A novel Si-based photodetector with flat-top and steep-edge spectral response

To meet the requirement of the dense wavelength-division-multiplexed (DWDM) system and optoelectronic integrated circuit, we design a Si-Based InGaAs photodetector, which is fabricated by bonding InGaAs/InP photodetector on a Si-Based dielectric film Fabry–Perot filter. The photodetector can exhibit an extremely good flat-top and steep-edge spectral response through designing the structure of Si-Based dielectric film Fabry–Perot filter. The simulation result of phtodetector demonstrates that the spectral response linewidth, ?at-top and steep-edge characteristics of these photodetectors are suitable to be used in 50 GHz, 100 GHz, 200 GHz DWDM system.     

Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (RCE) photodetectors

With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of RCE p-i-n photodetectors (PD) by superimposition of multiple reflected lightwaves. For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE p-i-n PD excluding the transit time of the carriers and RC_d response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE p-i-n PD when its active layer is thinner than several 10~nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE p-i-n PD.     

Highly sensitive polymer photodetectors with a wide spectral response range

A series of highly sensitive polymer photodetectors(PPDs) was fabricated with P3HT100-x:PBDT-TS1x:PC71BM1 as the active layers, where x represents the PBDT-TS1 doping weight ratio in donors. The response range of PPDs can cover from the UV to near-infrared regions by adjusting the PBDT-TS1 doping weight ratio. The best external quantum efficiency(EQE) values of ternary PPDs with P3HT:PBDT-TS1:PC_(71)BM(50:50:1 wt/wt/wt) as the active layers reach 830%, 720%,and 330% under 390-, 625-, and 760-nm light illumination and-10 V bias, respectively. The large EQE values indicate that the photodetectors utilise photomultiplication(PM). The working mechanism of PM-type PPDs can be attributed to interfacial trap-assisted hole tunnelling injection from the external circuit under light illumination. The calculated optical field and photogenerated electron volume density in the active layers can well explain the EQE spectral shape as a function of the PBDT-TS1 doping weight ratio in donors.     

Review of improved spectral response of ultraviolet photodetectors by surface plasmon

Ultraviolet(UV) photodetectors based on wide band gap semiconductor have attracted much attention for their small volume, low working voltage, long lifetime, good chemical and thermal stability. Up to now, many researches have been done on the semiconductors based UV detectors and some kinds of detectors have been made, such as metal–semiconductor–metal(MSM), Schottky, and PIN-type detectors. However, the sensitivity values of those detectors are still far from the expectation. Recent years, surface plasmon(SP) has been considered to be an effective way to enhance the sensitivity of semiconductor based UV photodetector. When the light is matched with the resonance frequency of surface plasmon, the localized field enhancement or scattering effect will happen and thus the spectral response will be enhanced.Here, we present an overview of surface plasmon enhancing the performance of UV detectors, including the GaN, ZnO,and other wide band gap semiconductor UV detectors. Both fundamental and experimental achievements are contained in this review.     

Resonant cavity enhanced quantum ring photodetector at 20\,\upmu m wavelength

In this paper, in order to enhance the performance characteristics of photodetector, an InAs/GaAs quantum ring infrared photodetector (QRIP) with resonant cavity structure is proposed. For this purpose, distributed bragg reflectors (DBR) in the bottom of structure are used to reflect the transmitted beam back into the active region. For further confinement of light in the active region, a gold layer is added to structure as top reflector and the performance of structures is compared with and without top reflector. Numerical simulation results show that using resonant cavity structure can improve quantum efficiency and responsivity of photodetector. Furthermore, the specific detectivity of device can increase about one order of magnitude using resonant cavity structure. Results show specific detectivity, $\hbox {D}^{*}$ , about $\sim $ 10 $^{11}\,(\hbox {cm}\,\hbox {Hz}^{1/2}\hbox {/W})$ for conventional QRIP and $\sim $ 10 $^{12}\,(\hbox {cm}\,\hbox {Hz}^{1/2}\hbox {/W})$ for conventional QRIP embedded in resonant cavity. As a result of enhancement in detectivity, the operation temperature of detector can be increased up to about 150 K.     

