Diode-pumped Q-switched and mode-locked Nd:Gd0.3Lu0.33Y0.37VO4 laser with EO modulator and single-walled carbon nanotube

By using both the single-walled carbon nanotube saturable absorber (SWCNT-SA) and the electro-optic (EO) modulator, the stably doubly Q-switched and mode-locked (QML) operation of Nd:Gd_0.3Lu_0.33Y_0.37VO₄ laser has been demonstrated. The QML laser characteristics such as the pulse width, single-pulse energy, etc., have been measured for different modulation frequencies of the EO modulator (f_e) and reflectivity (R) of output coupler. In comparison with the solely passively QML laser with SWCNT-SA, the experimental results show that the doubly QML laser can generate more stable and shorter pulses with higher pulse energy. At 9.24 W pump power, f_e=1 kHz and R=93.5%, the doubly QML laser has compressed the Q-switched envelope pulse width 88% and improved the mode-locked pulsed energy 55 times.     

Diode-pumped doubly Q-switched Nd:Lu0.33Y0.37Gd0.3VO4 laser with an electro-optic modulator and a single-walled carbon nanotube saturable absorber

By simultaneously using an electro-optic (EO) modulator and a single-walled carbon nanotube saturable absorber (SWCNT-SA) in the cavity, a diode-pumped doubly Q-switched Nd:Lu_0.33Y_0.37Gd_0.3VO₄ (Nd:LuYGdVO₄) laser is demonstrated. At the incident pump power 11.43 W and f=2 kHz, the minimum pulse width 17.6 ns and the maximum pulse peak power 19,886 W can be obtained. The experimental results show that this doubly Q-switched Nd:LuYGdVO₄ laser can generate shorter pulse width and higher peak power compared to the singly Q-switched Nd:LuYGdVO₄ laser with only EO or SWCNT-SA.     

Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Numerical solutions of diode-pumped dual-loss-modulated Q-switched and mode-locked green laser with acousto-optic modulator and Cr: YAG saturable absorber

By considering the influence of the acousto-optic (AO) modulator and the nonlinear loss due to harmonic conversion in the intra-cavity frequency-doubling laser, a developed rate equation model for diode-pumped dual-loss-modulated Q-switched and mode-locked (QML) Nd:LuVO₄/KTP green laser with acousto-optic (AO) modulator and Cr⁴⁺:YAG saturable absorber is presented. With this developed model, the pulse width, single-pulse energy and the other dual-loss-modulated QML green laser characteristics are numerically simulated. The simulation results show that the turnoff time is of great importance for the pulse energy and pulse width of the Q-switched pulse. A diode-pumped dual-loss-modulated QML Nd:LuVO₄/KTP laser is constructed to successfully demonstrate the numerical simulation application.     

Double-loss-modulated q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser at 1.34 μm with single-walled carbon nanotube saturable absorber and AO modulator

A diode-pumped dual-loss-modulated Q-switched and mode-locked (QML) Nd:Lu_0.15Y_0.85VO₄ laser at 1.34 μm with single-walled carbon nanotube saturable absorber (SWCNT-SA) and acousto-optic (AO) modulator is demonstrated. The modulation depth of the dual-loss-modulated QML laser reaches 90%, being deeper than 75% that obtained by the single passively QML laser. The stability of the hybrid QML laser is significantly improved if compared to that only with SWCNT-SA. The Q-switched pulse energy and the Q-switched pulse width of the QML laser with the dual-loss-modulation are 487 and 27% of those only with SWCNT-SA, respectively.     

Diode-pumped passively Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with a GaAs saturable absorber

By using a-cut Nd:Lu_0.15Y_0.85VO₄ mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of 6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about 275 ps. The experimental results show that Nd:Lu_0.15Y_0.85VO₄ is a promising mixed crystal for QML laser.     

Theoretical and experimental study of single mode-locking pulse generation with low repetition rate in a dual-loss-modulated QML YVO4/Nd:YVO4 laser with EO and GaAs

Using electro-optic (EO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser at 1.06 μm is realized. The experimental results show that the number of the mode-locking pulses underneath the Q-switched envelope decreased with increasing pump power. With an output coupling of 6.5 %, the single mode-locking pulse underneath the Q-switched envelope with 1 kHz repetition rate was obtained when the pump power exceeded 4.65 W. At a pump power of 8.25 W for an output coupling of 10 %, a stable mode-locking pulse train at a repetition rate of 1 kHz was achieved with pulse energy as high as 582 μJ and pulse duration of about 580 ps, corresponding to a peak power of 1 MW. Using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled rate equations for diode-pumped doubly QML YVO₄/Nd:YVO₄ laser are given and the numerical solutions of the equations are basically in accordance with the experimental results.     

