Concentration quenching of Eu2+ in a thermal-stable yellow phosphor Ca2BO3Cl:Eu2+ for LED application

A piece-shaped phosphor Ca₂BO₃Cl: Eu²⁺ was synthesized by solid-state reaction method. This phosphor exhibited wide absorption in ultra-violet and visible range, and bright yellow emission band centering at 570 nm. The concentration quenching mechanism was verified to be a dipole–dipole interaction, and its critical transfer distance was about 17 Å by both calculated crystal structural method and experimental spectral method. This phosphor has a good thermal stability with a quenching temperature (T_1/2) of 200 °C. Yellow and white LEDs were fabricated with this phosphor and near UV chips, and the yellow LED has a high color purity of 97.0% and promising current tolerant property, while the white LED shows a luminous efficiency of 11.68 lm/W.     

High-peak-power,short-pulse-width,LD end-pumped,passively Q-switched Nd:YAG 946 nm laser

High-peak-power, short-pulse-width diode pumped 946 nm Nd:YAG laser in passively Q-switching operation with Cr⁴⁺:YAG is reported. The highest average output power reaches 3.4 W using the Cr⁴⁺:YAG with initial transmissivity T₀=95%. When the T₀=90% Cr⁴⁺:YAG is employed, the maximum peak power of 31.4 kW with a pulse width of 8.3 ns at 946 nm is generated.     

The influence of thermal lens effect on pulse repetition rate in diode-pumped passively Q-switched Nd:GdVO4/V:YAG laser

The influence of thermal lens effect on pulse repetition rate in diode-pumped Nd:GdVO₄ 1.34 μm laser has been demonstrated. The repetition rate first increased, then reduced with augment of the pump power, for V:YAG with initial transmission (T₀) of 96%. The maximum repetition rate was 70 kHz, obtained at the pump power of 6.78 W. The best output laser characteristics—the pulse width of 39.2 ns, the peak power of 2.5 kW and the single pulse energy of 102 μJ—were obtained by V:YAG of T₀=89%. With the Gaussian spatial distribution of intracavity photon density being considered, the rate equations were solved numerically and the theoretical calculations agreed with the experimental results.     

The study on the nonlinear optical response of Sudan I

The nonlinear optical properties of Sudan I were investigated by a single beam Z-scan technique. The Sudan I ethanol solution exhibited large nonlinear refractive indices under both CW and pulse laser excitations. The nonlinear refractive indices of Sudan I were in the order of ?10^?8 cm²/W under CW 633 nm excitation and ?10^?6 cm²/W under CW 488 nm excitation, respectively. Under the excitation of a pulse 532 nm laser, the nonlinear refractive index n₂ was calculated to be 1.19 × 10^?14 cm²/W. It was discussed that the mechanism accounting for the process of nonlinear refraction was attributed to the laser heating for the CW laser excitation and the electronic effect for the pulse excitation. Moreover, the second hyperpolarizability of Sudan I was also estimated in this paper.     

Shock tube/laser absorption studies of the decomposition of methyl formate

Reaction rate coefficients for the major high-temperature methyl formate (MF, CH₃OCHO) decomposition pathways, MF → CH₃OH + CO (1), MF → CH₂O + CH₂O (2), and MF → CH₄ + CO₂ (3), were directly measured in a shock tube using laser absorption of CO (4.6 μm), CH₂O (306 nm) and CH₄ (3.4 μm). Experimental conditions ranged from 1202 to 1607 K and 1.36 to 1.72 atm, with mixtures varying in initial fuel concentration from 0.1% to 3% MF diluted in argon. The decomposition rate coefficients were determined by monitoring the formation rate of each target species immediately behind the reflected shock waves and modeling the species time-histories with a detailed kinetic mechanism [12]. The three measured rate coefficients can be well-described using two-parameter Arrhenius expressions over the temperature range in the present study: k₁ = 1.1 × 10¹³ exp(?29556/T, K) s^?1, k₂ = 2.6 × 10¹² exp(?32052/T, K) s^?1, and k₃ = 4.4 × 10¹¹ exp(?29 078/T, K) s^?1, all thought to be near their high-pressure limits. Uncertainties in the k₁, k₂ and k₃ measurements were estimated to be ±25%, ±35%, and ±40%, respectively. We believe that these are the first direct high-temperature rate measurements for MF decomposition and all are in excellent agreement with the Dooley et al. [12] mechanism. In addition, by also monitoring methanol (CH₃OH) and MF concentration histories using a tunable CO₂ gas laser operating at 9.67 and 9.23 μm, respectively, all the major oxygen-carrying molecules were quantitatively detected in the reaction system. An oxygen balance analysis during MF decomposition shows that the multi-wavelength laser absorption strategy used in this study was able to track more than 97% of the initial oxygen atoms in the fuel.     

