A Boubaker polynomials expansion scheme (BPES)-related protocol for measuring sprayed thin films thermal characteristics

Measurements of In₂S₃ and ZnIn₂S₄ sprayed thin films thermal characteristics have been carried out using the photodetection technique. The thermal conductivity k and diffusivity D were obtained using a new protocol based on photothermal signal parameters analysis. Measured values of k and D were respectively, (15.2 ± 0.85) W m⁻¹K⁻¹ and (69.8 ± 7.1) × 10⁻⁶ m²s⁻¹ for In₂S₃, (7.2 ± 0.7) W m⁻¹K⁻¹ and (32.7 ± 4.3) × 10⁻⁶ m²s⁻¹ for ZnIn₂S₄. These values are extremely important since similar compounds are more and more proposed as Cd-free alternative materials for solar cells buffer layers.     

Measurement of the hyperfine splitting of the 9 S1/2 level in Cesium by Doppler-free two-photon spectroscopy

The hyperfine splitting for the ¹³³Cs isotope for the 6s ²S_1/2 → 9s ²S_1/2 transition has been measured using Doppler-free two-photon fluorescence spectroscopy in a gas cell for the first time to our knowledge. The hyperfine splitting between the two components was measured to be 8754 (1) MHz and the magnetic dipole coupling constant (A) for the excited 9s ²S_1/2 level was determined to be 109.7 (3) MHz for the ¹³³Cs isotope. The measured values are in good agreement with the earlier reported results.     

Manganite heterojunction photodetectors for femtosecond pulse laser measurements

We report a sensitive photodetector, based on a manganite junction La_2/3Ca_1/3MnO₃/Si, for femtosecond (fs) pulse laser energy per pulse and average power measurements. The La_2/3Ca_1/3MnO₃/Si photodetector exhibits D^? (normalized detectivity) greater than 5.229×10⁹ cm Hz^1/2 W^?1. The open-circuit photovoltage and short-circuit photocurrent responsivities reach ～268 V/mJ and ～275 A/mJ for single pulse irradiation, respectively, and the open-circuit photovoltage responsivity reaches ～1.7 V/W for average power illumination. The experimental results make the manganite junction a promising fs laser measurement detector and reference standard for calibrating fs lasers.     

Two-color polarization spectroscopy of rubidium

We report on two-color, two-photon polarization spectroscopy in a room-temperature rubidium vapor. We use two separate lasers, a strong pump at 780 nm to induce an anisotropy in the atomic polarization and a weak probe at 776 nm to interrogate this anisotropy. The lasers are resonant with the 5²S_1/2 → 5²P_3/2 and 5²P_3/2 → 5²D_5/2 transitions in rubidium, respectively. Finally, we have used our polarization spectroscopy signal as an error signal to lock the 776 nm laser. This modulation-free locking scheme allows us to detune the lock point of the second laser by adjusting the detuning of the laser used for the first transition.     

Ultraviolet spectroscopy of Pr+3 and its use in making ultraviolet filters

Sputtered deposited thin films of AlN:Pr and GaN:Pr emit in ultraviolet–visible and visible regions of the spectrum, respectively, under electron excitation in cathodoluminescence apparatus. The goal is to study the ultraviolet emission from Pr⁺³ when doped in nitride semiconductor hosts. Luminescence peaks at a wavelength of 295 nm (4.2 eV), 335 nm (3.7 eV) and 385 nm (3.24 eV) are observed as a result from ¹S₀ → ¹G₄, ¹S₀ → ¹D₂ and ¹S₀ → ¹I₆ transitions, respectively. However the ¹S₀ → ¹G₄ and ¹S₀ → ¹D₂ transitions are not observed when Pr⁺³ is doped in GaN host. The bandgap of GaN absorbs the ultraviolet radiation emitted from Pr⁺³ and hence GaN can be used as ultraviolet filter for radiation shielding and protection purposes. AlN is transparent to ultraviolet due to its wide bandgap of 6.2 eV.     

