Properties of the defect mode in one-dimensional ferroelectric Si/C60 photonic crystals

In the present paper, a novel photonic crystal (PC) defect mode is designed by inserting a ferroelectric material layer (LiNbO₃) into Si/C₆₀ one-dimensional PCs. The band structure of the ferroelectric PCs is numerically analyzed by the transfer matrix method (TMM). The width of the photonic band gap increases by 80 nm and a defect mode appears at a central wavelength of 680 nm when a 150 nm LiNbO₃ layer is inserted into the Si/C₆₀ PC structure. The defect mode in the band gap shifts linearly with the change in electric field. The defect mode shifts by 11.2 nm toward shorter wavelengths when the thin film is subjected to a DC voltage of 1 KV.     

A comparative study of continuous laser operation on the F3/2-I9/2 transitions of Nd:GdVO4 and Nd:YVO4 crystals

A comparative study of Nd:GdVO₄ and Nd:YVO₄ crystal lasers pumped by a fiber-coupled diode array has been conducted at the ⁴F_3/2-⁴I_9/2 transitions wavelengths of 912 nm and 914 nm, as well as when intracavity frequency-doubled to 456 nm and 457 nm, respectively. At the fundamental wavelength of 912 nm and second harmonic wavelength of 456 nm, maximum output powers from the Nd:GdVO₄ crystal laser were 7.85 W and 4.6 W at a pump power of 29 W. All the results obtained from Nd:GdVO₄ were superior to those of Nd:YVO₄, indicating that Nd:GdVO₄ is a more efficient laser crystal than Nd:YVO₄ for laser operation on the ⁴F_3/2-⁴I_9/2 transitions.     

Luminescence investigation of red phosphors Ca0.54Sr0.34−1.5xEu0.08Smx(MoO4)y (WO4)1−y for UV-white LED device

Ca_0.54Sr_0.34−1.5xEu_0.08Sm_x(MoO₄)_y (WO₄)_1−y red phosphors were prepared by solid-state reaction using Na⁺ as a charge compensator for light-emitting diodes (LED). The effects of Na⁺ concentration, synthesis temperature, reaction time and Eu³⁺ concentration were studied for the properties of luminescence and crystal structure of red phosphors. The results show that the optimum reaction condition is 6%, 900 °C, 2 h and 8%. The photoluminescence spectra show that red phosphors are effectively excited at 616 nm by 292, 395 and 465 nm. The wavelengths of 465 nm nicely match the widely applied emission wavelengths of blue LED chips.     

Growth and spectroscopic properties of Yb-doped Li6Y(BO3)3 single crystal

The spectroscopic properties of high-quality Czochralski grown 20% Yb³⁺-doped Li₆Y(BO₃)₃ single crystal as new promising laser material are presented. The crystal was seeded-grown in the 〈0 1 0〉 direction and its crystallinity was measured using X-ray rocking curve analysis. Low temperature transmission spectrum exhibits broad bands in a short range of wavelengths and two sharp lines at 972.5 and 978 nm, interpreted as two zero-lines of two nonequivalent Yb³⁺ centers inside the lattice. The fluorescence lifetimes associated to these two intense lines are different: 0.867 and 1.33 ms. An attempt of determination of the Stark sublevels energies of the ⁴F_5/2 and ⁴F_7/2 manifolds of the two Yb³⁺ nonequivalent ions is given. The polarized absorption and emission spectra were also recorded at room temperature and we conclude that the most favorable emission line for laser application could be around 1042 nm in n_g polarization.     

Theoretical investigation of the reflectivity of fullerene-(C60, C70)/AlN multilayers in UV region

Theoretical calculations via a transfer matrix method (TMM) were performed to investigate the possibility of fullerene/AlN multilayer films acting as one-dimensional (1D) photonic band gap (PBG) crystals. The response within and out of the periodic plane of (C₆₀, C₇₀)/AlN multilayers was studied. (C₆₀, C₇₀)/AlN multilayer films presented incomplete PBG behavior in UV region. C₆₀/AlN multilayers with two pairs of 49 nm-C₆₀ and 21 nm-AlN layers exhibited a high reflectivity of 90.4% at a wavelength of about 200 nm. As a consequence, this photonic crystal may be important for achieving materials with an incomplete band gap in the UV region.     

