Magnetic properties of Co-doped SnO: first-principles calculations

Based on density functional theory calculations,the electronic and magnetic properties of Co-doped SnO are investigated.It is found that the spin-polarized state,with a magnetic moment of about 1.0 μ B per Co-dopant,is more favorable in energy than the non-spin-polarized state.Moreover,the origin of the ferromagnetism in Co-doped SnO is found to be the double exchange mechanism.Our results indicate that Co-doped SnO is a possible candidate of the p-type spintronics material.     

Ferromagnetism in carbon-doped ZnO films from first-principle study

First-principle calculations based on density functional theory have been performed on the nonmagnetic 2p light element C-doped ZnO thin films. The total energies and magnetism of the system are calculated with a ten-layer slab along () direction. The results show that the C-doped ZnO thin films are ferromagnetic. A single C is preferable to occupy the subsurface site. As the concentration of C atoms increases, the ferromagnetic coupling among the dopants is more favorable, and they tend to form a cluster around the Zn atom at the film surface. The ferromagnetism is predicted to be mainly from a p-d exchange-like p-p coupling interaction and a p-d exchange hybridization. The p-p coupling interaction is the dominative mechanism.     

第一性原理研究Ir的热力学和弹性性质

基于准谐近似理论,运用第一性原理投影缀加波方法研究了Ir的热力学和弹性性质,得到Ir的声子谱、状态方程、热容、熵、焓和线膨胀系数,以及弹性常数、弹性模量、剪切模量和杨氏模量随温度的变化关系.结果表明,计算的Ir声子谱和有限的实验测量结果一致;考虑电子对体系自由能贡献后计算的热容、熵、焓和线膨胀系数与实验值符合较好;在2600 K时,Ir的电子定压热容占总定压热容的17％,因此在高温时电子对Ir定压热容的贡献是不能忽略的;理论预测的Ir室温下的弹性常数、弹性模量、剪切模量、杨氏模量和实验值测量值基本吻合,并随温度的增加而逐渐减小.     

第一性原理研究Ir的热力学和弹性性质

基于准谐近似理论,运用第一性原理投影缀加波方法研究了Ir的热力学和弹性性质,得到Ir的声子谱、状态方程、热容、熵、焓和线膨胀系数,以及弹性常数、弹性模量、剪切模量和杨氏模量随温度的变化关系. 结果表明,计算的Ir声子谱和有限的实验测量结果一致;考虑电子对体系自由能贡献后计算的热容、熵、焓和线膨胀系数与实验值符合较好;在2600K时,Ir的电子定压热容占总定压热容的17%,因此在高温时电子对Ir定压热容的贡献是不能忽略的;理论预测的Ir室温下的弹性常数、弹性模量、剪切模量、杨氏模量和实验值测量值基本吻合,并随温度的增加而逐渐减小.     

Magnetic behaviour and DCEMS study of SnO2 films implanted with 57Fe

Fe implanted SnO₂ films (5 × 10¹⁶ and 1 × 10^{17 57}Fe ions/cm²) characterized by conversion electron Mossbauer spectroscopy (CEMS) are reviewed. The substrate temperatures affect the growth of precipitated iron oxides. The Fe ion implanted film at room temperature (RT) shows no Kerr effect and no magnetic sextet in CEM spectra. The SnO₂ film implanted with ⁵⁷Fe at the substrate temperature of 300 °C show a small Kerr effect although the magnetic sextet is not observed, but post-annealing results in the disappearance of the Kerr effect. This magnetism is considered to be due to defect induced magnetism. Some samples were measured by CEMS at 15 K. SnO₂ (0.1 at %Sb and 3 at %Sb) films, implanted at 500 °C and the post-annealed samples, show RT ferromagnetism due to formation of clusters of magnetite and maghemite, respectively. The layer by layer analysis of these films within 100 nm in thickness has been done by depth sensitive CEMS (DCEMS) using a He + 5 % CH₄ gas counter. The structures and compositions of Fe implanted SnO₂ films, and the effects due to post-annealing were investigated.     