Ferromagnetic order and spin-glass behavior in multi-metallic compound Ni1.125Co0.375[Fe(CN)6] · 6.8H2O

Multi-metallic Prussian blue compound Ni_1.125Co_0.375[Fe(CN)₆] · 6.8H₂O has been synthesized. The Mössbauer spectroscopy at room temperature and IR spectra study revealed that the metal ions are bonded through cyanide ligand and the presence of low spin Fe^III(S = 1/2) and high spin Fe^III(S = 5/2) ions, as showed in these structure: Fe^III(S = 1/2)-CN-(Co^II/Ni^II)(96%) and Fe^III(S = 5/2)-NC-(Co^II/Ni^II) (4%). The Curie constant of C = 3.00 cm³ K mol⁻¹ and Weiss paramagnetic Curie temperature of θ = 16.43 K were observed in fitting according to Curie–Weiss law. These results indicate that there existed a ferromagnetic exchange interaction in the complexes. The observed value of coercive field (H_c) and remanent magnetization (M_r) at 4 K for the compound are 497 Oe and 1.03 Nβ. The presence of spin-glass behaviours in the compound is ascribed mainly to domain mobility or domain growth under different cooling conditions.     

Ultrafast photoisomerization and its single-shot pump pulse efficiency of trans-azobenzene derivative: Compound for photosensitive DNA

The femtosecond photoisomerization processes of trans (T) 4-carboxy-2′,6′-dimethylazobenzen, which has been employed recently as an efficient photoregulator of DNA hybridization, were clarified by the rate equation analysis of measured transient absorbance changes with (350 nm) and without (380 nm) ground-state absorption of both the reactant (T) and photoproduct (cis: C) isomers under S₂^T-band excitation (360 nm, 150 fs pump): after excitation to the S₂^T state with a 450-fs lifetime, ~ 1.5% of the T-molecules in the S₂^T state are isomerized to the C-form within ~ 6 ps through the intermediate state (so called bottleneck state), but most of those return back to the T ground-state S₂^T via the internal conversion processes with an ultrafast kinetic rate of 2.2 × 10¹² s^? 1. Moreover, the rate equation analysis enables us to determine the T-to-C photoisomerization rate η^T,C per pump pulse to be 0.0011 at the pump energy of 80 nJ from the amplitude A_3,350 of the offset component in the 350-nm probe signal, and to obtain the photoisomerization quantum yield Φ^T,C = 0.094. The latter value is slightly lower than that of T-azobenzene, and well agrees with that (Φ^T,C = 0.097) measured by the conventional CW irradiation method using a photostationary state.     

Recombination luminescence of CsI(Tl) under electron pulse irradiation

The luminescence kinetics of CsI(Tl) exposed to an electron pulse irradiation (E_e = 250 keV, t_1/2 = 10 ns, j = 2 ÷ 160 mJ/cm²) has been studied. It has been discovered that the slow emission rise is due to hole V_k–Tl⁰ recombination luminescence at temperature from 100 to 160 K and electron–V_kA recombination, where electrons released from single Tl⁰ at temperature from 180 to 300 K. The effect of Tl concentration on both processes has been investigated.     

The thermopower of transition-metal double-perovskites: A sensitive probe of their electronic structures around the Fermi level

We report on a comparative study of S(T) for a series of transition-metal double-perovskites A₂BB′O₆ (A – Ca, Sr, Ba, and B, B′ = transition metal ions), some of them known to have half-metallic ground states. For Sr₂BB′O₆ with BB′ = CrMo, CrW, CrRe, FeMo, and FeRe (ferrimagnetic with high Curie temperatures), S(T) is metallic, for B′ = Mo and W it is n-type and for B′ =  Re, p-type. For A₂FeMoO₆ (A = Ca, Sr, Ba), the crystallographic differences (monoclinic, tetragonal and cubic space-groups, respectively) are accompanied by prominent differences in their (metallic) S(T). For the insulating Sr₂MnReO₆ and Ba₂MnReO₆, the onset of ferromagnetic order below T_c ∼ 120 K is marked by a steep drop of S(T) accompanied by only a slight change in the slope of ln ρ versus 1/T^1/2. Significant conclusions were drawn from the experimental results without the need for elaborate models.     