Defect assisted subwavelength resolution in III-V semiconductor photonic crystal flat lenses with n = −1

We propose a III-V semiconductor photonic crystal slab designed to operate as a n = −1 superlens at λ₀ = 1.55 μm. The structure consists of air holes arranged in a two-dimensional triangular lattice, of period a, nanopatterned in an InP/InGaAsP/InP slab. Exploiting the second pass-band regime (a/λ₀ ∼ 0.31), subwavelength resolutions as low as 0.38λ₀ for planar lenses have been obtained by the insertion of hexagonal nanocavities within the crystal.     

Diode-pumped Nd:LuVO4-Nd:YLiF4 crystals blue laser at 489 nm by intracavity sum-frequency-mixing

We present a laser architecture to obtain continuous-wave blue radiation at 489 nm. An 809 nm diode-pumped the Nd:LuVO₄ crystal emitting at 916 nm. A part of the pump power was then absorbed by the Nd:LuVO₄ crystal. The remaining was used to pump the Nd:YLiF₄ (Nd:YLF) crystal emitting at 1047 nm. Intracavity sum-frequency mixing at 916 and 1047 nm was then realized in a LiB₃O₅ (LBO) crystal to reach the blue radiation. We obtained a continuous-wave output power of 425 mW at 489 nm with a pump laser diode emitting 18.4 W at 809 nm.     

Investigation of Nd:YVO4/YVO4 composite crystal and its laser performance pumped by a fiber coupled diode laser

Thermal effect control is critical to scale the output power of diode end-pumping solid lasers to several watts up and beyond. Diffusion bonding crystal has been demonstrated to be an effective method to relieve the thermal lens for the end-pumping laser crystal. The temperature distribution and thermal lens in Nd:YVO₄/YVO₄ composite crystal was numerically analyzed and compared with that of Nd:YVO4 crystal in this paper. The end-pumping Nd:YVO₄/YVO₄ composite crystal laser was set up and tested with z cavity. The maximum output power of 9.87 W at 1064 nm and 6.14 W at 532 nm were obtained at the pumping power of 16.5 W. The highest optical-optical conversion efficiencies were up to 60% at 1064 nm and 40% at 532 nm, respectively.     

Waveguiding and photoluminescence in Er-doped Ta2O5 planar waveguides

The optimization of erbium-doped Ta₂O₅ thin film waveguides deposited by magnetron sputtering onto thermally oxidized silicon wafer is described. Optical constants of the film were determined by ellipsometry. For the slab waveguides, background losses below 0.4 dB/cm at 633 nm have been obtained before post-annealing. The samples, when pumped at 980 nm yielded a broad photoluminescence spectrum (FWHM∼50 nm) centred at 1534 nm, corresponding to ⁴I_13/2-⁴I_15/2 transition of Er³⁺ ion. The samples were annealed up to 600 °C and both photoluminescence power and fluorescence lifetime increase with post-annealing temperature and a fluorescence lifetime of 2.4 ms was achieved, yielding promising results for compact waveguide amplifiers.     

Luminescence in trivalent rare earth activated Sr4Al2O7 phosphor

In this paper we report the combustion synthesis of trivalent rare-earth (RE³⁺ = Dy, Eu and Ce) activated Sr₄Al₂O₇ phosphor. The prepared phosphors were characterized by the X-ray powder diffraction (XRD) and photoluminescence (PL) techniques. Photoluminescence emission peaks of Sr₄Al₂O₇:Dy³⁺ phosphor at 474 nm and 578 nm in the blue and yellow region of the spectrum. The prepared Eu³⁺ doped phosphors were excited by 395 nm then we found that the characteristics emission of europium ions at 615 nm (⁵D₀?⁷F₂) and 592 nm (⁵D₀?⁷F₁). Photoluminescence (PL) peaks situated at wavelengths of 363 and 378 nm in the UV region under excitation at around 326 nm in the Sr₄Al₂O₇:Ce³⁺ phosphor.     

Numerical analysis of amplification characteristics of ErxY2 − xSiO5

The gain characteristics of Er_xY_2 − xSiO₅ waveguide amplifiers have been investigated by solving rate equations and propagation equations. The gain at 1.53 μm as a function of waveguide length, Er³⁺ concentration and pump power is studied pumping at three different wavelengths of 654 nm, 980 nm and 1480 nm, respectively. The optimum Er³⁺ concentrations of 1 × 10²¹ cm^− 3-2 × 10²¹ cm^− 3 with the high gain are obtained for all three pump wavelengths. Pumping at 654 nm wavelength is shown to be the most efficient one due to weak cooperative upconversion. A maximum 16 dB gain at 1 mm waveguide length under a 30 mW pump with Er³⁺ concentration of 1 × 10²¹ cm^− 3 is demonstrated pumping at 654 nm wavelength.     

