Dispersion characteristic of hexagonal and square lattice chalcogenide As2Se3 glass photonic crystal fiber

In this paper, we report a chalcogenide As₂Se₃ glass photonic crystal fiber (PCF) for dispersion compensating application. We have used the improved fully vectorial effective index method (IFVEIM) for comparing the dispersion properties (negative and zero dispersion) and effective area in hexagonal and square lattice of As₂Se₃ glass PCF using different wavelength windows. It has been demonstrated that due to their negative dispersion parameter and negative dispersion slope in wavelength range 1.2-2.5 μm, both lattice structures of As₂Se₃ glass PCFs, with pitch (Λ = 2 μm), can be used as dispersion compensating fibers. Further, design parameters have been obtained to achieve zero dispersion in these fibers. It is also shown that As₂Se₃ glass PCF provides much higher negative dispersion compared to silica PCF of the same structure, in wavelength range 1.25-1.6 μm and hence such PCF have high potential to be used as a dispersion compensating fiber in optical communication systems.     

Laser synthesis of thin layers of In4Se3, In4Te3 and modification of their structure and characteristics

Trends of structural modifications and phase composition occurring in In₄Se₃ thin films and In₄Se₃-In₄Te₃ epitaxial heterojunctions under laser irradiations have been investigated. Dynamics of the layer structure modification, depending on laser modes, i.e. pulse duration τ = 2-4 ms, irradiation intensity I₀ = 10-50 kW/cm², number of pulses N = 5-50, was studied by electron microscopy. An increase in laser influence promotes enlargement of the layer grains and transformation of their polycrystalline structure towards higher degree of stoichiometry. As a result of laser solid restructuring heterojunctions of In₄Se₃-In₄Te₃, being photosensitive within 1.0-2.0 μm and showing fast time of response, have been obtained. Laser modification of structure enables one to optimize electrical and optical properties of functional elements on the base of thin films and layers of In₄Se₃, In₄Te₃, widely used as infrared detectors and filters.     

Hydrostatic pressure study of the structural phase transitions and superconductivity in single crystals of (Ba1−xKx)Fe2As2 (x=0 and 0.45) and CaFe2As2

We studied the effect of hydrostatic pressure (P) on the structural phase transitions and superconductivity in the ternary and pseudo-ternary iron arsenides CaFe₂As₂, BaFe₂As₂, and (Ba_0.55K_0.45)Fe₂As₂, by means of measurements of electrical resistivity (ρ) in the 1.8-300 K temperature (T) range, pressures up to 20 kbar, and magnetic fields up to 9 T. CaFe₂As₂ and BaFe₂As₂ (lightly doped with Sn) display structural phase transitions near 170 and 85 K, respectively, and do not exhibit superconductivity in ambient pressure, while K-doped (Ba_0.55K_0.45)Fe₂As₂ is superconducting for T<30 K. The effect of pressure on BaFe₂As₂ is to shift the onset of the crystallographic transformation down in temperature at the rate of ~−1.04 K/kbar, while shifting the whole ρ(T) curves downward, whereas its effect on superconducting (Ba_0.55K_0.45)Fe₂As₂ is to shift the onset of superconductivity to lower temperatures at the rate of ~−0.21 K/kbar. The effect of pressure on CaFe₂As₂ is first to suppress the crystallographic transformation and induce superconductivity with onset near 12 K very rapidly, i.e., for P<5 kbar. However, higher pressures bring about another phase transformation characterized by reduced-resistivity, and the suppression of superconductivity, confining superconductivity to a narrow pressure dome centered near 5 kbar. Upper critical field (H_c2) data in (Ba_0.55K_0.45)Fe₂As₂ and CaFe₂As₂ are discussed.     