Electrical conduction and thermoelectric properties of perovskite-type BaBi1−xSbxO3

To elucidate the thermoelectric properties at high temperatures, the electrical conductivity and Seebeck coefficient were measured at temperatures between 423 K and 973 K for perovskite-type ceramics of BaBi_1?xSb_xO₃ solid solutions with x=0.0–0.5. All the ceramics exhibit p-type semiconducting behaviors and electrical conduction is attributed to hopping of small polaronic holes localized on the pentavalent cations. Substitution of Bi with Sb causes the electrical conductivity σ and cell volume to decrease, but the Seebeck coefficient S to increase, suggesting that the Sb atoms are doped as Sb⁵⁺ and replace Bi⁵⁺, reducing 6s holes conduction from Bi⁵⁺(6s⁰) to Bi³⁺ (6s²). The thermoelectric power factor S ²σ has values of 6×10^?8–3×10^?5 W m^?1 K^?2 in the measured temperature range, and is maximized for an Sb-undoped BaBiO_3?δ, but decreases upon Sb doping due to the decreased σ values.     

Infrared spectra of acetylene–water complexes: C2D2–H2O,C2D2–HDO,and C2D2–D2O

Infrared spectra of C₂D₂–water complexes are studied in the 4.1 μm region of the C₂D₂ ν₃ fundamental band using a tunable diode laser source to probe a pulsed supersonic slit jet. Relatively large vibrational red shifts (?27.7 to ?28.0 cm^?1) are observed which are more easily interpretable than for the analogous C₂H₂ vibration thanks to the absence of Fermi resonance effects for C₂D₂. Noticeable homogeneous line broadening leads to estimates of upper state predissociation lifetimes of about 0.5, 0.9 and 1.1 ns for C₂D₂–H₂O, –HDO, and –D₂O, respectively. Transitions involving K_a = 0 and 1 levels are observed for C₂D₂–HDO, but there is a puzzling absence of K_a = 1 for C₂D₂–H₂O and C₂D₂–D₂O.     

1.34 μm fluorescence and laser properties of Nd:La0.11Y0.89VO4 crystal

For Nd:La_xY_1−xVO₄ (x = 0.11) crystal, the ⁴F_3/2 → ⁴I_13/2 transition property was investigated for the first time. The fluorescence peak of Nd:La_0.11Y_0.89VO₄ crystal exhibited obvious inhomogeneous broadening comparing with that of Nd:YVO₄ crystal. With laser diode array as pump source, 1.34 μm continuous-wave (CW) and active Q-switched laser operations based on ⁴F_3/2 → ⁴I_13/2 transition were realized. For CW laser operation, the maximum output power of 2.47, 2.13 W is obtained with slope efficiencies of 29.4%, 27.6%, and optical to optical conversion efficiency of 26.2%, 24.7%, respectively for a, c cut crystal samples. For acousto-optic (AO) Q-switched laser operation, the shortest pulse width, highest peak power and maximum pulse energy came from the a-cut sample, which were 13 ns, 2.69 kW and 35 μJ, respectively.     

