Measurements of return loss on OEIC structures,using optical low-coherence reflectometry

Optical low-coherence reflectometry (OLCR) has been applied for the first time to the ovaluation of optoelectronic integrated circuits (OEICs). Benefits are demonstrated for analysis and measurement of integrated structures. In particular reflection strengths of various integrated devices and interfaces on real fibred OEICs have been quantified.     

Optoelectronic integration based on GaAs material

Optoelectronic integrated circuits (OEICs) in which both optoelectronic and electronic devices are monolithically integrated can exhibit various advantages in improving performance, functionality and reliability. This review concerns the development of OEICs based on GaAs systems. The requirements of integration include the development of devices having high performance and structures suitable for integration, and fabrication techniques for planar, process-compatible integrated structures. Superior devices such as low-threshold-current quantum-well (QW) lasers, planar-structure metal-semiconductor-metal (MSM) photodiodes and the planar integration process have been developed, and these have been used to fabricate multichannel transmit- and receive-OEICs operating at gigabit rates. The applications of such OEICs have been demonstrated in high-speed optical links and 4×4 optical switches. The technological areas expected to be developed further are discussed in view of the future widespread applications of OEICs to communication and signal-processing systems.     

Modeling of Electrical Crosstalk in OEIC Modules

A complete set of tools for the calculation of electrical crosstalk in optoelectronic integrated circuits is presented. Typical chip architecture has been analyzed and relative results are obtained. The model can be easily applied to several wire-bonded and flip-chip OEICs. Design guidelines are presented and discussed.     

OEIC research in Korea

This paper presents a chronological overview of Korean activities in optoelectronics and optoelectronic integrated circuits (OEICs) undertaken mainly in university laboratories. OEIC transmitters and receivers for communications and semiconductor laser logic devices for optical switching and computing are briefly described.     

OEIC technologies for high-speed optical interconnection system

As the level of integration and the power of computation increase, methods of interconnecting computational elements attract more attention and the total system performance is bottlenecked by the problems associated with electrical interconnections. Optical interconnections have advantages of practically unlimited bandwidth and absence of crosstalk. To utilize such merits of optical interconnections, a large number of low-cost high-performance optoelectronic integrated circuits (OEICs) are needed. This paper focuses on monolithically integrated receiver OEICs that consist of InP/InGaAs p-i-n photodiodes and fully ion-implanted InP junction field-effect transistors (JFETs). In the formation of shallow InP p-n junctions we use a co-implantation technique in which we implant a group V element together with Be, a dopant, and take advantage of damage and stoichiometry effects. We fabricate a p-i-n/JFET amplifier receiver front-end circuit and a receiver 2×2 crosspoint switch circuit using this technique. We also develop bandwidth enhancement designs using inductive peaking and cascoding. Finally, we demonstrate a single-channel, free-space optical interconnection system with a bandwidth of 1.5 GHz and an interconnection length of 50 cm.     

光电综合仪器匹配技术的研究

通过对光电综合仪器三种特征功能单元的解剖，介绍光电综合仪器最佳匹配方案及其关键技术。     

Analysis of optical crosstalk within optoelectronic integrated circuits including lasers and photodetectors

Optical crosstalk from a 1.3 μm laser to a 1.55 μm photodiode on a single InP substrate, and its suppression within 1.3 μm/1.5 μm Y-junction transceiver OEICs, has been analyzed experimentally. The results indicate that the optical crosstalk suppression is limited by the accumulated light in the OEIC substrate coming mainly from the spontaneous emission of the integrated laser and from stray light at the laser–waveguide butt joint interface. For OEICs, integrating lasers and photodetectors, the achievable optical intra-chip crosstalk at present will be in the range of 30–40 dB at the required small die dimensions. Received: 16 May 2001 / / Published online: 23 October 2001     

Two-dimensional optoelectronic devices for future optical switching and information processing

Recent progress is reviewed in surface-normal optoelectronic devices primarily for use in optical switching and information processing. A type of optoelectronic integrated circuit (OEIC), the surface-normal two-dimensional array, is fabricated using these devices. This improves on first-generation OEICs by featuring large-scale integration in a small area, which results in a higher production yield. It also has structures which can easily be integrated with electronic circuits and can meet multichannel requirements. This approach supports optoelectronic progress towards optical information processing.     

MgZnO薄膜及其量子阱和超晶格的发光特性

MgO和ZnO形成合金Mg_xZn_1-xO的带隙可以在3.3～7.9eV之间变化,在制备紫外波段光电器件方面有着广阔的应用前景.由ZnO和MgZnO交替沉积而成的ZnO/Mg_xZn_1-xO量子阱和超晶格在激光器、光探测器和其他光电器件方面也有潜在的应用价值.回顾最近几年对MgZnO薄膜材料发光特性的研究进展,介绍在不同衬底上用不同方法制备MgZnO合金薄膜的制备技术、发光特性以及发光特性与薄膜中Mg含量的关系;综述近年来在ZnO/Mg_xZn_1-xO超晶格、量子阱研究上的成果,特别介绍了ZnO/Mg_xZn_1-xO对超晶格、量子阱的发光特性、发光机理以及发光特性与势垒层镁含量、器件温度的关系.     