N掺杂SnO2材料光电性质的第一性原理研究

采用全电势线性缀加平面波(full potential linearized augmented plane wave method,简记为FP-LAPW)方法,基于密度泛函理论第一性原理计算分析N掺杂SnO₂材料,研究了在N替代O原子和N替代Sn原子情况下的电子态密度、电荷密度分布以及光学性质.研究表明N掺杂替代Sn较之N掺杂替代O原子的带隙要宽,都宽于SnO₂的本征带隙,且两种情况下N分别处于负氧化态和正氧化态,其介电函数谱也与带隙对应发生蓝移,从理论上指出     

Co和Mn共掺杂ZnO电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的总体能量平面波超软赝势方法,结合广义梯度近似,对未掺杂ZnO与Co和Mn共掺杂ZnO的32原子超原胞体系进行了几何结构优化,计算了纤锌矿结构ZnO与Co和Mn共掺杂ZnO的能带结构、电子态密度和光学性质,并进行了详细的分析.计算结果表明,相对于未掺杂ZnO,Co和Mn共掺杂ZnO的禁带宽度有所减小,对紫外-可见光的吸收能力明显增强. 关键词： ZnO 第一性原理 电子结构 光学性质     

宽禁带半导体材料CuYO2的第一性原理研究

本文利用基于第一性原理的广义梯度近似方法分析研究宽禁带半导体材料CuYO₂能带结构、晶格常数和态密度.计算结果表明,CuYO₂的价带区主要由Cu的3d态和O的2p态构成,而导带区主要由Y的3d态组成.在进行+U修正之后,随着U参量的增加,CuYO₂的价带区和导带区发生分裂,导带区中Y的3d主峰向高能区移动导致导带扩大,带隙也随之扩大,当U取值为3 eV时导带底由L点转变为T点,表明+U计算主要修正CuY₂导带从而能较好的改进理论带隙值.     

宽禁带半导体材料CuYO2的第一性原理研究

本文利用基于第一性原理的广义梯度近似方法分析研究宽禁带半导体材料CuYO2能带结构、晶格常数和态密度。计算结果表明,CuYO2的价带区主要由Cu的3d态和O的2p态构成,而导带区主要由Y的3d态组成。在进行+U修正之后,随着U参量的增加,CuYO2的价带区和导带区发生分裂,导带区中Y的3d主峰向高能区移动导致导带扩大,带隙也随之扩大,当U取值为3eV时导带底由L点转变为Γ点,表明+U计算主要修正CuYO2导带从而能较好的改进理论带隙值。     

A first-principle study of Os-based compounds: Electronic structure and vibrational properties

The electronic structure, elastic, and phonon properties of OsM (M=Hf, Ti, Y and Zr) compounds are studied using first-principles calculations. Elastic constants of OsY and specific heat capacity of OsM (M=Hf, Ti, Y, and Zr) are reported for the first time. The predicted equilibrium lattice constants are in excellent agreement with experiment. The calculated values of bulk moduli are considerably high but are much smaller than that of Osmium, which is around 400 GPa. The phase stability of the OsM (M=Hf, Ti, Y and Zr) compounds were studied by DOS calculations and the results suggest that OsY is unstable in the B2 phase. The brittleness and ductility properties of OsM (M=Hf, Ti, Y and Zr) are determined. OsM (M=Hf, Ti, Y and Zr) compounds are predicted to be ductile materials. The electronic structure and phonon frequency curves of OsM (M=Hf, Ti, Y and Zr) compounds are obtained. The position of Fermi level of these systems was calculated and discussed in terms of the pseudo gaps. The finite and small DOS at the Fermi level 0.335, 0.375, 1.063, and 0.383 electrons/eV for OsHf, OsTi, OsY, and OsZr, respectively, suggest that OsM (M=Hf, Ti, Y and Zr) compounds are weak metals.     

Ethanol sensing properties of SnO2 thin films

Tin dioxide thin films have been deposited on alumina substrates by different methods in order to test their reliability as a breath analyser. Despite the obvious simplicity of spray pyrolysis, both the structural and electrical properties of the films thus prepared were strongly dependent to the deposition conditions. The samples exhibited poor crystallinity and porous microstructure. They were sensitive to ethanol vapour but since the resistance of the samples reached several MΩ, antimony doping was performed to fit a more convenient detection range. An alternative method was then used to prepare tin dioxyde thin films by evaporation of metallic tin followed by thermal oxidation. In this case, grain size was enhanced up to 100 nm but films remained highly porous. The ethanol sensitivity of evaporated samples was determined. In order to study more accurately the influence of microstructure on sensing ability, dense thin films were prepared using a CVD method with tetrabutyl tin as precursor. Preliminary results indicated that films with different crystallite sizes could be grown by varying the deposition temperature. Paper presented at the 2nd Euroconference on Solid State Ionics, Funchal, Madeira, Portugal, Sept. 10–16, 1995     

