Midinfrared photoluminescence from SnTe/PbTe/CdTe double quantum wells grown by molecular beam epitaxy

Molecular beam epitaxial growth and photoluminescence (PL) properties of SnTe/PbTe/CdTe double quantum wells (DQWs) on (1 0 0)-oriented GaAs substrates are reported. These DQWs were consisted of a very thin SnTe/PbTe QW nested in a 10-nm-thick PbTe/CdTe QW. Efficient midinfrared PL was observed from the DQWs at 300 K in agreement with the coherent SnTe/PbTe growth on the thick CdTe barrier layer. The PL peak wavelength of the DQWs was found to increase with the SnTe thickness d by covering a wide range of the 3–5 μm atmospheric window with d≤2.5 monolayer.     

Cascaded continuous-wave singly resonant optical parametric oscillator pumped by a single-frequency fiber laser

We present a cascaded continuous-wave singly resonant optical parametric oscillator (SRO) delivering idler output in mid-IR and terahertz frequency range. The SRO was pumped by an ytterbium-doped fiber laser with 27 W linear polarization pump powers, and based on periodically poled MgO:LiNbO₃ crystal (PPMgLN) in two-mirror linear cavity. The PPMgLN is 50 mm long with 29.5 μm period. The idler power output at 3811 nm was obtained 2.6 W. The additional spectral components that have been attributed to cascaded optical parametric processes are described at increasing pump levels. Besides the initial signal component at about 1476.8 nm, further generated wavelengths with frequency shifts about 47 cm^?1, 94 cm^?1 and 104 cm^?1 were observed. It was speculated that the idler waves lie in the terahertz (THz) domain from the observed results.     

Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice

In this paper, a mid-/long-wave dual-band detector which combined PπMN structure and unipolar barrier was developed based on type-II InAs/GaSb superlattice. A relevant 320 × 256 focal plane array (FPA) was fabricated. Unipolar barrier and PπMN structure in our dual band detector structure were used to suppress cross-talk and dark current, respectively. The two channels, with respective 50% cut-off wavelength at 4.5 μm and 10 μm were obtained. The peak quantum efficiency (QE) of mid wavelength infrared (MWIR) band and long wavelength infrared (LWIR) band are 53% at 3.2 μm under no bias voltage and 40% at 6.4 μm under bias voltage of −170 mV, respectively. And the dark current density under 0 and −170 mV of applied bias are 1.076 × 10⁻⁵ A/cm² and 2.16 × 10⁻⁴ A/cm². The specific detectivity of MWIR band and LWIR band are 2.15 × 10¹² cm·Hz^1/2/W at 3.2 μm and 2.31 × 10¹⁰ cm·Hz^1/2/W at 6.4 μm, respectively, at 77 K. The specific detectivity of LWIR band maintains above 10¹⁰ cm·Hz^1/2/W at the wavelength range from 4.3 μm to 10.2 μm under −170 mV. The cross-talk, selectivity parameter at 3.0 μm, about 0.14 was achieved under bias of −170 mV. Finally, the thermal images were taken by the fabricated FPA at 77 K.     

Optical investigation of InAs/InP(1 0 0) quantum dots grown by gas source molecular beam epitaxy

We report on the optical characteristics of InAs quantum dots based on the InP(1 0 0) substrate grown by gas source molecular beam epitaxy without assisting any other methods. The photoluminescence was carefully investigated by adjusting the thickness of InAs layers and the growth temperature. A wide range of emitting peaks is obtained with the increase in the thickness of InAs layers. In addition, we find that the morphology and shape of quantum dots also greatly depend on InAs layers. The images of atomic force microscopy show that the quantum dots like forming into quantum dashes elongated along the [0 1 ?1] direction when the thickness of InAs layers increased. A critical thickness of formation quantum dots or quantum dash is obtained. At the same time, we observe that the growth temperature also has a great impact on the emission wavelength peaks. High qualities of InAs/InP(1 0 0) quantum dots providing their emission wavelength in 1.55 μm are obtained, and good performances of quantum dots lasers are fabricated.     

