Fabry–Pérot cavities based on chemical etching for high temperature and strain measurement

In this paper, two hybrid multimode/single mode fiber Fabry–Pérot (FP) cavities were compared. The cavities fabricated by chemical etching are presented as high temperature and strain sensors. In order to produce this FP cavity a single mode fiber was spliced to a graded index multimode fiber with 62.5 μm core diameter. The Fabry–Pérot cavities were tested as a high temperature sensor in the range between room temperature and 700 °C and as strain sensors. A reversible shift of the interferometric peaks with temperature allowed to estimate a sensitivity of 0.75 ± 0.03 pm/°C and 0.98 ± 0.04 pm/°C for the sensor A and B respectively. For strain measurement sensor A demonstrated a sensitivity of 1.85 ± 0.07 pm/μ? and sensor B showed a sensitivity of 3.14 ± 0.05 pm/μ?. The sensors demonstrated the feasibility of low cost fiber optic sensors for high temperature and strain.     

Spectral characteristics of polymer micro-fiber MZI near 1550 nm

The authors have produced the polymer micro-fiber with a highly optical conductive efficiency of 83% and 89% for the pump light of 532 nm and 1550 nm, respectively. The authors constructed a Mach–Zehnder Interferometer (MZI) by a micro-manipulation method and measured the different interference spectra by micro-adjusting the path difference of the dual interference arms of MZI under a microscope. Due to the path difference, the coherent length of the corresponding spectrum continuously and slightly decreases from 20 μm, 13.5 μm, 10.6 μm to 8 μm. The relationships between this particular MZI structure and the surrounding temperature, as well as the refractive index changes can be determined via the evanescent field and the thermally induced expansion or contraction effect, which will be reflected in the interference spectrum.     

A novel polarization splitter based on dual-core elliptical-holes hybrid photonic crystal fiber

A novel kind of polarization splitter in dual-core elliptical holes hybrid photonic crystal fiber is proposed. Numerical results show that the splitter can reach small coupling length ratio of 0.5, for wavelength from 1.15 μm to 1.9 μm. At wavelength 1.55 μm, the extinction ratio can achieve ?64 dB and the 1.92-mm-long splitter is suggested to achieve extinction ratio better than ?10 dB, a bandwidth of 150 nm. The fiber has small coupling length ratio, small coupling length and high extinction ratio and it is more suitable for fabricating polarization splitter.     

Step feature observed in the angular dependence of magnetization switching fields in GaMnAs micro-device

The magnetization switching phenomena of GaMnAs Hall devices have been investigated by using the planar Hall effect (PHE) measurement. Though two different sizes of Hall bar devices, width of 300 and of 10 μm, show very similar Curie temperature, their magnetization switching fields behave significantly different. While the angle dependence of magnetization switching field of the 300 μm device showed typical rectangular shape behavior with an applied magnetic field angle in the polar plot, that of the 10 μm device exhibited large step at 〈1 1 0〉 crystallographic directions, breaking the continuity of the switching field in angle dependence. Such unusual phenomenon observed in the 10 μm device was discussed in terms of the change in magnetic anisotropy by the fabrication of micro-device.     

Temperature independent torsion sensor using a high-birefringent Sagnac loop interferometer

A high-birefringent (Hi-Bi) Sagnac loop interferometer for torsion measurement is demonstrated. The sensing head is formed by a section of standard single mode fiber spliced between the output ports of a Hi-Bi coupler at 3 dB. The sensing configuration is characterized in torsion, temperature and strain. The results obtained indicate the viability of a torsion sensor independent of the temperature and strain cross-sensitivity effects. Additionally, in the proposed configuration all measurements are performed without the need of a polarization controller, a device most often required in standard Sagnac loops applied for sensing.     