Well-confined Yb:GdVO4 laser waveguide formed by MeV C ion implantation

The planar waveguide in x-cut Yb:GdVO₄ crystal has been fabricated by 6.0 MeV carbon ion implantation with the fluence of 1 × 10¹⁴ ions/cm² at room temperature. The modes of the waveguide were measured by the prism-coupling method with the wavelength of 633 nm and 1539 nm, respectively. An enhanced ordinary refractive index region was formed with a width of about 4.0 μm beneath the sample surface to act as a waveguide structure. By performing a modal analysis on the observed transverse magnetic polarized modes, it was found that all the transverse magnetic polarized modes can be well-confined inside the waveguide. Strong Yb-related photoluminescence in Yb:GdVO₄ waveguide has been observed at room temperature, which reveals that it exhibits possible applications for integrated active photonic devices.     

Growth, thermal and spectroscopic characterizations of BaNd2(MoO4)4 crystal

A new crystal, BaNd₂(MoO₄)₄, has been grown from the flux melt based on Li₂Mo₃O₁₀ by a spontaneous nucleation method. The phase structure of the obtained crystals was determined by X-ray powder diffraction. The result shows that the as-grown crystals are well crystallized and indexed in a monoclinic crystal system with space group B2/b. The specific heat of BaNd₂(MoO₄)₄ crystal at 20 °C is 0.485 J/g K. Absorption and fluorescence spectra were also measured at room temperature. There are several strong and broad absorption peaks from 200 to 1200 nm and three emission transition bands located at 890, 1060, and 1334 nm are detected.     

Optimization of optical parametric chirped pulse amplification with different pump wavelengths

Optical parametric chirped pulse amplification with different pump wavelengths was investigated using LBO crystal, at signal central wavelength of 800 nm. According to our theoretical simulation, when pump wavelength is 492.5 nm, there is a maximal gain bandwidth of 190 nm centered at 805 nm in optimal noncollinear angle using LBO. Presently, pump wavelength of 492.5 nm can be obtained from second harmonic generation of a Yb:Sr₅(PO₄)₃F laser. The broad gain bandwidth can completely support ∼6 fs with a spectral centre of seed pulse at 800 nm. The deviation from optimal noncollinear angle can be compensated by accurately tuning crystal angle for phase matching. The gain spectrum with pump wavelength of 492.5 nm is much better than those with pump wavelengths of 400, 526.5 and 532 nm, at signal centre of 800 nm.     

Diode-pumped Nd:YVO4-Nd:CNGG crystals blue laser at 462 nm by intracavity sum-frequency-mixing

We report a laser architecture to obtain continuous-wave (cw) blue radiation at 462 nm. A 808 nm diode-pumped the Nd:YVO₄ crystal emitting at 914 nm. A part of the pump power was then absorbed by the Nd:YVO₄ crystal. The remaining was used to pump the Nd:CNGG crystal emitting at 935 nm. Intracavity sum-frequency mixing at 914 and 935 nm was then realized in a LiB₃O₅ (LBO) crystal to reach the blue radiation. We obtained a continuous-wave output power of 892 mW at 462 nm with a pump laser diode emitting 18.4 W at 808 nm.     

Optical spectroscopy of heavily Ho-doped BaY2F8 crystals

The ultraviolet, visible, and near IR (0.8-2.4 μm) luminescence spectra of BaY₂F₈ single crystals heavily doped with Ho³⁺ ions (10 and 30 mol%) have been investigated at room temperature and 12 K, together with the luminescence decay curves (up to 300 μs) of the visible emission. Excitation in the visible region gives rise to very strong emission bands originating from the first ⁵I₇ level and located around 2070 nm. However the ⁵I₇ emission is not observed upon excitation at wavelengths shorter than 300 nm. The inter-ionic processes are found to shorten the decay times of the levels emitting in the visible region with respect to the corresponding radiative lifetimes.     

