Effect of OH-content on thermal and chemical properties of SnOP2O5 glasses

Glasses with 55–60 mol% SnO and 40–45 mol% P₂O₅ have shown extremely large differences in the chemical and thermal properties depending on the temperature at which they were melted. Glasses prepared at low melting temperature, 450–550 °C, had low T_g, 150–200 °C, and low chemical stability. Glasses prepared at high melting temperature, 800–1200 °C, had much higher T_g, 250–300 °C, and much higher chemical stability. No significant differences were found by ¹¹⁹Sn Mössbauer and ³¹P Nuclear Magnetic Resonance spectroscopy. Large differences in the OH-content could be detected as the reason by infrared absorption spectroscopy, thermal analyses, and ¹H Nuclear Magnetic Resonance spectroscopy. In samples with low T_g, a broad OH – vibration band around 3000 nm with an absorption intensity >20 cm^?1, bands at 2140 nm with intensity ～5 cm^?1, at 2038 nm with intensity ～2.7 cm^?1, and at 1564 nm with intensity ～0.4 cm^?1 were measured. These samples have shown a mass loss of 3–4 wt% by thermal gravimetric analyses under argon in the temperature range 400–1000 °C. No mass loss and only one broad OH-band with a maximum at 3150 nm and low absorption intensity <4 cm^?1 could be detected in samples melted at high temperature, 1000–1200 °C, which have much higher T_g, ～300 °C, and much higher chemical stability.     

Electrical properties of A2.6+xTi1.4−xCd(PO4)3.4−x (A = Li,K; x = 0.0–1.0) phosphate glasses

Electrical properties of A_2.6+xTi_1.4−xCd(PO₄)_3.4−x (A = Li, K; x = 0.0–1.0) phosphate glasses are investigated over a frequency range from 42 Hz to 1 MHz at different temperatures. Impedance spectroscopy is used to separate the bulk conductivity from electrode effect of electrical conductivity data. The bulk dc conductivity is Arrhenius activated, with activation energies and pre-exponential factors following the Meyer–Neldel rule. The real part of ac conductivity shows universal power law feature. The variation of dielectric constant with frequency is attributed to ion diffusion and polarization occurring in the phosphate glasses. The frequency dependent imaginary part of electric modulus M″(ω) plot shows non-Debye feature in conductivity relaxation. The Kohlrausch–Williams–Watts stretched exponential function was used to describe the modulus spectra and the stretching exponent β is found to be temperature independent. Scaling in M″(ω) shows that the electrical relaxation mechanisms are independent of temperature for given composition at different temperatures.     

Photo-crystallization in a-Se imaging targets: Raman studies of competing effects

Photo-induced crystallization of a-Se is investigated by Raman spectroscopy as a function of temperature (250–340 K) and exposure time in thin-film structures used as targets in high-gain avalanche rushing photoconductor (HARP) video cameras. The Stokes-to-Antistokes ratio is monitored to obtain the local temperature T_loc at the laser spot; fluxes (632 nm) of 17 and 10 W/cm² are used. We find a rich temperature behavior that reflects the competition of changes in viscosity and strain, and defines four distinct regimes. No photo-crystallization is seen for T_loc below 260 K, nor in a 15 K range around T_g ～ 310 K. For T_loc in the regime 260–302 K the initial rate of crystal growth after onset of photo-crystallization is temperature independent, whereas for T_loc > 318 K the growth rate is thermally enhanced. Our results are in qualitative accord with a theory by Stephens treating the effects of local strain on the secondary growth of crystalline nuclei in a-Se. We conclude that the observed growth rate between 260 and 302 K is driven by local strain, and that relaxation of this strain near T_g suppresses crystal growth until thermally assisted processes accelerate the photo-crystallization at higher temperatures.     

