Evolution of SiGe nanoclusters and micro defects in the Si1−xGex layer fabricated by two-step ion implantation and subsequent thermal annealing

The Si_1−xGe_x thin layer is fabricated by two-step Ge ion implantation into (0 0 1) silicon. The embedded SiGe nanoclusters are produced in the Si_1−xGe_x layer upon further annealing. The number and size of the nanoclusters changed due to the Ge diffusion during annealing. Micro defects around the nanoclusters are illustrated. It is revealed that the change of Si-Si phonon mode is causing by the nanoclusters and micro defects.     

Ge nanocrystals in magnetron sputtered SiO2

Structural and optical properties of Ge nanocrystals in SiO₂ films created by magnetron sputtering and heat treatment have been investigated. The formation of nanocrystals is found to be influenced by the temperature of heat treatment and the Ge concentration in the films. After heat treatment at 1000 °C nanocrystals are present throughout the film, with the exception of a region close to the surface that does not contain nanocrystals. This effect is assigned to oxidation of Ge in this part of the film. The size distribution of the nanocrystals is analyzed by transmission electron microscopy for a range of deposition and heat-treatment parameters. By analyzing the transmission electron microscopy images, it is possible to estimate the fraction of nanoclusters that are crystalline for a given set of growth parameters. This analysis shows that all the nanoclusters are created in the crystalline state. Raman spectroscopy is employed to probe the Ge–Ge bonds. In combination with transmission electron microscopy, this information can be used to distinguish between growth modes such as nucleation or Ostwald ripening. The photoluminescence spectra exhibit a strong broad line at 625 nm, the presence of which is demonstrated to correlate to the presence of Ge nanocrystals. PACS 61.46.+w; 78.55.-m; 78.67.-n     

Ge nanoclusters in PECVD-deposited glass after heat treatment and electron-beam irradiation

This paper reports the formation of Ge nanoclusters in silica glass thin films deposited by plasma-enhanced chemical vapor deposition (PECVD). We studied the samples by transmission electron microscopy (TEM) and Raman spectroscopy after annealing. TEM investigation shows that the Ge nanoclusters at two areas were formed by different mechanisms. The Ge nanoclusters formed in a single row along the interface of a silicon substrate and the silica glass film by annealing during high-temperature heat treatment. Ge nanoclusters did not initially form in the bulk of the film but could be subsequently formed by the electron-beam irradiation. The interface between the silicon substrate and the silica glass film was investigated by Raman spectroscopy. The shift of the Raman peaks around 286.8 cm^-1 and 495 cm^-1 suggests that the interface is a Si_1-xGe_x alloy film and that the composition x varies along the film growth direction. PACS 81.07.Bc; 78.66.Jg; 42.65.Wi     

Visible photoluminescence of nanometer-sized SiGe/Si heterostructure fabricated by ion implantation

An innovative fabrication technique for the nanometer-sized SiGe/Si heterostructure was developed in this study. Ge was induced in Si substrate by two-step ion implantation. The spherical SiGe nanoclusters are self-assembled in the Si substrate by subsequent rapid thermal annealing at 1,100 °C. The diameter of the spherical SiGe nanoclusters is 5–7 nm. Visible photoluminescence from this nanometer-sized SiGe/Si heterostructure at room temperature was investigated. We found three peak energies of visible luminescence spectra at 1.97, 2.13, and 2.16 eV, respectively. The luminescence intensity depends on the number of the nanoclusters and will be decreased because of the micro-defects around the heterostructure, which is discussed in detail.     

Plasmonics: influence of the intermediate (or stick) layer on the efficiency of sensors

This paper reports the formation of Ge nanoclusters in a multi-layer structure consisting of alternating thin films of Ge-doped silica glass and SiGe, deposited by plasma-enhanced chemical vapor deposition (PECVD) and post annealed at 1100 °C in N₂ atmosphere. We studied the annealed samples by transmission electron microscopy (TEM) and Raman spectroscopy. As-deposited and annealed samples were analyzed by secondary ion mass spectroscopy (SIMS). TEM investigation shows that Ge nanoclusters were formed in the as-deposited SiGe layer and the SiGe layer was transformed into a silicon dioxide layer embedded with Ge nanoclusters after annealing. These nanoclusters are crystalline and varied in size. There were no clusters in the Ge-doped glass layer. Raman spectra verified the existence of crystalline Ge clusters. The positional shift of the Ge vibrational peak with the change of the focus depth indicates that the distribution of the stress applied to the Ge clusters varies with depth. SIMS measurements show clearly the dramatic O increase in the as-deposited SiGe layer after annealing. The creation of Ge nanoclusters by the combination of PECVD and annealing makes possible the application in complicated waveguide components. PACS 81.07.Bc; 78.66.Jg; 42.65.Wi     

Ellipsometry of GeO<Subscript>2</Subscript> films with Ge nanoclusters: Influence of the quantum-size effect on refractive index

Using the methods of scanning and spectral laser ellipsometry and Raman scattering spectroscopy, GeO₂ films containing Ge nanoclusters with a Ge/GeO₂ mole ratio of 1: 1 are studied. A substantial difference is found between the experimental spectral dependence of the complex permittivity of the films and the one calculated for the effective medium in the Bruggeman model. The distinction can be qualitatively explained by the influence of the quantum-size effect. With the use of theoretical models for quantitative analysis, this approach will make it possible to determine the phase composition and dimensions of the nanoclusters of germanium in a contactless way without destructing the film.     