Studies on the origins of the absorption spectra in PbWO4 crystal

The electronic structures and absorption spectra for both the perfect PbWO₄ (PWO) crystal and the three types of PWO crystals, containing V_Pb²⁻, V_O²⁺ and a pair of V_Pb²⁻-V_O²⁺, respectively, have been calculated using CASTEP codes with the lattice structure optimized. The calculated absorption spectra indicate that the perfect PWO crystal does not occur absorption band in the visible and near-ultraviolet region. The absorption spectra of the PWO crystal containing V_Pb²⁻ exhibit seven peaks located at 1.72 eV (720 nm), 2.16 eV (570 nm), 2.81 eV (440 nm), 3.01 eV (410 nm), 3.36 eV (365 nm), 3.70 eV (335 nm) and 4.0 eV (310 nm), respectively. The absorption spectra of the PWO crystal containing V_O²⁺ occur two peaks located at 370 nm and 420 nm. The PWO crystal containing a pair of V_Pb²⁻-V_O²⁺ does not occur absorption band in the visible and near-ultraviolet region. This leads to the conclusions that the 370 and 420 nm absorption bands are related to the existence of both V_Pb²⁻ and V_O²⁺ in the PWO crystal and the other absorption bands are related to the existence of the V_Pb²⁻ in the PWO crystal. The existence of the pair of V_Pb²⁻-V_O²⁺ has no visible effects on the optical properties. The calculated polarized optical properties are well consistent with the experimental results.     

Photoluminescence studies of red-emitting NaEu(WO4)2 as a near-UV or blue convertible phosphor

Sodium europium double tungstate [NaEu(WO₄)₂] phosphor was prepared by the solid-state reaction method. Its crystal structure, photoluminescence properties and thermal quenching characteristics were investigated aiming at the potential application in the field of white light-emitting diodes (LEDs). The influences of Sm doping on the photoluminescence properties of this phosphor were also studied. It is found that this phosphor can be effectively excited by 394 or 464 nm light, which nicely match the output wavelengths of near-ultraviolet (UV) or blue LED chips. Under 394 or 464 nm light excitation, this phosphor exhibits stronger emission intensity than the Y₂O₂S:Eu³⁺ or Eu²⁺-activated sulfide phosphor. The introduction of Sm³⁺ ions can broaden the excitation peaks at 394 and 464 nm of the NaEu(WO₄)₂ phosphor and significantly enhance its relative luminance under 400 and 460 nm LEDs excitation. Furthermore, the relative luminance of NaEu(WO₄)₂ phosphor shows a superior thermal stability compared with the commercially used sulfide or oxysulfide phosphor, and make it a promising red phosphor for solid-state lighting devices based on near-UV or blue LED chips.     

Anisotropy of second-order nonlinear optical susceptibilities of arsenic triiodide-sulfur addition complex: AsI3 · 3S8

We report the anisotropic linear and second-order nonlinear optical (NLO) properties of arsenic triiodide-octa-sulfur (1:3) adduct, AsI₃ · 3S₈, which spontaneously crystallizes in the trigonal rhombohedral non-centrosymmetric space group R3m. The trigonal symmetry of the AsI₃ · 3S₈ molecule coincides with the crystal symmetry. The crystals are optically uniaxial with n_o/n_e of about 1.2 and show dichroism at the UV-visible wavelengths. Second harmonic generation (SHG) tensor elements were determined from Maker fringes measured with an Nd:YAG laser (∼10 ns pulse, 1064 nm). The coefficient d_222,eff = 32.0 pm/V for the light polarized parallel to the layers of iodine and sulfur atoms in the AsI₃ · 3S₈ crystal ab plane is markedly larger than d₃₃₃ = 11.6 pm/V for the polarization of light parallel to the crystal c axis. The anisotropy parameter, defined as the d_222,eff/d₃₃₃ ratio, is about 2.7 for the AsI₃ · 3S₈ crystal, smaller than that for the isomorphous CHI₃ · 3S₈ crystal (7.3) but larger than for the SbI₃ · 3S₈ crystal (0.7). Highly anisotropic components of the first hyperpolarizability tensor of an AsI₃ · 3S₈ molecule, β, were derived from the quadratic nonlinear susceptibility tensor of the crystal.     

Structural characterization of La0.9Ba0.1MnO3/Y-ZrO2 film by X-ray diffraction

Perovskite manganite La_0.9Ba_0.1MnO₃(LBMO) films were deposited on (0 0 1)-oriented single crystal yttria-stabilized zirconia (YSZ) substrate by 90° off-axis radio frequency magnetron sputtering. The film thickness ranged from 10 nm to 100 nm. Grazing incidence X-ray diffraction technique and high resolution X-ray diffraction were applied to characterize the structure of LBMO films. The LBMO film mainly consisted of (0 0 1)-orientated grain as well as weakly textured (1 1 0)-orientated grain. The results indicated that an amorphous layer with thickness of about 4 nm was formed at the LBMO/YSZ interface. The strain in LBMO film was small and averaged to be about -0.14%. The strain in the film was not lattice mismatch-induced strain but residual strain due to the difference in thermal expansion coefficient between film and substrate.