Incident angle and temperature dependence of WSi wire-grid polarizer

The dependences of the incident angle and thermal durability of a tungsten silicide (WSi) wire-grid polarizer were examined. A WSi grating with a 0.5 fill factor, 260 nm depth, and 400 nm period was formed on a Si surface using two-beam interference and dry etching. The TM transmission spectrum of the fabricated element was greater than 60% at the incident angle of θ = 40° (the angle between the incident direction and the perpendicular axis to the grating direction) in the 4–10 μm wavelength range. An extinction ratio of 22.2 dB was achieved at 2.5 μm wavelength. Additionally, results show that this polarizer has higher thermal resistance than that of commercial infrared polarizers. Therefore, this polarizer is effective for taking a polarized thermal image of high temperatures.     

Resonant detectors and focal plane arrays for infrared detection

We are developing resonator-QWIPs for narrowband and broadband long wavelength infrared detection. Detector pixels with 25 μm and 30 μm pitches were hybridized to fanout circuits and readout integrated electronics for radiometric measurements. With a low to moderate doping of 0.2–0.5 × 10¹⁸ cm⁻³ and a thin active layer thickness of 0.6–1.3 μm, we achieved a quantum efficiency between 25 and 37% and a conversion efficiency between of 15 and 20%. The temperature at which photocurrent equals dark current is about 65 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 20 mK at 2 ms integration time and 60 K operating temperature. This good performance confirms the advantages of the resonator-QWIP approach.     

Effect of grating on IR LED device performance

The electroluminescence in the range of 3–4.5 μm and 6–10 μm from a Sb-based type II interband quantum cascade structure is reported. We measured the light emission from the top surface of the LED device with different grating structures. We used different etch depths for the grating formation. The light–current–voltage (LIV) characteristics measured at both room and cryogenic temperatures show that the device with 45° angle grating and 1.0 μm deep etch onto the GaSb surface has the highest emission power.     

Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice

In this paper, a mid-/long-wave dual-band detector which combined PπMN structure and unipolar barrier was developed based on type-II InAs/GaSb superlattice. A relevant 320 × 256 focal plane array (FPA) was fabricated. Unipolar barrier and PπMN structure in our dual band detector structure were used to suppress cross-talk and dark current, respectively. The two channels, with respective 50% cut-off wavelength at 4.5 μm and 10 μm were obtained. The peak quantum efficiency (QE) of mid wavelength infrared (MWIR) band and long wavelength infrared (LWIR) band are 53% at 3.2 μm under no bias voltage and 40% at 6.4 μm under bias voltage of −170 mV, respectively. And the dark current density under 0 and −170 mV of applied bias are 1.076 × 10⁻⁵ A/cm² and 2.16 × 10⁻⁴ A/cm². The specific detectivity of MWIR band and LWIR band are 2.15 × 10¹² cm·Hz^1/2/W at 3.2 μm and 2.31 × 10¹⁰ cm·Hz^1/2/W at 6.4 μm, respectively, at 77 K. The specific detectivity of LWIR band maintains above 10¹⁰ cm·Hz^1/2/W at the wavelength range from 4.3 μm to 10.2 μm under −170 mV. The cross-talk, selectivity parameter at 3.0 μm, about 0.14 was achieved under bias of −170 mV. Finally, the thermal images were taken by the fabricated FPA at 77 K.     

An anti-reflective 1D rectangle grating on GaAs solar cell using one-step femtosecond laser fabrication

We report the fabrication of the anti-reflective micro/nano-structure on absorbing layer of GaAs solar cell surface using an efficient approach based on one-step femtosecond laser irradiation. Morphology of the microstructures and reflectance of the cell irradiated are characterized with SEM and spectrometer to analyze the influence of laser processing parameters on the change of microstructures induced and the reflectance. It has been found that the rectangle grating micro/nano-structure with a period of 700 nm and width of 600 nm is obtained neatly with laser pulse energy of 30.5 μJ(pulse duration is 130 fs, center wavelength is 800 nm, scanning speed is 2.2 mm/s and spot diameter is 22 µm). Reflectance has been suppressed to 23.6% with rectangle structure from 33% of planar cell. In addition, simulation using a finite-difference-time domain(FDTD) method results show that the rectangle grating micro/nano-structure can effectively suppress the reflection within large wavelength ranges.     