A Simplified Numerical Simulation Method Considering Active Devices for Opto-Electronic Mixed Modules

A simplified simulation method based on the FDTD technique that can handle active devices is proposed. This method well suits the electrical crosstalk analysis of multi-channel integrated, opto-electronic mixed modules. We apply this method to an 8-channel integrated super-compact high-sensitivity optical module. The results show good agreement between simulations and measurements.     

Electro-optical modulator using SiO2 waveguides with thermal poling on a Si substrate

A novel optical modulator using SiO₂ waveguides on a silicon substrate is proposed. The modulator is analyzed and designed with the finite element method. The numerical results have shown that an optimally designed modulator can give a broad bandwidth, good impedance match, and low cost. The proposed modulator can be fabricated easily using Si-based very large-scale integrated technology, and it is very suitable for opto-electronic integrated circuits.     

Progress of coherent optical fibre communication systems

The recent progress of coherent optical fibre communication systems is reviewed. System constituent technologies, such as coherent optical modulation-demodulation, optical direct amplification for repeaters and single polarization fibre transmission are outlined. Several important optical device technologies, such as frequency stabilization of semiconductor lasers, AM and FM quantum noise and their reduction, and integrated opto-electronic devices, are also described. Finally, on the basis of the current state of the art in these technological areas, the expected system performance and future problems are discussed.     

光互连技术在信号处理中的某些应用

叙述了近年来在天津大学研究及开发光互连网络的情况。这些研究围绕着解决信号传输中的延迟和通信带宽,开展的研究工作有：完成包括64个处理器的光电混合处理器阵列系统;giga—bit／s机群系统光互连链路;在链路中采用时分复用技术(TDM),实现了“虚拟并行传输”;在链路中设计了硬件路由功能,并组成光环网;在网络系统中实现波长路由,并建立了波长路由双环网,采用该技术可以避免路由延迟;在光互连网络中应用了MEMS光开关,实现了星型一环形二级结构;用同步光传输技术实现了多通道数据传输卡。     

Graphene integrated photodetectors and opto-electronic devices — a review

Graphene and other two-dimensional materials have recently emerged as promising candidates for next-generation,high-performance photonics. In this paper, the progress of research into photodetectors and other electro-optical devices based on graphene integrated silicon photonics is briefly reviewed. We discuss the performance metrics, photo-response mechanisms, and experimental results of the latest graphene photodetectors integrated with silicon photonics. We also lay out the unavoidable performance trade-offs in meeting the requirements of various applications. In addition, we describe other opto-electronic devices based on this idea. Integrating two-dimensional materials with a silicon platform provides new opportunities in advanced integrated photonics.     

基于二维振镜的多光谱集成靶标设计及应用

为了提高基于二维振镜光轴平行性检测方法的检测精度,简化测量操作步骤,设计了一种基于二维振镜扫描系统的多光谱集成靶标。通过多光谱集成靶板与LED照明光源结合,解决一靶专用中需要频繁更换、反复调校靶板及光源的问题。利用二维振镜进行十字分划中心对准,提高CCD检测方法的测量精度;采用像差优化的卡塞格林准直系统,改善十字分划成像质量。通过光轴平行性检测实验,多光谱集成靶标校准精度达到了0.10 mard,该精度满足多光谱光电系统光轴平行性高精度和自动化检测的要求。     

光电图像自动识别跟踪技术

概述自动目标识别的军事应用,论述光电混合实时光学相关器算法和实时器件,并介绍光电图像自动跟踪技术的发展情况。     

Metamorphic In0.53Ga0.47As p-I-n photodetector grown on GaAs substrates by low-pressure MOCVD

Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin lowtemperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55-μm optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50 × 50 (μm) exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit (OEIC) devices.     

Plasmonic atoms and plasmonic molecules

The proposed paradigm of plasmonic atoms and plasmonic molecules allows one to describe and predict the strongly localized plasmonic oscillations in the clusters of nanoparticles and some other nanostructures in uniform way. Strongly localized plasmonic molecules near the contacting surfaces might become the fundamental elements (by analogy with Lego bricks) for the construction of fully integrated opto-electronic nanodevices of any complexity and scale of integration. PACS 78.67.-n; 73.20.Mf; 32.50.+d     

光纤到户用光电集成单纤双向器件的研究

研究了光电集成器件的耦合与封装的关键技术,首先分析光纤与PLC波导的z向偏移及角度偏移与耦合效率的关系,发布其3dB容差分别为70μm及5°以内,并分析存在8°反射角及填充折射率匹配胶时耦合情况并仿真验证。该器件采用表面贴光子技术、无源对准、非气密封装实现光与电、有无源的多功能结合。测试了器件的激光器与探测器性能,测试结果表明,该光电集成器件边模抑制比、灵敏度等参量优良。     

A Bragg grating embedded in a slab waveguide fabricated by the implantation of high-energy light ions in KLTN substrate

Electro-optically tunable transmission grating was imprinted in potassium lithium tantalate niobate by irreversible spatial patterning of the dielectric constant. While embedded into waveguided architecture, it provides a reliable and versatile building block for opto-electronic circuitry, capable of both active switching and multiplexing. Realization of such a block is critical for the fabrication of integrated photonic circuits in electro-optic substrates by means of Refractive Index Engineering by fast ion implantation.