Preparation and magnetic properties of BaFe12O19/Ni0.8Zn0.2Fe2O4 nanocomposite ferrite

Nanocomposite of hard (BaFe₁₂O₁₉)/soft ferrite (Ni_0.8Zn_0.2Fe₂O₄) have been prepared by the sol–gel process. The nanocomposite ferrite are formed when the calcining temperature is above 800 °C. It is found that the magnetic properties strongly depend on the presintering treatment and calcining temperature. The “bee waist” type hysteresis loops for samples disappear when the presintering temperature is 400 °C and the calcination temperature reaches 1100 °C owing to the exchange-coupling interaction. The remanence of BaFe₁₂O₁₉/Ni_0.8Zn_0.2Fe₂O₄ nanocomposite ferrite with the mass ratio of 5:1 is higher than a single phase ferrite. The specific saturation magnetization, remanence magnetization and coercivity are 63 emu/g, 36 emu/g and 2750 G, respectively. The exchange-coupling interaction in the BaFe₁₂O₁₉/Ni_0.8Zn_0.2Fe₂O₄ nanocomposite ferrite is discussed.     

Using of chelating resin to study the kinetic desorption of Eu(III) from humic acid-Al2O3 colloid surfaces

The association of organic-inorganic colloid-borne trace elements was investigated. Radionuclide ^152+154Eu(III) was chosen as a representative and chemical homologue for trivalent lanthanide and actinide ions present in radioactive nuclear waste. Effect of pH and contact time of organic-inorganic/Eu(III) on the kinetic dissociation of Eu(III) from HA-Al₂O₃ colloids was studied. The kinetic desorption behavior of sorbed ^152+154Eu(III) from humic acid-γ-Al₂O₃ colloids was studied at pH values of 4.5 ± 0.2, 5.3 ± 0.2 and 6.5 ± 0.2, respectively, by the addition of the chelating resin. The experimental results suggest that the fractions of irreversible sorption of radionuclide ^152+154Eu(III) to HA-Al₂O₃ colloids increase with increasing pH values, and are independent of aging time. At least two different species, “weak” and “strong” dissociation fractions, are required to simulate the kinetic desorption of ^152+154Eu(III) from HA-Al₂O₃ colloids. The species of Eu(III) sorbed on HA-Al₂O₃ colloids move from “weak” sites to “strong” sites with increasing aging time, whereas the fractions of irreversible sorption are independent of aging time. The results are important for the evaluation of radionuclides’ behavior in the environment.     

Annealing effects on the structural and electrical transport properties of n-type Bi2Te2.7Se0.3 thin films deposited by flash evaporation

N-type Bi₂Te_2.7Se_0.3 thermoelectric thin films with thickness 800 nm have been deposited on glass substrates by flash evaporation method at 473 K. Annealing effects on the thermoelectric properties of Bi₂Te_2.7Se_0.3 thin films were examined in the temperature range 373-573 K. The structures, morphology and chemical composition of the thin films were characterized by X-ray diffraction, field emission scanning electron microscope and energy dispersive X-ray spectroscopy, respectively. Thermoelectric properties of the thin films have been evaluated by measurements of the electrical resistivity and Seebeck coefficient at 300 K. The Hall coefficients were measured at room temperature by the Van der Pauw method. The carrier concentration and mobility were calculated from the Hall coefficient. The films thickness of the annealed samples was measured by ellipsometer. When annealed at 473 K, the electrical resistivity and Seebeck coefficient are 2.7 mΩ cm and −180 μV/K, respectively. The maximum of thermoelectric power factor is enhanced to 12 μW/cm K².     

An all-optical bit-error indicating scheme based on self-phase modulation and filtering

In this paper, a novel all-optical bit-error indicating scheme is numerically studied. The bit-error indicating function is achieved by two all-optical processing stages. Firstly, the amplified original bit stream propagates through a high-nonlinear fiber and experiences self-phase modulation which causes intensity-dependent spectrum broadening and split. And then, the bit stream output from the high-nonlinear fiber is filtered by a band-pass filter with the same central wavelength as the original bit stream to generate an error bit indicating signal. The error bit indicating signal, in which only the “Error” bits have the highest peak power, is synchronous with the delayed original bit stream. Therefore, the position of the “Error” bits in the original bit stream can be identified by setting only one judge threshold in the error bit indicating signal. The scheme is demonstrated for an 80 Gb/s bit stream with return-to-zero format by simulation. The results show that the scheme can be used for the all-optical bit-error indicating of the super high bit-rate systems using the return-to-zero format which is favored in the optical time division multiplexing transmission systems.     