Monolithically integrated tunable dual-wavelength photodetector with flat-top response

This paper elaborates the design and analysis of a novel monolithically integrated tunable dual-wavelength photodetector which can be formed by heteroepitaxial growth of an InP-based p-i-n absorption structure on a GaAs-based Fabry–Pérot filter. The photodetector presents two response peaks resulting from the introduction of 4-step Fabry–Pérot cavity. The wavelength spacing between the two peaks, as well as the peak shapes, can be accurately and easily tailored by adjusting the corresponding step height. This photodetector can be tuned via thermal-optic effect. With optimum design by using Transfer Matrix Method, the detectable wavelength range of the photodetector will be twice as that of its counterpart being with a uniform filter cavity; what is more, flat-top responses of the two peaks can also be obtained, simultaneously. We discuss the epitaxial growth and fabrication of the photodetector at the end, indicating the mature technique available for the device.     

计算波导加载谐振腔谐振频率的新方法

基于边界元法,提出了一种新的简单有效的计算速调管输出系统波导加载腔的谐振频率、场分布的方法。计算了一种矩形波导加载矩形谐振腔的常见结构。利用主模TE10波激励,在波导的端口处采用推导出的Robin-type边界条件,通过扫频的方式,观测选定场点的值,极值对应系统的谐振频率。数值结果表明:波导加载谐振腔的谐振频率要低于同尺寸谐振腔的频率,谐振腔内的电场分布也受到耦合孔的影响。利用边界元法计算波导加载腔这样的半开放系统,具有实现简单、计算精确度高、数据输入少、计算时间短等优点。     

Performance of OCDMA systems with new spectral direct detection (SDD) technique using enhanced double weight (EDW) code

This paper investigates the performance of enhanced double weight (EDW) code for spectral-amplitude-coding OCDMA (SAC-OCDMA) system using a newly proposed spectral direct detection (SDD) technique. EDW is the enhanced version of double weight (DW) code that possesses ideal cross-correlation properties and weight which can be any odd number greater than one. The theoretical and simulation results show that the proposed new spectral direct detection technique improves the performance compared to the conventional complementary subtraction technique.     

计算波导加载谐振腔谐振频率的新方法

基于边界元法,提出了一种新的简单有效的计算速调管输出系统波导加载腔的谐振频率、场分布的方法。计算了一种矩形波导加载矩形谐振腔的常见结构。利用主模TE10波激励,在波导的端口处采用推导出的Robin-type边界条件,通过扫频的方式,观测选定场点的值,极值对应系统的谐振频率。数值结果表明:波导加载谐振腔的谐振频率要低于同尺寸谐振腔的频率,谐振腔内的电场分布也受到耦合孔的影响。利用边界元法计算波导加载腔这样的半开放系统,具有实现简单、计算精确度高、数据输入少、计算时间短等优点。     

Optical resonance with subwavelength spectral coherence switch in open-end cavity

The physical properties of light fields at the subwavelength scale have emerged as extensively pursued objectives in nano-optics,photonics,and plasmonics.Here,we report that in the paraxial regime,the spectral density and the spectral axial coherence(z-coherence) structures in a submicron range can be generated by employing a light beam with a suitably chosen spatial coherence state in a counter-propagating configuration,in an open-end cavity.It is established that while the spectral density for...     

A study of direct- and pulse-current chromium electroplating on rotating cylinder electrode (RCE)

Direct- and pulse-current (DC and PC) chromium electroplating on Cr-Mo steel were performed in a sulfate-catalyzed chromic acid solution at 50 °C using a rotating cylinder electrode (RCE). The electroplating cathodic current densities were at 30, 40, 50 and 60 A dm⁻², respectively. The relationship between electroplating current efficiency and the rotating speed of the RCE was studied. The cross-sectional microstructure of Cr-deposit was examined by transmission electron microscope (TEM). Results showed that DC-plating exhibited higher current efficiency than the PC-plating under the same conditions of electroplating current density and the rotating speed. We found the critical rotating speed of RCE used in the chromium electroplating, above this rotating speed the chromium deposition is prohibited. At the same plating current density, the critical rotating speed for DC-plating was higher than that for PC-plating. The higher plating current density is, the larger difference in critical rotating speeds appears between DC- and PC-electroplating. Equiaxed grains, in a nanoscale size with lower dislocation density, nucleate on the cathodic surface in both DC- and PC-electroplating. Adjacent to the equiaxed grains, textured grains were found in other portion of chromium deposit. Fine columnar grains were observed in the DC-electroplated deposit. On the other hand, very long slender grains with high degree of preferred orientation were detected in PC-electroplated deposit.     