Determination of optical properties of SnO2 films

Summary The optical properties of conductive transparent thin films of undoped SnO₂, prepared by using magnetron supttering, were studied by measuring the transmittance and the reflectance between λ=0.25 μm and λ=3μm. The extracted optical constants are interpreted to give values of a direct band gap of the order of 4 eV and of an indirect band gap of the order of 3 eV. Typical SnO₂ films transmit ≈85% of visible light, have sheet resistanceR _∂ (100÷800) Ω_∂ and resistivities of (2.4·10⁻³÷1.8·10⁻²) Ω cm.

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Riassunto Mediante la misura dei valori di transmittanza e di riflettanza per lunghezze d'onda comprese fra 0.25 μm e 3 μm, sono state studiate le proprietà ottiche di film sottili (trasparenti e conduttivi) di SnO₂ non drogato, preparati mediante sputtering. Dai valori così ottenuti sono stati ricavati valori del gap diretto dell'ordine di 4 eV e di quello indiretto dell'ordine di 3 eV. Un film di SnO₂ presenta tipicamente valori della transmittanza intorno all'85%, per luce visibile,R _∂ intorno ai (100÷800) Ω_∂ e resistività fra 2.4·10⁻³ e 1.8·10⁻² Ω cm.

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Резюме Пзмеряя величины пропускания и отражения в области длин волн между λ=0.25 мкм и λ=3 мкм, исследуются оптические свойства проводящих прозрачных тонких пленок нелегированного SnO₂, приготовленных с помощью напыления. Из полученных оптических постоянных извлекаются значения прямой щели, порядка 4 эВ, и непрямой щели, порядка 3 эВ. Типичные пленки SnO₂ пропускают ∼85% видимого света, имеют сопротивлениеR _∂ (100÷800) Ω_∂ и удельные сопротивления в области (2.4·10⁻³÷1.8·10⁻²) Ом·см.

     

纳米晶氧化锡薄膜的接触特性

在 Ar和 O2 气体中 ,基片温度在 15 0～ 40 0℃的条件下 ,用直流磁控溅射的方法可以制备纳米晶透明导电薄膜。实验利用 TL M模型测试了纳米晶 Sn O2 透明导电薄膜的方块电阻、单位面积薄膜的接触电阻和电极与薄膜的结合力随热处理温度的变化情况     

A first-principle study of the structural and electronic properties of amorphous Cu-Zr alloys

The atomic and electronic structures of amorphous CuxZr100-x(x=36,46,50,56,64) alloys were simulated using first-principle calculations within a 400-atom supercell.The pair correlation function,coordination numbers,local cluster structures and electronic density of states were analyzed.Reasonable agreements between the theory and the experiments were obtained.The amorphous alloys exhibit different local cluster structures and can all be explained with cluster formulas [cluster](glue)1,3,where the clusters a...     

第一性原理研究钨掺杂对锐钛矿物性的影响

在实验上, W掺杂量在0.02083–0.04167的范围内时, 有关掺杂体系的电导率影响的研究有两种相悖的结论. 为解决这个问题, 本文采用第一性原理平面波模守恒赝势方法, 首先构建了两种Ti_0.97917W_0.02083O₂ 和Ti_0.95833W_0.04167O₂ 超胞模型, 分别对这两种模型进行了几何结构优化、能带结构分布和态密度分布计算. 同时还计算了掺杂体系的电子浓度、有效质量、迁移率和电导率. 计算结果表明, 在电子自旋极化或电子非自旋极化的条件下, W掺杂浓度越大、掺杂体系的电子浓度越大、有效质量越小、迁移率越小、电导率越大、导电性能越强. 由电离能和Bohr半径分析进一步证实了Ti_0.95833W_0.04167O₂ 超胞的导电性能优于Ti_0.97917W_0.02083O₂ 超胞. 为了研究掺杂体系的结构稳定性和形成能, 又分别构建了Ti_0.96875W_0.03125O₂, Ti_0.9375W_0.0625O₂两种超胞模型, 几何结构优化后进行了计算, 结果表明, 在电子自旋极化或电子非自旋极化的条件下, 在W掺杂量为0.02083–0.04167的范围内, W掺杂浓度越大、掺杂体系的总能量越高、稳定性越差、 形成能越大、掺杂越困难. 将掺杂体系的晶格常数与纯的锐钛矿TiO₂相比较, 发现沿a轴方向的晶格常数变大、沿c轴方向的晶格常数变小、掺杂体系的体积变大, 计算结果与实验结果相符合. 在电子自旋极化的条件下, 掺杂体系形成了半金属化的室温铁磁性稀磁半导体.     