Ultrafast non-linear optical properties of Ge20As25Se55 chalcogenide films

The non-resonant third-order non-linear optical properties of amorphous Ge₂₀As₂₅Se₅₅ films were studied experimentally by the method of the femtosecond optical heterodyne detection of optical Kerr effect. The real and imaginary parts of complex third-order optical non-linearity could be effectively separated and their values and signs could be also determined, which were 6.6 × 10⁻¹² and −2.4 × 10⁻¹² esu, respectively. Amorphous Ge₂₀As₂₅Se₅₅ films showed a very fast response in the range of 200 fs under ultrafast excitation. The ultrafast response and large third-order non-linearity are attributed to the ultrafast distortion of the electron orbitals surrounding the average positions of the nucleus of Ge, As and Se atoms. The high third-order susceptibility and a fast response time of amorphous Ge₂₀As₂₅Se₅₅ films makes it a promising material for application in advanced techniques especially in optical switching.     

Electronic band structure and Fermi surface of new low-temperature Ni-based superconductors: 3.3 K (Ni2P2)(Sr4Sc2O6) and 2.7 K (Ni2As2)(Sr4Sc2O6) from first principles

Based on first-principle FLAPW-GGA calculations, we have investigated structural and electronic properties of the recently synthesized tetragonal (space group P4/nmm) nickel-based pnictide oxide superconductors: 3.3 K (Ni₂P₂)(Sr₄Sc₂O₆) and 2.7 K (Ni₂As₂)(Sr₄Sc₂O₆). Optimized structural data, electronic bands, total and partial densities of states, and Fermi surface topology have been obtained and discussed in comparison with available experiments and with their Fe-based (Fe₂P₂)(Sr₄Sc₂O₆) and (Fe₂As₂)(Sr₄Sc₂O₆) analogs.     

Two routes to polycrystalline CoSi2 thin films by co-sputtering Co and Si

Two processes for the fabrication of polycrystalline CoSi₂ thin films based on the codeposition of Co and Si by sputtering were studied and compared. The first process involved “annealing after deposition”, where Co and Si are codeposited at ambient temperature and then crystallized by annealing. This process yielded randomly oriented plate-like CoSi₂ grains with a grain size that is governed by the nanostructure of the as-deposited film. Polycrystalline CoSi₂ thin films were obtained at a process temperature of 170 °C, which was much lower than the annealing temperature of 500 °C needed for Co/Si bilayers. The second process involved “heating during deposition”, where Co and Si are codeposited on heated substrates. This process yielded CoSi₂ grains with a columnar structure, and the grain size and degree of (1 1 1) orientation are temperature dependent. The sheet resistance of the resulting films was determined by the preparation temperature regardless of the deposition process used, i.e. “annealing after deposition” or “heating during deposition”. Temperatures of 500 °C and higher were needed to achieve CoSi₂ resistivity of 40 μΩ cm or lower for both processes.     

Influence of valence states and co-ordination of cobalt ions on dielectric properties of PbO-Bi2O3-As2O3:CoO glass system

The glasses of the composition (40−x) PbO-15Bi₂O₃-45As₂O₃-xCoO, with 0≤x≤0.6 mol% in the steps of 0.1 were synthesized. The dielectric properties viz., dielectric constant, loss and ac conductivity over moderately larger ranges of frequency and temperature were investigated. The results were analyzed with the aid of the data on optical absorption and IR spectra. The analysis indicated that there is an increase in the insulating strength of the glasses with increase in the concentration of CoO up to 0.4 mol%.     

Iron isotope effect on Tc in optimally-doped (Ba,K)Fe2As2 (Tc = 38 K) and SmFeAsO1−y (Tc = 54 K) superconductors

We report the iron isotope effect on a transition temperature (T_c) in an optimally-doped (Ba,K)Fe₂As₂ (T_c = 38 K) and SmFeAsO_1−y (T_c = 54 K) superconductors. In order to obtain the reliable isotope shift in T_c, twin samples with different iron isotope mass are synthesized in the same conditions (simultaneously) under high-pressure. We have found that (Ba,K)Fe₂As₂ shows an inverse iron isotope effect α_Fe = −0.18 ± 0.03 while SmFeAsO_1−y shows a small iron isotope effect α_Fe = −0.02 ± 0.01, where the isotope exponent α is defined by T_c ∼ M^−α (M is the isotopic mass). The results show that α_Fe changes in the iron-based superconductors depending on the system. The distinct iron isotope effects imply the exotic coupling mechanism in the iron-based superconductors.     