Fiber curvature sensor based on spherical-shape structures and long-period grating

A novel curvature sensor based on optical fiber Mach–Zehnder interferometer (MZI) is demonstrated. It consists of two spherical-shape structures and a long-period grating (LPG) in between. The experimental results show that the shift of the dip wavelength is almost linearly proportional to the change of curvature, and the curvature sensitivity are −22.144 nm/m⁻¹ in the measurement range of 5.33–6.93 m⁻¹, −28.225 nm/m⁻¹ in the range of 6.93–8.43 m⁻ and −15.68 nm/m⁻¹ in the range of 8.43–9.43 m⁻¹, respectively. And the maximum curvature error caused by temperature is only −0.003 m⁻¹/°C. The sensor exhibits the advantages of all-fiber structure, high mechanical strength, high curvature sensitivity and large measurement scales.     

Design of a highly nonlinear twin bow-tie polymer photonic quasi-crystal fiber with high birefringence

A twin bow-tie polymer-based photonic quasi-crystal fiber with high birefringence, high nonlinearity and low dispersion as well as maintaining single mode operation is presented in the wavelength range 1.8–2.2 μm. Through optimizing fiber structure parameter using a full-vector finite-element method combined with perfectly matched layers boundary condition, the birefringence is as high as 2.43 × 10⁻³, the nonlinearity is as high as 118 W⁻¹ km⁻¹, and the dispersion is only 25 ps/nm/km at 2 μm with the holes pitch of 3.3 μm. From the point of fabrication, the influences of deviation of each air hole diameter are discussed to verify the robustness of the photonic quasi-crystal fiber designed.     

Modeling of electrical and optical characteristics of near room-temperature CdS/ZnSe based NIR photodetectors

Results of modeled photodetector characteristics in (CdS/ZnSe)/BeTe multi-well diode with p–i–n polarity are reported. The dark current density (J–V) characteristics, the temperature dependence of zero-bias resistance area product (R₀A), the dynamic resistance as well as bias dependent dynamic resistance (R_d) and have been analyzed to investigate the mechanisms limiting the electrical performance of the modeled photodetectors. The quantum efficiency, the responsivity and the detectivity have been also studied as function of the operating wavelength. The suitability of the modeled photodetector is demonstrated by its feasibility of achieving good device performance near room temperature operating at 1.55 μm wavelength required for photodetection in optical communication. Quantum efficiency of ∼95%, responsivity ∼0.6 A/W and D^* ∼ 5.7 × 10¹⁰ cm Hz^1/2/W have been achieved at 300 K in X BeTe conduction band minimum.     

Picosecond laser cutting and drilling of thin flex glass

We investigate the feasibility of cutting and drilling thin flex glass (TFG) substrates using a picosecond laser operating at wavelengths of 1030 nm, 515 nm and 343 nm. 50 μm and 100 μm thick AF32^®Eco Thin Glass (Schott AG) sheets are used. The laser processing parameters such as the wavelength, pulse energy, pulse repetition frequency, scan speed and the number of laser passes which are necessary to perform through a cut or to drill a borehole in the TFG substrate are studied in detail. Our results show that the highest effective cutting speeds (220 mm/s for a 50 μm thick TFG substrate and 74 mm/s for a 100 μm thick TFG substrate) are obtained with the 1030 nm wavelength, whereas the 343 nm wavelength provides the best quality cuts. The 515 nm wavelength, meanwhile, can be used to provide relatively good laser cut quality with heat affected zones (HAZ) of <25 μm for 50 μm TFG and <40 μm for 100 μm TFG with cutting speeds of 100 mm/s and 28.5 mm/s, respectively. The 343 nm and 515 nm wavelengths can also be used for drilling micro-holes (with inlet diameters of ⩽75 µm) in the 100 μm TFG substrate with speeds of up to 2 holes per second (using 343 nm) and 8 holes per second (using 515 nm). Optical microscope and SEM images of the cuts and micro-holes are presented.     

320 × 256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice

Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice are demonstrated on GaSb substrate. The material is grown with 50% cut-off wavelength of 2.9 μm and 5.1 μm for the blue channel and red channel, separately at 77 K. 320 × 256 focal plane arrays fabricated in this wafer is characterized. The peak quantum efficiency without antireflective coating is 37% at 1.7 μm under no bias voltage and 28% at 3.2 μm under bias voltage of 130 mV. The peak specific detectivity are 1.51 × 10¹² cm·Hz^1/2/W at 2.5 μm and 6.11x10¹¹ cm·Hz^1/2/W at 3.2 μm. At 77 K, the noise equivalent difference temperature presents average values of 107 mK and 487 mK for the blue channel and red channel separately.     