Size effects on characteristic magnetic fields of a spin-valve multilayer by computer simulation

The change in characteristic magnetic fields of a spin-valve multilayer is investigated as a function of the size by computer simulation. The spin-valve modeled in this work is IrMn (9 nm)/CoFe (4 nm)/Cu (2.6 nm)/CoFe (2 nm)/NiFe (6 nm). The spin-valve dimensions are varied widely from 20 mm×10 mm to 0.5 μm×0.25 μm, but the aspect ratio defined by the ratio of the length to the width is fixed at 2.0. The magnetostatic interactions begin to affect the magnetic properties substantially at a spin-valve length of 5 μm, and, at a length of 1 μm, they become even more dominant. The main consequences of the magnetostatic interactions are a significant increase of the coercivity and a very large shift of the bias field in both the pinned and free layers. It is shown that these changes can be explained by two separate contributions to the total magnetostatic interactions: the coercivity change by the self-demagnetizing field and the change of the bias field by the interlayer magnetostatic interaction field.     

High power Nd:YAG lasers operating at 1.3 μm wave band

The laser properties of 1.3 μm spectral region in Nd:YAG crystal and their simultaneous dual wavelength threshold condition are investigated. Three types of high power 1.3-μm Nd:YAG quasi continuous wave (QCW) lasers, which operate at 1.319 μm or 1.338 μm single wavelength, 1.319 μm and 1.338 μm simultaneous dual wavelength, are achieved with a maximum average output power of 138 W, 132 W and 120 W, respectively.     

Effect of length on the magnetic properties of Ni 300 nm wide nanowires

The Ni 300 nm wide nanowires were fabricated inside the as-synthesized nanochannels of anodic aluminum oxide (AAO) template by electrochemical deposition method. The angular dependence of coercivity and remanence of Ni nanowire arrays with various lengths have been comparatively studied. Investigation results demonstrate that the easy axis is along the wire axis for the longer nanowires of 4 μm or 9 μm in length due to their large shape anisotropy. However, the magnetostatic coupling is dominant for the shorter nanowires of 0.9 μm in length resulting in the change of magnetization behaviors, including coercivity and easy axis. A further explanation was also given by simple calculation in the paper.     

Evolution of array format of longwave infrared Type-II SLS FPAs with high quantum efficiency

In the remarkably short span of 2 years, longwave infrared focal plane arrays (FPAs) of Type-II InAs/GaSb strained layer superlattice (SLS) photodiodes have advanced from 320 × 256 format to 1024 × 1024 format while simultaneously shrinking the pitch from 30 μm to 18 μm. Despite a dark current that is presently higher than state-of-the-art mercury cadmium telluride photodiodes with the same ∼10 μm cutoff wavelength, the high pixel operability and high (∼50%) quantum efficiency of SLS FPAs enable excellent imagery with temporal noise equivalent temperature difference better than 30 mK with F/4 optics, integration time less than 1 ms, and operating temperature of 77 K or colder. We present current FPA performance of this promising sensor technology.     

High energy femtosecond OPA pumped by 1030 nm Yb:KGW laser.

We present a traveling-wave-type optical parametric amplifier (OPA) pumped at 1.03 μm by a Yb:KGW laser that produces tunable high-energy pulses of 6.5–4 μJ in the mid-infrared (mid-IR) region from 3.6 to 7 μm. Pumping with negatively chirped pulses generates nearly transform-limited (TL) mid-IR pulses of 300–330 fs length. Pumping with TL pulses of 200 fs not only decreases the output energy by a factor of 1.5, but also decreases the mid-IR pulse-length to 160 fs after additional compression. The compact and simple OPA setup is ideal for femtosecond infrared experiments in the fingerprint region.     

Electromagnetically Induced Transparency and optical pumping processes formed in Cs sub-micron thin cell

The Electromagnetically Induced Transparency (EIT) effect in a Λ-system formed by Cs atoms (6S_1/2 ? 6P_3/2 ? 6S_1/2) confined in an extremely thin cell (ETC) (atomic column thickness L varies in the range of 800 nm –3 µm is studied both experimentally and theoretically. It is demonstrated that when the coupling laser frequency is in exact resonance with the corresponding atomic transition, the EIT resonance parameters weakly depend on L, which allows us to detect the effect at L = λ = 852 nm. EIT process reveals a striking peculiarity in case of the coupling laser detuned by Δ from the atomic transition, namely the width of the EIT resonance rapidly increases upon an increase in Δ (an opposite effect is observed in centimeter-scale cells). The strong broadening of the EIT resonance for large values of detunings Δ is caused by the influence of atom-wall collisions on dephasing rate of coherence. The influence of the coupling laser on the velocity selective optical pumping/saturation resonances formed in ETC has been also studied. The theoretical model well describes the observed results.     

