High-speed 2×2 silicon-based electro-optic switch with nanosecond switch time

A 2× 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach--Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of 1~mm in length and cross-section of 400~nm× 340~nm. The measurement results show that the switch has a V_πL_π figure of merit of 0.145~V\cdot cm and the extinction ratios of two output ports and cross talk are 40~dB, 28~dB and -28~dB, respectively. A 3~dB modulation bandwidth of 90~MHz and a switch time of 6.8~ns for the rise edge and 2.7~ns for the fall edge are also demonstrated.     

Fabrication and characterization on an organic/inorganic 2 × 2 Mach–Zehnder interferometer thermo-optic switch

An organic/inorganic hybrid 2 × 2 directional coupler (DC) Mach–Zehnder interferometer (MZI) thermo-optic (TO) switch was successfully designed and fabricated using simple direct ultraviolet photolithography process. The hybrid organic/inorganic waveguide structure includes poly-methyl-methacrylate-glycidyl-methacrylate (P(MMA-GMA)), SU-8 2005 and silica as core, upper cladding and under cladding, respectively. Device optimization and simulation were performed to decrease radiation loss and leakage loss, quicken response time and cut down power consumption. Measurements of the fabricated devices at 1550 nm wavelength result in a switching power of 7.2 mW, a response time of ∼100 μs, and crosstalk of −22.8 and −26.5 dB under cross state and bar state, respectively. Besides, the driving-noise-tolerance characteristics of this device were experimentally investigated by directly imposing a generated tunable noise on the pure driving signal (4 V_pp) and the minimum extinction ratio is larger than 18 dB under a noise level of 2.5 V_pp. The effect of noise on extinction ratio was found decreased with the increase of noise frequency.     

Fast response 2×2 thermo-optic switch with polymer/silica hybrid waveguide

A polymer/silica hybrid 2×2 multimode-interference Mach-Zehnder interferometer thermo-optic (TO) switch is designed and fabricated. Instead of polymer, silica is used as under-cladding to accelerate heat release because of its large thermal conductivity. The developed switch exhibits low power consumption of 6.2 mW, low crosstalk of about -28 dB, and short response time. The rise and fall times of 103 and 91 μs for this hybrid switch are shortened by 40.8% and 52.4%, respectively, compared with those of the fabricated TO switch (174 and 191 μs) using polymer as both upperand under-claddings.     

Response-time improvement of a 2×2 thermo-optic switch with polymer/silica hybrid waveguide

A polymer/silica hybrid 2×2 directional coupler (DC) Mach–Zehnder interferometer (MZI) thermo-optic (TO) switch is designed and carefully fabricated. Because of larger thermal conductivity relative to the polymer, silica is utilized as bottom cladding for accelerating heat release. The fabricated TO switch with polymer/silica hybrid structure exhibits low power consumption, less than 7.2 mW, fast rise time of about 106 μs and fast fall time of about 93 μs. This response time is reduced by 40% compared to that of the TO switch with polymer waveguide.     

Ho:LaF3 single crystal as potential material for 2 μm and 2.9 μm lasers

Optical properties of a Ho-doped LaF₃ single crystal have been detailed investigated as a promising material for 2 μm and 2.9 μm lasers for the first time. Judd–Ofelt theory was applied to analyze the absorption spectrum to determine the J–O intensity parameters Ω_t(t=2,4,6), based on which the emission probabilities, branching ratio and radiative lifetime for the as-grown crystal were all calculated. The stimulated emission cross-sections of the ⁵I₇ → ⁵I₈ and ⁵I₆ → ⁵I₇ transitions were obtained by using the Fuchtbauer–Ladenburg method. The gain cross-section for 2 μm emission becomes positive once the population inversion level reaches 30%. The Ho:LaF₃ crystal shows long fluorescence lifetime of ⁵I₇ manifold (25.81 ms) as well as ⁵I₆ manifold (10.37 ms) compared with other Ho³⁺-doped crystals. It can be proposed that the Ho:LaF₃ crystal may be a promising material for 2 μm and 2.9 μm laser applications.     

1.55μm大光腔激光器

高功率1.55μm激光器长期以来一直为人们所重视和追求.本文通过合理设计,采用适宜的生长技术,首次成功地制备了大光腔结构,从而实现了脉冲输出功率高达2W以上的激光器.器件还具有阈值电流低(宽接触型结构的J_(th)≤2.7kA/cm~2),温度稳定性高(T_0≈130K)的特点,同时具有良好的光谱模式,是这一波段的理想光源.     

GaSb-based mid-infrared 2–5 μm laser diodes

Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-infrared (2–5 μm spectral domain) are needed for applications such as high sensitivity gas analysis by tunable diode laser absorption spectroscopy (TDLAS) and environmental monitoring. Such semiconductor devices do not exist today, with the exception of type-I GaInAsSb/AlGaAsSb quantum well laser diodes which show excellent room temperature performance, but only in the 2.0–2.6 μm wavelength range. Beyond 2.6 μm, type-II GaInAsSb/GaSb QW lasers, type-III ‘W’ InAs/GaInSb lasers, and interband quantum cascade lasers employing the InAs/Ga(In)Sb/AlSb system, all based on GaSb substrate, are competitive technologies to reach the goal of room temperature CW operation. These different technologies are discussed in this paper. To cite this article: A. Joullié, P. Christol, C. R. Physique 4 (2003).     