High resolution fourier transform spectrum of PD3 in the region of the stretching overtone bands 2ν1 and ν1+ν3

The infrared spectrum of the PD₃ molecule has been measured in the region of the first stretching overtone bands on a Fourier transform spectrometer with a resolution of 0.0068 cm⁻¹ and analyzed for the first time. More than 800 transitions with J^max=15 have been assigned to the bands 2ν₁ and ν₁+ν₃. An effective Hamiltonian was used which takes into account both the presence of resonance interactions between the states (2 0 0 0) and (1 0 1 0), and interactions of these with the third stretching vibrational state of the v=2 polyad, (0 0 2 0). A set of 44 spectroscopic parameters is obtained from the fit. This reproduces the 305 initial “experimental” upper rovibrational energies with an rms=0.0015 cm⁻¹.     

Studies on electrodeposited As2S3 thin films by double exposure holographic interferometry technique

Arsenic trisulphide (As₂S₃) thin films have been deposited onto stainless steel and fluorine doped tin oxide (FTO) coated glass substrates by electrodeposition technique using arsenic trioxide (As₂O₃) and sodium thiosulphate (Na₂S₂O₃) as precursors and ethylene diamine tetracetic acid (EDTA) as a complexing agent. Double exposure holographic interferometry (DEHI) technique was used to determine the thickness and stress of As₂S₃ thin films. It was observed that the thickness of the thin film increases whereas film stress to the substrate decreases with an increase in the deposition time. X-ray diffraction and water contact angle measurements showed polycrystalline and hydrophilic surface respectively. The bandgap energy increases from 1.82 to 2.45 eV with decrease in the film thickness from 2.2148 to 0.9492 μm.     

Influence of epitaxial growth on phase competition in Pr0.5Sr0.5MnO3 films

A series of Pr_0.5Sr_0.5MnO₃ (PSMO) films with various thickness were epitaxially grown on substrates of (0 0 1)-oriented (LaAlO₃)_0.3(SrAl_0.5Ta_0.5O₃)_0.7 (LSAT), LaAlO₃ (LAO) and SrTiO₃ (STO), and (0 1 1)-oriented STO using pulse laser deposition. Influence of epitaxial growth on phase competition was investigated. A ferromagnetic metal to antiferromagnetic insulator (FMM-AFI) transition upon cooling is present in both largely compressed situations deposited on LAO (0 0 1) and tensile cases deposited on STO (0 0 1) but absent in little strained films grown on LSAT (0 0 1), indicating that the antiferromagnetic insulating state is favored by strains. On the other hand, the 400 nm films deposited on (0 1 1)-oriented STO as well as LAO substrates show FMM-AFI transition. These results reveal that both the orientation of epitaxial growth and substrate-induced strain affect the FMM-AFI transition.     

The effect of addition of gallium on the thermal stability and crystallization kinetic parameters of GaxSe100−x glass system

Differential scanning calorimetry (DSC) technique was used to study the kinetics of amorphous to crystalline transformation for Ga_xSe_100−x glass system (x=0, 2.5 and 5 at%). The kinetic parameters of Ga_xSe_100−x glass system under non-isothermal conditions are analyzed by the model-free and model-fitting models at different constant heating rates (5-50 K/min). A strong heating rate dependence of the effective activation energy of crystallization was observed. The analysis of the present data shows that the effective activation energy of crystallization is not constant but varies with the degree of crystallization and with temperature as well. The crystallization mechanisms examined using the local Avrami exponents indicate that one mechanism (volume nucleation with one-dimensional growth) is responsible for the crystallization process for heating rates 5-50 K/min for Se glass and two mechanisms (volume nucleation with two- and one-dimensional growth) are working simultaneously during the amorphous-crystalline transformation of the Ga_2.5Se_97.5 and Ga₅Se₉₅ glasses (5-50 K/min). The reaction model that may describe crystallization process of all the compositions of Ga_xSe_100−x glass system is Avrami-Erofeev model (g(α)=[−ln(1−α)]^1/n) with n=2 for Se glass. While for Ga_2.5Se_97.5 and Ga₅Se₉₅ glasses, the values of n are equal to 3 and 2 for the heating rates 5-20 and 35-50 K/min, respectively. A good agreement between the experimental and the reconstructed (α-T) curves has been achieved. The transformation from amorphous to crystalline phase in Ga_xSe_100−x glass system demonstrates complex multi-step involving several processes.     