Study of resonant modes in a 700 nm pitch macroporous silicon photonic crystal

In this study the modes produced by a defect inserted in a macroporous silicon (MP) photonic crystal (PC) have been studied theoretical and experimentally. In particular, the transmitted and reflected spectra have been analyzed for variations in the defect’s length and width. The performed simulations show that the resonant frequency is more easily adjusted for the fabricated samples by length tuning rather than width. The optimum resonance peak results when centered in the PC bandgap. The changes in the defect geometry result in small variations of the optical response of the PC. The resonance frequency is most sensitive to length variations, while the mode linewidth shows greater change with the defect width variation. Several MPS photonic crystals were fabricated by the electrochemical etching (EE) process with optical response in the range of 5.8 μm to 6.5 μm. Results of the characterization are in good agreement with simulations. Further samples were fabricated consisting of ordered modulated pores with a pitch of 700 nm. This allowed to reduce the vertical periodicity and therefore to have the optical response in the range of 4.4 μm to 4.8 μm. To our knowledge, modes working in this range of wavelengths have not been previously reported in 3-d MPS structures. Experimental results match with simulations, showing a linear relationship between the defect’s length and working frequency inside the bandgap. We demonstrate the possibility of tailoring the resonance peak in both ranges of wavelengths, where the principal absorption lines of different gases in the mid infrared are placed. This makes these structures very promising for their application to compact gas sensors.     

Picosecond laser cutting and drilling of thin flex glass

We investigate the feasibility of cutting and drilling thin flex glass (TFG) substrates using a picosecond laser operating at wavelengths of 1030 nm, 515 nm and 343 nm. 50 μm and 100 μm thick AF32^®Eco Thin Glass (Schott AG) sheets are used. The laser processing parameters such as the wavelength, pulse energy, pulse repetition frequency, scan speed and the number of laser passes which are necessary to perform through a cut or to drill a borehole in the TFG substrate are studied in detail. Our results show that the highest effective cutting speeds (220 mm/s for a 50 μm thick TFG substrate and 74 mm/s for a 100 μm thick TFG substrate) are obtained with the 1030 nm wavelength, whereas the 343 nm wavelength provides the best quality cuts. The 515 nm wavelength, meanwhile, can be used to provide relatively good laser cut quality with heat affected zones (HAZ) of <25 μm for 50 μm TFG and <40 μm for 100 μm TFG with cutting speeds of 100 mm/s and 28.5 mm/s, respectively. The 343 nm and 515 nm wavelengths can also be used for drilling micro-holes (with inlet diameters of ⩽75 µm) in the 100 μm TFG substrate with speeds of up to 2 holes per second (using 343 nm) and 8 holes per second (using 515 nm). Optical microscope and SEM images of the cuts and micro-holes are presented.     

Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays

We have demonstrated 384 × 288 pixels mid-wavelength infrared focal plane arrays (FPA) using type II InAs/GaSb superlattice (T2SL) photodetectors with pitch of 25 μm. Two p-i-n T2SL samples were grown by molecular beam epitaxy with both GaAs-like and InSb-like interface. The diode chips were realized by pixel isolation with both dry etching and wet etching method, and passivation with SiN_x layer. The device one with 50% cutoff wavelength of 4.1 μm shows NETD ∼ 18 mK from 77 K to 100 K. The NETD of the other device with 50% cutoff wavelength at 5.6 μm is 10 mK at 77 K. Finally, the T2SL FPA shows high quality imaging capability at the temperature ranging from 80 K to 100 K which demonstrates the devices’ good temperature performance.     

