XANES and XPS investigations of the local structure and final-state effects in amorphous metal silicates: (ZrO2)(x)(TiO2)(y)(SiO2)(1-x-y)

Amorphous quaternary [(ZrO(2))(x)(TiO(2))(y)(SiO(2))(1-x-y)] and ternary [(ZrO(2))(x)(SiO(2))(1-x)] silicates were synthesized using a sol-gel method and examined via XPS and XANES. Metal silicates are important industrial materials, though structural characterization is complicated because of their amorphous nature. Hard (Ti K- and Zr K-edge) and soft (Ti L(2,3)-edge) X-ray XANES spectra suggest the Ti and Zr coordination numbers in the quaternary silicates remain constant as the metal identity or total metal content (x, y, or x + y in the chemical formula) is varied. XPS core-line spectra from the quaternary silicates show large decreases in Ti 2p(3/2), Zr 3d(5/2), Si 2p(3/2), and O 1s binding energies due to increasing final-state relaxation with greater next-nearest neighbour substitution of Si for less-electronegative Ti/Zr, which was confirmed by analysis of the O Auger parameter. These decreases in binding energy occur without any changes in the ground-state energies (e.g., oxidation state) of these atoms, as examined by Ti L(2,3)-edge, Si L(2,3)-edge, and O K-edge XANES. Because most spectroscopic investigations are concerned with ground-state properties, knowledge of the contributions from final-state effects is important to understand the spectra from materials of interest.     

C(膜)/Si(SiO2 )(纳米微粒)/C(膜)热处理的形态及结构分析

用直流辉光溅射+真空镀膜法制备了一种新型结构的硅基纳米发光材料- C(膜)/Si(SiO2)(纳米微粒)/C(膜)夹层膜,并对其进行了退火处理.用TEM、 SEM、 XRD和XPS对其进行了形态结构分析.TEM观察表明: Si(SiO2)纳米微粒基本呈球形,粒径在30 nm左右.SEM观察表明: 夹层膜样品总厚度约为50 μm,膜表面比较平整、致密.400℃退火后,样品表面变得凹凸不平,出现孔状结构; 650℃退火后,样品表面最平整、致密且颗粒均匀.XRD分析表明:制备出的夹层膜主要由SiO2和Si组成,在C原子的还原作用和氧气的氧化作用的共同作用下, SiO2和Si的含量随加热温度的升高而呈现交替变化: 400℃时, C的还原作用占主导地位, SiO2几乎全部被还原成了Si,此时Si含量最高; 400～650℃时,氧化作用占主导地位, Si又被氧化成SiO2, Si含量降低, SiO2含量逐渐上升,在650℃达到最高.XPS分析表明: 在加热过程中, C原子逐渐扩散进入Si(SiO2)微粒层,在650℃与Si反应生成了新的SiC.     

利用XPS 氩离子刻蚀表征锂离子电池Si/C负极材料中含硅的活性物质

以石墨、沥青和纳米硅粉为原料制备了锂离子电池Si/C负极材料,使用SEM/ BSE 、Raman、XRD、XPS及XPS氩离子刻蚀等方法对其硅活性物质进行了具体分析。结果表明,XRD和Raman仅判断出负极材料中含有活性物质单质Si;常规XPS结果发现近一半的Si已被氧化为惰性物质SiO2;而使用XPS氩离子刻蚀方法发现负极材料中Si存在5种化学态,包括活性物质单质Si、Si2O、SiO、Si2O3,及惰性物质SiO2;定量结果表明,复合材料的硅活性物质高于96.56%,且主要结构是低价态硅氧化物,而非单质Si。XPS氩离子刻蚀的分析方法为锂离子电池负极材料中硅活性物质的研究提供了新思路。     

Effect of oxygen content on the 29Si NMR, Raman spectra and oxide ion conductivity of the apatite series, La8+xSr2-x(SiO4)6O2+x/2

29Si NMR data have been recorded for the apatite series La8+xSr2-x(SiO4)6O2+x/2 (0 < or = x < or = 1.0). For x = 0, a single NMR peak is observed at a chemical shift of approximately -77 ppm, while as the La : Sr ratio and hence interstitial oxygen content is increased, a second peak at a chemical shift of approximately -80 ppm is observed, which has been attributed to silicate groups neighbouring interstitial oxide ions. An increase in the intensity of this second peak is observed with increasing x, consistent with an increase in interstitial oxide ion content, and the data are used to estimate the level of interstitial oxide ions, and hence Frenkel-type disorder in these materials. The increase in second 29Si NMR peak intensity/interstitial oxide ion content is also shown to correlate with an increase in conductivity. The effect of interstitial oxygen content can also be studied by means of Raman spectroscopy, with a new mode at 360 cm(-1) appearing for samples with x > 0 in the symmetric bending mode energy region of the SiO4 group. The intensity of this mode increases with increasing oxygen content, yielding results comparable to those from the NMR studies, showing the complementarities of the two techniques.     

