第一性原理研究Li_2NH的晶格动力学和热力学性质

采用第一性原理的赝势平面波方法系统地研究了Li_2NH的电子结构、晶格动力学和热力学性质.计算得到的晶格常数与先前的理论和实验结果符合得很好.运用线性响应理论计算了整个布里渊区高对称方向上的声子色散曲线和相应的声子态密度,发现Li_2NH(Pnma)声子色散曲线没有虚频,动力学性能相对最稳定,计算结果和先前实验及理论数据符合得很好.最后,利用得到的声子态密度进一步预测了Li_2NH的热力学性质,包括晶格振动对Helmholtz自由能、内能、熵和热容的贡献,计算结果在一定程度上可为Li-N-H储氢体系的应用提供理论指导.     

Eu2+掺杂的Ca-α-SiAlON和Mg-α-SiAlON荧光粉的光学性质和电子结构

α-SiAlON是一种典型的新型硅氮氧荧光体基底材料。通过高温固相反应法合成了化学式为M0.75Eu0.05Si9.6Al2.4O0.8N15.2(M=Ca,Mg)的黄色氮氧化物荧光粉Ca-α-SiAlON:Eu2+和Mg-α-SiAlON:Eu2+。通过光致发光谱图发现,Ca0.75Eu0.05Si9.6Al2.4O0.8N15.2的发光强度比Mg0.75Eu0.05Si9.6Al2.4O0.8N15.2高得多。然后使用基于密度泛函理论的CASTEP程序,计算了两种荧光粉的能带结构和态密度。通过对态密度的分析,发现Ca的分波态密度对总态密度的贡献比Mg的大,这是因为Ca的3d能级和Eu的5d能级更接近,两者充分混合,增大了Eu的5d能带的态密度,从而解释了Ca-α-SiAlON:Eu2+的光学性能好于Mg-α-SiAlON:Eu2+的本质原因。     

Heusler合金Li_2AlX(X=Ga,In)的晶格动力学和电子特性（英文）

本文计算了 Heusler合金Li_2AlGa和Li_2AlIn的晶格参数、体积模量、体积模量的一阶导数、电子能带结构、声子色散曲线和声子态密度,并与密度泛函理论中的广义梯度近似计算结果进行比较.计算的晶格参数与文献有很好的一致性.两个Heusler合金的电子能带结构表明它们是半金属结构.并利用声子色散曲线和声子密度图研究Heusler合金晶格动力学.Li_2AlGa和Li_2AlIn Heusler合金在基态呈现动力学稳定.     

Mo2C二维材料晶格热导率的第一性原理研究

Mo₂C是构建Mxene基器件的重要材料之一,对Mo₂C二维材料声子输运的理解非常必要.文章结合第一性原理方法和声子玻尔兹曼输运方程,研究了二维Mo₂C材料的晶格热导率.研究表明,室温下二维Mo₂C导热系数非常低,其锯齿方向和扶手椅方向的晶格热导率分别为7.20和5.04 W/mK.计算了声学振动和光学振动模式对晶格热导率的贡献,揭示总热导率主要由面内声学横波的振动模式所贡献.还进一步计算了声子群速度、声子弛豫时间、三声子散射空间和模式格林艾森参数,发现二维Mo₂C中的声子群速度和声子弛豫时间对晶格传输有重要的影响.     

晶格振动模式密度研究

晶格振动模式密度(声子态密度)即单位频率间隔内的模式数,是反映声子在波矢空间分布疏密程度的物理量.为了准确地求出晶格热容量随温度的变化关系,必须用较精确的办法计算出晶格振动的模式密度,进而掌握材料的热力学性质.一般教材中对该部分的讲解晦涩难懂,本文从晶格振动的物理意义开始,分析说明并推导一维、二维、三维不同体系的晶格振动模式密度公式,进而求出德拜模型下不同体系晶格热容公式.     

