超高温度系数V0.97W0.03 O2多晶薄膜的制备研究

将V₂O₅粉体与WO₃粉体均匀混合并压制成靶，用离子束增强沉积加后退火技术在SiO₂衬底上制备掺钨VO₂多晶薄膜.X射线衍射表明，薄膜取向单一，为VO₂结构的［002］相,晶格参数d比VO₂粉晶增大约0.34%；薄膜从半导体相向金属相转变的相变温度约28；室温(300 K)时的电阻-温度系数(TCR)可大于10%/K，是目前红外热成像薄膜TCR的四倍.W离子的半径大于V离子的半径，W的掺入在薄膜中引入了张应力,使薄膜相变温度降低到室温附近，是IBED V_0.97W_0.03O₂薄膜的室温电阻温度系数提高的原因. 关键词： 二氧化钒薄膜 薄膜掺杂 离子束增强沉积     

基片温度与氧分压对磁控溅射制备氧化钒薄膜的影响

采用磁控溅射工艺制备了V₂O₅薄膜.通过改变制备工艺中基片温度和氧分压两个条件，研究了薄膜的晶相组成、表观形貌以及氧化物中钒和氧元素的化合价态.当基片温度升高时，V₂O₅薄膜中颗粒结晶由细长针状转变为平行于基片的片状，V⁵⁺状态保持不变，但723 K时氧结合能向高键能态移动.氧分压较低时，薄膜表面有部分V⁴⁺态存在，但存在较多的高键能氧，此时薄膜中晶粒尺寸较小.随着氧分压的提 关键词： 氧化钒 磁控溅射 相变薄膜 X射线光电子能谱     

氧压对SrTiO3和SrNb0.2Ti0.8O3薄膜晶格参数的影响及激光感生热电电压效应

采用脉冲激光沉积技术制备了SrTiO₃和SrNb_0.2Ti_0.8O₃薄膜.X射线衍射分析表明在LaAlO₃(100)单晶平衬底上生长的SrTiO₃及SrNb_0.2Ti_0.8O₃薄膜是沿［001］取向的近外延生长.随着氧压在一定范围内逐渐增大,SrTiO₃薄膜的晶格参数减小,而SrNb_0.2Ti_0.8O₃薄膜的晶格参数先减小后增大.同时摸索出制备具有二维电子气超晶格(SrTiO₃/SrNb_0.2Ti_0.8O₃)_L的最佳氧压为1.0×10^-2Pa.另外在LaAlO₃(100)倾斜衬底上制备的SrNb_0.2Ti_0.8O₃薄膜中观察到激光感生热电电压效应. 关键词： 0.2Ti_0.8O₃薄膜')" href="#">SrNb_0.2Ti_0.8O₃薄膜 晶格参数 激光感生热电电压 脉冲激光沉积     

磁控溅射制备Y2O3-TiO2薄膜形貌的研究

室温下采用射频磁控溅射法,在硅衬底上制备了Y₂O₃-TiO₂氧化物复合薄膜.利用XRD(X-ray diffraction)和AFM( atomic force microscopy)分析观察了退火前后样品的物相、形貌等变化,讨论了致密薄膜的生长机理.实验发现,溅射功率越大,薄膜的平整度和致密度越好.对热处理前后样品的结晶结构和表面形貌的分析结果显示,在本实验参数范围内,随着溅射功率的增大,更多的Y₂O_{3关键词： 2}O₃-TiO₂薄膜')" href="#">Y₂O₃-TiO₂薄膜 表面形貌 原子力显微镜 磁控溅射     

引入籽晶层的物理溅射生长Ga2O3外延薄膜特性研究

氧化镓(Ga₂O₃)薄膜在功率器件以及紫外探测等领域中具有重要的应用潜力,而实现高质量薄膜制备则是其中的关键.本文在蓝宝石衬底上物理溅射生长外延Ga₂O₃层,因采用引入籽晶层的方法提供了人为成核点而使得外延层结晶质量获得明显改善.实验发现该外延层薄膜的生长中随着功率增加,晶粒团聚到一定尺寸后出现裂解现象.这一物理机制归因于大功率下溅射粒子在生长晶面上扩散携带的能量过大导致粒子碰撞次数增多.文中生长的外延层为(201)晶面取向的β型Ga₂O₃薄膜,厚度在202.4-292.3 nm之间,薄膜在450—800 nm范围可见光波段的透射率约为90%,吸收边随着功率的增加先蓝移后红移,带隙约为4.81—4.96 eV.光致发光光谱分析表明,该外延层薄膜在460 nm处产生蓝色发光.本文发现溅射功率为160 W时引入籽晶层生长的β-Ga₂O₃薄膜具有最佳的结晶质量,这一方法将为高质量β-Ga₂O     