Densification and microstructure of lead zirconate titanate ceramics fabricated from a triol sol–gel powder

Lead zirconate titanate (PZT) nano-powder was prepared by a triol sol–gel process. X-ray diffraction and transmission electron microscopy results showed that as-synthesized amorphous powder started to crystallize at the calcination temperature above 500 °C. The crystalline powder was formed into pellets and sintered at temperatures between 900 and 1300 °C. Co-existence of tetragonal and rhombohedral phase was observed in all ceramics. Microstructural investigation of PZT ceramics showed that uniform grain size distribution with average grain size of ∼0.8–2.5 μm were received with sintering temperature up to 1200 °C. Further increasing the temperature caused abnormal grain growth with the grain as large as 13.5 μm. An attempt to optimize densification with uniform grain size distribution was also performed by varying heating rate and holding time during sintering. It was found that dense (∼97%) sol–gel derived PZT ceramic with uniform microstructure was achieved at 1100 °C with a heating rate of 5 °C min⁻¹ and 6 h dwell time.     

Er/Yb co-doped fiber amplifier with wavelength-tuned Yb-band ring resonator

Erbium-ytterbium co-doped fiber amplifier with wavelength-tuned Yb-band loop resonator is presented. The amplified spontaneous emission (ASE) from Yb ions is utilized to stimulate a laser emission at several wavelengths from the 1 μm band in the 1550 nm amplifier. The wavelength of this lasing is tuned by introducing a fiber Bragg grating (FBG). The results show, that the overall efficiency of the amplifier at nominal 1550 nm wavelength can be increased by introducing a feedback loop with 1040 nm and 1050 nm FBG. This loop also protects the Er/Yb amplifier from parasitic lasing at 1 μm and allows significant output power scaling without risk of self-pulsing.     

Wavelength conversion based on high nonlinear microstructured fiber

A wavelength conversion based on high nonlinear microstructured fiber is demonstrated. Core diameter and pitch of the microstructured fiber used in this wavelength conversion method are 2.05 μm and 5.0 μm, respectively. Diameter of the air-holes in the fiber cladding is 4.50 μm, the nonlinear coefficient of the microstructured fiber is 112.2 W^?1 km^?1 and it is 60 times higher than that of a conventional dispersion-shift fiber, the length of the fiber is 100 m. Four-wave-mixing effect is improved in the high nonlinear microstructure fiber and then the efficiency of the wavelength conversion is improved also. 10 Gbps Not-Return-to-Zero (NRZ) modulation format and 10 Gbps Return-to-Zero (RZ) modulation format are converted effectively by our method. This study can provide a new alternative solution for high effective all-light wavelength conversion in high speed optical communication systems with multi-wavelengths and all-light optical networks.     

Design of an omnidirectional mirror using one dimensional photonic crystal with graded geometric layers thicknesses

We propose a flexible design for one-dimensional photonic crystals (1D-PCs) with a controllable omnidirectional band gap covering the optical telecommunication wavelengths which are 0.85 μm, 1.3 μm and 1.55 μm. We used for this design the chirped grating. Chirping is applied to geometric thicknesses of layers. It takes two forms, one is linear and the other is exponential. We exploit this technique to have the suitable omnidirectional band gap covering the maximum of optical telecommunication wavelengths. With a quarter wave structure, we can have an omnidirectional band gap generating only one of these wavelengths. With graded structure, we obtain, as is reported in this paper, an omnidirectional band gap which covers the wavelengths 1.3 μm and 1.55 μm at the same time with a large bandwidth. We also achieve an omnidirectional band gap containing the wavelength 0.85 μm and which is obviously larger than that of the quarter wave stack.     

Integrated wavelength monitoring in a photonic-crystal tunable laser diode

A photonic-crystal tunable 1.55 μm laser diode is fitted with a wavelength monitor on its rear side. The 250-μm long laser based on a coupled-cavity design has approximately 15 nm tunability. The wavelength monitor collects and differentially feeds two-photodetecting areas, thanks to a mode conversion to a higher-order mode (a mini-stopband), followed by tunneling through a thin clad. The layout is numerically optimized to minimize unwanted reflections. Electrical cross-talk was prevented through guard rings and trenches. The correlation between wavelength and the monitor photocurrent ratio demonstrates a 10–20 GHz stabilization capability, or a 15 nm monitoring range.     

Ultra-narrow angle-tunable Fabry–Perot bandpass interference filter for use as tuning element in infrared lasers

We have developed a bandpass infrared interference filter with sufficiently narrow bandwidth to be potentially suitable for tuning a self-stabilizing external-cavity quantum-cascade laser (ECQCL) in single-mode operation and describe the process parameters for fabrication of such filters with central wavelengths in the 3–12 μm range. The filter has a passband width of 6 nm or 0.14% with peak transmission of 55% and a central wavelength of approximately 4.0 μm. It can be tuned through over 4% by tilting with respect to the incident beam and offers orders of magnitude larger angular dispersion than diffraction gratings. We compare filters with single-cavity and coupled-cavity Fabry–Perot designs.     

