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M. N. Solovan V. V. Brus P. D. Maryanchuk T. T. Kovalyuk J. Rappich M. Gluba 《Physics of the Solid State》2013,55(11):2234-2238
Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron sputtering are presented. It is established that the TiN thin films are polycrystalline and possess semiconductor n-type conduction. The carrier concentration is ~1022 cm?3, while electron scattering occurs at ionized titanium atoms. 相似文献
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在纯氧条件下,采用直流磁控溅射技术在单晶硅基片上沉积氧化铪(HfO2)薄膜,并研究了沉积过程中基片温度对薄膜结构和性能的影响规律。利用X射线衍射仪(XRD)和X射线能谱(XPS)表征了薄膜的晶体结构和组分,利用原子力显微镜(AFM)观察薄膜表面形貌,利用纳米力学测试系统表征了薄膜的纳米硬度和弹性模量。结果表明:磁控溅射制备的HfO2薄膜样品呈(111)择优生长,其晶粒尺寸随着基片温度的升高而增大,但其晶型并不发生转变。随着基片温度的增加,基片中的硅元素向薄膜内扩散,影响了薄膜的化学计量比。沉积薄膜的表面形貌和力学性能亦受到其结构和组分变化的影响。在200 ℃条件下制备的HfO2薄膜纯度高,O、Hf元素化学计量达到了1.99,其表面质量和力学性能均达到了最佳值,随着基片温度升高至300 ℃以上,薄膜纯度下降,表面质量和力学性能均产生劣化。 相似文献
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Yinqiao Peng Jicheng Zhou Baoxing ZhaoXiaochao Tan Zhichao Zhang 《Applied Surface Science》2011,257(9):4010-4013
Silicon carbonitride (SiCN) thin films were deposited on n-type Si (1 0 0) and glass substrates by reactive magnetron sputtering of a polycrystalline silicon target in a mixture of argon (Ar), nitrogen (N2) and acetylene (C2H2). The properties of the films were characterized by scanning electron microscope with an energy dispersive spectrometer, X-ray diffraction, Fourier transform infrared spectroscopy, X-ray photoelectron spectrometry and ultraviolet-visible spectrophotometer. The results show that the C2H2 flow rate plays an important role in the composition, structural and optical properties of the films. The films have an even surface and an amorphous structure. With the increase of C2H2 flow rate, the C content gradually increases while Si and N contents have a tendency to decrease in the SiCN films, and the optical band gap of the films monotonically decreases. The main bonds are Si-O, N-Hn, C-C, C-N, Si-N, Si-C and Si-H in the SiCN films while the chemical bonding network of Si-O, C-C, C-O, C-N, N-Si and CN is formed in the surface of the SiCN films. 相似文献
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Properties of ITO films prepared by rf magnetron sputtering 总被引:2,自引:0,他引:2
F. El Akkad A. Punnoose G. Prabu 《Applied Physics A: Materials Science & Processing》2000,71(2):157-160
Recently, a detailed study of the properties of ITO thin films deposited under various preparation conditions using the rf magnetron sputtering technique (from ITO target in pure Ar gas) has been undertaken in our laboratory. The effect of substrate temperature has been studied in a previous paper. Here the results of a study of the structural, electrical and optical properties of the ITO films with different thickness are presented. The figure of merit for the films, which is a measure of the quality of the films as transparent conductive layers for photovoltaic applications, has been evaluated. 相似文献
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Dongping Zhang Ping Fan Xingmin Cai Jianjun Huang Lili Ru Zhuanghao Zheng Guangxing Liang Yukun Huang 《Applied Physics A: Materials Science & Processing》2009,97(2):437-441
ZnO thin films were prepared by DC reactive magnetron sputtering under various values of the plasma power at room temperature.
The samples were characterized with X-ray diffraction (XRD), optical transmittance, photoluminescence (PL), and atomic force
microscopy (AFM), respectively. The results show that samples change from ZnO (110) dominant crystal orientation to ZnO (002)
dominant crystal orientation with the increase of plasma power. The samples also exhibit compressive intrinsic stresses. The
coherent domain size of the film crystallite along with the root mean square (RMS) of the surface roughness increases with
the increase of the plasma power. Optical transmittance spectra reveal that all samples have excellent optical properties.
With the increase of plasma power, slight optical transmittance decreasing and fundamental absorption edge red shifting were
observed. Films prepared under higher plasma powers show weaker emission intensities, which may be related to substoichiometric
composition. 相似文献
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The local microstructure and optical and electrical properties were investigated of amorphous carbon nitride (a-CN) films deposited by reactive radio-frequency (RF) sputtering. Two series prepared in nitrogen or in a nitrogen and argon mixture were studied. The optical properties were investigated by transmittance/reflectance and photothermal deflection spectroscopies. Combined infrared measurements and Raman scattering spectroscopies were used to investigate the microstructure of a-CN films in terms of nitrogen incorporation within the films and C sp 2 content. These experiments were completed by dark electrical conductivity measurements performed in coplanar configuration in the temperature range 50–450?K. The films exhibit semiconductor behaviour and the temperature dependence suggests two types of conduction. An increase in nitrogen incorporation induces an increase with clustering of sp 2 phase replacing C=C olefinic groups with aromatic groups. 相似文献
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Jing Qi Daqiang Gao Jinhong Liu Wenge Yang Qi Wang Jinyuan Zhou Yinghu Yang Jianlin Liu 《Applied Physics A: Materials Science & Processing》2010,100(1):79-82
All Zn1−x
Er
x
O (x=0.04, 0.05, and 0.17) films deposited on glass substrates by radio-frequency reactive magnetron sputtering exhibit the mixture
of ferromagnetic and paramagnetic phases at room temperature. The estimated magnetic moment per Er ion decreases with the
increase of Er concentration. The temperature dependence of the magnetization indicates that there is no intermetallic ErZn
buried in the films. The ferromagnetism is attributed to the Er ions substitution for Zn2+ in ZnO lattices, and it can be interpreted by the bound-magnetic-polaron model. 相似文献
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J. Musil D. Hovorka M. Mišina A. J. Bell V. Studnička 《Czechoslovak Journal of Physics》1998,48(8):963-971
We investigated the structure and composition of titanium carbide thin films deposited by the reactive magnetron sputter ion
plating process as a function of deposition parameters. The films were sputtered onto unheated glass substrates by means of
an unbalanced planar d.c. magnetron equipped with a titanium target using a mixture of argon and methane. The deposition parameters
ranged from 0.05 Pa to 2 Pa for total working gas pressurep
T, from 10% to 60% (volume) for relative methane concentration in the working gas mixture, from 45 mm to 85 mm for the substrate-to-target
distanced
s-t and from −50V to −800V for the substrate biasU
S. It was found that the crystallinity of the thin films strongly decreases with increasingp
T,d
s-t andU
S. The experiments described show the conditions necessary to obtain sputter-deposited nanocrystalline titanium carbide films.