Antenna length and polarization response of antenna-coupled MOM diode infrared detectors

This work focuses on the fabrication and response of dipole antenna-coupled metal–oxide–metal diode detectors to long-wave infrared radiation. The detectors are fabricated using a single electron beam lithography step and a shadow evaporation technique. The detector’s characteristics are presented, which include response as a function of incident infrared power and polarization angle. In addition, the effect of dipole antenna length on detection characteristics for 10.6 μm radiation has been measured to determine resonant lengths. The response of the detector shows a first resonance at a dipole length of 3.1 μm, a second resonance at 9.3 μm, and third at 15.5 μm. The zeros intermediate to the resonances are also evident.     

Design of a compact polarization splitter based on the dual-elliptical-core photonic crystal fiber

We propose a compact polarization splitter based on dual-elliptical-core photonic crystal fiber. Two elliptical cores are introduced to increase the difference of effective index between x-polarized and y-polarized mode and three elliptical modulation air holes are used to control the power transfer between the two cores. By optimizing the structure parameters, the length of the polarization splitter is distinctly shortened. Numerical results demonstrate that the compact splitter has the length of 775 μm and up to 50 dB extinction ratio at the central wavelength of 1.55 μm. The corresponding bandwidth of 32 nm could be achieved from the wavelength of 1.534–1.566 μm with the extinction ratio over 20 dB     

Resonant detectors and focal plane arrays for infrared detection

We are developing resonator-QWIPs for narrowband and broadband long wavelength infrared detection. Detector pixels with 25 μm and 30 μm pitches were hybridized to fanout circuits and readout integrated electronics for radiometric measurements. With a low to moderate doping of 0.2–0.5 × 10¹⁸ cm⁻³ and a thin active layer thickness of 0.6–1.3 μm, we achieved a quantum efficiency between 25 and 37% and a conversion efficiency between of 15 and 20%. The temperature at which photocurrent equals dark current is about 65 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 20 mK at 2 ms integration time and 60 K operating temperature. This good performance confirms the advantages of the resonator-QWIP approach.     

Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes

In this paper, quantum efficiency (QE) measurements performed on type-II InAs/GaSb superlattice (T2SL) photodiodes operating in the mid-wavelength infrared domain, are reported. Several comparisons were made in order to determine the SL structure showing optimum radiometric performances: same InAs-rich SL structure with different active zone thicknesses (from 0.5 μm to 4 μm) and different active zone doping (n-type versus p-type), same 1 μm thick p-type active zone doping with different SL designs (InAs-rich versus GaSb-rich and symmetric SL structures). Best result was obtained for the p-type doped InAs-rich SL photodiode, with a 4 μm active zone thickness, showing a QE that reaches 61% at λ = 2 μm and 0 V bias voltage.     

Ultrasmall optical logic gates based on silicon periodic dielectric waveguides

An ultrasmall silicon periodic dielectric waveguides-based multimode interference all-optical logic gate has been proposed. The device consists of three 205 nm wide single-mode input waveguides, a 1.1 μm wide and 5.5 μm long multimode interference waveguide, and three 205 nm wide single-mode output waveguides. The total length and width of the device are 13.7 μm and 3.2 μm, respectively. By changing the states of the input optical signals and/or control signals launched into the device, multifunctional logic functions including OR, NAND, NOR, and NOT gates are performed, and each logic function can be realized at a specific output waveguide in accordance with the launched control signals. The ultrasmall multifunctional logic device has potential applications in high density photonic integrated circuits.     

Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires

In-plane magnetic anisotropy of 40-μm-long (Ga,Mn)As wires with different widths (0.4, 1.0, and 20 μm) has been investigated between 5 and 75 K by measuring anisotropic magneto-resistance (AMR). The wires show in-plane 〈1 0 0〉 cubic and [−1 1 0] uniaxial anisotropies, and an additional lithography-induced anisotropy along the wire direction in narrow wires with width of 0.4 and 1.0 μm. We derive the temperature dependence of the cubic, uniaxial, and lithography-induced anisotropy constants from the results of AMR, and find that a sizable anisotropy can be provided by lithographic means, which allows us to control and detect the magnetization reversal process by choosing the direction of the external magnetic fields.