Improvement of stability and pulse energy in a diode-pumped dual-loss-modulated QML Nd:Lu0.2Y0.8VO4 laser with EO modulator and GaAs

The Q-switched and mode-locked (QML) performance in a diode-pumped Nd:Lu_0.2Y_0.8VO₄ laser with electro-optic (EO) modulator and GaAs saturaber absorber is investigated. In comparison with the solely passively QML laser with GaAs, the dual-loss-modulated QML laser with EO and GaAs can generate pulses with higher stability and shorter pulse width of Q-switched envelope, as well as higher pulse energy. At the repetition rate 1 kHz of EO, the pulse width of Q-switched pulse envelope has a compression of 89% and the pulse energy has an improvement of 24 times. The QML laser characteristics such as the pulse width, pulse peak power etc. have been measured for different small-signal transmittance (T₀) of GaAs, different reflectivity (R) of output coupler and modulation frequencies of the EO modulator (f_e). The highest peak power and the shortest pulse width of mode-locked pulses are obtained at f_e = 1 kHz, R = 90% and T₀ = 92.6%. By considering the influences of EO modulator, a developed rate equation model for the dual-loss-modulated QML laser with EO modulator and GaAs is proposed. The numerical solutions of the equations are in good agreement with the experimental results.     

Diode-pumped continuous-wave and passively Q-switched 1.06 μm YVO4/Nd:GdVO4 laser

In this letter, a diode-pumped continuous-wave and passively Q-switched 1.06 μm laser with a novel composite YVO₄/Nd:GdVO₄ crystal was demonstrated for the first time. Theoretical calculations showed that the temperature distribution in YVO₄/Nd:GdVO₄ crystal was lower than that in GdVO₄/Nd:GdVO₄ and Nd:GdVO₄ crystals under the same conditions. After optimizing the mode matching degree, a CW output power of 5.6 W of YVO₄/Nd:GdVO₄ laser was obtained at the incident pump power of 12 W when the output coupler with transmission of 30% was employed. Using Cr^4 +:YAG crystals with initial transmission (T₀) of 80% and 90% as saturable absorbers, the pulsed YVO₄/Nd:GdVO₄ laser characteristics were investigated. At the incident pump power of 12 W, the maximum average output power of 2.76 W and the maximum repetition rate of 189 kHz was achieved when T₀ = 90% Cr^4 +:YAG was used. The shortest pulse width was 28.1 ns when the initial transmission of the used Cr^4 +:YAG was 80%.     

Multi-species time-history measurements during n-hexadecane oxidation behind reflected shock waves

Species concentration time-histories were measured during oxidation for the large, normal-alkane, diesel-surrogate component n-hexadecane. Measurements were performed behind reflected shock waves in an aerosol shock tube, which allowed for high fuel loading without pre-test heating and possible decomposition and oxidation. Experiments were conducted using near-stoichiometric mixtures of n-hexadecane and 4% oxygen in argon at temperatures of 1165–1352 K and pressures near 2 atm. Concentration time-histories were recorded for five species: C₂H₄, CH₄, OH, CO₂, and H₂O. Methane was monitored using DFG laser absorption near 3.4 μm; OH was monitored using UV laser absorption at 306.5 nm; C₂H₄ was monitored using a CO₂ gas laser at 10.5 μm; and CO₂ and H₂O were monitored using tunable DFB diode laser absorption at 2.7 and 2.5 μm, respectively. These time-histories provide critically needed kinetic targets to test and refine large reaction mechanisms. Comparisons were made with the predictions of two diesel-surrogate reaction mechanisms (Westbrook et al. [1]; Ranzi et al. [9]) that include n-hexadecane, and areas of needed improvement in the mechanisms were identified. Comparisons of the intermediate product yields of ethylene for n-hexadecane with those found for other smaller n-alkanes, show that an n-hexadecane mechanism derived from a simple hierarchical extrapolation from a smaller n-alkane mechanism does not properly simulate the experimental measurements.     

