共查询到20条相似文献,搜索用时 15 毫秒
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A new method of controlling the amplified spontaneous emission (ASE) from Yb3 + ions in Er3 +/Yb3 + co-doped fiber amplifiers is presented. The 1 μm ASE is suppressed by stimulating a laser emission at 1064 nm in a fiber amplifier, due to a positive feedback for the 1 μm signal. The results are compared to a conventional amplifier setup without any ASE control. We have shown, that applying a feedback loop in an Er3 +/Yb3 + co-doped fiber amplifier allows higher power scaling and provides operation without unwanted parasitic lasing effects, increasing the stability and robustness of the amplifier. 相似文献
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Thulium doped fiber amplifier is a good candidate for S, and S+ band. This paper demonstrated a three pump pumping scheme for thulium doped fiber amplifier with 1050 nm co propagating pump and 1400 nm and 800 nm counter propagating pumps with a total pumping power 600 mW. This configuration yields up to 33 dB gain in 20 nm region from 1460 nm to 1480 nm, with noise figure <4 dB. To the knowledge of authors it is the highest gain achieved by thulium-doped amplifier in a single pass configuration with good power conversion efficiency. 相似文献
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Pingxue Li Guoshun Zhong Zhi Liu Junjie Chi Xuexia Zhang Chun Yang Ziqiang Zhao Yao Li Xiongfei Wang Hong Zhao Dongsheng Jiang 《Optics & Laser Technology》2012,44(7):2202-2205
In this paper, we report on a large-mode-area double-clad 980 nm Yb-doped photonic crystal fiber (PCF) amplifier. In the experiment, an output power of 1.21 W at 980 nm with 2.5 nm bandwidth has been yielded when the PCF length was 40 cm. Through frequency doubling the 980 nm amplified laser with a BIBO crystal, an output power of 51 mW at 490 nm has been generated. 相似文献
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J. Kerttula V. Filippov Y. Chamorovskii V. Ustimchik K. Golant O. G. Okhotnikov 《Laser Physics》2012,22(11):1734-1738
We present a high-power ytterbium fiber amplifier based on active tapered double-clad fiber (T-DCF) and capable of high single-pass gain. The T-DCF power amplifier seeded with a 320 mW narrow-band signal generates up to 110 W of average output power corresponding to more than 25 dB gain. The amplifier exhibits near-diffraction-limited beam quality (M 2 = 1.06) at the highest output power, which was limited by the available pump power. With a broadband seed source, the amplifier produced a gain of nearly 40 dB obtained for low-signal limit of the seed. The high output power combined with high gain is achieved owing to amplified spontaneous emission (ASE) filtering and increased stimulated Brillouin scattering (SBS) threshold inherent to the axially non-uniform geometry. The amplifier operates efficiently with a wide range of input seed powers thus providing the basis for one-stage tapered amplifier which combines the functions of preamplifier and power amplifier and can be a competitive alternative to multi-stage design. 相似文献
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从光纤热传导方程出发,研究了不同泵浦光吸收系数对光纤激光器沿光纤长度方向温度分布的影响。结果表明,低吸收系数光纤泵浦端温度相对较低,分布较为平缓,有效减缓光纤的热损伤。根据理论分析结果,实验中选择了吸收系数为1.45 dB/m的掺Yb3+双包层光子晶体光纤作为增益介质,在泵浦光功率为560 W时,获得了428.5 W的高功率单模连续输出,斜率效率为76.5%,光束质量因子M2<1.2。由于泵浦端光纤温度较高,实验中对光纤两端进行了主动冷却,并且在离光纤端面约25 cm处的光纤表面温度进行实时测量,结果发现随着泵浦光功率的增加,光纤表面温度均匀增长,最高温度为310 K,温度正常。 相似文献
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从光纤热传导方程出发,研究了不同泵浦光吸收系数对光纤激光器沿光纤长度方向温度分布的影响。结果表明,低吸收系数光纤泵浦端温度相对较低,分布较为平缓,有效减缓光纤的热损伤。根据理论分析结果,实验中选择了吸收系数为1.45 dB/m的掺Yb3+双包层光子晶体光纤作为增益介质,在泵浦光功率为560 W时,获得了428.5 W的高功率单模连续输出,斜率效率为76.5%,光束质量因子M2<1.2。由于泵浦端光纤温度较高,实验中对光纤两端进行了主动冷却,并且在离光纤端面约25 cm处的光纤表面温度进行实时测量,结果发现随着泵浦光功率的增加,光纤表面温度均匀增长,最高温度为310 K,温度正常。 相似文献
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在器件设计上,针对低功率驱动的高功率微波放大器或高增益放大器中的高次模激励和自激振荡问题,采取了降低电子束同器件前端结构耦合等措施,来保证器件在工作区间完全处于放大状态,通过PIC模拟,设计了低功率驱动的S波段高功率微波放大器(电子束:流强7.5 kA,电子能量750 kV),注入微波6.8 kW时,模拟微波输出功率1.7 GW,增益53.9 dB.在Sinus加速器平台上开展了相应的实验研究: 注入微波62 kW时,微波输出功率达到2.04 GW(电子束:流强8 kA,电子能量800 kV), 输出频率
关键词:
高功率微波
微波器件
高增益
模式控制 相似文献
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Peihong Cheng Huili Zhu Ying Bai Yanke Zhang Tingchao He Yujun Mo 《Optics Communications》2007,270(2):391-395
Silicon nanostructures are dispersed into an organic solvent and the third order optical properties of the system are studied by z-scan technique under 1064 nm and 532 nm excitations. The experiment results show that the silicon nanostructures exhibit self-focus and saturable absorption with both excitation wavelengths. Nonlinear absorption results suggest that a new optical bleaching band exists under 532 nm excitation, and a two-step mechanism is tentatively put forward to explain the saturable absorption under 1064 nm excitation. 相似文献
