Widely tunable compact erbium-doped fiber ring laser for fiber-optic sensing applications

A compact erbium-doped ring-shaped fiber laser suitable for fiber-optic sensing applications has been developed. The fiber laser utilized a tunable fiber Fabry–Perot filter as the tuning element and had a moderate milli-Watt level power output over almost the whole tuning range from 1530 to 1595 nm with a power fluctuation of 0.15 dB. High repetition rate scanning of laser operation over the whole tuning range was achieved at rates of up to 200 Hz. Moreover, the performance of the ring-shaped fiber laser configured with a high-concentration erbium-doped fiber was investigated for its larger wavelength tunability of over 100 nm. Output power characteristics of this ring-shaped fiber laser were also investigated when it worked in a scanning mode. A distorted power wavelength dependence, as well as some pulsing phenomenon were observed in scanning mode.     

Fiber sensor based on Lophine sensitive layer for nitrate detection in drinking water

A new characterization of Lophine as a sensitive layer to measure Nitrate in drinking water is presented in this paper. The characterization was performed with a standard slide and a standard multimode fiber coated with a Lophine sensitive layer (2,4,5-Triphenylimidazol (C₂₁H₁₆N₂)). Spectral characterization has been conducted in the wavelength range from 300 to 1100 nm. We have demonstrated that Lophine can be used as a fiber sensor for the detection of Nitrate in drinking water. The sensing properties of the fiber sensor were analyzed at room temperature. Successful results were achieved when sensing Nitrate in the range between 1 mg/l and 70 mg/l. The response time was 20 ms and the recovery time was 40 ms.     

Tunable dual-wavelength erbium-doped fiber ring laser covering both C-band and L-band for high-speed communications

A simple, continuously tunable dual-wavelength erbium-doped fiber ring laser (TDEDFL) structure for applications in high-speed communication systems is proposed and experimentally demonstrated. The dual-wavelength tuning range is 58 nm covering both the C-band and L-band from 1547 to 1605 nm. We can not only obtain a 45% improvement over previously reported tuning ranges, but also tune the wavelength of each lasing output independently. The power equalization of the dual-wavelength outputs is less than 1.5 dB. We obtain extremely stable power variation and wavelength fluctuation at room temperature. Using this fiber laser, a 10-Gb/s data transmission over a 25-km single-mode fiber (SMF) can be made available with a power penalty of 0.5 dB is demonstrated with this laser.     

Compact resonantly intra-cavity pumped tunable Ho:Sc2SiO5 laser

A compact intra-cavity pumped low threshold continuous-wave Ho:Sc₂SiO₅ laser is reported. The characteristics of output wavelength tuning are investigated by use a intra-cavity briefringent (BF) filter. A wavelength tunable range of 140 nm from 2020 to 2160 nm is achieved. For the free-running mode, the laser slope efficiency is 24.8%, when the output central wavelength is 2110 nm. The laser threshold is about 820 mW of incident pump power. With the BF filter, a maximum output power of 870 mW is obtained at the incident pump power of 5 W, corresponding to a slope efficiency of 20.3%. The characteristics of output wavelength verse the crystal temperature are also investigated.     

An organic electroluminescent device made from a gadolinium complex

A gadolinium ternary complex, tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone) (phenanthroline) gadolinium [Gd(PMIP)₃(Phen)] was synthesized and used as a light emitting material in the organic electroluminescent (EL) devices. The triple layer device with a structure of indium tin oxide (ITO)/N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD) (20 nm)/Gd(PMIP)₃(Phen) (80 nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (bathocuproine or BCP) (20 nm)/Mg: Ag(200 nm)/Ag(100 nm) exhibited green emission peaking at 535 nm. A maximum luminance of 230 cd/m² at 17 V and a peak power efficiency of 0.02 lm/w at 9 V were obtained.     

A study on wavelength dependence and dynamic range of the quadratic response of commercial grade light emitting diodes

Experimental results of a study on the wavelength dependence and the dynamic range of the quadratic response of commercial grade light emitting diodes (LEDs) are reported over a broad spectral range of 680 nm to 1080 nm using ~ 100 fs duration laser pulses from cw mode locked laser oscillator. A large dynamic range of the quadratic response has been demonstrated in a reverse biased LED. The observed dynamic range compares well with that obtained using a biased photomultiplier tube with large internal gain.     