Structural characterization and oxidative dehydrogenation activity of V2O5/Ce(x)Zr(1-x)O2/SiO2 catalysts

The thermal stability of a nanosized Ce(x)Zr(1-x)O2 solid solution on a silica surface and the dispersion behavior of V2O5 over Ce(x)Zr(1-x)O2/SiO2 have been investigated using XRD, Raman spectroscopy, XPS, HREM, and BET surface area techniques. Oxidative dehydrogenation of ethylbenzene to styrene was performed as a test reaction to assess the usefulness of the VOx/Ce(x)Zr(1-x)O2/SiO2 catalyst. Ce(x)Zr(1-x)O2/SiO2 (1:1:2 mol ratio based on oxides) was synthesized through a soft-chemical route from ultrahigh dilute solutions by adopting a deposition coprecipitation technique. A theoretical monolayer equivalent to 10 wt % V2O5 was impregnated over the calcined Ce(x)Zr(1-x)O2/SiO2 sample (773 K) by an aqueous wet impregnation technique. The prepared V2O5/Ce(x)Zr(1-x)O2/SiO2 sample was subjected to thermal treatments from 773 to 1073 K. The XRD measurements indicate the presence of cubic Ce0.75Zr0.25O2 in the case of Ce(x)Zr(1-x)O2/SiO2, while cubic Ce0.5Zr0.5O2 and tetragonal Ce0.16Zr0.84O2 in the case of V2O5/Ce(x)Zr(1-x)O2/SiO2 when calcined at various temperatures. Dispersed vanadium oxide induces more incorporation of zirconium into the ceria lattice, thereby decreasing its lattice size and also accelerating the crystallization of Ce-Zr-O solid solutions at higher calcination temperatures. Further, it interacts selectively with the ceria portion of the composite oxide to form CeVO4. The RS measurements provide good evidence about the dispersed form of vanadium oxide and the CeVO4 compound. The HREM studies show the presence of small Ce-Zr-oxide particles of approximately 5 nm size over the surface of amorphous silica and corroborate with the results obtained from other techniques. The catalytic activity studies reveal the ability of vanadium oxide supported on Ce(x)Zr(1-x)O2/SiO2 to efficiently catalyze the ODH of ethylbenzene at normal atmospheric pressure. The remarkable ability of Ce(x)Zr(1-x)O2 to prevent the deactivation of supported vanadium oxide leading to stable activity in the time-on-stream experiments and high selectivity to styrene are other important observations.     

镧助剂对铜硅催化剂结构及其甘油氢解性能影响研究

在沉淀凝胶法制备的Cu/SiO2催化剂中采用浸渍法添加La助剂,制备了一系列不同La含量的Cu-La2O3/SiO2催化剂,利用BET、XRD、TPR、XPS和TEM对催化剂进行了系统表征,并在高压反应釜中对其进行了甘油氢解制备1,2-丙二醇活性评价,研究了La含量对催化剂高温热稳定性及甘油氢解活性的影响.结果表明:适量La的引入能明显抑制催化剂的高温烧结,维持催化剂的大比表面及活性组分的高分散,提高催化剂的结构稳定性;同时对减少反应过程中活性组分的流失也有很好的效果.铜镧之间存在着协同作用,经高温焙烧后得到加强,对Cu/SiO2催化剂的甘油氢解活性有很好的促进作用.     