Stability of widely tuneable,continuous wave external-cavity quantum cascade laser for absorption spectroscopy

The performance of widely tuneable, continuous wave (cw) external-cavity quantum cascade laser (EC-QCL) has been evaluated for direct absorption spectroscopy measurements of nitric oxide (NO) in the wavenumber range 1872–1958 cm^?1 and with a 13.5 cm long optical cell. In order to reduce the absorption measurement errors due to the large variations of laser intensity, normalisation with a reference channel was used. Wavelength stability within the scans was analysed using the Allan plot technique for the reduced wavenumber range of 1892.4–1914.5 cm^?1. The Allan variances of the NO absorption peak centres and areas were observed to increase with successive scan averaging for all absorption peaks across the wavelength scan, thus revealing short- and long-term drifts of the cw EC-QCL wavelength between successive scans. As an example application, the cw EC-QCL was used for NO measurements in the exhaust of an atmospheric pressure packed-bed plasma reactor applied to the decomposition of dichloromethane in waste gas streams. Etalon noise was reduced by subtracting a reference spectrum recorded when the plasma was off. The NO limit of detection (SNR = 1) was estimated to be ～2 ppm at atmospheric pressure in a 20.5 cm long optical cell with a double pass and a single 7 s scan over 1892.4–1914.5 cm^?1.     

Modeling of electrical and optical characteristics of near room-temperature CdS/ZnSe based NIR photodetectors

Results of modeled photodetector characteristics in (CdS/ZnSe)/BeTe multi-well diode with p–i–n polarity are reported. The dark current density (J–V) characteristics, the temperature dependence of zero-bias resistance area product (R₀A), the dynamic resistance as well as bias dependent dynamic resistance (R_d) and have been analyzed to investigate the mechanisms limiting the electrical performance of the modeled photodetectors. The quantum efficiency, the responsivity and the detectivity have been also studied as function of the operating wavelength. The suitability of the modeled photodetector is demonstrated by its feasibility of achieving good device performance near room temperature operating at 1.55 μm wavelength required for photodetection in optical communication. Quantum efficiency of ∼95%, responsivity ∼0.6 A/W and D^* ∼ 5.7 × 10¹⁰ cm Hz^1/2/W have been achieved at 300 K in X BeTe conduction band minimum.     

Stimulated emission from optically excited CdxHg1−xTe structures at room temperature

Main requirements for the optimization of Cd_xHg_1?xTe (MCT) structures with a view to increasing the wavelength of stimulated emission under optical pumping are discussed. A 2–2.5 μm stimulated emission from optimized MCT structures is observed experimentally at room temperature. The measured values of the gain in the active medium amount to 50 cm^?1 at a 2 μm emission wavelength.     

Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

Photodiodes of InSb were fabricated on an epitaxial layer grown using molecular beam epitaxy (MBE). Thermal cleaning of the InSb (0 0 1) substrate surface, 2° towards the (1 1 1) B plane, was performed to remove the oxide. Photodiode properties of МВЕ-formed epitaxial InSb were demonstrated. Zero-bias resistance area product (R₀A) measurements were taken at 80 K under room temperature background for a pixel size of 100 μm × 100 μm. Values were as high as 4.36 × 10⁴ Ω/cm², and the average value of R₀A was 1.66 × 10⁴ Ω/cm². The peak response was 2.44 (A/W). The epitaxial InSb photodiodes were fabricated using the same process as bulk crystal InSb diodes with the exception of the junction formation method. These values are comparable to the properties of bulk crystal InSb photodiodes.     