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An oscillator-amplifier XeCl laser system has been used to experimentally investigate the effectiveness of a liquid stimulated Brillouin scattering (SBS) mirror for correcting the spatial aberrations of broad-band laser radiation in a double-pass amplifier. It has been found that the SBS amplifier performance is strongly dependent on the intensity I
p exciting the Brillouin medium. A good beam reconstruction has been attained at I
p1GW/cm2, whereas highly aberrated output beams have been delivered by the SBS amplifier for I
p>1 GW/cm2. By comparing the broad-band SBS amplifier performance to that of the same amplifier with a dielectrically coated flat mirror at one end, it has been found that the use of a SBS mirror is advantageous to obtain lower divergence output beams only for low energy pump beams (<1 mJ). 相似文献
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S.W. Harun H.A. Abdul-Rashid S.Z. Muhd-Yassin M.K. Abd-Rahman K.K. Jayapalan H. Ahmad 《Optics & Laser Technology》2008,40(1):88-91
An efficient erbium–ytterbium-doped fiber amplifier (EYDFA) is demonstrated by forward and backward pumping a 3 m erbium/ytterbium co-doped fibers (EYDF) in single- and double-pass configurations using a 20 mW pump. At the input signal wavelength of 1536 nm, the forward- and backward-pumped double-pass amplifiers achieved a maximum low-signal gain of 37.2 and 28.6 dB and a corresponding noise figure of 5.4 and 10.8 dB, respectively. Whereas, the forward- and backward-pumped single-pass amplifiers (at the same wavelength) achieved a maximum low-signal gain of 20.0 and 22.2 dB and a corresponding noise figure of 4.6 and 10.3 dB, respectively. The double-pass design offers an economical solution to high-efficiency and high-gain optical amplifiers. 相似文献
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Aleksey Tyazhev Georgi Marchev Valeriy Badikov Adolfo Esteban‐Martin Dmitrii Badikov Vladimir Panyutin Galina Shevyrdyaeva Svetlana Sheina Anna Fintisova Valentin Petrov 《Laser \u0026amp; Photonics Reviews》2013,7(4):L21-L24
The defect chalcopyrite crystal HgGa2S4 has been employed in a 1064‐nm pumped optical parametric oscillator operating at 100 Hz, to generate ∼5 ns long idler pulses near 4 µm with energies as high as 6.1 mJ and average power of 610 mW. At crystal dimensions comparable to those available for the commercial AgGaS2 crystal, operation of the 1064‐nm pumped HgGa2S4 OPO is characterized by much lower pump threshold and higher conversion efficiency, with the most important consequence that such a device might become practical at pump levels sufficiently lower than the optical damage threshold. 相似文献
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The numerical study on the performance of large-mode-area (LMA) fibers coiled onto a spool in high power amplifier is carried out as the bend-induced distortion of fiber modes severely affects the output characteristics of amplifier systems. The variations for high-order mode bend distortion with different orientations relative to the plane of the fiber bend are observed and shown. Concerning the practical applications, a bend-resistant LMA fiber with the mode area larger than 1000 μm^2 and excellent highorder mode suppression is designed completely by optimizing the refractive index (RI) and dopant profile. The results indicate that a hybrid profile of RI and dopant is the best choice for LMA fiber with coiling. 相似文献
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Thin film beam splitters with high reflectivity at 532 nm and high transmittance at 1064 nm were deposited via reactive electron-beam evaporation with optimized parameters. The damage performance of the samples was investigated under irradiations of 532 nm laser only, 1064 nm laser only, and various combined laser fluences. The damages induced by the 1064 nm laser were primarily attributed to the initiators at the interface between the coatings and substrate. Under 532 nm laser irradiation only, two distinctive damage pits initiated by the submicron absorptive defects located at different coating depths and correlated to interfaces were observed. The damage effect under simultaneous irradiation in multilayer films was also investigated. The respective sensitive defects of the two lasers remained the precursors for causing damage. However, the dominant damage factors in simultaneous irradiation changed with the 1064 nm laser fluence, which also determined the coupling effect between the two lasers in terms of causing damage. Finally, correlative analysis methods were used to discuss the different coupling effects. 相似文献
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运用掺镱双包层光纤放大器的理论模型,分析了连续和脉冲光放大时放大自发辐射(ASE)的计算方法。采用Runge-Kutta方法求解了考虑ASE稳态时掺镱双包层光纤放大器的放大特性,采用有限差分法求解了矩形、高斯和超高斯脉冲的放大特性。结果表明:用3 m长的双包层光纤、10 W的泵浦功率可以将脉宽3 ns、峰值功率为1 W的脉冲信号光峰值功率放大到15 kW左右;在饱和增益情况下,脉冲的波形变尖,宽度变窄;采用短的大模场双包层光纤和后向泵浦方式可以有效地降低ASE,并避免有害非线性效应。 相似文献