Surface stabilized nanosized Ce(x)Zr(1-x)O(2) solid solutions over SiO(2): characterization by XRD, Raman, and HREM techniques

Ce(x)Zr(1)(-)(x)O(2) solid solutions deposited over silica surface were investigated by X-ray diffraction (XRD), Raman spectroscopy (RS), and high-resolution transmission electron microscopy (HREM) techniques in order to understand the role of silica support and the temperature stability of these composite oxides. For the purpose of comparison, an unsupported Ce(x)Zr(1)(-)(x)O(2) was also synthesized and subjected to characterization by various techniques. The Ce(x)Zr(1)(-)(x)O(2)/SiO(2) (CZ/S) (1:1:2 mole ratio based on oxides) was synthesized by depositing Ce(x)Zr(1)(-)(x)O(2) solid solution over a colloidal SiO(2) support by a deposition precipitation method and unsupported Ce(x)Zr(1)(-)(x)O(2) (CZ) (1:1 mole ratio based on oxides) was prepared by a coprecipitation procedure, and the obtained catalysts were subjected to thermal treatments from 773 to 1073 K. The XRD measurements disclose the presence of cubic phases with the composition Ce(0.75)Zr(0.25)O(2) and Ce(0.6)Zr(0.4)O(2) in CZ samples, while CZ/S samples possess Ce(0.75)Zr(0.25)O(2), Ce(0.6)Zr(0.4)O(2), and Ce(0.5)Zr(0.5)O(2) in different proportions. The crystallinity of these phases increased with increasing calcination temperature. The cell a parameter estimations indicate contraction of ceria lattice due to the incorporation of zirconium cations into the CeO(2) unit cell. Raman measurements indicate the presence of oxygen vacancies, lattice defects, and displacement of oxygen ions from their normal lattice positions in both the series of samples. The HREM results reveal, in the case of CZ/S samples, a well-dispersed nanosized Ce-Zr-oxides over the surface of amorphous SiO(2). The structural features of these crystals as determined by digital diffraction analysis of experimental images reveal that the Ce-Zr-oxides are mainly in the cubic geometry and exhibit high thermal stability. Oxygen storage capacity measurements by a thermogravimetric method reveal a substantial enhancement in the oxygen vacancy concentration of CZ/S sample over the unsupported CZ sample.     

SrS/α-SiO~2界面的XPS研究

TFEL器件中绝缘层与发光层之间的界面对电荷的输运特性、发光特性等有着十分重要的作用。本文通过XPS的测量,分析了新结构器件中SrS/α-SiO~2界面的各成分的芯电子能谱的变化和深度分布,发现Sr^2^+向SiO~2中扩散较深并以氧化物的形态存在,介质层以SiO~x(x=1.65～1.70)的形态存在。这些丰富的界面态有可能成为TFEL器件的初电子源而对SrS:Ce发光有贡献。     

Direct and indirect causes of Fermi level pinning at the SiO/GaAs interface

The correlation between atomic bonding sites and the electronic structure of SiO on GaAs(001)-c(2x8)/(2x4) was investigated using scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and density functional theory (DFT). At low coverage, STM images reveal that SiO molecules bond Si end down; this is consistent with Si being undercoordinated and O being fully coordinated in molecular SiO. At approximately 5% ML (monolayer) coverage, multiple bonding geometries were observed. To confirm the site assignments from STM images, DFT calculations were used to estimate the total adsorption energies of the different bonding geometries as a function of SiO coverage. STS measurements indicated that SiO pins the Fermi level midgap at approximately 5% ML coverage. DFT calculations reveal that the direct causes of Fermi level pinning at the SiO GaAs(001)-(2x4) interface are a result of either local charge buildups or the generation of partially filled dangling bonds on Si atoms.     

Synthesis, composition, and structure of sillenite-type solid solutions in the Bi2O3-SiO2-MnO2 system