This work has been partially supported by the Grant Agency of the Czech Republic under Grant No. 106/96/K245 and by the Ministry
of Education of the Czech Republic under Grant No. VS96 059. 相似文献
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Fan YeXing-Min Cai Fu-Ping DaiShou-Yong Jing Dong-Ping ZhangPing Fan Li-Jun Liu 《Physica B: Condensed Matter》2011,406(3):516-519
Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/vis spectrophotometer, four-probe measurement and Seebeck effect measurement, etc. The samples contain Cu, In and O. The ratios of Cu to In and O to In increase with increase in O2 flow rates. The ratio of Cu to In is over 1 and this suggests that Cu is in excess. The obtained Cu-In-O thin films are very possibly made of rhombohedral In2O3 and monoclinic CuO. Transmittance of the films decreases with increase in O2 flow rate. The decrease in transmittance results from increase in Cu content in the films. The optical band gap of all the samples is estimated to be 4.1-4.4 eV, which is larger than those of In2O3 and CuO. The sheet resistance of the films decreases with increase in O2 flow rate. Conductivity of the films is a little low, due to the addition of Cu and the poor crystalline quality of the film. The conduction behavior of the films is similar to that of In2O3 and the conduction mechanism of Cu-In-O thin films is through O vacancy. 相似文献
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Silver doped indium oxide (In2−x Agx O3−y) thin films have been prepared on glass and silicon substrates at room temperature (300 K) by reactive DC magnetron sputtering technique using an alloy target of pure indium and silver (80: 20 atomic %. The magnetron power (and hence the metal atom sputter flux) is varied in the range 40-80 W. The energy dispersive analysis of X-ray (EDAX) results show that the silver content in the film decreases with increasing magnetron power. The grain size of these films is of the order of 100 nm. The resistivity of these films is in the range 10−2-10−3 Ω cm. The work function of the silver-indium oxide films (by Kelvin Probe) are in the range: 4.64-4.55 eV. The refractive index of these films (at 632.8 nm) varies in the range: 1.141-1.195. The optical band gap of indium oxide (3.75 eV) shrinks with silver doping. Calculations of the partial ionic charge (by Sanderson's theory) show that silver doping in indium oxide thin films enhance the ionicity. 相似文献
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Hexagonal SiC thin films have been deposited using radio frequency reactive magnetron sputtering technique by varying the substrate temperature and other deposition conditions. Prior to deposition surface modification of the substrate Si(1 0 0) played an important role in deposition of the hexagonal SiC structure. The effect of substrate temperature during deposition on structure, composition and surface morphology of the SiC films has been analyzed using atomic force microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry. X-ray diffraction in conventional θ-2θ mode and omega scan mode revealed that the deposited films were crystalline having 8H-SiC structure and crystallinity improved with increase of deposition temperature. The bonding order and Si-C composition within the films showed improvement with the increase of deposition temperature. The surface of thin films grew in the shape of globes and columns depending upon deposition temperature. The optical properties also showed improvement with increase of deposition temperature and the results obtained by ellipsometry reinforced the results of other techniques. 相似文献
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Cuprous oxide (Cu2O) nanocrystalline thin films were prepared on two types of substrates known as crystalline silicon and amorphous glass, by radio frequency reactive magnetron sputtering method. Scanning electron microscopy images confirmed that Cu2O particles covered the entire surface of both substrates with smoothing distribution. The root mean square surface roughness for the prepared Cu2O thin films on glass and Si (111) substrates is 4.16, and 3.36 nm, respectively. Meanwhile, X-ray diffraction results demonstrated that the two phases of Cu2O and CuO were produced on Si (111) and glass substrates. The optical bandgap of Cu2O thin films synthesised on glass substrate is 2.42 eV. Furthermore, the prepared Cu2O nanocrystalline thin films have showed low reflectance value in the visible spectrum. Metal-Semiconductor-Metal photodetector based Cu2O nanocrystalline thin films deposited onto Si (111) was fabricated using aluminium and platinum, with the current-voltage and photoresponse characteristic investigated under various applied bias voltages. The fabricated Metal-Semiconductor-Metal (M-S-M) photodetector had shown 126% sensitivity in the presence of 10 mW/cm2 of 490 nm light with 1.0 V bias, displaying 90 and 100 ms response and recovery times, respectively. These findings have demonstrated the suitability of M-S-M Cu2O photodetector as an affordable photosensor in the future. 相似文献