CMOS—compatible reconfigurable microring demultiplexer with doped silicon slab heater

We present a 1×4 reconfigurable demultiplexer based on cascaded silicon microring resonators. The device is fabricated on a 0.18 μm complementary metal oxide semiconductor (CMOS) process. A homogeneous doped silicon slab heater is proposed and fabricated directly on the slab region of the microring resonator for thermal tuning. The flows of the heating currents in the heaters are parallel to the ring waveguide through the heavily doped slab regions located on both sides of the ring waveguide without through the waveguide core regions. The proposed doped heaters are experimentally verified with low-voltage operation and tuning efficiency of ～77 pm/mW. Without any tuning or trimming, predicted average channel spacing distribution in the whole free spectral range (FSR) is demonstrated. Full reconfigurability is also demonstrated in the demultiplexer with channel spacing of 2 nm (250 GHz) and 1 nm (125 GHz), corresponding to channel isolation of less than ?21 dB and ?16 dB, respectively. Such a low-voltage operation and reconfigurable demultiplexer is suitable for on-chip optical interconnect.     

Tunable multi-wavelength fiber laser based on a polarization-maintaining erbium-doped fiber and a polarization controller

A stable and tunable multi-wavelength fiber laser with a polarization-maintaining erbium-doped fiber (PM-EDF) and a polarization controller (PC) is proposed and demonstrated. A homemade PM-EDF incorporated in the ring cavity is used as the gain medium. Simultaneous multi-wavelength oscillation is achieved at room temperature. The theory of the PM-EDF and PC to suppress the wavelength competition is described in detail. The 3 dB bandwidth is less than 0.01 nm. The power fluctuation and wavelength shift are measured to be less than 0.5 dB and 0.05 nm over 32 min. The wavelength tuning between single-, double-, triple-, and four-wavelength is realized.     

Regenerated fibre Bragg grating fabricated on high germanium concentration photosensitive fibre for sensing at high temperature

A Regenerated Fibre Bragg Grating (RFBG), with repeatable high temperature response between 400 °C–1200 °C, has been demonstrated using a hydrogen-loaded, highly germanium-doped, photosensitive fibre. A wavelength shifts of as much as 20 nm is attained during temperature calibration up to 1300 °C. A large temperature response of 17 pm/°C is obtained from the RFBG, with very good repeatability.     

Self-induced polarization rotation of laser beam in fullerene (C70) solutions

Nonlinear self-rotation of elliptically polarized laser pulses (λ = 532 nm, τ_FWHM ~ 12 ns) in toluene, benzene and binary mixture (toluene + ethanol) solutions of fullerene C₇₀ has been investigated experimentally. Absolute values and signs of the nonlinear refractive indices (n₂) and nonlinear optical susceptibilities χ⁽³⁾(ω, ? ω, ω) of C₇₀ solutions in toluene and benzene at different values of polarization ellipse (θ = 0.2 ÷ 0.8) have been determined. High-resolution transmission electron microscope studies of C₇₀ solutions showed that in toluene + ethanol mixtures ball-shaped C₇₀ clusters are formed with particle sizes in the range ~ 100 ÷ 500 nm. It has been demonstrated, that the clusters sizes depend on the C₇₀ concentration and volume fraction of ethanol in toluene. Correlation between the processes of C₇₀ clusters formation in solutions and the values of polarization self-rotation angle of transmitted laser beam has been demonstrated. Physical mechanisms of laser induced optical activity in fullerene solutions have been discussed.     

Simulation of dark current suppression in p–i–n InGaAs photodetector with In0.66Ga0.34As/InAs superlattice electron barrier

An InGaAs–based photodetector with different periods of inserting strain–compensated In_0.66Ga_0.34As/InAs superlattice (SL) electron barrier in the In_0.83Ga_0.17As absorption layer has been investigated. The band diagram, electron concentration and electric field intensity of the structure were analyzed with numerical simulation. It was found that the period of SL has a remarkable influence on the properties of the photodetectors. With the decrease of the period of In_0.66Ga_0.34As/InAs SL, the dark current density is suppressed significantly, which is reduced to 2.46 × 10⁻³ A/cm² at 300 K and a reverse bias voltage of 1 V when the period is 2.5 nm.     