Individual compounds and solid solutions are obtained under hydrothermal conditions in the Bi(2)O(3)-SiO(2)-MnO(2) system in the form of faceted crystals and epitaxial films on the Bi(24)Si(2)O(40) substrate. The crystals have the shape of a cube (for the molar ratio of the starting components Na(2)SiO(3)·9H(2)O:Mn(NO(3))(2)·6H(2)O > 1), a tetrahedron (for Na(2)SiO(3)·9H(2)O:Mn(NO(3))(2)·6H(2)O < 1), or a tetrahedron-cube combination (for Na(2)SiO(3)·9H(2)O:Mn(NO(3))(2)·6H(2)O = 1). Crystal-chemical analysis based on the data of single-crystal and powder X-ray diffraction, IR spectra, and the results of calculation of the local balance by the bond-valence method reveals formation of the Bi(24)(Si(4+),Mn(4+))(2)O(40) phases, which probably include Mn(5+) ions (epitaxial films), as well as the Bi(24)(Si(4+),Bi(3+),Mn(4+))(2)O(40) and Bi(24)(Si(4+),Mn(4+))(2)O(40) phases in the (1 - x)Bi(3+)(24)Si(4+)(2)O(40) - x(Bi(3+)(24)Mn(4+)(2)O(40)) system and the Bi(24)(Bi(3+),Mn(4+))(2)O(40) phase in the (1 - x)Bi(3+)(24)Bi(3+)(2)(O(39)?(1)) - x(Bi(3+)(24)Mn(4+)(2)O(40)) system. Precision X-ray diffraction studies of single crystals of the Bi(24)(Bi,Si,Mn)(2)O(40) general composition show that these sillenites crystallize in space group P23 and not I23 as the Bi(24)Si(2)O(40) phase. The dissymmetrization of sillenite phases is observed for the first time. It is explained by a kinetic (growth) phase transition of the order-disorder type due to population of a crystallographic site by atoms with different crystal-chemical properties and quasi-equilibrium conditions of crystal growth in the course of a hydrothermal synthesis below 400 °C at unequal molar amounts of the starting components in the batch.     

Density Functional Theory Study on the Structural and Electronic Properties of Ge（SiO_2）_n Clusters

The geometry,stability,binding energy and electronic properties of(SiO2)n and Ge(SiO2)n clusters(n = 7) have been investigated by Density functional theory(DFT).The results show that the lowest energy structures of Ge(SiO2)n are obtained by adding one Ge on the end site of the O atom or the Si near end site of the O atom in(SiO2)n.The chemical activation of Ge-(SiO2)n is improved compared with(SiO2)n.The calculated second-order difference of energies and fragmentation energies show that the Ge(SiO2)n clusters with n = 2 or 5 are stable.     

溶胶-凝胶法制备(Ca1-xMgx)SiO3陶瓷及其微波介电性能

以硝酸钙、硝酸镁、正硅酸乙酯为先驱体, 利用溶胶-凝胶法合成(Ca1-xMgx)SiO3(x=0.1、0.2、0.3、0.4、0.5)陶瓷粉体, 研究了Mg2+取代Ca2+对陶瓷物相组成、烧结特性以及微波介电性能的影响规律. 结果表明, Mg2+在CaSiO3中的最大固溶度不超过0.2；随着Mg2+对Ca2+取代量的增加, 陶瓷在烧结后的主晶相出现从CaSiO3相向CaMgSi2O6相的转变,陶瓷的烧结特性及介电性能出现先增加后下降的趋势；当x=0.3 时, 陶瓷体中CaSiO3相与CaMgSi2O6相共存, 克服了单相CaSiO3或CaMgSi2O6易成片长大的缺点,有效减少了陶瓷中残留的气孔, 提高烧结体致密性. (Ca0.7Mg0.3)SiO3在1320 益烧结后介电常数为6.62, 品质因数为36962 GHz.     

Charge-transfer processes in the assembly of Si(n)O(m) neutral clusters

The chemical bond formation in oxygen-rich Si(n)O(m) clusters was investigated by sampling the potential energy surface of the model systems SiO + SiO(2) → Si(2)O(3) and (SiO)(2) + SiO(2) → Si(3)O(4) along a two-dimensional reaction coordinate, by density functional theory calculations. Evidence for crossing between the weakly bound neutral-neutral (SiO)(n) + SiO(2) and the highly attractive ion-pair (SiO)(n)(+) + SiO(2)(-) surfaces was found. Analysis of frontier molecular orbitals and charge distribution showed that surface crossing involves transfer of valence electron charge from (SiO)(2) to SiO(2). The sum of the natural atomic charges over the (SiO)(n) and (SiO(2)) groups of the Si(n)O(m) cluster products, gave a net positive charge on the (SiO)(n) "core" and a net negative charge on the (SiO(2)) groups. This is interpreted as the "ion-pair memory" left on the Si(n)O(m) products by the charge-transfer mechanism and may provide a way to assess the role of charge-transfer processes in the assembly of larger Si(n)O(m) neutral clusters.     

