基于SAG和QWI结合技术的电吸收调制器与可调谐DBR激光器的单片集成

报道了基于选择区域生长和量子阱混杂结合技术的电吸收调制器与可调谐DBR激光器的单片集成.集成器件显示出了良好的静态特性:阈值电流为37mA;100mA激光器增益区偏置电流下,直流输出功率为3.5mW;当使用单模光纤耦合(耦合效率15%),调制器偏压在0～-2V之间时,静态消光比大于20dB;波长调谐范围为4.4nm,覆盖了6个100GHz间隔的WDM信道.     

量子阱混杂单片集成宽可调谐激光器与半导体光放大器

采用量子阱方法集成半导体光放大器的取样光栅可调谐激光器,这在国内尚属首次.该器件波长调谐范围可达33nm,在放大器注入50mA电流时,输出光功率可达10mW,同时边模抑制比可达35dB以上.     

量子阱混杂单片集成宽可调谐激光器与半导体光放大器

采用量子阱方法集成半导体光放大器的取样光栅可调谐激光器,这在国内尚属首次.该器件波长调谐范围可达33nm,在放大器注入50mA电流时,输出光功率可达10mW,同时边模抑制比可达35dB以上.     

电吸收调制器与半导体光放大器和双波导模斑转换器的单片集成

采用选择区域生长、量子阱混杂和非对称双波导技术制作了电吸收调制器与半导体光放大器和双波导模斑转换器的单片集成器件.器件在波长1.55～1.60μm范围内,3dB带宽大于10GHz,直流消光比为25dB,插入损耗小于0dB,远场发散角为7.3°×18.0°,与单模光纤的耦合效率达3.0dB.     

量子阱混杂单片集成宽可调谐激光器与半导体光放大器(英文)

采用量子阱方法集成半导体光放大器的取样光栅可调谐激光器,这在国内尚属首次．该器件波长调谐范围可达33nm,在放大器注入50mA电流时,输出光功率可达10mW,同时边模抑制比可达35dB以上．     

单脊条形可调谐电吸收调制DFB激光器

报道了一种波长可热调谐的电吸收调制分布反馈激光器(Electroabsorptionmodulateddistributedfeedbacklaser,EML)。在激光器条形的侧面淀积一薄膜加热器,EML实现了 2 2nm的连续调谐。在调谐范围内,激光器输出功率的变化小于 3dB。采用端面有效反射率方法和耦合波理论的计算表明:采用相调制方法,可实现调谐范围达3 2nm的EML。如果热调谐与相调谐方法结合,可在较宽范围内实现波长快速调谐的EML     

电吸收调制器和DFB激光器一种改进的双有源层堆积集成方法

提出了一种改进型的双有源层堆积方法制作单片集成电吸收调制的 DFB激光器 ,报道了器件的制作过程和主要性能 ,初步结果为 :阈值电流 38m A ,激光器在 10 0 m A下出光功率 4 .5 m W左右 ,调制器消光比约 9d B(从+0 .5 V到 - 3.0 V) .对比此前国外报道的具有常规双量子阱堆层结构的器件结果 (出光功率仅 1.5 m W) ,我们制作的器件的出光功率有了明显的提高 .     

电吸收调制器和DFB激光器一种改进的双有源层堆积集成方法

提出了一种改进型的双有源层堆积方法制作单片集成电吸收调制的DFB激光器,报道了器件的制作过程和主要性能,初步结果为:阈值电流38mA,激光器在100mA下出光功率4.5mW左右,调制器消光比约9dB(从+0.5V到-3.0V).对比此前国外报道的具有常规双量子阱堆层结构的器件结果(出光功率仅1.5mW),我们制作的器件的出光功率有了明显的提高.     

