a high-speed camera (up to 100,000 frames per second). A hydrophone system was employed to monitor the acoustic signals generated by the transient pressure impulses and estimate the bubble oscillation periods. Experimental observations were carried out for bubbles with various maximum expanded radius R_max (between 1.0 mm and 1.6 mm) and stand-off distances, ds (defined as the distance between the solid boundary and the bubble center at inception) of 0.4 ? γ ? 3.0, and γ = ds/R_max. The existence of a solid boundary created asymmetry in the flow field and forced the bubble to collapse non-spherically, which finally brought forth the jet impact phenomenon. The dimensionless first and second oscillation periods were dependent on γ. A series of expansion and collapse of the bubble with cascading loss of energy were observed after the bubble had been generated. This study revealed that most bubbles lost about two-thirds of the total energy from the first maximum expansion to the second maximum expansion.     

Modeling of electrical and optical characteristics of near room-temperature CdS/ZnSe based NIR photodetectors

Results of modeled photodetector characteristics in (CdS/ZnSe)/BeTe multi-well diode with p–i–n polarity are reported. The dark current density (J–V) characteristics, the temperature dependence of zero-bias resistance area product (R₀A), the dynamic resistance as well as bias dependent dynamic resistance (R_d) and have been analyzed to investigate the mechanisms limiting the electrical performance of the modeled photodetectors. The quantum efficiency, the responsivity and the detectivity have been also studied as function of the operating wavelength. The suitability of the modeled photodetector is demonstrated by its feasibility of achieving good device performance near room temperature operating at 1.55 μm wavelength required for photodetection in optical communication. Quantum efficiency of ∼95%, responsivity ∼0.6 A/W and D^* ∼ 5.7 × 10¹⁰ cm Hz^1/2/W have been achieved at 300 K in X BeTe conduction band minimum.     

Giant magneto-impedance effect in CoMnSiB amorphous microwires

The giant magneto-impedance (GMI) ratio, ΔZ/Z=[(Z(H)−Z(H_max)]/Z(H_max), in a nearly zero magnetostrictive Co_68.5Mn_6.5Si₁₀B₁₅ amorphous microwire has been investigated for the frequency range 0.5–10 MHz, driving current amplitude of 0.5–2.5 mA, bias DC magnetic field up to 2400 A/m and under applied tensile stress up to 132 MPa. A maximum relative change in the GMI ratio up to around 130% is observed at a frequency of 10 MHz, magnetic DC field of about 180 A/m, driving current amplitude of 1 mA and under tension of 60 MPa. The tensile stress dependence of the magnetic field, H_m, corresponding to the maximum ΔZ/Z ratio allows to estimate the magnetostriction constant (λ_s≈−2×10⁻⁷) to be in good agreement with λ_s values estimated by different methods and in amorphous alloys with similar compositions.     

Evaluation of correlation between chemical dosimetry and subharmonic spectrum analysis to examine the acoustic cavitation

Currently several therapeutic applications of ultrasound in cancer treatment are under progress which uses cavitation phenomena to deliver their effects. There are several methods to evaluate cavitation activity such as chemical dosimetry and measurement of subharmonic signals. In this study, the cavitation activity induced by the ultrasound irradiation on exposure parameters has been measured by terephthalic acid chemical dosimetry and subharmonic analysis. Experiments were performed in the near 1 MHz fields in the progressive wave mode and effect of duty cycles changes with 2 W/cm² intensity (I_SATA) and acoustic intensity changes in continuous mode on both fluorescence intensity and subharmonic intensity were measured. The dependence between fluorescence intensity of terephthalic acid chemical dosimetry and subharmonic intensity analysis were analyzed by Pearson correlation (p-value < 0.05). It has been shown that the subharmonic intensity and the fluorescence intensity for continuous mode is higher than for pulsing mode (p-value < 0.05). Also results show that there is a significant difference between the subharmonic intensity and the fluorescence intensity with sonication intensity (p-value < 0.05). A significant correlation between the fluorescence intensity and subharmonic intensity at different duty cycles (R = 0.997, p-value < 0.05) and different intensities (R = 0.985, p-value < 0.05) were shown. The subharmonic intensity (μW/cm²) significantly correlated with the fluorescence intensity (count) (R = 0.901; p < 0.05) and the fluorescence intensity due to chemical dosimetry could be estimated with subharmonic intensity due to subharmonic spectrum analysis. It is concluded that there is dependence between terephthalic acid chemical dosimetry and subharmonic spectrum analysis to examine the acoustic cavitation activity.