A new method of synthesis on high-quality AgGaS2 polycrystalline

High-pure, single-phase, free of voids and high mass density AgGaS₂ polycrystalline was synthesized by a new method, i.e. two-temperature zone vapor-transporting together with the mechanical and melt temperature oscillation method (TVMMTOM), directly from high-purity (6 N) elements silver, gallium and sulfur with excess sulfur. The mechanism and advantages of the new method for synthesizing high-quality AgGaS₂ were discussed. It is found that the polycrystalline material synthesized by the new method is superior to that synthesized by the conventional method, what is more the new method can avoid the explosion of the synthetic quartz ampoule. Adopting the modified Bridgman method an integral and crack-free AgGaS₂ single crystal with diameter of 14 mm and length of 63 mm has been obtained. It was found that there was a (1 0 1) cleavage face and the four order X-ray spectrum of the {1 0 1} faces was observed. By the method of DSC analysis the melting and freezing points of the AgGaS₂ single crystal were about 995 and 955 °C. The transmission spectra of the AgGaS₂ sample of 10 × 8 × 2 mm³ were obtained by means of UV and IR spectrophotometer. The limiting wavelength was 470 nm and the band gap was 2.64 eV. It can be found in the infrared spectrum that the infrared transmission was above 55% from 4000 to 800 cm⁻¹, and the infrared transmittance of the crystal is up to 63% at 10.6 μm, which is higher than that of the crystal grown using polycrystalline materials synthesized by the conventional method. The value of α in 10.6 μm was 0.267 cm⁻¹. Above mentioned results showed that the crystal was of good quality and TVMMTOM is preferable for synthesizing high-quality AgGaS₂ polycrystalline materials.     

Resonant detectors and focal plane arrays for infrared detection

We are developing resonator-QWIPs for narrowband and broadband long wavelength infrared detection. Detector pixels with 25 μm and 30 μm pitches were hybridized to fanout circuits and readout integrated electronics for radiometric measurements. With a low to moderate doping of 0.2–0.5 × 10¹⁸ cm⁻³ and a thin active layer thickness of 0.6–1.3 μm, we achieved a quantum efficiency between 25 and 37% and a conversion efficiency between of 15 and 20%. The temperature at which photocurrent equals dark current is about 65 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 20 mK at 2 ms integration time and 60 K operating temperature. This good performance confirms the advantages of the resonator-QWIP approach.     

InGaAsP/InP photodetectors targeting on 1.06 μm wavelength detection

InP-based InGaAsP photodetectors targeting on 1.06 μm wavelength detection have been grown by gas source molecular beam epitaxy and demonstrated. For the detector with 200 μm mesa diameter, the dark current at 10 mV reverse bias and R₀A are 8.89 pA (2.2 × 10⁻⁸ A/cm²) and 3.9 × 10⁵ Ω cm² at room temperature. The responsivity and detectivity of the InGaAsP detector are 0.30 A/W and 1.45 × 10¹² cm Hz^1/2 W⁻¹ at 1.06 μm wavelength. Comparing to the reference In_0.53Ga_0.47As detector, the dark current of this InGaAsP detector is about 570 times lower and the detectivity is more than ten times higher, which agrees well with the theoretical estimation.     

Compact sensor for methane detection in the mid infrared region based on Quartz Enhanced Photoacoustic Spectroscopy

A compact system for methane sensing based on the Quartz-Enhanced Photoacoustic Spectroscopy technique has been developed. This development has been taken through two versions which were based respectively on a Fabry Perot quantum wells diode laser emitting at 2.3 μm, and on a quantum wells distributed feedback diode laser emitting at 3.26 μm. These lasers emit near room temperature in the continuous wave regime. A spectrophone consisting of a quartz tuning fork and one steel microresonator was used. Second derivative wavelength modulation detection was used to perform low methane concentration measurements. The sensitivity and the linearity of the QEPAS sensor were studied. A normalized noise equivalent absorption coefficient of 7.26 × 10⁻⁶ cm⁻¹ W/Hz^1/2 was achieved. This corresponds to a detection limit of 15 ppmv for 12 s acquisition time.     