Crystal growth kinetics in cordierite and diopside glasses in wide temperature ranges

We measured and collected literature data for the crystal growth rate, u(T), of μ-cordierite (2MgO · 2Al₂O₃ · 5SiO₂) and diopside (CaO · MgO · 2SiO₂) in their isochemical glass forming melts. The data cover exceptionally wide temperature ranges, i.e. 800–1350 °C for cordierite and 750–1378 °C for diopside. The maximum of u(T) occurs at about 1250 °C for both systems. A smooth shoulder is observed around 970 °C for μ-cordierite. Based on measured and collected viscosity data, we fitted u(T) using standard crystal growth models. For diopside, the experimental u(T) fits well to the 2D surface nucleation model and also to the screw dislocation growth mechanism. However, the screw dislocation model yields parameters of more significant physical meaning. For cordierite, these two models also describe the experimental growth rates. However, the best fittings of u(T) including the observed shoulder, were attained for a combined mechanism, assuming that the melt/crystal interface growing from screw dislocations is additionally roughened by superimposed 2D surface nucleation at large undercoolings, starting at a temperature around the shoulder. The good fittings indicate that viscosity can be used to assess the transport mechanism that determines crystal growth in these two systems, from the melting point T_m down to about T_g, with no sign of a breakdown of the Stokes–Einstein/Eyring equation.     

Effect of vacuum annealing on charge transport and trapping in a-Si1 − xCx:H/c-Si heterostructures

The processes of charge transport and trapping in amorphous Si_1 ? xC_x:H films deposited on crystalline p-type Si wafers and annealed in vacuum in the temperature range 300–650 °C have been evaluated. Current–voltage (I–V), capacitance–voltage (C–V) and admittance–temperature (G–T) characteristics were measured in the temperature range 100–350 K. The spectrum of thermal effusion of hydrogen was measured from room temperature up to 1000 °C.C–V characteristics indicate a slight increase of the dielectric constant k and a large hysteresis after annealing at 450 °C. The hysteresis is believed to be associated with mobile hydrogen effusion from the a-SiC:H film, and it is not seen after a 650 °C anneal. From I–V data the maximum rectification ratio is observed after annealing at 450 °C. Variable-range hopping (VRH) conduction at the Fermi level is found to dominate the forward current of the as-deposited structure. After annealing at 450 °C the forward current can be described by space-charge limited (SCL) mechanisms with trapping at shallow levels with energy of about 0.12 eV. After annealing at 650 °C the process of VRH conduction appears again, but the density of hopping sites is much higher than in the as-grown sample. From admittance spectra, the energy position of respective traps in a-SiC:H is at (E_V + 0.45) eV for as-deposited material and it decreases slightly after vacuum annealing. On the basis of these results, an energy band diagram of the a-Si_1 ? xC_x:H/p-Si structure annealed at 450 °C is proposed.     

The preparation and structural studies in the (80 − x)TeO2–20ZnO–(x)Er2O3 glass system

Er³⁺-doped tellurite glasses of the (80 ? x)TeO₂–20ZnO–(x)Er₂O₃ system (0.5 mol% ? x ? 2.5 mol%) have successfully been made by melt-quenching technique and their structure has been investigated by means of DTA and Raman spectroscopy. The DTA results show the thermal parameters; such as the glass transition temperature (T_g) and crystallization temperature (T_c) were determined. It is found that this system provides a stable and wide glass formation range in which the glass stability around 99–140 °C may be obtained. The Raman spectroscopy used the structural studies in the glass system. Two Raman shift peaks were observed around 640–670 cm^?1 and 720–740 cm^?1, which correspond to the stretching vibration mode of TeO₄ tbp and TeO₃ tp, respectively. It is found that the spectral shift in Raman spectra is depending on the Er₂O₃ content. This evolution is an indication of the changes in the basic unit of the glass structure.     

Preparation and characterization of amorphous cadmium–selenium ribbons

Chalcogenide glasses based on the cadmium–selenium system, with the selenium composition varying from 0 to 7.5 wt% have been prepared using melt-quenching method i.e., single-roller quenching technique. The X-ray diffraction (XRD) and selected area electron diffraction (SAD) patterns of the CdSe ribbons indicate that the ribbons are amorphous. The transmission electron microscopy (TEM) studies carried out on these ribbons reveal that the constituents are inhomogeneously distributed in these ribbons. The temperature dependence of the electrical resistivity, ρ and thermoelectric power (TEP) of these ribbons has been studied in the temperature range 30–350 °C. The sudden jump in the values of electrical resistivity at a specific temperature for each case in these ribbons has been correlated with the phase transition i.e., the onset of crystallization in these materials during heating. The crystallization temperature, T_c has been found to be a function of Se content of these ribbons. The phase change in these ribbons as a result of heating does not seem to affect the variation of TEP with temperature. However, the slope of TEP versus temperature curves depends on Se content in these ribbons. The differential scanning calorimetry (DSC) of these ribbons indicates that the supercooled region in these ribbons extends from 50 to 70 °C. The composition CdSe ribbon with 0.5 wt% Se has the highest value of T_c and glass forming ability, K_g = 0.7.     