Cu/CeO2(110)界面特性的第一性原理研究

Cu-CeO₂体系因其特殊的催化能力而在固体氧化物燃料电池和水煤气转化反应等多个催化领域有重要应用. 采用基于密度泛函理论的第一性原理方法, 在原子和电子层面上系统地研究了单个Cu原子及Cu小团簇在CeO₂(110)面上的吸附构型, 价键特性和电子结构, 结果表明: 1) 单个Cu原子的最稳定吸附位是两个表面O的桥位; 2) Cu团簇的稳定吸附构型为扭曲的四面体结构; 3) Cu原子及Cu团簇的吸附在CeO₂(110)面的gap区域引入了间隙态, 这些间隙态主要来自于Cu及其近邻的O和表层还原形成的Ce³⁺, 间隙态的出现表明Cu的吸附增强了CeO₂(110)表面的活性; 4) 吸附的单个Cu原子及Cu团簇分别被CeO₂(110)面表层的Ce⁴⁺离子氧化形成了Cu^δ+和Cu₄^δ+, 并伴随着Ce³⁺离子的形成, 这个反应可归结为Cu_x/Ce⁴⁺→Cu_x^δ+/Ce³⁺; 5) Cu团簇的吸附比Cu单原子的吸附引入了更多的Ce³⁺离子, 进而形成了更多的Cu^δ+-Ce³⁺催化活性中心. 结合已报道的Cu/CeO₂(111)界面特性, 更加全面地探明了Cu与CeO₂(111)和(110)两个较稳定低指数表面的协同作用特性, 较为系统地揭示了Cu增强CeO₂催化特性的原因及Cu与CeO₂协同作用的内在机理. 关键词： 2')" href="#">Cu/CeO₂ U')" href="#">DFT+U 吸附 电子结构     

Ni掺杂MgF2电子结构和光学性质的第一性原理研究

基于密度泛函理论(DFT) 的第一性原理平面波超软赝势方法,计算了过渡金属Ni不同比例（16.67%,12.5%,8.33%,6.25%）掺杂MgF2晶体的几何结构、电子结构和光学性质。通过对比发现,由于Ni原子的掺入, 体系的禁带宽度减小且能带中出现中间杂质带。另外, 介电函数虚部以及吸收光谱图中均出现双峰结构,结合前人的计算给出了详细的物理机制。上述现象,揭示了Ni掺杂MgF2 体系在光学元器件方面的潜在应用。     

Ni掺杂MgF2电子结构和光学性质的第一性原理研究

基于密度泛函理论(DFT) 的第一性原理平面波超软赝势方法,计算了过渡金属Ni不同比例（16.67%,12.5%,8.33%,6.25%）掺杂MgF2晶体的几何结构、电子结构和光学性质。通过对比发现,由于Ni原子的掺入, 体系的禁带宽度减小且能带中出现中间杂质带。另外, 介电函数虚部以及吸收光谱图中均出现双峰结构,结合前人的计算给出了详细的物理机制。上述现象,揭示了Ni掺杂MgF2 体系在光学元器件方面的潜在应用。     

Photoluminescence and field-emission properties of Cu-doped SnO2 nanobelts

By using a thermal evaporation and condensation method, Cu-doped SnO₂ nanobelts were synthesized on silicon substrate. High-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy studies of Cu-doped SnO₂ nanobelts demonstrate that the nanobelts are single-crystal structures and Cu is homogeneously doped into the SnO₂ lattice. X-ray diffraction further confirmed the single-phase nature of these nanobelts. The photoluminescence measurements of the nanobelts and samples annealed in oxygen were measured from 77 K to 300 K. Field-emission measurements demonstrated that the Cu-doped nanobelts possessed good performance with a turn-on field of ∼2.9 V/μm and a threshold field of ∼4.8 V/μm.