Photoluminescence properties of a new Eu2+-activated CaLaGa3S7 yellowish-green phosphor for white LED applications

A thiogallate chalcogenide phosphor CaLaGa₃S₇:Eu²⁺ was synthesized by a solid-state reaction at 950 °C in a H₂S atmosphere. The photoluminescence excitation,emission spectra, concentration quenching, fluorescence lifetime, and thermal quenching process of the phosphor were investigated in detail. It was found that the synthesized phosphor emitted intense and broadband yellowish-green light with a peak at 554 nm. Thus, the proposed phosphor is suitable for the development of blue or near UV LED. The critical dopant concentration of Eu²⁺ (R_c=15 Å) per unit formula was found to be 0.15 mol. At room temperature, the fluorescence lifetime of Eu²⁺ in CaLaGa₃S₇ was found to be 0.216 μs. The activation energy for thermal quenching was 0.29 eV. The chromaticity coordinates of our phosphor is very close in color to Y₃Al₅O₁₂:Ce³⁺. Therefore, CaLaGa₃S₇:Eu²⁺ can be a good alternative as a yellowish-green phosphor and can be used for white light generation in phosphor-converted LEDs.     

Polymorphic phase transition and thermal stability in squaric acid (H2C4O4)

Phase transformations in squaric acid (H₂C₄O₄) have been investigated by thermogravimetry and differential scanning calorimetry with different heating rates β. The mass loss in TG apparently begins at onset temperatures T_di=245±5 °C (β=5 °C min^?1), 262±5 °C (β=10 °C min^?1), and 275±5 °C (β=20 °C min^?1). A polymorphic phase transition was recognized as a weak endothermic peak in DSC around 101 °C (T_c⁺). Further heating with β=10 °C min^?1 in DSC revealed deviation of the baseline around 310 °C (T_i), and a large unusual exothermic peak around 355 °C (T_p), which are interpreted as an onset and a peak temperature of thermal decomposition, respectively. The activation energy of the thermal decomposition was obtained by employing relevant models. Thermal decomposition was recognized as a carbonization process, resulting in amorphous carbon.     

Simulation of influence ternary AlGaN and quaternary AlInGaN blocking layers on temperature characteristic of double quantum well violet InGaN laser diodes

Although of the potential advantages of quaternary AlInGaN as a blocking layer (BL) in double quantum well (QW) violet InGaN laser diode (LD), simulation results indicated that the temperature characteristic (T_o value) of the LD with a quaternary AlInGaN BL is lower than the T_o value of the LD with a conventional ternary AlGaN BL, whereas the T_o value of the LD with quaternary AlInGaN BL is 180 K and the T_o value with ternary AlGaN BL it is 194 K. This is due to the enhance carrier holes distribution between the double QWs with using the quaternary BL.     

Up-conversion luminescence and optical temperature-sensing properties of Er3+-doped perovskite Na0.5Bi0.5TiO3 nanocrystals

In this work we demonstrate the preparation of Er³⁺ doped perovskite ferroelectric Na_0.5Bi_0.5TiO₃ nanocrystals and their application in temperature sensing. The samples were synthesized via a facile hydrothermal method. Upconversion emission at 528 nm and 547 nm from two thermodynamically coupled excited states of Er³⁺ were recorded in the temperature from 80 K to 480 K under the excitation of a 980 nm diode laser. The emission intensity ratio (I₅₂₈/I₅₄₇) as a function of the temperature was investigated. A sensitivity of 0.0053 K⁻¹ is observed at 400 K, suggesting they are promising candidate for nanothermometers.     