Electrical and dielectric properties of glass system NaPO3–KHSO4

Glass samples have been prepared in the NaPO₃–KHSO₄ binary system with the classical melting, casting and annealing steps. Electrical and dielectrical properties of glass samples were studied. Measurements of DC and AC conductivity and complex electrical permittivity of xNaPO₃–(100 ? x)KHSO₄ glass system were carried out at temperatures ranging from room temperature to temperature located 15 °C below glass transition temperature T_g. Results showed that changes of NaPO₃ concentration considerably affect values of observed parameters. DC conductivity of glass increases as NaPO₃ concentration grows until concentration x = 60. However, beyond this value a sharp decrease of DC conductivity was observed. In addition relaxation times showed abrupt changes at concentration x = 60, corresponding to the lowest relaxation times at the temperature 90 °C.     

Surface morphology of spin-coated As–S–Se chalcogenide thin films

Surface morphology and roughness of amorphous spin-coated As–S–Se chalcogenide thin films were determined using atomic force microscopy. Prepared films were coated from butylamine solutions with thicknesses d ∼ 100 nm and then annealed in a vacuum furnace at 45 °C and 90 °C for 1 h for their stabilization. The root mean square surface roughness analysis of surfaces of as-deposited spin-coated As–S–Se films indicated a very smooth film surface (with R_q values 0.42–0.45 ± 0.2 nm depending on composition). The nanoscale images of as-deposited films confirmed that surface of the films is created by domains with dimensions 20–40 nm, which corresponds to diameters of clusters found in solutions. The domain character of film surfaces gradually disappeared with increasing annealing temperature while the solvent was removed from the films. Middle-infrared transmission spectra recorded a decrease of intensities of vibration bands connected to N–H (at 3367 and 3292 cm⁻¹) and C–H (at 2965, 2935 and 2880 cm⁻¹) stretching vibrations. Temperature regions of solvent evaporation T = 60–90 °C and glass transformation temperatures T_g = 135–150 °C of spin-coated As–S–Se thin films were determined using a modulated differential scanning calorimetry.     

Melting enthalpy ΔHm for describing glass forming ability of bulk metallic glasses

A new melting enthalpy ΔH_m criterion for the prediction of glass forming ability (GFA) of alloys is proposed and five Zr–Al–Ni–Cu bulk metallic glasses (BMG) with critical dimension Z_max up to ? 7.5 mm are also developed by us in the light of the optimum ΔH_m of Zr–Al–Ni–Cu alloy system. And then, we researched the relationships between ΔH_m and two GFA parameters (critical cooling rate R_c and Z_max) of five bulk metallic glass (BMG) systems, such as Mg–Ni–Nd, Pd–Cu–Si, La–Al–Ni–Cu, Zr–Al–Ni–Cu and Zr–Ti–Ni–Cu–Be, respectively. The results show that the relationships between ΔH_m and R_c are all concave upward parabolas, and the optimum ΔH_ms for Mg–Ni–Nd, Pd–Cu–Si, Zr–Al–Ni–Cu, Zr–Ti–Ni–Cu–Be and La–Al–Ni–Cu are 10.3960 kJ mol^?1, 21.2202 kJ mol^?1, 19.7146 kJ mol^?1, 18.1455 kJ mol^?1 and 13.1558 kJ mol^?1, respectively. On the contrary, the relationships between ΔH_m and Z_max are all concave downward parabolas, and the optimum ΔH_ms for Mg–Ni–Nd, Pd–Cu–Si, Zr–Al–Ni–Cu, Zr–Ti–Ni–Cu–Be and La–Al–Ni–Cu are 10.5530 kJ mol^?1, 21.0830 kJ mol^?1, 19.6603 kJ mol^?1, 19.7231 kJ mol^?1 and 13.1173 kJ mol^?1, respectively. Furthermore, other BMGs’ R_cs or Z_maxs predicted by above-mentioned relationships satisfactorily agree with the tested results, which indicates that these relationships are reliable. However, the predicted results are reliable only if the main components are similar with the fitted BMGs or the additive is sparkle enough that the alloy’s character does not change. On the whole, the ΔH_m can act as a criterion for quickly predicting the alloy’s GFA and be helpful for the development of new BMGs.     

