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We investigate the D0-0 mixing through the doubly Cabibbo suppressed (DCS) channel D0 →f0(980)K0 and its charge conjugate channel, in which the K0 meson is reconstructed in both K π- and KSπ0 final state. Although the decay D0 →f0(980)K* has a small branching ratio, the final state mesons are relatively easy to identify. The f0(980) meson can be replaced by the S-wave π π- state, or a longitudinally polarized vector meson ρ0. All mixing parameters, including the mass difference and decay width difference,can be extracted by studying the time-dependent decay width of these channels. We show that the method is valid in all regions for mixing parameters and it does not depend on the strong phase difference. 相似文献
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We report the progress on understanding some of those existing puzzles in charmonium decays.We show that the intermediate meson loops (IML) as a long-distance transition mechanism will provide novel insights into these issues.In particular,we show that the IML mechanism would be essentially important for understanding the ψ(3770) non-DD decays.We also comment that such a mechanism is correlated with the Okubo-Zweig-Iizuka (OZI) rule evasions in charmonium hadronic decays. 相似文献
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The study of ρ-ω mixing has mainly focused on vector meson decays with isospin I = 1, namely theρ(ω)→π+π- process. In this paper, we present a study of ρ-ω mixing in ρ(ω)→π+π-π0(I = 0) using a flavor parameterization model for the J/ψ→VP process. By fitting a theoretical framework to PDG data, we obtain the SU(3)-breaking effect parameters sV = 0.03±0.12, sP = 0.17±0.17 and the ρ-ω mixing polarization operatorΠρω =(0.006±0.011) GeV2. New values are found for the branching ratios when the mixing effect is incorporated:Br(J/ψ→ωπ0)=(3.64±0.37)×10-4, Br(J/ψ→ωη)=(1.48±0.17)×10-3, Br(J/ψ→ωη)=(1.55±0.56)×10-4, these are different from the corresponding PDG2012 values by 19%, 15% and 15%, respectively. 相似文献
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Using the QCD factorization approach, we investigate the large branching ratios of B→ηK^* decays and the SCKs anomaly of B→φKs decay in the two Higgs doublet model Ⅲ. With the contributions of flavour-changing neutral current mediated by the neutral Higgs bosons H^0, h^0 and A^0 at the tree level, we provide a coherent resolution to these anomalies within the constrained parameter spaces, which are 120 〈|λbs λss| 〈136. This will be really interesting in searching for the signs of new physics. 相似文献
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Transport models cannot simultaneously explain very recent data on pion multiplicities and pion charged ratios from central collision of Sn+Sn at 0.27 A GeV.This stimulates further investigations on the pion dispersion relation,in-medium Nπ→Δ cross sections,and Δ→Nπ decay widths near the threshold energy or at subthreshold energy of pion production in isospin asymmetric nuclear matter.In this study,the pion dispersion relation,in-medium Nπ→Δ cross section,and Δ→Nπ decay width near the threshold energy are investigated in isospin asymmetric nuclear matter by using the one-boson-exchange model.With the consideration of the energy conservation effect,the in-medium Nπ→Δ cross sections are enhanced at s1/2 <1.11 GeV in a nuclear medium.The prediction of pion multiplicity and π-/π+ ratios near the threshold energy could be modified if this effect is considered in transport model simulations. 相似文献
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二价铕离子(Eu2 )在KMgF3晶体中产生窄带线状发射,峰值位于360 nm。依据自身建立的激发态能量损耗模型,预测了4f7(6P7/2)→4f7(8S7/2)跃迁实现受激发射的可能性。采用ASE技术测得了KMgF3∶Eu2 晶体360 nm发射的光学增益,得到净光学增益系数g=(11.4±3.2)cm-1,实验证实了理论预测。晶体退火或掺杂敏化离子Gd3 或Ce3 可以改善Eu2 的增益效果。 相似文献
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研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效氧化层厚度(EOT)为1.3nm,内含原生缺陷密度较低.研究表明,由于所制备的HfN/HfO2高K栅结构具有低的原生缺陷密度,因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征,而非工艺缺陷引起的;进一步研究表明,该HfN/HfO2高K栅结构中观察到的NBTI与传统的SiO2基栅介质p-MOSFET器件中观察到的NBTI具有类似的特征,可以被所谓的反应-扩散(R-D)模型表征: HfN/HfO2栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理,即在负偏置和温度应力作用下,从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的发生,并由此产生了Si+陷阱在Si衬底界面的积累和H原子在介质层内部的扩散,这种Si+陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 相似文献
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研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效 氧化层厚度(EOT)为1.3nm,内含原生缺陷密度较低.研究表明,由于所制备的HfN/HfO2 高K栅结构具有低的原生缺陷密度,因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征,而非工艺缺陷引起的;进一步研究表明,该HfN/HfO2高K栅结构中观察到的NBTI与传统的SiO2基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征,可以被所谓的反应-扩散(R-D)模型表征: HfN/HfO2 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理,即在负 偏置和温度应力作用下,从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生,并由此产生了Si+陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ,这种Si+陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生.