Temperature measurements inside an Er3+–Yb3+ co-doped fluoride crystal heated by a NIR laser diode and probed by red-to-green upconversion

The temperature of a transparent Cd_0.7Sr_0.3F₂: Er³⁺(4%)–Yb³⁺(6%) crystalline plate 0.3 mm thick heated by a near-infrared (974 nm) laser diode and probed by a red (652 nm) laser was accurately evaluated as a function of the infrared power absorbed by the Yb³⁺ ions.The green emission generated by the Er³⁺ ions directly excited by the red laser consists of three major lines (coming from three individual Stark levels in thermal equilibrium) whose intensities were measured according to the absorbed infrared power and the distance between the heated and probed volumes, to evaluate the heating induced by the excitation of Yb³⁺ and Er³⁺ ions at 974 nm by applying the Boltzmann's equation linking the populations of emitting levels to the temperature. In the case where the Yb³⁺ ions excited by the laser diode are situated at a distance of about 0.5 mm from the edge of the crystal and for an absorbed infrared power of 100 mw, the crystal's edge temperature is reaching 80 °C after 20 s of continuous excitation at 974 nm.     

Preparation and photoluminescence properties of the Sr1.56Ba0.4SiO4:0.04Eu2+ phosphor

The Sr_1.56Ba_0.4SiO₄:0.04Eu²⁺ phosphors were prepared via a combustion reaction and following the calcination method at low temperature. The influences of the amount of the uncommonly used SrCl₂ flux, different calcination temperatures and time on the structure and the photoluminescence (PL) properties of the phosphors were investigated. Under the excitation of 450 nm blue light, the phosphor shows the intense broad emission band from 490 nm to 650 nm, and the emission peak is centered at 553 nm. The luminescence intensity of Sr_1.56Ba_0.4SiO₄:0.04Eu²⁺ was very sensitive to the crystallinity and morphology characteristics of the phosphor. The phosphor calcined at 950 °C for 3 h in 20%H₂/80%Ar atmosphere exhibits improved PL properties due to its high crystallinity and excellent morphology characteristics. The use of the SrCl₂ flux provides a novel way to improve the crystallinity of the silicates phosphors at low preparation temperature.     

Photovoltaic properties of black silicon microstructured by femtosecond pulsed laser

Prototype devices based on black silicon have been fabricated by microstructuring 250 μm thick multicrystalline n doped silicon wafers using femtosecond pulsed laser in ambient gas of SF₆ to measure its photovoltaic properties. The enhanced optical absorption of black silicon extends across the visible region and all the black silicons prepared in this work exhibit enhanced optical absorption close to 90% from 300 nm to 800 nm. The highest open-circuit voltage (V_oc) and short-circuit current (I_sc) under the illumination of He–Ne continuous laser at 632.8 nm were measured to be 53.3 mV and 0.11 mA, respectively at a maximum power conversion efficiency of 1.44%. Upon excitation with He–Ne continuous laser at 632.8 nm, external quantum efficiency (EQE) of black silicon as high as 112.9% has also been observed. Development of black silicon for photovoltaic purposes could open up a new perspective in achieving high efficient silicon-based solar cell by means of the enhanced optical absorption in the visible region. The current–voltage characteristic and photo responsivity of these prototype devices fabricated with microstructured silicon were also investigated.     

Blue emission in Eu2+ activated MgXAl10O17 (X = Sr,Ca) phosphors

Here we reported photoluminescence properties of Eu²⁺ activated in novel and existing MgXAl₁₀O₁₇ (X = Sr, Ca) phosphor which has been prepared by combustion synthesis at 550 °C under UV and near UV excitation wavelength. The PL emission properties of MgSrAl₁₀O₁₇:Eu²⁺ were monitored at 254 nm and 354 nm respectively keeping emission wavelength at 469 nm. Whereas novel MgCaAl₁₀O₁₇:Eu²⁺ exhibit emission band at 452 nm keeping excitation at 378 nm. These blue emission corresponds to 4f⁶5d¹ → 4f⁷ transition of Eu²⁺ ions. Further phosphor was analyzed by XRD for the confirmation of desired phase and purity.     