氧化钒薄膜的微结构及阻变特性研究

采用射频反应溅射法于室温下在Cu/Ti/SiO₂/Si基底上制备了氧化钒薄膜. X-射线衍射、X射线光电子能谱分析仪及原子力显微镜结果表明, 室温下制备的氧化钒薄膜除微弱的V₂O₅ (101)和V₂O₃ (110)峰外, 没有明显的结晶取向, 是VO₂, V₂O₅, V₂O₃及VO的混合相薄膜, 且薄膜表面颗粒大小均匀, 表面均方根粗糙度约为1 nm. 采用半导体参数分析仪对薄膜的电开关特性进行测试. 结果表明薄膜具有较低的开关电压(V_Set<1 V, V_Reset<-0.5 V), 并且具有稳定的可逆开关特性. 薄膜从低阻态转变为高阻态的电流(I_Reset)随限流的增大而增大.通过高低阻态时I-V对数曲线的拟合(高阻态斜率>1, 低阻态斜率=1), 认为Cu离子在薄膜中扩散形成的导电细丝是该体系发生电阻转变的主要机制. 关键词： 氧化钒薄膜 电阻开关 电阻式非挥发存储器 导电细丝     

溅射制备Ta2O5薄膜的表面形貌与光学特性

在室温条件下利用溅射Ta₂O₅靶材的方法制备了Ta₂O₅薄膜,并采用将薄膜两侧的反射率光谱进行比较的简便方法分析评估薄膜的光吸收,发现溅射制备薄膜的额外光吸收源是溅射引起的缺氧形成的,选择适当的溅射功率和含氧比例的工作气体能有效地消除这些缺陷、不用任何加温处理就可制备得到表面平坦和高致密度的高品质Ta₂O₅薄膜. 关键词： 2O₅薄膜')" href="#">Ta₂O₅薄膜 光吸收 表面形貌 磁控溅射     

低电场下LiNbO3薄膜在非晶衬底上的取向生长

报道了外加低电场和衬底温度对脉冲激光淀积法制备的LiNbO₃薄膜取向的影响.在衬底温度为600℃和外加电场为7V/cm的条件下，在石英玻璃等非晶态衬底上获得了完全(001)取向的LiNbO₃薄膜.在对具有自发极化的LiNbO₃在电场作用下成核生长机制和温度对LiNbO₃自发极化强度的影响进行分析的基础上，给出了低电场诱导铁电薄膜取向生长的物理依据. 关键词：     

308nm激光作用下V2O5非晶薄膜的变异

研究了在308nm准分子激光辐照下，V₂O₅非晶薄膜性质的变化-利用X射线衍射、X射线光电子能谱及扫描电子显微镜等多种测试方法进行了分析比较，确定V₂O₅非晶薄膜性质的变化是由于高功率密度的准分子激光作用，造成V₂O₅薄膜的快速升温熔化和快速冷凝重构，使其中的氧产生缺位，引起化学配比偏离所致- 关键词：     

蓝宝石基片上制备大面积Tl2Ba2CaCu2O8超导薄膜

在2英寸双面蓝宝石基片上采用CeO₂作为缓冲层制备了高质量Tl₂Ba₂CaCu₂O₈(Tl-2212)超导薄膜.以金属铈作为溅射靶材,采用射频磁控反应溅射法生长了c轴织构的CeO₂缓冲薄膜,并研究了不同生长条件对于CeO₂缓冲层的晶体结构及表面形貌的影响.超导薄膜采用直流磁控溅射和后热处理的方法制备.扫描电子显微镜(SEM)图像显示,超     

ICP—AES同时测定钴酸锂中13个杂质元素

利用全谱直读ICP-AES分析技术,对试样处理方法、元素分析谱线、基体干扰、背景校正、仪器分析参数等进行了研究,综合确定了最佳实验条件。将钴酸锂试样用硝酸、高氯酸处理后,再用盐酸与硝酸溶解残渣,ICP-AES同时测定铜、铁、镍、锰、铂、铋、铅、金、铝、镉、钯、锡、砷等13个杂质元素。样品加标回收率为85.2%—113.0%,相对标准偏差为1.0%—7.7%。方法操作简便、快速、准确。     

The nature of empirical constants in the equation relating the frequency of the stretching vibration of oh-groups to parameters of the [MO n ]-polyhedrons coordinating these groups

Institute of Physicoorganic Chemistry, Academy of Sciences of Belarus, 220603, Minsk, Ul. Surganova, 13, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 1, pp. 104–107, January–February, 1995.     

Short-pulse Calorimetric Load for High Power Millimeter-wave Beams

A spherical compact matched load, for high vacuum operation suited for short pulses (2 MW, 0.1 s) precise measurement has been designed to test high power gyrotrons Bruschi, Gandini, Muzzini, Spinicchia, Cirant, Gittini, Granucci, Mellera, Nardone, Simonetto, and Sozzi (Fusion Eng. Des. 56–57:649–654, 2001); Bruschi, Cirant, Gandini, Granucci, Mellera, Muzzini, Nardone, Simonetto, Sozzi, and Spinicchia (Nucl. Fusion 43:1513–1519, 2003); Bruschi, Cirant, Gandini, Gittini, Granucci, Mellera, Muzzini, Nardone, Simonetto, Sozzi, Spinicchia, Angella, and Signorelli (Development of CW and short-pulse calorimetric loads for high power millimeter-wave Beams, 23rd Symposium on Fusion Technology, September 20–24, 2004, Venice, Italy). In order to enhance the power handling capability of the load and to reduce the operation problems that may arise from an excessive reflection from the load, a ray tracing code has been written to model the power distribution on the inner surface and the pattern of the reflected radiation. The outcome of this code has been used to select a more convenient profile for the spreading mirror of the load and to optimize a pre-load specially conceived to minimize the power reflected fraction.     