二维Mo2C的晶格热导率的第一性原理研究

Mo2C是构建Mxene基器件的重要材料之一,对Mo2C二维材料声子输运的理解非常必要。文章结合第一性原理方法和声子玻尔兹曼输运方程,研究了二维Mo2C材料的晶格热导率。研究表明,室温下二维Mo2C导热系数非常低,其锯齿方向和扶手椅方向的晶格热导率分别为7.20 和 5.04 W/mK。计算了声学振动和光学振动模式对晶格热导率的贡献,揭示总热导率主要由面内声学横波的振动模式所贡献。还进一步计算了声子群速度、声子弛豫时间、三声子散射空间和模式格林艾森参数,发现二维Mo2C中的声子群速度和声子弛豫时间对晶格传输有重要的影响。     

Heusler合金Li2AlX(X=Ga，In)的晶格动力学和电子特性

本文计算了Heusler合金Li₂AlGa和Li₂AlIn的晶格参数、体积模量、体积模量的一阶导数、 电子能带结构、声子色散曲线和声子态密度,并与密度泛函理论中的广义梯度近似计算结果进行比较. 计算的晶格参数与文献有很好的一致性. 两个Heusler合金的电子能带结构表明它们是半金属结构. 并利用声子色散曲线和声子密度图研究Heusler合金晶格动力学. Li₂AlGa和Li₂AlIn Heusler合金在基态呈现动力学稳定.     

LiNH2 的晶格动力学、介电性质和热力学性质第一性原理研究

采用基于密度泛函理论的平面波赝势方法,在局域密度近似下采用线性响应的密度泛函微扰理论计算了LiNH₂的晶格动力学、介电性质和热力学性质,得到了布里渊区高对称方向上的声子色散曲线和相应的声子态密度,分析了 LiNH₂的红外和拉曼活性声子频率,同时给出它的介电张量和玻恩有效电荷张量. 研究表明,LiNH₂存在小的各向异性,计算所得结果与实验值和其他理论值符合较好.最后,利用得到的声子态密度进一步预测了LiNH₂的热力学性质 关键词： 密度泛函理论 晶格动力学 热力学性质 第一性原理计算     

LiFeAs超导体中磁性与声子软化

运用第一性原理密度泛函理论研究了铁基超导体LiFeAs的电子结构和声子谱.计算得到的LiFeAs基态具有涨落的条型反铁磁构型.通过比较LiFeAs在非磁态与条形反铁磁态下的声子态密度,发现,LiFeAs中各向异性自旋互作用的竞争产生了不稳定的自旋密度波和部分晶格位置弛豫,导致Fe和As原子振动模式的软化,从而提高电声子耦合强度.因此,自旋-声子互作用对非常规超导电性有重要贡献. 关键词： 铁基超导体 反铁磁序 超导电性 电声子耦合     

Ca4Y6Si6O25:Eu2+绿色荧光粉的发光特性

采用高温固相法合成了Ca4 Y6Si6O25:Eu2+绿色荧光材料.通过X射线衍射分析得知,Ca4Y6Si6O25属于六方晶系,具有P63/m(176)空间点群结构.测定了Eu2+的激发光谱和发射光谱.Ca4Y6Si6O25:Eu2+的激发光谱为350～450 nm的宽带谱,这与近紫外光LED芯片相匹配.发射光谱是峰值...     

First principles study on the structural,electronic and phonon properties of monolayer B2Si

Using first principles density functional theory, we predict a monolayer B₂Si structure with space group Pmm2 in the present work. This structure is confirmed to be dynamically stable. Based on the plane wave pseudopotential approach, the charge density, electron localization function, density of states, energy band, phonon property and thermal conductivity of Pmm2-B₂Si are systematically studied. It is interesting that the sp² hybridization and coordination bond of Si are found in Pmm2-B₂Si, which is the most important factor for its structural stability. The density of states and energy band analysis reveals that Pmm2-B₂Si is metallic because of the partial occupied Si 3pz and B 2pz states. Moreover, the acoustic-optical coupling is important for phonon transport in Pmm2-B₂Si, and the contribution of optical modes to the lattice thermal conductivity along the [100] and [010] directions is 13% and 12%, respectively. This study gives a fundamental understanding of the structural, electronic and phonon properties in Pmm2-B₂Si.     