Study on visible luminescence of the Tm3 +: 1D2 → 3 F4 emission state in lead borate titanate aluminumfluoride glasses

This paper reports the visible luminescence properties of ¹D₂ state of Tm^3 + -doped lead borate titanate aluminumfluoride (LBTAFTm) glasses. The absorption and luminescence was analyzed within the frame work of Judd-Ofelt model. The reliability of J-O intensity parameters obtained from the experimental oscillator strengths have satisfactorily been correlated with the calculated oscillator strengths with small r.m.s deviation of ± 0.12 × 10^-6 by the least square fit analysis. Upon 359 nm excitation, the luminescence spectra show only one emission band at 458 nm (blue) corresponding to the ¹D₂ → ³ F₄ transition in the spectral region 400–500 nm. No luminescence quenching has been observed with the increase of Tm^3 + concentration. The decay profiles of the ¹D₂ level have shown single-exponential nature for all the concentrations and the decay times were found to decrease with the increase of concentration. The stimulated emission cross-section (σ_e) for the observed emission transition has also been computed. The large quantum efficiency (η) of the ¹D₂ level suggests the utility of LBTAFTm glass as a potential host for optical device applications at 458 nm emission wavelength.     

InAs/GaSb strained layer superlattice detectors with nBn design

We have investigated the electrical and optical properties of an nBn based Type-II InAs/GaSb strained layer superlattice detector as a function of absorber region background carrier concentration. Temperature-dependent dark current, responsivity and detectivity were measured. At T = 77 K and V_b = 0.1 V, with two orders of magnitude change in doping concentration, the dark current density increased from ～0.3 mA/cm² to ～0.3 A/cm². We attribute this to a depletion region that exists at the AlGaSb barrier and the SLS absorber interface. The device with non-intentionally doped absorption region demonstrated the lowest dark current density (0.3 mA/cm² at 0.1 V) with a specific detectivity D¹ at zero bias equal to 1.2 × 10¹¹ Jones at 77 K. The D¹ value decreased to 6 × 10¹⁰ cm Hz^1/2/W at 150 K. This temperature dependence is significantly different from conventional PIN diodes, in which the D¹ decreases by over two orders of magnitude from 77 K to 150 K, making nBn devices a promising alternative for higher operating temperatures.     

Oxygen diffusion and surface exchange studies on (La0.75Sr0.25)0.95Cr0.5Mn0.5O3−δ

Oxygen tracer diffusion coefficient (D^⁎) and surface exchange coefficient (k^⁎) have been measured for (La_0.75Sr_0.25)_0.95Cr_0.5Mn_0.5O_3−δ using isotopic exchange and depth profiling by secondary ion mass spectrometry technique as a function of temperature (700–1000 °C) in dry oxygen and in a water vapour-forming gas mixture. The typical values of D^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 4 × 10^− 10 cm² s^− 1 and 3 × 10^− 8 cm² s^− 1 respectively, whereas the values of k^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 5 × 10^− 8 cm s^− 1 and 4 × 10^− 8 cm s^− 1 respectively. The apparent activation energies for D^⁎ in oxidising and reducing conditions are 0.8 eV and 1.9 eV respectively.     

Analysis of the Coriolis interaction between ν6 and ν4 bands of ethylene-cis-d2(cis-C2H2D2) by high-resolution FTIR spectroscopy

The Fourier transform infrared (FTIR) spectrum of the ν₆ band of ethylene-cis-d₂(cis-C₂H₂D₂) was recorded with a unapodized resolution of 0.0063 cm^?1 in the 990–1100 cm^?1 region. A total of 609 transitions were assigned to this band centred at 1039.7682 ± 0.0003 cm^?1. The ν₆ band was found to be coupled to the ν₄ band by a-type Coriolis resonance. Both perturbed and unperturbed transitions were assigned and fitted to give eight rovibrational constants with high accuracy for the v₆ = 1 state with a standard deviation of 0.00097 cm^?1 using a Watson’s A-reduced Hamiltonian in the I^r representation. From a rovibrational analysis of the Coriolis interaction between the ν₆ band and non-infrared active ν₄ band of cis-C₂H₂D₂, the band centre of ν₄ at 984.9 ± 0.2 cm^?1 was derived. Furthermore, the second-order a-type Coriolis coupling constant between the two bands was obtained for the first time.     