Wavelength conversion based on high nonlinear microstructured fiber

A wavelength conversion based on high nonlinear microstructured fiber is demonstrated. Core diameter and pitch of the microstructured fiber used in this wavelength conversion method are 2.05 μm and 5.0 μm, respectively. Diameter of the air-holes in the fiber cladding is 4.50 μm, the nonlinear coefficient of the microstructured fiber is 112.2 W^?1 km^?1 and it is 60 times higher than that of a conventional dispersion-shift fiber, the length of the fiber is 100 m. Four-wave-mixing effect is improved in the high nonlinear microstructure fiber and then the efficiency of the wavelength conversion is improved also. 10 Gbps Not-Return-to-Zero (NRZ) modulation format and 10 Gbps Return-to-Zero (RZ) modulation format are converted effectively by our method. This study can provide a new alternative solution for high effective all-light wavelength conversion in high speed optical communication systems with multi-wavelengths and all-light optical networks.     

QWIP focal plane arrays on InP substrates for single and dual band thermal imagers

Alternative material systems on InP substrate provide certain advantages for mid-wavelength infrared (MWIR), long-wavelength infrared (LWIR) and dual band MWIR/LWIR quantum well infrared photodetector (QWIP) focal plane arrays (FPAs). While InP/InGaAs and InP/InGaAsP LWIR QWIPs provide much higher responsivity when compared to the AlGaAs/GaAs QWIPs, AlInAs/InGaAs system facilitates completely lattice matched single band MWIR and dual band MWIR/LWIR FPAs.We present an extensive review of the studies on InP based single and dual band QWIPs. While reviewing the characteristics of InP/InGaAs and InP/InGaAsP LWIR QWIPs at large format FPA level, we experimentally demonstrate that the cut-off wavelength of AlInAs/InGaAs QWIPs can be tuned in a sufficiently large range in the MWIR atmospheric window by only changing the quantum well (QW) width at the lattice matched composition. The cut-off wavelength can be shifted up to ～5.0 μm with a QW width of 22 Å in which case very broad spectral response (Δλ/λ_p = ～30%) and a reasonably high peak detectivity are achievable leading to a noise equivalent temperature difference as low as 14 mK (f/2) with 25 μm pitch in a 640 × 512 FPA. We also present the characteristics of InP based two-stack QWIPs with wavelengths properly tuned in the MWIR and LWIR bands for dual color detection. The results clearly demonstrate that InP based material systems display high potential for dual band MWIR/LWIR QWIP FPAs needed by third generation thermal imagers.     

Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays

In this paper, we present an InAs/GaSb type-II superlattice (SL) with the M-structure for the fabrication of a long-wavelength (10 μm range) infrared (LWIR) focal plane arrays (FPA), which are grown by molecular beam epitaxy (MBE). The M-structure is named for the shape of the band alignment while the AlSb layer is inserted into the GaSb layer of InAs/GaSb SL. A 320 × 256 LWIR FPA has been fabricated with low surface leakage and high R₀A product of FPA pixels by using anodic sulfide and SiO₂ physical passivation. Experiment results show that the devices passivated with anodic sulfide obviously have higher R₀A than the un-sulphurized one. The 50% cutoff wavelength of the LWIR FPA is 9.1 μm, and the R₀A is 224 Ω cm² with the average detectivity of 2.3 × 10¹⁰ cm Hz^1/2 W⁻¹.     

