Structural heterogeneity in chalcogenide glass films prepared by thermal evaporation

GeSe₂ and Ge₂₈Sb₁₂Se₆₀ chalcogenide glass thin films have been deposited on single crystal silicon substrates by vacuum thermal evaporation. The surface morphology of these films has been investigated by field emission-scanning electron microscopy and atomic force microscopy, revealing heterogeneities in their microstructure consisting of granular regions ∼15–50 nm in size, which were coarser in the case of the GeSe₂ films. Typical RMS film surface roughness values were ∼0.9–1.3 nm.     

Surface morphology of spin-coated As–S–Se chalcogenide thin films

Surface morphology and roughness of amorphous spin-coated As–S–Se chalcogenide thin films were determined using atomic force microscopy. Prepared films were coated from butylamine solutions with thicknesses d ∼ 100 nm and then annealed in a vacuum furnace at 45 °C and 90 °C for 1 h for their stabilization. The root mean square surface roughness analysis of surfaces of as-deposited spin-coated As–S–Se films indicated a very smooth film surface (with R_q values 0.42–0.45 ± 0.2 nm depending on composition). The nanoscale images of as-deposited films confirmed that surface of the films is created by domains with dimensions 20–40 nm, which corresponds to diameters of clusters found in solutions. The domain character of film surfaces gradually disappeared with increasing annealing temperature while the solvent was removed from the films. Middle-infrared transmission spectra recorded a decrease of intensities of vibration bands connected to N–H (at 3367 and 3292 cm⁻¹) and C–H (at 2965, 2935 and 2880 cm⁻¹) stretching vibrations. Temperature regions of solvent evaporation T = 60–90 °C and glass transformation temperatures T_g = 135–150 °C of spin-coated As–S–Se thin films were determined using a modulated differential scanning calorimetry.     

Structural study of GexSb40−xS60 (x = 10, 20 and 30) glasses

The atomic structures of Ge–Sb–S ternary glasses have been investigated by using the neutron diffraction method. The structure factor, S(q), for Ge_xSb_40−xS₆₀ (x = 10, 20 and 30) has a first sharp diffraction peak (FSDP) at around 1.1 Å⁻¹. The oscillation in S(q) persisted up over 25 Å⁻¹ indicates that the chemical short-range order is presented in these glasses. The aspect of S(q) for Ge₁₀Sb₃₀S₆₀ is different from those for Ge₂₀Sb₂₀S₆₀ and Ge₃₀Sb₁₀S₆₀. These results show that the atomic structure changes drastically between Ge₁₀Sb₃₀S₆₀ and Ge₂₀Sb₂₀S₆₀. The short-range order of tetrahedral GeS₄ and pyramidal SbS₃ units seems to exist in the Ge_xSb_40−xS₆₀ (x = 10, 20 and 30) glasses.     

Evaluation of basic physical parameters of quaternary Ge–Sb-(S,Te) chalcogenide glasses

New quaternary chalcogenide Ge_xSb_40?xS₅₀Te₁₀ (x = 10, 20 and 27 at.%) and Ge_xSb_40?xS₅₅Te₅ (x = 20 and 27 at.%) glasses have been synthesized and the compositions have been characterized applying prompt gamma-ray activation analyses, neutron diffraction, and material density measurements. Using the experimental data, the basic physical parameters, such as average atomic volume, packing density, compactness, average coordination number, number of constrains, average heat of atomization and cohesive energy, of the synthesized glasses are evaluated and the results are discussed in a function of glass composition.     

Smallest (∼10 nm) phase-change marks in amorphous and crystalline Ge2Sb2Te5 films

Electrical nano-scale crystallization and amorphization in amorphous and crystalline Ge₂Sb₂Te₅ films have been studied using scanning probe microscopes. In scanning tunneling microscopes, the phase changes can be induced, not by tunneling currents, but by conducting currents flowing through contacted probes. In an atomic force microscope, metallic cantilevers can produce phase-change marks with minimal sizes of ∼10 nm. The crystallization and amorphization processes show different dependences upon thickness of Ge₂Sb₂Te₅ films. These features are discussed from thermo-dynamical and microscopic structural points-of-view.     