Characteristics of diode-pumped dual-loss-modulated Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser

A diode-pumped dual-loss-modulated Q-switched and mode-locked (QML) Nd:Lu_0.15Y_0.85VO₄ laser with acousto-optic (AO) modulator and Cr⁴⁺:YAG saturable absorber is presented. The stable QML laser pulse with high peak power and complete modulation depth has been obtained. The QML laser characteristics such as the pulse width, single-pulse energy etc. have been measured for different small-signal transmissions (T ₀) of Cr⁴⁺:YAG, different reflectivity (R) of output coupler and modulation frequencies of the AO modulator (f _p ). The results show that the pulse energy increases with decreasing f _p and increasing T ₀, while the pulse width decreases with decreasing f _p and increasing T ₀. At f _p = 10 kHz, R = 90%, and T ₀ = 91%, the highest pulse energy and peak power of mode-locked pulses is obtained.     

Diode-pumped Q-switched and mode-locked Nd:LuVO4/KTP green laser with AO and Cr4+:YAG saturable absorber

A diode-pumped Q-switched and mode-locked (QML) Nd:LuVO₄/KTP green laser with acousto-optic modulator (AOM) and Cr⁴⁺:YAG saturable absorber is presented. By inserting an AOM into the laser cavity, the stability of the QML green laser pulse with AO and Cr⁴⁺:YAG is improved, the modulation depth is increased and the pulse width of Q-switched pulse envelope is significantly compressed in comparison with that of the singly passively QML green laser with Cr⁴⁺:YAG. The experimental results show that the peak power of the doubly QML green laser pulse is much higher than that of the singly passively QML green laser pulse.     

2 μm passive Q-switched mode-locked Tm3+:YAP laser with single-walled carbon nanotube absorber

We report the first demonstration, to our knowledge, of passive Q-switched mode-locking in a Tm³⁺:YAP laser, operating in the 2 μm broadly spectral region formed with a compact Z-flod cavity. A transmission-type single-walled carbon nanotube saturable absorber (SWCNT–SA) is used for the initiation of the pulse generation. The repetition rate of the Q-switched envelope was 60 kHz at the pump power of 8.6 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of ～92 MHz. A maximum average output power of 761 mW was obtained. The dependence of the operational parameters on the pump power was also investigated experimentally.     

Optimization of diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4 laser with a GaAs saturable absorber

By considering the single-photon absorption (SPA) and two-photon absorption (TPA) processes in the GaAs saturable absorber, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with GaAs coupler under Gaussian approximation are given. The key parameters of an optimally coupled passively QML laser can be obtained by numerically solving these equations. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. Sample calculations for a diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO₄ laser with a GaAs saturable absorber are presented to demonstrate the optimal method applicable.     

Passively Q-switched a-cut Nd:GdVO4 self-Raman laser with Cr:YAG

A passively Q-switched a-cut Nd:GdVO₄ self-Raman solid-state laser with Cr:YAG saturable absorber was firstly demonstrated. The first Stokes at 1173 nm was successfully obtained. At the maximum incident pump power, the pulse width was about 1.8 ns and the repetition rate was 27.5 kHz. 586.5 nm yellow laser output was also realized by use of an LBO frequency doubling crystal.     

Analysis of a laser-diode end-pumped intracavity frequency-doubled passively Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/KTP laser with a semiconductor saturable absorber

A diode-pumped passively Q-switched mode-locked (QML) intracavity frequency-doubled Nd:GdVO₄/KTP green laser with a semiconductor saturable absorber is presented. Nearly 100% modulation depth for the mode-locked green pulses can be achieved at any pump power over 1.92 W. The width of the mode-locked green pulse was estimated to be about 150 ps. The mode-locked pulse interval within the Q-switched envelope of 320 ns and the repetition rate of 97.5 kHz were obtained, at an incident pump power of 4.4 W. The repetition rate of the mode-locked green pulses inside the Q-switched envelope was 140 MHz.     

Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO₄ laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 μJ, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz.     

Experimental study on doubly QML Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with AO modulator and central SESAM

By using double-mixed crystal Nd:Lu_0.15Y_0.85VO₄ as laser medium, a diode-pumped doubly Q-switched and mode-locked (QML) Nd:Lu_0.15Y_0.85VO₄ laser with acousto-optic (AO) modulator and central semiconductor saturable absorption mirror (SESAM) is realized for the first time. The Q-switched envelope modulation depth is nearly 100%.The average output power and the pulse width of the Q-switched envelope etc. for different AO modulator repetition rates have been measured. The experimental result show that Nd:Lu_0.15Y_0.85VO₄ crystal is an excellent laser medium for doubly QML lasers.     