Hard magnetic properties of rapidly annealed NdFeB thin films on Nb and V buffer layers

NdFeB thin films of the form A (20 nm)/NdFeB(d nm)/A(20 nm), where d ranges from 54 to 540 nm and the buffer layer A is Nb or V were prepared on a Si(1 0 0) substrate by magnetron sputtering. The hard Nd₂Fe₁₄B phase is formed by a 30 s rapid anneal or a 20 min anneal. Average crystallite size ranged from 20 to 35 nm with the rapidly annealed samples having the smaller crystallite size. These samples also exhibited a larger coercivity and energy product than those treated by a 20 min vacuum anneal. A maximum coercivity of 26.3 kOe at room temperature was obtained for a Nb/NdFeB (180 nm)/Nb film after a rapid anneal at 725°C. Initial magnetization curves indicate magnetization rotation rather than nucleation of reverse domains is important in the magnetization process. A Brown's equation analysis of the coercivity as a function of temperature allowed us to compare the rapidly annealed and 20 min annealed samples. This analysis suggests that rapid annealing gives higher quality crystalline grains than the 20 min annealed sample leading to the observed large coercivity in the rapidly annealed samples.     

Utilization of surface plasmon resonance of Au/Pt nanoparticles for highly photosensitive ZnO nanorods network based plasmon field effect transistor

Hydrothermally processed highly photosensitive ZnO nanorods based plasmon field effect transistors (PFETs) have been demonstrated utilizing the surface plasmon resonance coupling of Au and Pt nanoparticles at Au/Pt and ZnO interface. A significantly enhanced photocurrent was observed due to the plasmonic effect of the metal nanoparticles (NPs). The Pt coated PFETs showed I_on/I_off ratio more than 3 × 10⁴ under the dark condition, with field-effect mobility of 26 cm² V⁻¹ s⁻¹ and threshold voltage of −2.7 V. Moreover, under the illumination of UV light (λ = 350 nm) the PFET revealed photocurrent gain of 10⁵ under off-state (−5 V) of operation. Additionally, the electrical performance of PFETs was investigated in detail on the basis of charge transfer at metal/ZnO interface. The ZnO nanorods growth temperature was preserved at 110 °C which allowed a low temperature, economical and simple method to develop highly photosensitive ZnO nanorods network based PFETs for large scale production.     

All fiber passively mode locked zirconium-based erbium-doped fiber laser

All passively mode locked erbium-doped fiber laser with a zirconium host is demonstrated. The fiber laser utilizes the Non-Linear Polarization Rotation (NPR) technique with an inexpensive fiber-based Polarization Beam Splitter (PBS) as the mode-locking element. A 2 m crystalline Zirconia–Yttria–Alumino-silicate fiber doped with erbium ions (Zr–Y–Al-EDF) acts as the gain medium and generates an Amplified Spontaneous Emission (ASE) spectrum from 1500 nm to 1650 nm. The generated mode-locked pulses have a spectrum ranging from 1548 nm to more than 1605 nm, as well as a 3-dB bandwidth of 12 nm. The mode-locked pulse train has an average output power level of 17 mW with a calculated peak power of 1.24 kW and energy per pulse of approximately 730 pJ. The spectrum also exhibits a Signal-to-Noise Ratio (SNR) of 50 dB as well as a repetition rate of 23.2 MHz. The system is very stable and shows little power fluctuation, in addition to being repeatable.     

Tunable single-longitudinal-mode operation of a sandwich-type YAG/Ho:YAG/YAG ceramic laser

We present a 2.09 μm single-longitudinal-mode sandwich-type YAG/Ho:YAG/YAG ceramic laser pumped by a Tm-doped fiber laser for the first time. A pair of F-P etalons was used to achieve tunable single-longitudinal-mode operation. The maximum single-longitudinal-mode output power of 530 mW at 2091.4 nm was obtained with an absorbed pump power of 8.06 W, corresponding to an optical conversion efficiency of 6.6% and a slope efficiency of 12.7%. Wavelength tunable was achieved by tuning the angle of etalons and the wavelength could be tuned from 2091.1 nm to 2092.1 nm, corresponding to a tuning frequency of 68 GHz. The M² factor was measured to be 1.23.     