Solid–liquid interfacial energy of neopentylglycol solid solution in equilibrium with neopentylglycol–(D) camphor eutectic liquid

The grain boundary groove shapes for equilibrated solid neopentylglycol (NPG) solution (NPG–3 mol% D-camphor) in equilibrium with the NPG–DC eutectic liquid (NPG–36.1 mol% D-camphor) have been directly observed using a horizontal linear temperature gradient apparatus. From the observed grain boundary groove shapes, the Gibbs–Thomson coefficient (Г), solid–liquid interfacial energy (σ_SL) of NPG solid solution have been determined to be (7.5±0.7)×10^?8 K m and (8.1±1.2)×10^?3 J m^?2, respectively. The Gibbs–Thomson coefficient versus T_mΩ^1/3, where Ω is the volume per atom was also plotted by linear regression for some organic transparent materials and the average value of coefficient (τ) for nonmetallic materials was obtained to be 0.32 from graph of the Gibbs–Thomson coefficient versus T_mΩ^1/3. The grain boundary energy of solid NPG solution phase has been determined to be (14.6±2.3)×10^?3 J m^?2 from the observed grain boundary groove shapes. The ratio of thermal conductivity of equilibrated eutectic liquid to thermal conductivity of solid NPG solution was also measured to be 0.80.     

Thermal properties and glass formation in the SiO2–B2O3–Bi2O3–ZnO quaternary system

Lead-free glasses in the SiO₂–B₂O₃–Bi₂O₃–ZnO quaternary system were studied. The glass formation region, as determined by XRD patterns of bulk samples, was limited to glasses having more than 40 mol% of the glass-forming oxides SiO₂ and B₂O₃. Crystalline phases of Zn₂SiO₄ (willemite) were detected in compositions of 30SiO₂ · 10B₂O₃ · 20Bi₂O₃ · 40ZnO and 20SiO₂ · 10B₂O₃ · 25Bi₂O₃ · 45ZnO. Glass transition temperatures (T_g), dilatometric softening points (T_d) and linear coefficients of expansion in the temperatures range of 25–300 °C (α_25–300) were measured for subsystems along the B₂O₃ join of 10, 20 and 30 mol%. For these subsystems, T_g ranged from 411 to 522 °C, and T_d ranged from 453 to 563 °C, both decreasing with increasing Bi₂O₃ content. The measured α_25–300 ranged from 53 to 95 × 10⁻⁷ °C⁻¹, with values increasing with increasing Bi₂O₃ content. The ZnO content had the opposite effect to the Bi₂O₃ content. It appears that Bi³⁺ acts as a glass-modifier in this quaternary system.     

Structural and magnetic properties of nanocrystalline particles in an amorphous Fe73.5Nb3CuSi13.5B9 matrix

We report structural and magnetic properties of fine particles embedded in an amorphous magnetic matrix. As-quenched amorphous Fe_73.5Nb₃CuSi_13.5B₉ ribbons (FINEMET) were submitted to the thermal treatments of several times (1 ? t ? 240 min) at 570 °C using a conventional furnace. The analyses of the X-ray diffraction patterns at room temperature reveal that our samples consist of single phase Fe₃Si nanocrystals embedded in a residual amorphous phase. Magnetic measurements show that the saturation moment at T = 450 °C increases as a function of annealing time. This behavior is attributed to an increase of the fraction of nanocrystallites in the residual amorphous phase.     

Aging,glass transition,supercooled and equilibrium liquid states of alkali germanate glasses studied by Brillouin scattering

The elastic properties of alkali germanate glasses, xR₂O?(100 ? x)GeO₂ (R = Li, Na, K, Rb, Cs ; x = 14, 28), have been studied by Brillouin scattering in the wide temperature range up to 1200 °C. The remarkable aging effect of Brillouin shift Δν_L has been observed below a glass transition temperature T_g ≈ 500 °C. The temperature dependence of longitudinal sound velocity V_L of well annealed glasses shows the gradual decrease below T_g, while on further heating the remarkable decrease is observed above T_g. The scaled temperature dependence of V_L is nearly independent on alkali metals below the melting temperature T_m. While on further heating above T_m, the drastic decrease of V_L and increase of α_L show the remarkable alkali dependence. It may be attributed to the appearance of dynamic process related to ionic hopping of alkali metals released from glass network above T_m.     