Characteristics of ITO films fabricated on glass substrates by high intensity pulsed ion beam method

Transparent conductive oxides such as indium tin oxide (ITO) are interesting materials due to their wide-band gaps, high visible light transmittance, high infrared reflectance, high electrical conductivity, hardness and chemical inertness. ITO films were fabricated on soda lime glass substrates by using high-intensity pulsed ion beam (HIPIB) technique. The as-deposited films comprised of partially crystallized In₂O₃ and after annealing at 500 °C for 1 h the film changed to polycrystalline phase. After annealing carrier concentration and Hall mobility increased while specific resistance and sheet resistance decreased quickly; and this trend was also observed when film thickness increased up to 300 nm for the post-annealed samples. Further increase in thickness of the film changed the electrical properties slightly. Atomic force microscopy (AFM) revealed that roughness decreased after 500 °C annealing for 1 h in air, except for the film of 65 nm thick. The thickness of the film which relates to the carrier concentration and mobility, degree of crystallization, size of the grain, and connections among grains in film are main factors to determine film’s electrical properties.     

Effect of the substitution of S for Se on the structure and non-linear optical properties of the glasses in the system Ge0.18Ga0.05Sb0.07S0.70−xSex

Glasses in the system Ge–Ga–Sb–S/Se have been elaborated with different S/Se ratios in order to increase the non-linear optical properties of these glasses. We report results of a systematic study examining the relationship of the physical properties to the structure of the glasses in the system Ge_0.18Ga_0.05Sb_0.07S_0.70−xSe_x with x = 0, 0.02, 0.05, 0.10, 0.20, 0.30 and 0.40 where the replacement of S by Se has been made. The non-linear refractive index has been measured using the Z-scan technique, with picosecond pulses emitted by a 10 Hz Q-switched mode-locked Nd-Yag laser at 1064 nm under conditions suitable to characterize ultrafast non-linearities. The decrease of the glass transition temperature, the increase of the non-linear refractive index and of the density with the progressive replacement of S by Se have been correlated along with the red shift of the absorption band gap, to associated structural reorganization. A corresponding progressive decrease of corner-sharing GeS_4/2 and the formation of mostly two edge-sharing Ge₂S₄S_2/2, S₃Ge–S–GeS₃ as well as mixed GeS_4−xSe_x units have been identified by Raman spectroscopy.     

EXAFS investigation on the structural environment of Tm3+ in Ge–Ga–S–CsBr glasses

The local structures around Tm³⁺ in Ge_0.25Ga_0.10S_0.65 and 0.90 (Ge_0.25Ga_0.10S_0.65) − 0.10CsBr glasses were investigated using Extended X-ray absorption fine structure (EXAFS) spectroscopy. In Ge_0.25Ga_0.10S_0.65 glass, Tm³⁺ ions are surrounded by approximately seven S ions. Addition of 10 mol% CsBr resulted in significant changes in the EXAFS spectrum of Tm³⁺ ions due to the changes in the local structure surrounding Tm³⁺ ions. The first-nearest coordination shell around Tm³⁺ ion is predominantly composed of about six Br ions in 0.90 (Ge_0.25Ga_0.10S_0.65) − 0.10CsBr glass.     

Influence of amorphous buffer layers on the crystallinity of sputter-deposited undoped ZnO films

Undoped ZnO films were deposited by radio frequency (RF) magnetron sputtering on amorphous buffer layers such as SiO_x, SiO_xN_y, and SiN_x prepared by plasma enhanced chemical vapor deposition (PECVD) for dielectric layer in thin film transistor (TFT) application. ZnO was also deposited directly on glass and quartz substrate for comparison. It was found that continuous films were formed in the thickness up to 10 nm on all buffer layers. The crystallinity of ZnO films was improved in the order on quartz>SiO_x >SiO_xN_y>glass>SiN_x according to the investigated intensities of (0 0 2) XRD peaks. The crystallite sizes of ZnO were in the order of SiO_x～glass >SiN_x. Stable XRD parameters of ZnO thin films were obtained to the thickness from 40 to 100 nm grown on SiO_x insulator for TFT application. Investigation of the ZnO thin films by atomic force microscope (AFM) revealed that grain size and roughness obtained on SiN_x were larger than those on SiO_x and glass. Hence, both nucleation and crystallinity of sputtered ZnO thin films remarkably depended on amorphous buffer layers.     