A new design of low-loss and ultra-flat zero dispersion photonic crystal fiber using hollow ring defect

New hollow ring defect structure is introduced in photonic crystal fiber design for ultra- flat zero dispersion with very low waveguide losses. The hollow ring defect consisted of a central hole surrounded by a doped silica ring provides highly flexible defect engineering capabilities in photonic crystal fibers to achieve precise control of dispersion value and dispersion slope while independently maintaining low waveguide losses, which was not attainable in previous designs. A nearly flat zero dispersion of D=0±0.51 ps/nm km was obtained in the wavelength range of 1.44–1.61 μm with the maximum slope of ?2.7×10^?2 ps/nm² km. The confinement loss was less than 5.75×10^?8 dB/m along with the bending loss of 2.8×10^?6 dB/m for the radius of 10 mm, and splice loss of less than 1.57 dB to conventional single mode fiber at 1.55 μm.     

Quantum dot nanostructures for multi-band infrared detection

A dual-band (two-color) tunneling-quantum dot infrared photodetector (T-QDIP) structure, which provides wavelength selectivity using bias voltage polarity, is reported. In this T-QDIP, photoexcitation takes place in InGaAs QDs and the excited carriers tunnel through an AlGaAs/InGaAs/AlGaAs double-barrier by means of resonant tunneling when the bias voltage required to line up the QD excited state and the double-barrier state is applied. Two double-barriers incorporated on the top and bottom sides of the QDs provide tunneling conditions for the second and the first excited state in the QDs (one double-barrier for each QD excited state) under forward and reverse bias, respectively. This field dependent tunneling for excited carriers in the T-QDIP is the basis for the operating wavelength selection. Experimental results showed that the T-QDIP exhibits three response peaks at ～4.5 (or 4.9), 9.5, and 16.9 μm and selection of either the 9.5 or the 16.9 μm peak is obtained by the bias polarity. The peak detectivity (at 9.5 and 16.9 μm) of this detector is in the range of 1.0–6.0 × 10¹² Jones at 50 K. This detector does not provide a zero spectral crosstalk due to the peak at 4.5 μm not being bias-selectable. To overcome this, a quantum dot super-lattice infrared photodetector (SL-QDIP), which provides complete bias-selectability of the response peaks, is presented. The active region consists of two quantum dot super-lattices separated by a graded barrier, enabling photocurrent generation only in one super-lattice for a given bias polarity. According to theoretical predictions, a combined response due to three peaks at 2.9, 3.7, and 4.2 μm is expected for reverse bias, while a combined response of three peaks at 5.1, 7.8, and 10.5 μm is expected for forward bias.     

Realization of compatible stealth material for infrared,laser and radar based on one-dimensional doping-structure photonic crystals

To inhibit the radiant infrared energy between 8 and 14 μm, which is the infrared atmospheric window, and decrease the echo power of detecting laser and radar, to achieve compatible stealth, a doping structural one-dimensional photonic crystal (1-D PC) with Ge, ZnSe and Si was fabricated; and then combine it with radar absorbing material (RAM) to make a compound. After that, the reflection spectra of this compound was tested, and the result shows a high average reflectance (89.5%) in 8–14 μm waveband, and a reflective valley (39.8%) in the wavelength of 10.6 μm, which is the wavelength of CO₂ laser; and the reflectance in radar band shows that at high frequency, especially between 7.8 and 18 GHz, the radar power is strongly absorbed by this material and the reflected energy attenuate over 10 dB within the range from 11.1 GHz to 18.3 GHz, even 24.5 dB to the most in the frequency of 14.6 GHz.     

High-power single-longitudinal-mode operation of Tm:YAG laser using Fabry–Perot etalons and volume Bragg grating

A diode-pumped high-power single-longitudinal-mode (SLM) Tm:YAG laser was investigated. To obtain a single-frequency 2 μm laser output, Fabry–Perot (F–P) etalons combined with a volume Bragg grating (VBG) were used as frequency selection devices. The transmission losses of the VBG and etalons were analyzed and the angles of F–P etalons were optimized theoretically. Considering the gains and the insertion losses, the output wavelength of the Tm:YAG laser was estimated to be 2012.47 nm. Using this method, as much as 574 mW SLM laser was obtained experimentally, corresponding to a slope-efficiency of 18.6% and an optical-to-optical efficiency of 8.2%. The output wavelength was measured to be 2012.47 nm, which was in excellent agreement with the theoretical result. The power instability was less than 1% in 30 minutes test, and the degree of the linear polarization was over 20 dB.