Structural characterization of SiGe nanoclusters formed by rapid thermal annealing

This work presents the structural characterization of nanoclusters formed from a-Si:H/Ge heterostructures processed by rapid thermal annealing (RTA) at 1000 °C for annealing times varying between 30 s and 70 s. The a-Si:H layers were grown on electron cyclotron resonance (ECR) using SiH₄ and Ar precursor gases. The Ge layer was grown in an e-beam evaporation system. The structural characterizations were performed by high-resolution X-ray diffractometer (HRXRD) on grazing incidence X-ray reflection mode (GIXRR) and micro-Raman measurements. The average grain size, Ge concentration (x_Ge) and strain were estimated from Lorentzian GIXRR peak fit. The average grain size varied from 3 nm to 7.5 nm and decreased with annealing time. The x_Ge increase with annealing time and varied from 8% to 19%, approximately. The strain calculated for (1 1 1), (2 2 0) and (3 1 1) peaks at 40 s, 50 s, 60 s and 70 s annealing time suggest the geometrical changes in nanoclusters according to process time.     

Quasi-direct optical transitions in Ge nanocrystals embedded in GeO<Subscript>2</Subscript> matrix

GeO₂ films with germanium nanocrystals (NCs) were deposited from supersaturated GeO vapor with subsequent dissociation on Ge:GeO₂. The films were studied using photoluminescence (PL), Raman scattering, IRspectroscopy techniques. Ge NCs in initial film have sizes about 6–8 nm and have no visible PL signal. The broad green-red PL peak was detected in Ge:GeO₂ films after thermal annealings. According to effective mass approach, maximum of PL signal from such relatively big Ge NCs should be in IR region. The experimentally observed PL signal is presumably originated due to quasi-direct L ₁-L ₃’ optical transitions “folded” in germanium NCs. The article is published in the original.     

Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions

The results of the structural and morphological studies of Ge growth on a Si(111) surface at the initial stages of epitaxy by means of scanning tunneling microscopy and high-resolution transmission electron microscopy are presented. Epitaxy of Ge has been performed in the temperature range of 300 to 550°C under the quasi-equilibrium growth conditions and low deposition rates of 0.001–0.01 bilayers per minute. The stages of the formation and decay of the nanoclusters as a result of the redistribution of the Ge atoms into two-dimensional pseudomorphic Ge islands before the formation of the continuous wetting layer have been experimentally detected. The positions of the preferable nucleation of three-dimensional Ge islands on the wetting layer formed after the coalescence of the two-dimensional islands have been analyzed. The c2 × 8 → 7 × 7 → c2 × 8 phase transitions due to the lateral growth of the islands and the plastic relaxation of the misfit strains occur on the surface of the three-dimensional Ge islands when their strain state changes. The misfit dislocations gather at the interface and two types of steps lower than one bilayer are formed on the surface of the three-dimensional islands during the relaxation process.     

Formation mechanism of the primary faceted phase and complex eutectic structure within an undercooled Ag–Cu–Ge alloy

The solidified microstructure of bulk undercooled Ag₄₀Cu₃₀Ge₃₀ alloy consists of three parts: primary (Ge) phase, the complex structure of (Ag + Ge) and (Ag + ε ₂) pseudobinary eutectics, and (Ag + Ge + ε ₂) ternary eutectic. In comparison, the pseudobinary eutectic no longer appears in an alloy droplet solidified in a drop tube. Once the undercooling exceeds 225 K and the cooling rate is greater than 2×10³ K s⁻¹, the microstructure of the solidified droplet is totally composed of anomalous ternary eutectic. In both cases, the primary (Ge) phase exhibits various faceted growth morphologies at different undercoolings, such as columnar block, long dendrite, equiaxed dendrite and rod-like crystal. Some refined side branches grow from the equiaxed (Ge) dendritic branches composed of {111} twins, which is ascribed to the rapid epitaxial growth of (Ag + Ge) pseudobinary eutectic from the (Ge) dendritic branches. Moreover, both the primary (Ge) phase and the (Ge) phase in the (Ag + Ge) pseudobinary eutectic are effective heterogeneous nuclei for the (Ag+ε ₂) pseudobinary eutectic. As undercooling increases, the (Ge) phase in the (Ag + Ge+ε ₂) ternary eutectic transforms from faceted to non-faceted phase, while the independent nucleation and growth of the (Ag) and ε ₂ phases in the ternary eutectic displaces their previous cooperative growth. These growth kinetics transitions result in the formation of anomalous ternary eutectic.     