Resonant photoemission from SmS(100)

A strong, sharp resonance enhancement of 4f photoemission has been observed on SmS(100) surfaces for photon energies in the region of the 4d-4f transitions at about 126 eV. The discrete final state reached via the excitation hν+4d¹⁰4f⁶→4d⁹4f⁷ autoionizes primarely via a super Coster-Kronig transition of the type 4d⁹4f⁷→4d¹⁰4f⁵ + unbound electron. Other decay channels, e.g, Sm 5p emission, as well as a surface induced binding energy shift in the Sm³⁺ final state are identified and discussed.     

Design and performance of two-channel EUV multilayer mirrors with enhanced spectral selectivity

In this paper, we present a study on two-channel multilayer mirrors which can operate at two wavelengths in Extreme Ultraviolet (EUV) spectral range. We propose a new method to design two-channel EUV multilayer mirrors with enhanced spectral selectivity. The mirror structure is a stack of two periodic multilayers separated by a buffer layer. We have defined the main parameters which allow adjustment of the distance between different order Bragg’s peak and of wavelength positions of reflectivity minima. Two mirrors have been designed and deposited for solar EUV telescope applications by using this method. The first mirror reflects Fe IX–X line (17.1 nm) and Fe XVI (33.5 nm) lines with attenuation of the He II line (30.4 nm). The second mirror reflects Fe IX–X and He II lines with attenuation of Fe XV (28.4 nm) and Fe XVI lines. Measurements with synchrotron radiation source confirm that, in both cases, for these mirrors, we are able to adjust reflectivity maxima (Bragg peak position) and minima. Such multilayers offer new possibilities for compact design of multi-wavelength EUV telescopes and/or for high spectral selectivity.     

Surface enhanced infrared spectral investigation of 2,3-bis(chloromethyl)anthracene-1,4,9,10-tetraone on silver nanoparticles

The size effect of silver nanoparticles on photophysical properties of 2,3-bis(chloromethyl)anthracene-1,4,9,10-tetraone (BCMAT) has been investigated using an IR technique. Silver colloids of different sizes have been prepared by two different methods. Mechanisms for adsorption and complex formation have been elucidated from surface-enhanced infrared absorption spectra. The observation shows that BCMAT is adsorbed on silver nanoparticles through a C = O group and that its orientation is stand-on. Surface enhancement factors have been calculated. As the particles decrease in size their total surface area grows, which leads to the gain in the enhancement factor.     

Omnidirectional reflection and flat-top transmissionin Thue-Morse quasicrystal with single-negative materials

By means of transfer matrix method, we investigate the transmittance and reflectance of Thue-Morse (T-M) structure composed of negative-permittivity and negative-permeability materials. It is shown that the width and location of an omnidirectional reflectance band remain invariant with the change of generation order, and that the omnidirectional reflectance band is determined by both TE and TM polarization, which different completely from that in dielectric T-M structure. Moreover, a flat-top total transmission band occurs around the same frequency in which the general zero average permittivity and permeability are both satisfied in T-M structure. The basis for these phenomena are presented and discussed.     

Capture dynamics and far-infrared response in photovoltaic quantum well intersubband photodetectors

Recent progress in photovoltaic quantum well intersubband photodetectors (QWIP) makes these devices suitable for high-performance imaging and heterodyne detection. We report on investigations concerning the basic physics of the transport mechanism, the dynamical behavior, and the further optimization of these structures. GaAs/AlAs/AlGaAs double-barrier QWIPS designed for 3-5 μm wavelength operation provide an interesting model system to study the dynamical aspects of the photovoltaic response. We find strong evidence that carrier transfer across the AlAs barriers mainly occurs due to Γ-X intervalley scattering, even for AlAs layer thicknesses of 1-2 nm. We also discuss experimental results on photovoltaic QWIPs operating in the 8-12 μm regime. In these structures, photovoltaic operation is achieved using a combination of single-barrier quantum wells with built-in space-charge fields. We report on a photovoltaic QWIP with a cutoff energy of 118 meV and a zero-bias detectivity of 2.5×10⁹ cm√Hz/W, which is only three times less than the detectivity of a photoconductive QWIP with the same cutoff energy.     

Resonant interaction scheme for GHZ state preparation and quantum phase gate with superconducting qubits in a cavity

A scheme is proposed to generate GHZ state and realize quantum phase gate for superconducting qubits placed in a microwave cavity. This scheme uses resonant interaction between the qubits and the cavity mode, so that the interaction time is short, which is important in view of decoherence. In particular, the phase gate can be realized simply with a single interaction between the qubits and the cavity mode. With cavity decay being considered, the fidelity and success probability are both very close to unity.