Large-area Sb2Te3 nanowire arrays

High-density large-area nanowire arrays of thermoelectric material Sb(2)Te(3) have been successfully prepared using electrochemical deposition into the channels of the porous anodic alumina membrane. The morphologies, structure, and composition of the as-prepared Sb(2)Te(3) nanowires have been characterized using field-emission scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. Individual Sb(2)Te(3) nanowires are single crystalline and continuous with uniform diameters ( approximately 50 nm) throughout the entire length. The atomic ratio of Sb to Te is very close to the 2:3 stoichiometry.     

Vapor-liquid-solid and vapor-solid growth of phase-change Sb2Te3 nanowires and Sb2Te3/GeTe nanowire heterostructures

We report the synthesis and characterization of radial heterostructures composed of an antimony telluride (Sb2Te3) core and a germanium telluride (GeTe) shell, as well as an improved synthesis of Sb2Te3 nanowires. The synthesis of the heterostructures employs Au-catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms. Energy-dispersive X-ray spectrometry indicates that Sb and Ge are localized in the Sb2Te3 and GeTe portions, respectively, confirming the alloy-free composition in the core/shell heterostructures. Transmission electron microscopy and diffraction studies show that Sb2Te3 and GeTe regions exhibit rhombohedral crystal structure. Both Sb2Te3 and GeTe grow along the [110] direction with an epitaxial interface between them. Electrical characterization of individual nanowires and nanowire heterostructures demonstrates that these nanostructures exhibit memory-switching behavior.     

Phase equilibrium in the Sb2Se3-Gd2Te3 system

The Sb₂Se₃-Gd₂Te₃ system was studied using differential thermal analysis, X-ray powder diffraction, and microstructure examination. This is a quasi-binary system. Sb₂Se₃-based solubility at 300 K is 10 mol % Gd₂Te₃. The eutectic contains 20 mol % Gd₂Te₃ and melts at 760 K. One incongruently melting compound (870 K) of composition GdSbTe_1.5Se_1.5 was found in the system.     

Design in solid state chemistry based on phase homologies. Sb4Te3 and Sb8Te9 as new members of the series (Sb2Te3)m.(Sb2)n

Sb4Te3 and Sb8Te9 are members of the homology (Sb2Te3)m.(Sb2)n, with structures consisting of Sb2- and Sb2Te3-type slabs stacked along [001]; electrical conductivity and thermopower are reported for several members of this family.     

Sb_2Te_3纳米片的水热合成与表征

在水热条件下,以乙醇胺为还原剂,实现了亚碲酸根(TeO~(2-)_3)的分步还原,并以新生成的单质Te纳米棒为碲源,原位一步法合成出六方相Sb_2Te_3纳米片.采用X射线粉末衍射仪(XRD)、场发射扫描电子显微镜(FESEM)和透射电子显微镜(TEM)等对产物的物相、形貌及组成进行了表征.结果表明,产物Sb_2Te_3为六方纳米片,厚度约为100~200 nm,直径约为0.6~1.5μm,形貌均一,分散性良好.适宜的合成条件是水/乙醇胺体积比为8∶12,180℃下反应24 h.依据部分实验结果以及单质Te和六方相Sb_2Te_3晶体结构的比较,证明了Sb_2Te_3主要以外延方式在单质Te纳米棒表面生长,且两者的晶面取向为(003)Te//(003)Sb_2Te_3,[110]Te//[110]Sb_2Te_3.     

Propriétés thermiques et optiques des verres du système Sb2S3–As2S3–Sb2Te3

Thermal and optical properties of glasses of the Sb₂S₃–As₂S₃–Sb₂Te₃ system. The glass-forming region of Sb₂S₃–As₂S₃–Sb₂Te₃ is very wide. The As₂S₃ compound supports the formation of prepared glasses and their stability. They have only one glass-transition temperature (T_g), which varies from 167 to 214 °C. It drops when the content of Sb₂Te₃ increases. This semi-metal compound supports the crystallization of glasses in several stages. Whereas the optical gap (E_g) increases with the content of As₂S₃ in the Sb₂S₃–As₂S₃ and Sb₂Te₃–As₂S₃ binary systems, it is practically constant in the ternary one on the cut with 20% of Sb₂Te₃, and is worth on average 1.04 eV.     

Conversion of hexagonal Sb2Te3 nanoplates into nanorings driven by growth temperature

We describe a novel route for the conversion of hexagonal Sb(2)Te(3) nanoplates into nanorings driven by growth temperature in a simple solvothermal process. The transmission electron microscopy was employed to investigate systemically the morphology, size, crystallinity, and microstructure of the as-prepared products. The experiments indicated that the growth temperature had a great effect on the morphology of antimony telluride nanostructures. When the experiments were conducted at 200 °C, the hexagonal antimony telluride nanoplates were obtained. However, if the experiments were carried out at higher temperature of 230 °C, the hexagonal antimony telluride nanorings were achieved by dissolution of the inner part with a higher density of defects of the hexagonal nanoplates for the first time. A possible formation mechanism was proposed on the basis of experimental results and analysis. This work may open a new rational route for the synthesis of the hexagonal antimony telluride nanorings, which may have scientific and technological applications in various functional devices.     