Rate coefficient for the reaction SiO + Si2O2 at T = 10-1000 K

The reaction paths for the formation of Si3O3 molecules have been investigated at high level ab initio quantum chemical calculations by using the QCISD method with the 6-311++G(d,p) basis set. The cis-Si2O2 isomer does not participate in the chemical mechanism for the formation of Si3O3 molecules. Although the SiO + cis-Si2O2 reaction is exothermic and spontaneous, it is not expected to explain the growth mechanism of Si3O3 in the interstellar silicate grains of circumstellar envelopes surrounding M-type giants. The reaction of SiO with cyclic Si2O2 molecules is exothermic, is spontaneous, and has a nonplanar transition state. The Gibbs free energy for the transition state formation, (DeltaG0#), is around 5.5 kcal mol-1 at 298 K. The bimolecular rate coefficient for this reaction, kT, is about 1 x 10-12 cm3 molecule-1 s-1 at 298 K and in the collision limit, 1.5 x 10-10 cm3 molecule-1 s-1, at 500 K. The activation energy, Ea, is about 8 kcal mol-1. The enthalpy of Si3O3 fragmentation is 53.9 kcal mol-1 at 298 K. The SiO + cyclic Si2O2 reaction is expected to be the most prominent reaction path for the Si3O3 formation in interstellar environment and fabrication of silicon nanowires.     

共沉淀法掺杂SiO_2对V_2O_5-WO_3/TiO_2催化剂SCR性能的影响

通过共沉淀法将SiO_2组分掺入到V2O5-WO3/SiO_2-TiO_2催化剂TiO_2载体中,并通过多种物理化学手段,考察了不同SiO_2掺杂量对催化剂结构、表面性质与SCR性能的影响.结果表明,SiO_2掺入到TiO_2中,Si与Ti形成Si—O—Ti键,使催化剂比表面积增加.Si—O—Ti键的生成以及Si Ox物种上的-OH基团使催化剂表面Br?nsted酸增加,但新增的Br?nsted酸对SCR反应不利,并且SiO_2的掺杂也使得V~(5+)含量降低,Si—O—V键合作用使分散的VOx物种更难还原.Si组分以共沉淀法掺入到V_2O_5-WO_3/TiO_2催化剂会造成脱硝活性的显著下降.     

Growth of piezoelectric water-free GeO2 and SiO2-substituted GeO2 single-crystals

Using the slow-cooling method in selected fluxes, we have grown spontaneously nucleated single-crystals of pure GeO(2) and SiO(2)-substituted GeO(2) materials with the α-quartz structure. These piezoelectric materials were obtained in millimeter size as well-faceted, visually colorless, and transparent crystals. Cubic-like or hexagonal prism-like morphology was identified depending on the chemical composition of the single-crystals and on the nature of the flux. Both the silicon substitution rate and the homogeneity of its distribution were estimated by Energy Dispersive X-ray spectroscopy. The cell parameters of the flux-grown GeO(2) and Ge(1-x)Si(x)O(2) (0.038 ≤ x ≤ 0.089) solid-solution were deduced from their X-ray powder diffraction pattern. As expected, the cell volumes decrease as the silicon content substitution increases. A room temperature Infrared spectroscopy study confirms the absence of hydroxyl groups in the as-grown crystals. Unlike what was observed for hydrothermally grown GeO(2) crystals, these flux-grown oxide materials did not present any phase transition before melting as pointed out by a Differential Scanning Calorimetry study. Neither a α-quartz/β-quartz transition as encountered in SiO(2) near 573 °C nor a α-quartz to rutile transformation were detected for these GeO(2) and Ge(1-x)Si(x)O(2) single-crystals.     

Adsorption of silanes bearing nitrogenated Lewis bases on SiO2/Si (100) model surfaces

The present paper describes the one-pot procedure for the formation of self-assembled thin films of two silanes on the model oxidized silicon wafer, SiO2/Si. SiO2/Si is a model system for other surfaces, such as glass, quartz, aerosol, and silica gel. MALDI-TOF MS with and without a matrix, XPS, and AFM have confirmed the formation of self-assembled thin films of both 3-imidazolylpropyltrimethoxysilane (3-IPTS) and 4-(N-propyltriethoxysilane-imino)pyridine (4-PTSIP) on the SiO2/Si surface after 30 min. Longer adsorption times lead to the deposition of nonreacted 3-IPTS precursors and the formation of agglomerates on the 3-IPTS monolayer. The formation of 4-PTSIP self-assembled layers on SiO2/Si is also demonstrated. The present results for the flat SiO2/Si surface can lead to a better understanding of the formation of a stationary phase for affinity chromatography as well as transition-metal-supported catalysts on silica and their relationship with surface roughness and ordering. The 3-IPTS and 4-PTSIP modified SiO2/Si wafers can also be envisaged as possible built-on-silicon thin-layer chromatography (TLC) extraction devices for metal determination or N-heterocycle analytes, such as histidine and histamine, with "on-spot" MALDI-TOF MS detection.     