Phase diagram of Ge:(C,Sn)

We present the self-assembling conditions of 1C4Sn tetrahedral nanoclusters with carbon atoms in their centers in Ge:(C, Sn) in the wide temperature range as a function of the impurity contents and temperature. These conditions are the phase diagram of Ge:(C, Sn) since nanocluster occurrence and completion of self-assembling when all carbon atoms are in nanoclusters are results of the continuous phase transitions. The significant decrease of the strain energy after formation of nanoclusters is a cause of self-assembling. It is shown that the nanocluster occurrence temperature depends only on the Sn content. The impurity content conditions when all carbon atoms are in 1C4Sn nanoclusters are obtained for the temperatures up to 855 ^°C.     

Synthesis of hydrophobic gold nanoclusters: growth mechanism study,luminescence property and catalytic application

One-pot synthesis of well dispersed, size-controlled gold nanoparticles with the average size of 10–15 nm and luminescent gold nanoclusters with average size of 1.7–2.0 nm were successfully achieved by thermal decomposition of gold organometallic precursor CH₃AuPPh₃ in the presence of thiol surfactants in o-xylene. Only difference between the preparations of two types of Au nanoparticles is the amount of thiol surfactant employed. The mechanistic study of formation of gold nanoparticles was carried out by analyzing the samples at different reaction time intervals and revealed that two-staged growth process was involved. The nanoclusters showed strong red emission with the maximum intensity at about 600 nm. The maximum room temperature photoluminescence quantum yield was measured as 1.2%. The catalytic ability of the Au nanoclusters to promote Suzuki–Miyaura coupling involving the C–C bond formation was also investigated.     

Binding of electron states in multilayer strained Ge/Si heterostructures with type-II quantum dots

Mechanical strains in a multilayer Ge/Si(001) heterostructure with vertically aligned Ge nanoclusters (quantum dots) are calculated using an interatomic potential based on the Keating valence-force-field model. It is found that the nonuniform spatial elastic strain distribution in this medium gives rise to a three-dimensional potential well for electrons in the strained Si layers near Ge nanoclusters. The depth of the potential well reaches 100 meV, and its spatial dimensions are determined by the diameter of the Ge nanoclusters. For a structure consisting of four Ge islands 23 nm in diameter arranged one above another, the electron binding energies in this well and the spatial electron density distribution are determined. The ground state has an s-like symmetry and is characterized by an electron binding energy of ～95 and ～60 meV for the elemental composition of Ge in the nanoclusters c = 1 and c = 0.7, respectively. The existence of bound electron states in the conduction band of strained Si must lead to a relaxation of the selection rules that determine the low efficiency of the radiative recombination in indirect-gap semiconductors. This explains the high value of the oscillator strength observed for the interband transitions in multilayer Ge/Si(001) structures with vertical correlation of the arrangement of Ge nanoclusters.     

Microstructural,chemical bonding,stress development and charge storage characteristics of Ge nanocrystals embedded in hafnium oxide

We have grown Ge nanocrystals (NCs) (4.0–9.0 nm in diameter) embedded in high-k HfO₂ matrix for applications in floating gate memory devices. X-ray photoelectron spectroscopy has been used to probe the local chemical bonding of Ge NCs. The analysis of Ge–Ge phonon vibration using Raman spectroscopy has shown the formation of compressively stressed Ge NCs in HfO₂ matrix. Frequency dependent electrical properties of HfO₂/Ge-NCs in HfO₂/HfO₂ sandwich structures have been studied. An anticlockwise hysteresis in the capacitance–voltage characteristics suggests electron injection and trapping in embedded Ge NCs. The role of interface states and deep traps in the devices has been thoroughly examined and has been shown to be negligible on the overall device performance.     

Ge dots on Si (1 1 1) and (1 0 0) surfaces with SiO2 coverage: Raman study

Germanium quantum dots formed on Si (1 1 1) and (1 0 0)-oriented surfaces coated with ultra-thin oxide layers are studied using Raman spectroscopy technique. Some structural properties (height, stoichiometry and mechanical stresses) of the dots were estimated from Raman data. For analysis of the experimental data, the Raman spectra of Ge nanoclusters containing some hundreds of Ge atoms were calculated numerically. The effects of the resonance enhancement of the intensity of Raman scattering in the Ge-nanoclusters–SiO₂–Si system were discussed. The influence of the lateral sizes of Ge nano-clusters on the frequencies of phonons localized in them was studied using numerical simulation. The influence of multi-layer growth on the structure of the Ge quantum dots was investigated.     