1.30μm／1.55μm SiGe多模干涉滤波器

用多模干涉原理分析和设计了光通信波长（１．３０μｍ～１．５５μｍ）的Ｓｉ１－ｘＧｅｘ／Ｓｉ滤波器，并用模的传播分析方法对其传输特性进行了研究。结果发现，在Ｇｅ含量ｘ＝０．０４时，干涉区的脊高和宽度分别为６．３５μｍ和８μｍ。如果多模干涉区长度ＬＭ＝２３０２．５μｍ，可滤１．３０μｍ而通１．５５μｍ的波长。且具有３１ｄＢ的对比度和０．０１ｄＢ的插入损耗；如果多模干涉区长度ＬＭ＝２５１２．５μｍ，可滤１．５５μｍ而通１．３０μｍ的波长。具有１６ｄＢ的对比度和０．０９ｄＢ的插入损耗。     

1.55μm单模激光管的研究

本文叙述了用液相外延法制得的1.55μm脊波导激光二极管。室温阈值电流100mA,单模线性输出5mW,光谱线宽小于2?,脉冲响应上升时间约为100ps。分析了影响阈值电流的诸因素,如有源层厚度d和掺杂水平等。也讨论了LD的输出模式与器件结构的关系。     

1.55μm单模激光管的研究

本文叙述了用液相外延法制得的1.55μm脊波导激光二极管。室温阈值电流100mA,单模线性输出5mW,光谱线宽小于2(?),脉冲响应上升时间约为100ps。分析了影响阈值电流的诸因素,如有源层厚度d和掺杂水平等。也讨论了LD的输出模式与器件结构的关系。     

Amplification characteristics measurement of 1.55 μm multi-mode LD

The amplification characteristics of 1.55 μm multi-mode LD are presented experimentally. It demonstrates that nine wavelengths across 1547–1557 nm have a good amplification, the maximum gain of ∼43 dB at 1552.14 nm is obtained with pump power of 130 mW @980 nm, and noise figure of ∼5.6 dB at 1554.3 nm is achieved.     

Welding of polymers using a 2 μm thulium fiber laser

Absorber-free transmission and butt-welding of different polymers were performed using thulium fiber laser radiation at the wavelength 2 μm. The relations between the laser process conditions and the dimensions and quality of the seam were investigated by means of optical and phase-contrast microscopy. Mechanical properties of the weld joints were studied in tensile strength tests. Laser-welded polyethylene samples revealed a tensile strength of greater than 80% of the bulk material strength. Transmission welding of different polymer combinations featured the formation of different joint classes depending on the spectral properties. The experiments demonstrate new application areas of mid-IR fiber laser sources for materials processing.     

1.55 μm distributed feedback (DFB) lasers subject to strong 1.4 μm optical injection

An experimental analysis of the influence of optical injection at 1.4 μm wavelength into two different commercial 1.55 μm DFB lasers is reported. The results demonstrate the strong dependence of the DFB behaviour on the injection parameters. Complete mode suppression or signal amplification can be obtained by varying the excitation wavelength and/or intensity, suggesting that these devices could be operated as logic ports or signal amplifiers, according to the injected signal.     

Gallium-nitride-based plasmonic multilayer operating at 1.55 μm

In this Letter, we have designed and fabricated a III-V semiconductor multilayer based on surface plasmon resonance (SPR) operating at the telecom wavelength. Optimization of the optogeometrical parameters and the metal/semiconductor layers required for this novel structure was conducted accurately by theoretical tools using the Maxwell equations. Technological fabrication of the device and its experimental characterizations using an evanescent coupling configuration was performed: the results have confirmed the existence of SPR associated to a sharp width response. This study could be a first step in the design of new plasmonic-semiconductor-based optical devices such as modulators and switches.     

1.55μm InGaAsP/InP LED的研究

本文报导了1.55μm InGaAsP/InP LED的制造工艺和性能测量.在100mA正向电流下,LED与多模光纤和单模光纤耦合后的出纤功率分别为20～30μW和2—4μW.讨论了获得准确p-n结位置的方法.     

1.55-μm Si-based MOEMS optical tunable filter

A prototype 1.55-μm Si-based micro-opto-electro-mechanical-systems (MOEMS) tunable filter is fabricated, employing surface micromachining technology. Full-width-at-half-maximum (FWHM) of the transmission spectrum is 23 nm. The tuning range is 30 nm under 50-V applied voltage. The device can be readily integrated with resonant cavity enhanced (RCE) detector and vertical cavity surface emitting laser (VCSEL) to fabricate tunable active devices.     

Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 μm

A method for fabrication of long-wavelength narrow line-width InGaAs resonant cavity enhanced (RCE) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 μm has been developed. A full width at half maximum (FWHM) of 0.7 nm and a peak responsivity of 0.16 A/W at the resonance wavelength of 1.55 μm have been accomplished by using a thick InP layer as part of the resonant cavity. The effects of roughness and tilt of the InP layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the RCE photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested.     

Distinction investigation of InGaAs photodetectors cutoff at 2.9 μm

Using double heterojunction structure with linearly graded In_xAl_1–xAs as buffer layer and In_0.9Al_0.1As as cap layer, wavelength extended In_0.9Ga_0.1As detectors with cutoff wavelength of 2.88 μm at room temperature have been grown by using gas source molecular beam epitaxy, their characteristics have been investigated in detail and compared with the detectors cutoff at 2.4 μm with similar structure as well as commercial InAs detectors. Typical resistance area product R₀A of the detectors reaches 3.2 Ω cm² at 290 K. Measured peak detectivity reaches 6.6E9 cm Hz^1/2/W at room temperature.