Luminescence of Eu2+–vc− dipoles and their associates in CsI:Eu crystals

Spectral-kinetics properties of photo-scintillation excited with single light pulses of a nitrogen laser (λ=337.1 nm, t_1/2=5 ns, Q=1 mJ) have been studied in CsI:Eu crystals at temperature within 80–300 K. It is found that the exponential decay of 463 nm emission band has a time constant which grows from 0.85 μs at 78 K to 1.6 μs at 380 K. Such an anomalous temperature behavior of 463 nm emission decay kinetics is discussed in terms of the crystal thermal expansion. It has been proposed that 463 nm emission is caused by a cluster center consisting of three dipoles Eu²⁺v_c^? bounded with each other in a hexagon. Owing to the exchange resonance in the cluster, the energy passes from an excited dipole to a non-excited one and the distance between them gets longer due to thermal expansion of the crystal.     

Wavelength blending with reduced speckle and improved color for laser projection

In this paper, a theoretical model was established to study speckle reduction using the wavelength blending technique with multiple lasers for the first time. An optimized power ratio of two lasers was then obtained using the theoretical model. A diode pumped solid state (DPSS) laser at 532 nm and a semiconductor laser diode (LD) at 520 nm were used to verify the simulated results. A speckle reduction system which utilizes wavelength blending was also proposed and demonstrated. Using wavelength blending, this system has a lower speckle as compared with one in which only one wavelength is used, and an improved green primary color (with respect to the Rec. 2020 standard) as compared with the one that only semiconductor LD is employed.     

Near-white emitting QD-LED based on hydrophilic CdS nanocrystals

In this work we report fabrication of a nanocrystal (NC)-based hybrid organic–inorganic LED with structure of ITO/PEDOT:PSS/PVK/CdS-NCs/(Al or Mg:Ag). The hydrophilic CdS NCs were synthesized using a novel aqueous thermochemical method at 80 °C and sizes (around 2 nm) were controlled by thioglycolic acid (TGA) as the capping agent. The favorite feature of these NCs is their relatively high emission intensity and broad, near-white emission. The hydrophilic CdS NCs were successfully spin coated using Triton X-100 as the wetting agent. The fabricated LEDs demonstrated a turn on voltage about 7 V for Al metallic contact. The electroluminescence was a broad spectrum at 540 and 170 nm width, which was about 50 nm red shifted compared to photoluminescence spectra. The CIE color coordinates of the LED at (0.33, 0.43) demonstrated a near white light LED with an emission on green–yellow boundary of white. Annealing of the device up to 190 °C had a positive effect on the performance, possibly due to better contacts between layers. Replacing Al contacts with Mg:Ag reduced the turn-on voltage to 6 V and changed CIE color coordinate to (0.32, 0.41). The EL peak was also shifted to 525 nm, with a brightness of 15 Cd/m² at working voltage of 15 V. The current efficiency and external quantum efficiency of device were 0.08 Cd/A and 0.03% at current densities higher than 10 mA/cm².     

Transparent CdO/n-GaN(0001) heterojunction for optoelectronic applications

Undoped CdO films were prepared by sol–gel method. Transparent heterojunction diodes were fabricated by depositing n-type CdO films on the n-type GaN (0001) substrate. Current–voltage (I–V) measurements of the device were evaluated, and the results indicated a non-ideal rectifying characteristic with I_F/I_R value as high as 1.17×10³ at 2 V, low leakage current of 4.88×10⁻⁶ A and a turn-on voltage of about 0.7 V. From the optical data, the optical band gaps for the CdO film and GaN were calculated to be 2.30 eV and 3.309 eV, respectively. It is evaluated that interband transition in the film is provided by the direct allowed transition. The n-GaN (0001)/CdO heterojunction device has an optical transmission of 50–70% from 500 nm to 800 nm wavelength range.     

Photoluminescence characterization of beryllium-implanted 6H–silicon carbide

Beryllium has been implanted into both n- and p-type 6H–SiC with post-implantation annealing at 1600 °C. Photoluminescence (PL) measurements have been performed, and PL lines at 420.5, 431 nm, and a broad band at around 505 nm have been observed. The line at 420.5 nm is attributed to an intrinsic defect D_II-center induced by beryllium implantation. The effects of excitation intensity and temperature during the PL experiments are investigated. Based on the excitation laser dependence PL result, the new doublet lines at around 431 nm are thought to be associated with beryllium related bound excitons. The broad band corresponding to the green luminescence at room temperature has been attributed to the recombination of free carriers to beryllium bound levels.