Quadrupole splitting and Eu partial lattice dynamics in europium orthophosphate EuPO <Subscript>4</Subscript>

Hyperfine interactions in europium orthophosphate EuPO₄ were investigated using ¹⁵¹Eu Mössbauer spectroscopy from 6 to 300 K. The value of the quadrupole splitting and the asymmetry parameter were refined and further substantiated by nuclear forward scattering data obtained at room temperature. The temperature dependence of the relative absorption was modeled with an Eu specific Debye temperature of 221(1) K. Eu partial lattice dynamics were probed by means of nuclear inelastic scattering and the mean force constant, the Lamb-Mössbauer factor, the internal energy, the vibrational entropy, the average phonon group velocity were calculated using the extracted density of phonon states. In general, Eu specific vibrations are characterized by rather small phonon energies and contribute strongly to the total entropy of the system. Although there is no classical Debye like behavior at low vibrational energies, the average phonon group velocity can be reasonably approximated using a linear fit.     

Densities of phonon and electron states in V3Si and Cr3Si crystals

The regularization method has been used to solve the non-correct problem of finding out the phonon density of states from the temperature dependence of phonon heat capacity for two single crystals with A15 structure (the superconductor V₃Si and the non-superconductor Cr₃Si. The solution found agrees with the results of neutrongraphical and tunnel study. The electron density of states obtained in a narrow energy range near the Fermi level as the regularized solution of the reverse problem (from the temperature of the electron spin susceptibility) has at the Fermi energy the sharp maximum for V₃Si, but the flat minimum for Cr₃Si.     

Si2CN4(010)表面特性的第一性原理研究

应用第一性原理系统地研究了不同端面Si₂CN₄(010)模型的表面特性.通过3种可能表面模型解离能的比较,表明位于SiN层内的Si—NⅡ 键结合最强,而与碳二亚胺链状结构相连的Si—NⅠ 键结合最弱,因此易于形成以Si/NⅠ 键为端面的表面.文中还研究了弛豫前后表面的原子结构和电子特性,表面的NⅠ 原子容易形成新键,这是由于不饱和的NⅠ 原子在费米能级处有较高的态密度,电子结构不稳定,相反表面C原子状态较稳定,无明显的成键趋势. 关键词： 2CN₄')" href="#">Si₂CN₄ 表面 原子结构 电子结构     

Si–Si optical phonon behavior in localized Si clusters of Si<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript> alloy nanocrystals

Raman spectra acquired from Si _x Ge_1−x -nanocrystal-embedded SiO₂ films show dependence of the Si–Si optical phonon frequency on Si content. The frequency upshifts, and peak intensity increases as the silicon concentration increases. For a given Si content, the frequency remains unchanged with annealing temperature. Spectral analysis and density functional theory calculation reveal that the optical Si–Si phonon is related to the formation of localized Si clusters surrounded by Si/Ge atomic layers in the Si _x Ge_1−x nanocrystals and the intensity enhancement arises from the larger cluster size. The synergetic effect of surface tensile stress and phonon confinement determines the Si–Si optical phonon behavior.     