M/Li+(M = Mg2+, Zn2+, and Mn2+) ion-exchange on lithium ion-conducting perovskite-type oxides and their properties

Lithium ions of perovskite-type lithium ion conductor La_0.55Li_0.35TiO₃ were replaced by divalent Mg²⁺, Zn²⁺, and Mn²⁺ ions in an ion-exchange reaction using molten chlorides. The polycrystalline Mg-exchanged and Zn-exchanged samples are solid electrolytes for divalent Mg²⁺ and Zn²⁺ ions, whose dc ionic conductivities (σ = 2.0 × 10^− 6 S cm^− 1 at 558 K for the Mg-exchanged sample, La_0.56(2)Li_0.02(1)Mg_0.16(1)TiO_3.01(2) and σ = 1.7 × 10^− 6 S cm^− 1 at 708 K for the Zn-exchanged samples, La_0.55(1)Li_0.0037(2)Zn_0.15(1)TiO_2.98(2)) were compared to those of the known highest Mg²⁺ and Zn²⁺ inorganic solid electrolytes. The Mn-exchanged sample, then, showed paramagnetic behavior in the temperature range of 2 to 300 K. The Mn ions in the exchanged sample are divalent and the spin configuration is in high spin state (S = 5/2).     

Cr4+:YAG passively Q-switched c-cut Nd:YVO4 self-Raman laser at 1168.6 nm

We demonstrate the first Cr⁴⁺:YAG passively Q-switched c-cut Nd:YVO₄ self-Raman laser at 1168.6 nm based on the Stokes shift of 816 cm⁻¹. At the pump power of 4.7 W, the maximum output power of the Stokes line at 1168.6 nm is 270.5 mW, corresponding to an optical conversion efficiency of 5.8%. The pulse width, pulse repetition rate, pulse energy and peak power are 8.8 ns, 35.8 kHz, 7.6 μJ and 0.86 kW, respectively. At the pump of 5.0 W, the Stokes line at 1097.2 nm based on Raman shift of 259 cm⁻¹ also appears.     

Ce0.8Sm0.2O1.9 synthesis for solid oxide fuel cell electrolyte by ultrasound assisted co-precipitation method

In this study, the synthesis of Ce_0.8Sm_0.2O_1.9 (SDC) solid electrolyte by the ultrasound assisted co-precipitation method was accomplished to explore the effects of ultrasound power, ultrasound pulse ratio and probe type upon the ionic conductivity of SDC as well as the lattice parameter, the microstructure and the density. Fine powders of uniform crystallite sizes (average 11.70 ± 0.62 nm) were obtained, needing lower sintering temperature. The SDC powders were successfully sintered to a relative density of over 95% at 1200 °C (5 °C min^?1) for 6 h. The micrograph of SDC pellets showed non-agglomerated and well-developed grains with average size of about 200 nm. X-ray diffraction analysis showed that the lattice parameter increased with increasing acoustic intensity and reached a maximum for the 14.94 W cm^?2. Further, a linear relationship was detected between the lattice parameter and the ionic conductivity, inspiring a dopant like effect of US on the electrolyte properties. The highest ionic conductivity as σ_800°C = 3.07 × 10^?2 S cm^?1 with an activation energy E_a = 0.871 kJ mol^?1 was obtained with pulsed ultrasound for an acoustic intensity of 14.94 W cm^?2, using 19 mm probe and 8:2 pulse ratio.     

Determination of the diffusion coefficient of lithium ions in nano-Si

The diffusion coefficients of lithium ions (D_Li⁺) in nano-Si were determined by cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and galvanostatic intermittent titration technique (GITT). D_Li⁺ values are estimated to be ~ 10^? 12 cm² s^? 1 and exhibit a “W” type varying with the lithium concentration in silicon. Two minimum regions of D_Li⁺ (at Li_2.1 ± 0.2Si and Li_3.2 ± 0.2Si) are found, which probably result from two amorphous compositions (a-Li₇Si₃ and a-Li₁₃Si₄). Besides the two minimum regions, one maximum D_Li⁺ is observed at Li₁₅Si₄, corresponding to the crystallization of highly lithiated amorphous Li_xSi.