Heterophase inclusions and dissolved impurities in Ge25Sb10S65 glass

The impurity content and microhomogeneity of Ge₂₅Sb₁₀S₆₅ glass samples, prepared by direct synthesis from elements, were investigated. It was shown that the increase in temperature of synthesis of the glass-forming melt resulted in the increase of the content of impurities of H, Na, Al, Si, K, Ca and transition metals in the prepared glasses. The glasses from the melt, subjected to chemical-distillation purification, were characterized by the low content of gas-forming impurities and the increased content of Al, Si and Cl. The glasses contained heterophase impurity inclusions mainly consisting of SiO₂, and their concentration and size depended on the conditions of glass preparation. The impurity content in the purest glasses was as follows: oxygen – <0.5 ppm wt, carbon – <5 ppm wt, hydrogen – 0.1 ppm wt, Si – <1 ppm wt, transition metals – <0.25 ppm wt, heterophase impurity inclusions with sizes larger than 80 nm – <10² cm³. It was shown that heterophase impurity inclusions behaved as the centers of glass crystallization.     

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge₂Sb₂Te₅ thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10⁷ to 10³ Ω/□ at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge₂Sb₂Te₅ films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 × 10^?3 and 2.725 Ω m, sheet resistance is 3.37 × 10⁴ and 2.725 × 10⁷ Ω/□ respectively, deduced from the I–V curves that is obtained by conductive atomic force microscope (C-AFM).     

Waveguides based on Te2As3Se5 thick films for spatial interferometry

Planar waveguides were obtained by deposition of Te₂As₃Se₅ films on polished As₂S₃ glass substrates by RF-sputtering or thermal evaporation. The RF-sputtered films were porous and had a column-like structure. By contrast, the thermal evaporated films were homogeneous and dense. They were adhesive, transparent up to 18 μm and characterized by a refractive index of 2.821 ± 0.005 at 10.6 μm. M-lines measurements highlighted the existence of several guided mode lines, proving that the manufactured structures behaved as waveguides. The geometry of the film was modified by physical or reactive ion etching. Some quasi vertical ribs up to 2.11 μm in depth were etched by reactive ion etching under a CF₄/O₂ atmosphere.     

Structural study of undoped and (Mn, In)-doped SnO2 thin films grown by RF sputtering

Undoped and 5%(Mn, In)-doped SnO₂ thin films were deposited on Si(1 0 0) and Al₂O₃ (R-cut) by RF magnetron sputtering at different deposition power, sputtering gas mixture and substrate temperature. X-ray reflectivity was used to determine the films thickness (10–130 nm) and roughness (～1 nm). The combination of X-ray diffraction and Mössbauer techniques evidenced the presence of Sn⁴⁺ in an amorphous environment, for as-grown films obtained at low power and temperature, and the formation of crystalline SnO₂ for annealed films. As the deposition power, substrate temperature or O₂ proportion are increased, SnO₂ nanocrystals are formed. Epitaxial SnO₂ films are obtained on Al₂O₃ at 550 °C. The amorphous films are quite uniform but a more columnar growth is detected for increasing deposition power. No secondary phases or segregation of dopants were detected.     

Photo and thermal induced effects on (As2S3)0.85Sb0.15 amorphous thin films

Exposure with above band gap light and thermal annealing at a temperature near to glass transition temperature, of thermally evaporated amorphous (As₂S₃)_0.85Sb_0.15 thin films were found to be accompanied by structural effects, which in turn, lead to changes in the optical properties. The optical properties of thin films induced by illumination and annealing were studied by Fourier Transform Infrared spectrometry, X-ray Photoelectron Spectroscopy and Raman Spectroscopy. Photodarkening or photobleaching was observed in the film depending upon the conditions of the light exposure or annealing. These changes of the optical properties are assigned to the change of homopolar bond densities. The photodarkening in the as-prepared film was seen at low temperature (4.2 K).     