Subthreshold photoemission from copper nanoclusters on the SiO2 surface

Subthreshold photoemission from copper nanoclusters formed on the SiO₂ surface has been observed under irradiation of the surface by photons in the 3.1–6.5-eV energy range. The average size of copper nanoclusters on the silicon oxide surface is 250–500 nm. Besides the conventional photoemission from the filled Shockley surface state (SS), strong photoemission has been recorded at incident photon energies of 0.5 eV below the work function of the copper surface. This emission is assumed to be generated in direct electron transitions from the SS state to the unfilled electron surface states formed by the Coulomb image potential, followed by escape from these states into vacuum.     

Origin of unusual work function change upon forming Tl nanoclusters on Si(111)-7x7 surface

We report an unusual behavior of the work function that remains unchanged while increasing the coverage (θ) of thallium (Tl) nanoclusters regularly arranged on a Si(111)-7×7 surface. Such a constant work function with increasing θ is understood in terms of a θ-dependent inter-cluster interaction that cancels the change induced by dipoles due to Tl nanoclusters. The spectral changes of Si 2p and Tl 5d_5/2 core-levels as a function of θ strongly indicates the presence of such an inter-clusters interaction, which is further supported by our theoretical calculation revealing a significant charge redistribution. PACS 73.20.-r; 73.30.+y; 68.47.Fg; 79.60.-i; 73.20.Hb     

Synthesis and properties of Si and Ge nanoclusters produced by pulsed laser ablation

We show that conventional pulsed laser ablation (PLA) of Si and Ge targets in inert buffer gases is an efficient method of nanocluster synthesis. From a photoluminescence study of Si and Ge nanoclusters produced by PLA we have demonstrated the possibility of tuning the luminescence band from the near infrared to the near ultraviolet regions. The stabilization of the properties of Si nanoclusters by reactive (H₂ gas) PLA synthesis was proved by photoluminescence measurements. Finally, we report a photoluminescence study of gas-suspended Ge nanoclusters during their preparation. They exhibit a broad luminescence spectrum extended from UV to the blue-green region and modulated by a molecule-like structure. We propose an interpretation of the vibronic structure involving Ge-O-Ge vibrations at the surface of photo-excited clusters. To the best of our knowledge, we report here the first observation of vibrational effects from gas-suspended Ge nanoclusters.     

Luminescence of amorphous silicon nanoclusters

Films of amorphous silicon suboxide α-SiO _x containing amorphous silicon nanoclusters have been grown by direct current magnetron sputtering. It has been found that two radiation bands are observed in the photoluminescence spectra of relatively large amorphous nanoclusters (a size of ∼2 nm) unlike one photoluminescence band of silicon nanocrystals of the same size. The form of the spectra upon the change in the nanocluster sizes agrees with that predicted in theoretical works, in which the energy spectrum of amorphous nanoclusters has been calculated taking into account quantum confinement of delocalized, weakly localized, and strongly localized states.     

Evolution of the electronic properties of transition metal nanoclusters on graphite surface

The electronic properties of nanoclusters of transition (Ni, Co, Cr) and noble (Au, Cu) metals deposited on the surface of highly oriented pyrolytic graphite (HOPG) are studied using the method of X-ray photoelectron spectroscopy. The laws of variation of a change ΔE _b in the binding energies of core-level electrons in the initial (ΔE _i) and final (ΔE _f) states of atoms in nanoclusters, the intrinsic widths γ of photoelectron lines, and their singularity indices α as functions of the metal cluster size d are determined. A qualitative difference in behavior of the ΔE _i(d) and α(d) values in metals of the two groups (Ni, Cr versus Co, Cu) is found. The values of the final-state energy (ΔE _f < 0) and the line width (Δγ > 0) in the clusters of all metals studied vary in a similar manner. It is shown that a significant contribution to E _i is due to a transfer of the valence-shell electrons at the cluster-substrate interface, which is caused by the contact potential difference. The value of an uncompensated charge per nanocluster is determined as a function of the cluster size and the number of atoms in the cluster. The behavior of ΔE _f(d) is controlled by the Coulomb energy of a charged cluster and by a decrease in the efficiency of electron screening, which is different in the metals studied. The broadening of photoelectron lines is determined by a spread of the cluster sizes and by lower electron screening in the final Fermi system. An asymmetry of the core-level electron spectra of nanoclusters can be explained using notions about the electron-hole pair excitation near the Fermi level. The effect of the structure of the density of electron states in the d band of transition metals on the asymmetry of photoelectron lines is considered and it is concluded that this structure near the Fermi level qualitatively changes with a decrease in the nanocluster size. The obtained results indicate that the behavior of the electron subsystem of clusters of the d-metals in a size range of 2–10 nm under consideration is close to the behavior of a normal Fermi system.