Thermal and optical properties of TeO2–ZnO–BaO glasses

We report the results of a systematic study of the thermal and optical properties of a new family of tellurite glasses, TeO₂–ZnO–BaO (TZBa), as a function of the barium oxide mole fraction and compare them with those of TeO₂–ZnO–Na₂O (TZN). The characteristic temperatures of this new glass family (glass transition, T_g, crystallization, T_x, and melting, T_m) increase significantly with BaO content and the glasses are more thermally stable (greater ΔT = T_x ? T_g) than TZN glasses. Relative to these, Raman gain coefficient of the TZBa glasses also increases by approximately 40% as well as the Raman shift from ~ 680 cm^? 1 to ~ 770 cm^? 1. The latter shift is due to the modification of the glass with the creation of non-bridging oxygen ions in the glass network. Raman spectroscopy allows us to monitor the changes in the glass network resulting from the introduction of BaO.     

Xerographic spectroscopy of gap states in Se-rich amorphous semiconductors review

One of the most important parameters which determine the performance of many modern devices based on amorphous semiconductors is the drift mobility-lifetime product, μτ. There has been much interest in determination of charge-carrier ranges in amorphous semiconductors by various measurement techniques. Although the mobility, μ, can be measured by the conventional time-of-flight transient photoconductivity technique, the determination of the lifetime, τ, is often complicated by both experimental and theoretical limitations. The present article provides an overview of xerographic measurements as a tool for studying the electrical properties of amorphous semiconductors. First, details of the experimental set-up are discussed. Thereafter, the analysis and interpretation of dark discharge, the first cycle residual potential, cycled-up saturated residual potential are considered. It is shown that from such measurements the charge-carrier lifetime, τ, the range of the carriers, μτ, and the integrated concentration of deep traps in the mobility gap can be readily and accurately determined. Xerographic measurements on Se-rich amorphous photoconductors have indicated the presence of relatively narrow distribution of deep hole traps with integrated density of about 10¹³ cm^? 3. These states are located at ~ 0.85 eV from the valence band. A good correlation was observed between residual potential and the hole range, in agreement with the simple Warter expression. The capture radius is estimated to be r_c = 2–3 Å. Since r_c for pure a-Se and a-As_xSe_1 ? x is comparable to the Se–Se interatomic bond length in a-Se, it can be suggested that deep hole trapping centers in these chalcogenide semiconductors are neutral-looking defects, possibly of intimate valence-alternation pair (IVAP) in nature. The absence of any electron spin resonance signal (ESR) at room temperature seemed to be a strong argument in favor of this suggestion. Finally, photoinduced effects on xerographic parameters are discussed. It has been shown that photoexcitation of a-As_xSe_1 ? x amorphous films with band-gap light alters deep hole and electron states. During room-temperature annealing photosensitized states relax to equilibrium. Recovery process becomes slower with increasing As content. Qualitative explanation of the observed behavior may be based on associating the deep states with C₃⁺ and C₁^?intimate-valence-alternation–pair (IVAP) centers.     

Formation of Co2+-doped nanocrystals in La2O3–MgO–Al2O3–SiO2 glass-ceramics

Transparent glass-ceramics were synthesized by heat-treatment of glass with a composition of 5La₂O₃–13.2MgO–28.8Al₂O₃–46SiO₂–4.5TiO₂–2.5ZrO₂–0.15CoO (LMAS) (wt.%). The activation energy of crystallization and the Avrami parameter for the LMAS glass were determined from the DTA curves at different heating rates. The most two intense bands of Raman spectrum of initial glass at ~ 810 cm^?1 and ~ 900 cm^?1 were connected with the presence of [SiO₄] and [TiO₄] tetrahedral, respectively. After heat-treated at 700 °C/10 h+820 °C/8 h, the intensity of the band for [TiO₄] tetrahedral weakened, while an intensive band at ~ 800 cm^?1 for the Ti–O bond appeared. Other bands were characteristics of high-silicate network and x(MgTi₂O₅)·y(Al₂TiO₅) polycrystals. The changes reflected phase separation after heat-treatment of the initial glass. The strong absorption band of glass-ceramics centered at 580 nm can be assigned to ⁴A₂(⁴F)→⁴T₁(⁴P) and the broad absorption band at 1100–1700 nm to ⁴A₂(⁴F)→⁴T₁(⁴F) transitions of tetrahedral coordinated Co²⁺ ion. Two broad emission bands, one was around 660 nm, the other was from 800 nm to 1050 nm, of glass-ceramics correspond to the ⁴T₁(⁴P)→⁴A₂(⁴F) and ⁴T₁(⁴P)→⁴T₂(⁴F) transitions of tetrahedral coordinated Co²⁺ ions. The absorption and emission features clearly demonstrated that Co²⁺ ions were incorporated into nanocrystals and located in tetrahedral sites.     