Analytical modeling and ATLAS simulation of N+-InP/n0-In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication

In this paper we report an analytical modeling of N⁺-InP/n⁰-In_0.53Ga_0.47As/p⁺-In_0.53Ga_0.47As p-i-n photodetector for optical fiber communication. The results obtained on the basis of our model have been compared and contrasted with the simulated results using ATLAS? and experimental results reported by others. The photodetector has been studied in respect of energy band diagram, electric field profile, doping profile, dark current, resistance area-product, quantum efficiency, spectral response, responsivity and detectivity by analytical method using closed form equations and also been simulated by using device simulation software ATLAS? from SILVACO® international. The photodetector exhibits a high quantum efficiency ～90%, responsivity ～1.152–1.2 A/W in the same order as reported experimentally by others, specific detectivity ～5 × 10⁹ cm Hz^1/2 W^?1at wavelength 1.55–1.65 μm, dark current of the order of 10^?11 A at reverse bias of 1.5 V and 10^?13–10^?12 A near zero bias. These values are comparable to those obtained for practical p-i-n detectors. The estimated noise equivalent power (NEP) is of the order of 2.5 × 10^?14 W.     

Manufacturability of type-II InAs/GaSb superlattice detectors for infrared imaging

Type-II InAs/GaSb superlattice detectors and focal plane arrays (FPAs) with cut-off wavelength at 5.1 μm have been studied. For single pixel devices, dark current densities of 1 × 10⁻⁶ A/cm² and quantum efficiencies of 53% were measured at 120 K. From statistics of manufactured FPAs, an average FPA operability of 99.87% was observed. Furthermore, average temporal and spatial noise equivalent temperature difference (NETD) values of 12 mK and 4 mK, respectively, were deduced. Excellent stability of FPAs after non-uniformity correction was observed with no deterioration of the ratio between spatial and temporal noise during a two hour long measurement. Also after several cooldowns the ratio between spatial and temporal NETD stayed below 0.6.     

Structural and vibrational properties of PVT grown Bi2Te3 microcrystals

High-quality Bi₂Te₃ microcrystals have been grown by physical vapor transport (PVT) method without using a foreign transport agent. The microcrystals grown under optimal temperature gradient are well facetted and they have dimensions up to ～100 μm. The phase composition of grown crystals has been identified by X-ray single crystal structure analysis in space group R3?m, a=4.3896(2) Å, b=30.5019(10) Å, Z=3 (R=0.0271). Raman microspectrometry has been used to describe the vibration parameters of Bi₂Te₃ microcrystals. The FWHM parameters obtained for representative Raman lines at 61 cm^?1 and 101 cm^?1 are as low as 3.5 cm^?1 and 4.5 cm^?1, respectively.     

High detectivity dilute nitride strained layer superlattice detectors for LWIR and VLWIR applications

This paper will describe the first-of-a-kind development and demonstration of dilute nitride strained layer superlattice detectors with detectivity as high as 4 × 10¹⁰ cm Hz^1/2/W and cut-off wavelength of 11-μm for an LWIR design and a cut-off wavelength of 22-μm for a VLWIR design. The developed dilute nitride SLS detectors are based on ultra-low leakage dilute nitride epitaxial layers and/or strained layer superlattices (SLS) of InAs/InAsSbN and InAs/GaInSbN that could enable high VLWIR detectivities at elevated temperatures and at low cost.     

Gain properties of the transition emissions near the second telecommunication window in Ho3+-doped multicomponent heavy-metal gallate glasses

Efficient infrared emissions near the second telecommunication window in Ho³⁺-doped multicomponent heavy-metal gallate (MHG) glasses have been observed. The maximum stimulated emission cross-sections are calculated to be 2.94×10^?21 and 2.08×10^?21 cm² for 1200 and 1390 nm emissions, respectively. Excitation spectra reveal that the 642 and 538 nm wavelengths are practical pumping conditions for 1.2 and 1.39 μm emissions, respectively. Gain cross-sections are evaluated and positive gain bands have been anticipated. The theoretical gain results indicate that the appealing infrared emissions near the second telecommunication window from Ho³⁺-doped MHG glasses with low maximum phonon energy of ～660 cm^?1 make them attractive in developing ～1.2 μm and E-band (1360–1460 nm) optical amplifiers.