Eu_mSi_n(m=1～2,n=1～8)团簇结构和性质的密度泛函理论研究

在密度泛函理论的框架下,采用广义梯度近似（GGA）研究了Eu₂Si_n（n=1～7）团簇的基态几何结构,系统计算了平均结合能E_b、二阶能量差分△₂E、最高占据轨道（HOMO）与最低未占据轨道（LUMO）之间的能隙,并与已有的EuSi_n（n=2～8）团簇相关数据作对比分析.研究表明:单Eu原子比双Eu原子掺杂的Si团簇具有更高的稳定性,EuSi₃、EuSi₆、Eu₂Si₄团簇较相应邻近团簇结构稳定;Eu_mSi_n（m=1～2,n=l～8）团簇的能隙随着团簇总原子数的增加呈现振荡变化,态密度分析得到能隙振荡变化的原因是S原子的s轨道与Eu原子的p轨道发生了杂化.     

First-principles study of martensitic phase transformation of TiRh alloy

Geometric structures and atomic positions were studied with plane wave pseudo-potential method based on density functional theory for cubic, tetragonal, and monoclinic phases of TiRh alloy. Their phonon dispersion curves were obtained with frozen phonon method at harmonic approximation using density-functional perturbation theory. Our calculations revealed that both B2 and L1₀ phases are thermodynamically unstable. Jahn-Teller effect triggers the occurrence of Bain transformation from cubic to tetragonal phase, and then soft-mode phonon further leads to the transition from tetragonal to monoclinic phase on cooling. The monoclinic phase was predicted to be P2/m space group through atomic vibrational movement along [001] direction of virtual frequency modes of L1₀ phase. The temperature from B2 to L1₀ and then to P2/m were predicted to be about T=1100.53 K and T=324.48 K through free energy calculations with the electronic plus vibrational energy of formation, respectively, which is in good agreement with experimental observations.     

Surface soft phonon and the sqrt[3] x sqrt[3] <--> 3x3 phase transition in Sn/Ge(111) and Sn/Si(111)

Density functional theory calculations show that the reversible Sn/Ge(111) sqrt[3]xsqrt[3]<-->3x3 phase transition can be described in terms of a surface soft phonon. The isovalent Sn/Si(111) case does not display this transition since the sqrt[3]xsqrt[3] phase is the stable structure at low temperature, although it presents a partial softening of the 3x3 surface phonon. The rather flat energy surfaces for the atomic motion associated with this phonon mode in both cases explain the experimental similarities found at room temperature between these systems. The driving force underlying the sqrt[3]xsqrt[3]<-->3x3 phase transition is shown to be associated with the electronic energy gain due to the Sn dangling bond rehybridization.     

Raman investigations of rare‐earth arsenate single crystals

Polarized Raman spectroscopy was used to investigate the room‐temperature phonon characteristics of a series of rare‐earth arsenate (REAsO₄, RE = Sm, Eu, Gd, Tb, Dy, Ho, Tm, Yb, and Lu) single crystals. The Raman data were interpreted in a systematic manner based on the known tetragonal zircon structure of these compounds, and assignments and correlations were made for the observed bands. We found that the wavenumbers of the internal modes of the AsO₄ tetrahedron increased with increasing atomic number. This increase seems to be correlated to the contraction of the RE–O bond length. For three out of four lattice wavenumbers observed, this tendency was not nearly so marked as in the case of the internal mode wavenumber. Copyright © 2009 John Wiley & Sons, Ltd.     

Chemical and physical properties in layers and interfaces of nanolayered Si(100)/Ni/BCxNy stacks

Layered stacks of the structure Si(100)/Ni/BC_xN_y were produced by physical (Ni) and chemical (BCN) vapor deposition. The BCN layers were deposited at temperatures of 200, 300, 400, and 500 °C. The resulting samples were characterized by ellipsometry, X‐ray photoelectron spectrometry, secondary ion mass spectrometry, atomic force microscopy, and X‐ray reflectometry. The formed structures of the samples synthesized at 200 and 500 °C, respectively, were determined. For the synthesis temperature of 200 °C, compounds with Ni–C bonds were found at the interface Ni/BC_xN_y. For the sample produced at 500 °C, compounds with Ni–Si bonds were identified, dispersed as particles or droplets in the corresponding interface. Copyright © 2015 John Wiley & Sons, Ltd.