Structural relaxation and glass transition behavior of novel (Ti33Zr33Hf33)50(Ni50Cu50)40Al10 alloy developed by equiatomic substitution

A series of glass forming alloys (Ti₃₃Zr₃₃Hf₃₃)_100−x−y(Ni₅₀Cu₅₀)_xAl_y (x = 20–70 at.% and y = 0–30 at.%) have been developed by equiatomic substitution of similar elements. Of these alloys (Ti₃₃Zr₃₃Hf₃₃)₅₀(Ni₅₀Cu₅₀)₄₀Al₁₀ was chosen in this study to investigate the structural relaxation and glass transition behavior. The as-quenched (Ti₃₃Zr₃₃Hf₃₃)₅₀(Ni₅₀Cu₅₀)₄₀Al₁₀ alloy was fully amorphous and had a wide supercooled liquid region ΔT = T_x(503 °C) − T_g(433 °C) = 70 °C, where T_g and T_x are the glass transition and crystallization temperatures, respectively. Low temperature pre-heat treatments of the (Ti₃₃Zr₃₃Hf₃₃)₅₀(Ni₅₀Cu₅₀)₄₀Al₁₀ alloy for 10 min at 310 °C, 370 °C and 390 °C caused structural relaxation accompanied by the formation of very fine scale lattice ordering. After these heat treatments, the glass transition became hard to observe in the (Ti₃₃Zr₃₃Hf₃₃)₅₀(Ni₅₀Cu₅₀)₄₀Al₁₀ alloy. Increasing the pre-heat treatment temperatures and holding times caused the glass transition to become more clearly detectable with increasing endothermic heat release.     

Structural investigations of nitrided Nb2O5 and Nb2O5–SiO2 sol–gel derived films

Sol–gel derived xNb₂O₅–(100 ? x)SiO₂ films (where x = 100, 80, 60, 50, 40, 20, 0 mol%) were nitrided at various temperatures (800 °C, 900 °C, 1000 °C, 1100 °C and 1200 °C). The structural transformations occurring in the films as a result of ammonolysis were studied using X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The XRD results have shown that the temperatures below 1100 °C were too low to obtain a pure NbN phase in the samples. The AFM observations indicate that the formation of the NbN phase and the size of NbN grains are related to the silica content in the layer. NbN grains become more regular and larger as the niobium content increases. The maximum grain size of about 100 nm was observed for x = 100. Preparation of the Nb₂O₅–SiO₂ sol–gel derived layers and the subsequent nitridation is a promising method of inducing crystalline NbN in amorphous matrices. It follows from the XPS results that a small amount of Nb₂O₅ remains in the films after nitridation at 1200 °C and that nitrogen reacted not only with Nb₂O₅ but also with SiO₂.     

Optical band gap and Raman spectra in some (Bi2O3)x(WO3)y(TeO2)100−x−y and (PbO)x(WO3)y(TeO2)100−x−y glasses

The glasses representing (Bi₂O₃)_x(WO₃)_y(TeO₂)_100?x?y and (PbO)_x(WO₃)_y(TeO₂)_100?x?y systems were prepared. The dilatometric glass-transition temperatures of examined glass samples were found in the region 383–434 °C, the coefficient of thermal expansion varied from 12 to 16 ppm/°C and the density ranged from 6.30₂ to 6.80₈ g/cm³. From the optical transmission measurements of thin glassy bulk samples prepared by a glass blowing, the optical gap values were found in the narrow region 3.21–3.36 eV. For the temperature interval 300–480 K, the values of the temperature coefficient of the optical band gap varied from 3.7 × 10^?4 to 5.24 × 10^?4 eV/K. It is suggested that Raman feature observed at around 350 cm^?1 can be assigned to an overlap of Raman bands attributed to WO₆ corner shared octahedra and to the following three atomic linkages: Bi–O–Te, Pb–O–Te and W–O–Te.