添加La的Bi2Te3和Bi0.5Sb1.5Te3热电材料的电磁感应熔炼法制备及其热电性能

在N2气保护下,采用电磁感应法制备了添加La的Bi2Te3和Bi0.5Sb1.5Te3。运用X射线粉末衍射、电感耦合等离子光谱和扫描电子显微镜对材料的物相成分和形貌进行了表征。研究了La对Bi2Te3和Bi0.5Sb1.5Te3热电材料的电导率(σ)、Seebeck系数(S)和热导率(κ)的影响。实验结果表明,添加La明显降低了2种材料的热导率,提高了热电优值(ZT),添加La的Bi0.5Sb1.5Te3的热电优值在室温超过了1。     

Electrochemical aspects and structure characterization of VA-VIA compound semiconductor Bi2Te3/Sb2Te3 superlattice thin films via electrochemical atomic layer epitaxy

This paper concerns the electrochemical atom-by-atom growth of VA-VIA compound semiconductor thin film superlattice structures using electrochemical atomic layer epitaxy. The combination of the Bi2Te3 and Sb2Te3 programs and Bi2Te3/Sb2Te3 thin film superlattice with 18 periods, where each period involved 21 cycles of Bi2Te3 followed by 21 cycles of Sb2Te3, is reported here. According to the angular distance between the satellite and the Bragg peak, a period of 23 nm for the superlattice was indicated from the X-ray diffraction (XRD) spectrum. An overall composition of Bi 0.25Sb0.16Te0.58, suggesting the 2:3 stoichiometric ratio of total content of Bi and Sb to Te, as expected for the format of the Bi2Te3/Sb2Te3 compound, was further verified by energy dispersive X-ray quantitative analysis. Both field-emission scanning electron microscopy and XRD data indicated the deposit grows by a complex mechanism involving some 3D nucleation and growth in parallel with underpotential deposition. The optical band gap of the deposited superlattice film was determined as 0.15 eV by Fourier transform infrared spectroscopy and depicts an allowed direct type of transition. Raman spectrum observation with annealed and unannealed superlattice sample showed that the LIF mode has presented, suggesting a perfect AB/CB bonding in the superlattice interface.     

Formation and characterization of Sb2Te3 nanofilms on Pt by electrochemical atomic layer epitaxy

A nanocrystalline Sb2Te3 VA-VIA group compound thin film was grown via the route of electrochemical atomic layer epitaxy (ECALE) in this work for the first time. The electrochemical behavior of Te and Sb on Pt, Te on Sb-covered Pt, and Sb on Te-covered Pt was studied by methods of cyclic voltammetry, anode potentiodynamic scanning, and coulometry. A steady deposition of the Sb2Te3 compound could be attained after negatively stepped adjusting of the UPD potentials of Sb and Te on Pt in each of the first 40 depositing cycles. The structure of the deposit was proven to be the Sb2Te3 compound by X-ray diffraction. The 2:3 stoichiometric ratio of Sb to Te was verified by EDX quantitative analysis, which is consistent with the result of coulometric analysis. A nanocystalline microstructure was observed for the Sb2Te3 deposits, and the average grain size is about 20 nm. Cross-sectional SEM observation shows an interface layer about 19 nm in thickness sandwiched between the Sb2Te3 nanocrystalline deposit and the Pt substrate surface. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy and it is blueshifted in comparison with that of the bulk Sb2Te3 single crystal because of its nanocrystalline microstructure.     

Phase equilibria in the GeTe-Sb2Te3-Bi2Te3 quasi-ternary system

Phase equilibria in the GeTe-Sb₂Te₃-Bi₂Te₃ system were studied by differential thermal analysis, X-ray powder diffraction, and metallography and also by microhardness and density measurements in the polythermal sections GeSb₂Te₄-GeBi₂Te₄, GeTe-GeSbBiTe₄, GeSb₄Te₇-GeSbBiTe₄, GeSbBiTe₄-Sb₂Te₃, GeSbBiTe₄-Bi₂Te₃, and Ge₂Sb₂Te₅-GeSbBiTe₄, which are quasi-binary and partially quasi-binary sections. A quaternary compound of the composition GeSbBiTe₄ was synthesized for the first time, which crystallizes in the trigonal system (space group $R\bar 3m - D_{3d}^5$ ) with the unit cell parameters a = 6.27 Å and c = 38.40 Å (melting point 850 K).     

Ge2Sb2Te5的化学机械抛光研究进展

相变存储器由于具有非易失性、高速度、低功耗等优点被认为最有可能成为下一代存储器的主流产品,Ge2Sb2Te5(GST)作为一种传统相变材料已经被广泛应用在相变存储器中,而GST的化学机械抛光作为相变存储器生产的关键工艺目前已被采用.本工作综述了有关GST的化学机械抛光技术研究进展,讨论了GST化学机械抛光过程的影响因素,如下压力、转速、抛光垫、磨料、氧化剂、表面活性剂等,并对目前GST的化学机械抛光机理进行了归纳,进一步展望了GST的化学机械抛光技术的发展前景.