Plasma enhanced chemical vapor deposition of ZnO thin films

Zinc oxide thin films were deposited on silicon and corning-7059 glass substrates by plasma enhanced chemical vapor deposition at different substrate temperatures ranging from 36 to 400 °C and with different gas flow rates. Diethylzinc as the source precursor, H₂O as oxidizer and argon as carrier gas were used for the preparation of ZnO films. Structural and optical properties of these films were investigated using X-ray diffraction, reflection high energy electron diffraction, atomic force microscopy and photoluminescence. Highly oriented films with (0 0 2) preferred planes were obtained on silicon kept at 300 °C with 50 ml/min flow rate of diethylzinc without any post annealing. Reflection high energy electron diffraction pattern also showed the crystalline nature of these films. A textured surface with rms roughness ∼28 nm was observed by atomic force microscopy for the films deposited at 300 °C. A sharp peak at 380 nm in the PL spectra indicated the UV band-edge emission.     

Effect of tellurium deposition rate on the properties of Cu–In–Te based thin films and solar cells

To investigate the effects of tellurium (Te) deposition rate on the properties of Cu–In–Te based thin films (Cu/In=0.30–0.31), the films were grown on both bare and Mo-coated soda-lime glass substrates at 200 °C by co-evaporation using a molecular beam epitaxy system. The microstructural properties were examined by means of scanning electron microscopy and X-ray diffraction. The crystalline quality of the films was improved with increase in the deposition rate of Te, and exhibited a single CuIn₃Te₅ phase with a highly preferred (1 1 2) orientation. Te-deficient film (Te/(Cu+In)=1.07) grown with a low Te deposition rate showed a narrow bandgap of 0.99 eV at room temperature. The solar cell performance was affected by the deposition rate of Te. The best solar cell fabricated using CuIn₃Te₅ thin films grown with the highest deposition rate of Te (2.6 nm/s) yielded a total area (0.50 cm²) efficiency of 4.4% (V_oc=309 mV, J_sc=28.0 mA/cm², and FF=0.509) without light soaking.     

Controlled crystallization of GeS2–Sb2S3–CsCl glass for fabricating infrared transmitting glass-ceramics

The crystallization of selected glasses from the GeS₂–Sb₂S₃–CsCl ternary system has been studied under non-isothermal condition. The nucleation and crystal growth mechanisms have been investigated and proved to be dependant on the glass composition. It has been found that the 80GeS₂–10Sb₂S₃–10CsCl is a good candidate for controlled crystallization. The best nucleation temperature and time have been determined. Crystals of about 20–30 nm have been uniformly generated in the glass and the obtained glass-ceramics have the same transmission in the mid and far infrared transmission.     

Emission properties and local structure of Tm3+ in Ge–Ga–S–Br glass

Spectroscopic properties of Tm³⁺ in (1 − x) (Ge_0.25Ga_0.10S_0.65)–xBr (or CsBr) glasses (x = 0.0 and 0.1) were investigated. Emission properties of Tm³⁺ in 0.9(Ge_0.25Ga_0.10S_0.65)–0.1Br glass were similar to those in Ge_0.25Ga_0.10S_0.65 glass, while there was significant improvement when doped into 0.9(Ge_0.25Ga_0.10S_0.65)–0.1CsBr glass. The lifetime of the Tm³⁺:³H₄ level increased from 0.23 to 1.22 msec with 10 mol% CsBr addition. The presence of Cs⁺ facilitated the formation of [GaS_3/2Br]⁻ units by donating an electron to the Ga tetrahedron, resulting in the homogeneous distribution of Br. In this way, Tm³⁺ ions have their local environment made of Br only. When Br ions were added instead of CsBr, [GaS_(4−x)/2Br]⁻ units with x > 1 were formed and Tm³⁺ ions were surrounded by both S and Br, producing a high phonon environment.     

A concerted rational crystallization/amorphization mechanism of Ge2Sb2Te5

Reverse Monte Carlo refinements using electron diffraction data and density functional theory calculations of the local atomic structure of amorphous Ge₂Sb₂Te₅ confirm presence of a noticeable number of four-membered rings with the general Ge(Sb)TeGe(Sb)Te composition similar to the building blocks of its cubic crystalline phase. The persistence of these rings, as well as the presence of the medium range order at the scale of about 1 nm, suggests that the amorphization/crystallization transition in Ge₂Sb₂Te₅ can be modelled with a concerted rotation of the sheets of atom-squares in {1 0 0} faces of cubic subcells of the cubic crystalline phase, similar to Rubik’s cube rotation. This mechanism can produce large models of material that agree with a range of the previous experimental and theoretical studies and also with the experimental electron diffraction data.