Thermal and ion-induced surface reactions of 1,1-difluoroethylene on Si(111)7 x 7 and vitreous SiO2

Thermal and ion-induced reactions of 1,1-difluoroethylene (1,1-C2H2F2 or iso-DFE) on Si(111)7 x 7 and vitreous SiO2 surfaces have been investigated by vibrational electron energy loss spectroscopy and thermal desorption spectrometry. Like ethylene, iso-DFE predominantly chemisorbs via a [2 + 2] cycloaddition mechanism onto the 7 x 7 surface as a di-sigma-bonded difluoroethane-1,2-diyl adstructure, which undergoes H abstraction and defluorination, producing hydrocarbon fragments and SiF(x) (x = 1-3) upon annealing to >700 K. Ion irradiation of Si(111)7 x 7 in iso-DFE at 50 eV impact energy appears to substantially enhance the production of hydrocarbon fragments and SiF(x)(), leading to stronger SiF4 desorption products over an extended temperature range (400-900 K). The observed SiC and SiF(x) produced on the 7 x 7 surface by ion irradiation in iso-DFE are found to be similar to those obtained by ion irradiation in the fluoromethane homologues, CF4 and CH2F2. The production of higher relative concentrations for the larger SiF(x) and C2-containing fragments is evidently favored on the 7 x 7 surface. On a vitreous SiO2 surface, ion irradiation in iso-DFE, unlike that in CF4 and CH2F2, appears to produce less SiF(x) than that on the 7 x 7 surface, which indicates that surface O does not interact strongly with the C2-containing fragments. The presence or absence of a C=C bond and the relative F-to-C ratio of the sputtering gas could therefore produce important effects on the resulting surface products obtained by low-energy ion irradiation.     

硅晶片上超薄氧化硅层厚度纳米尺寸效应的XPS研究

用X射线光电子能谱(XPS)测定了一系列厚度经过国际比对准确已知的硅晶片上的超薄(1.45nmd7.2nm)氧化硅膜的Si2p电子能谱和价带谱.结果表明:SiO2膜厚d2nm时,Si2p结合能最低,其原因可归结于此时光电离空穴既有来自SiO2中的原子极化对空穴的原子外弛豫,也有来自衬底Si的电荷移动对空穴的屏蔽(有效屏蔽距离大约是(2.5±0.6)nm);当d3nm时Si2p结合能增大,此时只有来自SiO2的原子外弛豫,d较小者的Si2p结合能较高.SiO2的价带电子结构也与其厚度纳米尺寸效应有关:当d2nm时价带中SiO2的O2p非成键电子峰的相对强度较强,O2p—Si3p和O2p—Si3s成键电子峰较弱.     

X-ray photoelectron spectroscopic analysis of Si nanoclusters in SiO2 matrix

We investigated silicon nanoclusters Si(nc) in a SiO2 matrix prepared by the plasma-enhanced chemical vapor deposition technique, using X-ray photoelectron spectroscopy (XPS) with external voltage stimuli in both static and pulsed modes. This method enables us to induce an additional charging shift of 0.8 eV between the Si2p peaks of the oxide and the underlying silicon, both in static and time-resolved modes, for a silicon sample containing a 6 nm oxide layer. In the case of the sample containing silicon nanoclusters, both Si2p peaks of Si(nc) and host SiO2 undergo a charging shift that is 1 order of magnitude larger (>15 eV), with no measurable difference between them (i.e., no differential charging between the silicon nanoclusters and the oxide matrix could be detected). By use of a measured Auger parameter, we estimate the relaxation energy of the Si(nc) in the SiO2 matrix as -0.4 eV, which yields a -0.6 eV shift in the binding energy of the Si(nc) with respect to that of bulk Si in the opposite direction of the expected quantum size effect. This must be related to the residual differential charging between the silicon nanoclusters and the oxide host. Therefore, differential charging is still the biggest obstacle for extracting size-dependent binding energy shifts with XPS when one uses the oxide peak as the reference.