Electrochemically deposited photoactive CdIn2Se4 thin films: Structural and optical studies

Electrochemical synthesis of photoactive cadmium-indium-selenide (CdIn₂Se₄) thin films at ambient temperature was reported. The nanocrystalline nature and 1:2:4 elemental chemical stoichiometric ratio for Cd, In and Se were obtained from the X-ray diffraction and energy dispersive X-ray analysis, respectively. Irregular shaped islands of about 400-500 nm in sizes composed of large number of small (∼30-40 nm) spherical grains were confirmed from the atomic force microscopy and the scanning electron microscopy images. The photoelectrochemical measurement of CdIn₂Se₄ film electrode in presence of 1 M polysulphide electrolyte revealed 0.42% photoelectrochemical device conversion efficiency, under the light illumination intensity of 80 mW/cm².     

Magnetic field effect on the pairing state competition in quasi-one-dimensional organic superconductors (TMTSF)2X

We study the effect of the magnetic field on the pairing state competition in organic conductors (TMTSF)₂X by applying random phase approximation to a quasi-one-dimensional extended Hubbard model. We show that the singlet pairing, triplet pairing and the Fulde–Ferrell–Larkin–Ovchinnikov (FFLO) superconducting states may compete when charge fluctuations coexist with spin fluctuations. This rises a possibility of a consecutive transition from singlet pairing to FFLO state and further to S_z = 1 triplet pairing upon increasing the magnetic field. We also show that the singlet and S_z = 0 triplet components of the gap function in the FFLO state have “d-wave” and “f-wave” forms, respectively, which are strongly mixed.     

Diode-end-pumped passively Q-switched Nd:Y0.8Lu0.2VO4 laser with Cr:YAG crystal

A diode end-pumped passively Q-switched Nd: Y_0.8Lu_0.2VO₄ laser with a Cr⁴⁺: YAG crystal is first demonstrated in this paper. The maximum continuous wave (CW) output power of 5.59 W is obtained at the incident pump power of 13.07 W with the output transmission T = 20%, resulting in an optical-to-optical efficiency of 42.7%. For Q-switching operation, the measured pulse duration of 8.5 ns, the pulse energy of 45.24 μJ and the peak power of 5.32 kW are respectively obtained for the output transmission of 50% when the Cr⁴⁺: YAG crystal is used with an initial transmission (T₀) of 60%.     

Preparation and wear resistance of pulse electrodeposited Ni-W/Al2O3 composite coatings

The aim of this work is to obtain the electroplating parameters for preparation of Ni-W/Al₂O₃ composite coating with high tungsten content, high micro-hardness and excellent wear resistance by pulse plating procedure. Our results showed that the duty cycle is a dominant parameter for the tungsten content in the coating and the tungsten content increases significantly with increasing duty cycle. The further analysis showed the great influence of tungsten content on micro-hardness of the coating. A maximum micro-hardness of about 859 Hv was obtained in pulse electrodeposited Ni-W/Al₂O₃ composite with tungsten content of 40 wt.% at a peak current density of 20 A/dm², a duty cycle of 80%, a pulse frequency of 1000 Hz and a particle loading of 10 g/L alumina in the plating bath. Although the hardness of Ni-W/Al₂O₃ composite coating was only slightly affected by the alumina content of the deposits prepared in present investigation, the alumina content effect on the tribological characteristic of Ni-W/Al₂O₃ composite coatings is significant. The friction coefficient was lowered to 0.25 and the wear loss was reduced to 1.05 mg by setting the control factors according to the values mentioned above for obtaining the coating with the highest micro-hardness.