使用低能离子注入导致的量子阱混杂方法制作可集成的分布式Bragg反射激光器

采用量子阱混杂的方法制作了可集成的分布式Bragg反射激光器.通过同时控制相位区和光栅区的注入电流,该激光器的波长可以准连续地调谐4.6nm.在整个调谐范围内,除了少数几个模式跳变点以外,激光器的单模特性保持良好,边模抑制比均达到了30dB以上.     

基于电吸收调制器的非相干可调谐微波光子滤波器

提出一种新的基于电吸收调制器(EAM)的非相干可调谐光子滤波器。首先通过带通滤波器滤除EAM输出的一个边带,获得单边带调制;再通过调谐EAM的偏置端,使得边带所引入的相移随着偏置电压的改变而改变,这样就可以实现一个真相移(TPS)结构;然后引入另一个非相干光源和Mach-Zender调制器(MZM),利用两路信号的延时不同实现一个基本的滤波器;最后通过调谐偏置所引入的TPS实现滤波器的宽带可调谐,而滤波器的形状可以保持不变,其中滤波器的调谐范围由偏置所引入相移的变化范围来决定。     

A Wavelength Tunable DBR Laser Integrated with an Electro-Absorption Modulator by a Combined Method of SAG and QWI

We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI.The threshold current is 37mA and the output power at 100mA gain current is 3.5mW.When coupled to a single-mode fiber with a coupling efficiency of 15%,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V.The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.     

A Four‐Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser

A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non‐return to zero operation with 12 dB extinction ratio is obtained. A four‐channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.     

Proposal and Analysis of Distributed Reflector‐Laser Diode Integrated with an Electroabsorption Modulator

A novel integrated laser, that is, a distributed reflector laser diode integrated with an electroabsorption modulator, is proposed to improve the output efficiency, single‐mode stability, and chirp. The proposed laser can be realized using the selective metalorganic vapor phase epitaxy technique (that is, control of the width of the insulating mask), and its fabrication process is almost the same as the conventional electroabsorption modulated laser (EML) process except for the asymmetric coupling coefficient structure along the cavity. For our analysis, an accurate time‐domain transfer‐matrix‐based laser model is developed. Based on this model, we perform steady‐state and large‐signal analyses. The performances of the proposed laser, such as the output power, extinction ratio, and chirp, are compared with those of the EML. Under 10‐Gbps NRZ modulation, we can obtain a 30% higher output power and about 50% lower chirp than the conventional EML. In particular, the simulation results show that the chirp provided by the proposed laser can appear to have a longer wavelength side at the leading edge of the pulse and a shorter wavelength side at the falling edge.     

An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spot-size converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology.A 1550～1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved.The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.     

单片集成探测器和电吸收调制器光逻辑门

通过在InP基上单片集成光探测器和调制器,制作了三端光逻辑门.在不同的负载电阻下,器件显示了良好的"与"门功能.对芯片进行了622MHz的动态测试;在950Ω负载条件下,只需要约7mw的控制光功率即可获得大于7dB的动态消光比.     

单片集成探测器和电吸收调制器光逻辑门

通过在InP基上单片集成光探测器和调制器,制作了三端光逻辑门.在不同的负载电阻下,器件显示了良好的"与"门功能.对芯片进行了622MHz的动态测试;在950Ω负载条件下,只需要约7mw的控制光功率即可获得大于7dB的动态消光比.     

一种实用化的高功率低噪声波长连续可调光纤激光器

报道了一种基于光纤光栅 (FBG)的高功率可调谐环形腔掺铒光纤激光器。该激光器由 980nm激光二极管(LD)抽运 ,在 15 6 2nm波段获得了线宽小于 0 0 4nm的激光输出 ,调谐范围可达 4 6nm ,输出波长复现性误差小于 0 0 8nm。由于铒光纤选择了最佳长度 ,并在光纤环路中引入两个隔离器抑制噪声 ,提高了信噪比 ,激光器输出的最大功率可达 4 2 8mW ,此时功率稳定性为± 0 0 3dB ,斜率效率为 7 3%。