Photoluminescence characterization of a novel red-emitting phosphor In2(MoO4)3:Eu3+ for white light emitting diodes

The red-emitting phosphor In₂(MoO₄)₃:Eu³⁺ with cubic crystal structure was synthesized by a conventional solid-state reaction technique and its photoluminescence properties were investigated. The prepared phosphor can be efficiently excited by ultraviolet (395 nm) and blue (466 nm) light. The emission spectra of the phosphor manifest intensive red-emitting lines at 612 nm due to the electric dipole ⁵D₀→⁷F₂ transitions of Eu³⁺. The chromaticity coordinates of x=0.63, y=0.35 (λ_ex=395 nm) and x=0.60, y=0.38 (λ_ex=466 nm) are close to the standard of National Television Standard Committee values (NTSC) values. The concentration quenching of In₂(MoO₄)₃:Eu³⁺ is 40 mol% and the concentration self-quenching mechanism under 466 nm excitation was the dd intereaction. As a result of the strong emission intensity and good excitation, the phosphor In₂(MoO₄)₃:Eu³⁺ is regarded as a promising red-emitting conversion material for white LEDs.     

Luminescence study of self-trapped excitons in CdMoO4

Luminescence properties of CdMoO₄ crystals have been investigated in a wide temperature range of T=5–300 K. The luminescence-excitation spectra are examined by using synchrotron radiation as a light source. A broad structureless emission band appears with a maximum at nearly 550 nm when excited with photons in the fundamental absorption region (<350 nm) at T=5 K. This luminescence is ascribed to a radiative transition from the triplet state of a self-trapped exciton (STE) located on a (MoO₄)^2? complex anion. Time-resolved luminescence spectra are also measured under the excitation with 266 nm light from a Nd:YAG laser. It is confirmed that triplet luminescence consists of three emission bands with different decay times. Such composite nature is explained in terms of a Jahn–Teller splitting of the triplet STE state. The triplet luminescence at 550 nm is found to be greatly polarized in the direction along the crystallographic c axis at low temperatures, but change the degree of polarization from positive to negative at T>180 K. This remarkable polarization is accounted for by introducing further symmetry lowering of tetrahedral (MoO₄)^2? ions due to a uniaxial crystal field, in addition to the Jahn–Teller distortion. Furthermore, weak luminescence from a singlet state locating above the triplet state is time-resolved just after the pulse excitation, with a polarization parallel to the c axis. The excited sublevels of STEs responsible for CdMoO₄ luminescence are assigned on the basis of these experimental results and a group-theoretical consideration.     

Electronic excitations and luminescence of SrAlF5 crystals doped with Ce3+ ions

This paper reports the results of a time-resolved photoluminescence and energy transfer processes study in Ce³⁺ doped SrAlF₅ single crystals. Several Ce³⁺ centers emitting near 4 eV due to 5d-4f transitions of Ce³⁺ ions substituting for Sr²⁺ in non-equivalent lattice sites were identified. The lifetime of these transitions is in the range of 25–35 ns under intra-center excitation in the energy region of 4–7 eV at T = 10 K. An effective energy transfer from lattice defects to dopant ions was revealed in the – 7–11 eV energy range. Both direct and indirect excitation channels are efficient at room temperature. Excitons bound to dopants are revealed at T = 10 K under excitation in the fundamental absorption region above 11 eV, as well as radiative decay of self-trapped excitons resulting in luminescence near 3 eV.     

Giant magnetoresistance in the Ge-rich magnetocaloric compound,Gd5(Si0.1Ge0.9)4

We have measured the zero-field electrical resistivity in the temperature range 5–295 K and magnetoresistance in magnetic fields of up to 12 T of Gd₅(Si_0.1Ge_0.9)₄. The resistivity changes drastically at the magnetostructural first-order transition (T_C≅80 K on heating). This transition can be induced reversibly by the application of an external magnetic field above T_C, producing a concomitant giant magnetoresistance (GMR) effect, Δρ/ρ≅−50%. This study demonstrates that (in addition to giant magnetocaloric and magnetoelastic effects) GMR can be tuned between ∼20 and ∼290 K in Gd₅(Si_xGe_1−x)₄ with x⩽0.5 by simply adjusting the Si : Ge ratio.