Effect of oxygen on the optical properties of ZnSe in the region of 0.44–20 μm

Moscow Power Engineering Institute, 14, Krasnokazarmennaya Str., Moscow, GSP, 105835, Russia. Translated from Zhurnal Prikladnois Spektroskopii, Vol. 63, No. 4, pp. 646–651, July–August, 1996.     

ICP-AES雾化法氢化法联合测定白族产妇及新生儿发中常微量元素

本文报道用ICP-AES同时测定人发中24种元素的方法。采用10mg/ml样品,4.8mol/L盐酸溶液,用基体匹配法校正干扰,分别用雾化法和氢化法测定,用人发标准检验方法和结果的准确性。较满意地测定了Zn等18种元素。91例母婴发中的Zn、Fe、Sr、Mg、Cd、P、Ni、Se、As和Mo等元素呈显著的正相关性。     

Atomic-emission spectrum analysis of soil

A method of the atomic-emission spectrum analysis of soil has been developed for control of the accumulation of technogenic impurities in environmental objects. A sample, after calcination at 550°C, is evaporated in an arc discharge. Spectra are recorded by a DFS-8 spectrograph. Simultaneously, determination is made of Li, Ba, Sr, Cu, Zn, Cr, Ni, Co, Pb, Bi, Mo, V, Ge, Ga, Y, Nb, Sn, Cd. For the majority of the elements the detection limits are lower than their percent abundance in the crust and their maximum permissible concentrations. Institute for Single Crystals, National Academy of Sciences of Ukraine, 60, Lenin Ave., Khar'kov, 310001, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 3, pp. 396–399, May–June, 1997.     

Optical properties of pure and doped Y3Fe5O12 single crystals

Institute of Physics of Solids and Semiconductors, Academy of Sciences of Belarus, 17, P. Brovka Str., GSP, Minsk, 220072. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 63, No. 4, pp. 667–675, July–August, 1996.     

Properties of zinc sulfide luminophores in thin-film structures

Ul'yanovsk State Technical University, 32, Severnyi Venets St., Ul'yanovsk, 432027, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 3, pp. 182–185, May–June, 1995.     

Recognition of practical speech emotion using improved shuffled frog leaping algorithm

Due to the drawbacks in Support Vector Machine（SVM）parameter optimization,an Improved Shuffled Frog Leaping Algorithm（Im-SFLA）was proposed,and the learning ability in practical speech emotion recognition was improved.Firstly,we introduced Simulated Annealing（SA）,Immune Vaccination（Iv）,Gaussian mutation and chaotic disturbance into the basic SFLA,which bManced the search efficiency and population diversity effectively.Secondly,Im-SFLA Was applied to the optimization of SVM parameters,and an Im-SFLA-SVM method Was proposed.Thirdly,the acoustic features of practical speech emotion,such aS ridgetiness,were analyzed.The pitch frequency,short-term energy,formant frequency and chaotic characteristics were analyzed corresponding to different emotion categories,and we constructed a 144-dimensional emotion feature vector for recognition and reduced to 4-dimension by adopting Linear Discriminant Analysis（LDA） Finally,the Im-SFLA-SVM method Was tested on the practical speech emotion database,and the recognition results were compared with Shuffled Frog Leaping Algorithm optimization-SVM（SFLA-SVM）method,Particle Swarm Optimization algorithm optimization-SVM（PSo-SVM） method,basic SVM,Gaussian Mixture Model（GMM）method and Back Propagation（BP）neural network method.The experimentM resuits showed that the average recognition rate of Im-SFLA-SVM method was 77.8%,which had improved 1.7%,2.7%,3.4%,4.7%and 7.8%respectively,compared with the other methods.The recognition of fidgetiness was significantly improve,thus verifying that Im-SFLA was an effective SVM parameter selection method,and the Im-SFLA-SVM method may significantly improve the practical speech emotion recognition.     

ICP-AES测定铜电解液中的Fe、Ni、Pb、Bi、Sb、Zn和As

利用ICP-AES分析技术,通过对样品处理、元素分析谱线、酸度等因素进行试验研究,综合确定了分析条件,对铜电解液中杂质元素（Fe、Ni、Pb、Bi、Sb、Zn、As）进行了ICP-AES测定。结果表明,ICP-AES测定铜电解液中Fe、Ni、Pb、Bi、Sb、Zn和As,可以满足铜电解生产的需要,为高纯阴极铜的生产起了指导作用。