关键词:
高K栅介质
负偏置-温度不稳定性(NBTI)
反应-扩散(R-D)模型 相似文献
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利用密度泛函理论B3LYP方法,在6-311G*水平上对碱金属氮化物(K3N)n(n=1,…,5)团簇各种可能构型进行几何结构优化,预测各团簇的最稳定结构,并对其成键特性、电荷分布、振动特性及稳定性进行分析研究.结果表明,随着n的增大,(K3N)n(n=1,…,5)团簇的最稳定结构逐渐由平面结构向空间立体结构转变,(K3N)4、(K3N)5团簇为类似晶体的层状结构;团簇中N原子的配位数以5、6较多见;团簇中N原子的平均自然电荷为-1.608e,K原子的平均自然电荷为+0.550e,K-N键为较强的离子键;(K3N)4团簇有相对较高的动力学稳定性. 相似文献
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Previous experimental results of (EC+β+) decay for the medium-heavy nuclei reported by our group since 1996, including 153Er, 157Yb, 209Fr, 128Ce, 130Ce, and 128Pr have been briefly summarized. The observed low-lying states in their daughter nuclei have been reviewed in a systematic way and compared with different model calculations. Finally, some questions have been put forward for further study and discussion. 相似文献
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采用高温熔融法制备出了尺寸达5 mm×3 mm×1 mm的(K0.45Na0.55)NbO3(KNN)无铅铁电晶体. XRD测试结果表明KNN晶体结构为纯的钙钛矿正交相结构,晶体的显露面为〈001〉结晶面. SEM显微结构分析表明晶体沿[001]方向呈现层状生长台阶,采用负离子配位多面体生长基元模型解释了晶体层状台阶的生长机理. 研究了晶体样品在室温至500 ℃温度范围内的介电性能,两个介电异常峰出现在240和405 ℃,分别对应正交铁电-四方铁电以及四方铁电-立方顺电相相变温度. 采用修正后的居里外斯定律研究了KNN晶体的介电弛豫特性,结果表明KNN晶体的介电弛豫特性接近于普通铁电体特征.
关键词:
0.45Na0.55)NbO3晶体')" href="#">(K0.45Na0.55)NbO3晶体
无铅
晶体结构
介电性能 相似文献
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Based on a relativistic quark model approach, the transition properties of the first nucleon resonance △(1232), and the coupling constants gπNN, g△πN are investigated. Tvo different vays to remove the center of mass motion are considered. The results of the relativistic approaches with and without center ofmass correction are compared with those of nonrelativistic constituent quark model. Moreover, pion meson cloud effect on these calculated observables is explicitly addressed. Better results are obtained by taking the pion meson cloud into account. 相似文献
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Determination of Astrophysical 13N(p,γ)^14O S-factors from the Asymptotic Normalization Coefficient of ^14C→^13C + n 下载免费PDF全文
The angular distribution of the ^13C(d,p)^14C reaction is reanalysed using the Johnson-Soper approach. The squared asymptotic normalization coefficient (ANC) of virtual decay ^14 C →^13 C^14+ n is then derived to be 21.4±5.0 fm^-1. The squared ANC and spectroscopic factor (SF) of ^14O→^13N +p are extracted to be 30.4± 7.1 fm^-1 and 1.94 ± 0.45, respectively. The astrophysical S-factors and reaction rates of ^13N(p, γ)140 are determined from the ANC of ^14O → ^13N + P using the R-matrix approach. 相似文献