1.34 μm fluorescence and laser properties of Nd:La0.11Y0.89VO4 crystal

For Nd:La_xY_1−xVO₄ (x = 0.11) crystal, the ⁴F_3/2 → ⁴I_13/2 transition property was investigated for the first time. The fluorescence peak of Nd:La_0.11Y_0.89VO₄ crystal exhibited obvious inhomogeneous broadening comparing with that of Nd:YVO₄ crystal. With laser diode array as pump source, 1.34 μm continuous-wave (CW) and active Q-switched laser operations based on ⁴F_3/2 → ⁴I_13/2 transition were realized. For CW laser operation, the maximum output power of 2.47, 2.13 W is obtained with slope efficiencies of 29.4%, 27.6%, and optical to optical conversion efficiency of 26.2%, 24.7%, respectively for a, c cut crystal samples. For acousto-optic (AO) Q-switched laser operation, the shortest pulse width, highest peak power and maximum pulse energy came from the a-cut sample, which were 13 ns, 2.69 kW and 35 μJ, respectively.     

Diode array pumped, non-linear mirror Q-switched and mode-locked Nd : YVO4 laser — a good tool for powder SHG measurement

A non-linear mirror consisting of a lithium triborate crystal and a dichroic output coupler are used to mode-lock (passively) an Nd : YVO₄ laser, pumped by a diode laser array. The laser can operate both in cw mode-locked and simultaneously Q-switched and mode-locked (QML) regime. The peak power of the laser while operating in QML regime is much higher but pulses suffers from poor amplitude stability. The incorporation of an acousto-optic modulator as an active Q-switch enhances the stability of the QML pulse envelope. The second-order non-linearity of powdered crystalline urea is conclusively measured with respect to KDP while the laser is operating in passively Q-switched and passively mode-locked regime as well as in actively Q-switched and passively mode-locked regime.     

Laser diode end-pumped passively Q-switched Tm,Ho:YLF laser with Cr:ZnS as a saturable absorber

Output performance of a continuous-wave (CW) laser diode end-pumped passively Q-switched Tm,Ho:YLF laser is demonstrated with a Cr:ZnS crystal as the saturable absorber. We particularly investigate the influence of saturable absorber's position in the resonator when the Cr:ZnS crystal is placed close to and far from the laser beam waist. We compare the experimental results at the two different positions, and find that the laser shows unusual output characteristics when the Cr:ZnS saturable absorber is placed close to the beam waist. The pulse width and the pulse energy almost keep constant, measured about 1.25 μs and 4 μJ respectively, when the pump power is changed in the range of 1–1.9 W. Moreover, the pulse repetition frequency can be tuned between 1.3 kHz and 2.6 kHz by changing the pump power. The output wavelength of the passively Q-switched laser shifts to 2053 nm from 2067 nm in CW operation.     

Ultrafast laser performance of Yb3 +: Sc2SiO5 crystal with a single-walled carbon nanotube absorber

Single-walled carbon nanotube (SWCNT) absorber fabricated by vertical evaporation is used in passively mode-locked Yb^3 +:Sc₂SiO₅ (Yb:SSO) ultrafast laser for the first time. The performance of Yb:SSO ultrafast laser with pulse width as short as 880 fs is studied and the average output power is 712 mW. To our knowledge, this is the highest output power of femtosecond lasers with SWCNT-SAs reported. In addition, we firstly demonstrate a passively mode-locked picosecond Yb:SSO laser without inserting any dispersion compensation device. The pulses width is as short as 5.4 ps and the output power is 940 mW.     

Diode-pumped continuous-wave and passively Q-switched 1.06 μm YVO4/Nd:GdVO4 laser

In this letter, a diode-pumped continuous-wave and passively Q-switched 1.06 μm laser with a novel composite YVO₄/Nd:GdVO₄ crystal was demonstrated for the first time. Theoretical calculations showed that the temperature distribution in YVO₄/Nd:GdVO₄ crystal was lower than that in GdVO₄/Nd:GdVO₄ and Nd:GdVO₄ crystals under the same conditions. After optimizing the mode matching degree, a CW output power of 5.6 W of YVO₄/Nd:GdVO₄ laser was obtained at the incident pump power of 12 W when the output coupler with transmission of 30% was employed. Using Cr^4 +:YAG crystals with initial transmission (T₀) of 80% and 90% as saturable absorbers, the pulsed YVO₄/Nd:GdVO₄ laser characteristics were investigated. At the incident pump power of 12 W, the maximum average output power of 2.76 W and the maximum repetition rate of 189 kHz was achieved when T₀ = 90% Cr^4 +:YAG was used. The shortest pulse width was 28.1 ns when the initial transmission of the used Cr^4 +:YAG was 80%.