The improvement of pyroelectric properties of PZT thick films on Si substrate by TiOx barrier layer

The effects of TiO_x diffusion barrier layer thickness on the microstructure and pyroelectric characteristics of PZT thick films were studied in this paper. The TiO_x layer was prepared by thermal oxidation of Ti thin film in air and the PZT thick films were fabricated by electrophoresis deposition method (EPD). To demonstrate the barrier effect of TiO_x layer, the electrode/substrate interface and Si content in PZT thick films were characterized by scanning electron microscope (SEM) and X-ray energy dispersive spectroscopy (EDS), respectively. The TiO_x barrier thickness shows significant influence on the bottom electrode and the pyroelectric performance of the PZT thick films. The average pyroelectric coefficient of PZT films deposited on 400 nm TiO_x layer was about 8.94 × 10⁻⁹ C/(cm² K), which was improved by 70% than those without diffusion barrier layer. The results showed in this study indicate that TiO_x barrier layer has great potential in fabrication of PZT pyroelectric device.     

Characterization of CdS1−xSex thin films by chemical bath deposition technique

The cadmium sulfo selenide CdS_1?xSe_x thin films were chemical bath deposited in aqueous media onto coated glass substrates. As-deposited CdS_1?xSe_x thin films were annealed at 350 °C in air for 30 min. The structural, morphological, compositional and optical properties of deposited CdS_1?xSe_x thin films were studied using X-ray diffractometer (XRD), scanning electron microscopy (SEM), Energy dispersive analysis by X-ray (EDAX), and UV-Vis-NIR spectrophotometer respectively. X-ray diffraction patterns of CdS_1?xSe_x thin films reveal the polycrystalline nature and hexagonal structure. The microstructural parameters such as crystallite size (D), micro strain (?), and dislocation density were calculated and found to depend on compositions. The surface morphology and grain size are found to be influenced with the annealing temperature. The presence of Cd, S and Se of the CdS_1?xSe_x thin films and the composition of CdS_1?xSe_x thin film are estimated by EDAX analysis. The optical transmittance and absorption spectra were recorded in the range 400–2500 nm. The band gap of the CdS_1?xSe_x thin films is found to decrease from 2.5 eV to 1.75 eV.     

The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(1 1 1) substrates by MOCVD

In the present paper, the effects of nitridation on the quality of GaN epitaxial films grown on Si(1 1 1) substrates by metal–organic chemical vapor phase deposition (MOCVD) are discussed. A series of GaN layers were grown on Si(1 1 1) under various conditions and characterized by Nomarski microscopy (NM), atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), and room temperature (RT) photoluminescence (PL) measurements. Firstly, we optimized LT-AlN/HT-AlN/Si(1 1 1) templates and graded AlGaN intermediate layers thicknesses. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.2 μm. Secondly, the effect of in situ substrate nitridation and the insertion of an Si_xN_y intermediate layer on the GaN crystalline quality was investigated. Our measurements show that the nitridation position greatly influences the surface morphology and PL and XRD spectra of GaN grown atop the Si_xN_y layer. The X-ray diffraction and PL measurements results confirmed that the single-crystalline wurtzite GaN was successfully grown in samples A (without Si_xN_y layer) and B (with Si_xN_y layer on Si(1 1 1)). The resulting GaN film surfaces were flat, mirror-like, and crack-free. The full-width-at-half maximum (FWHM) of the X-ray rocking curve for (0 0 0 2) diffraction from the GaN epilayer of the sample B in ω-scan was 492 arcsec. The PL spectrum at room temperature showed that the GaN epilayer had a light emission at a wavelength of 365 nm with a FWHM of 6.6 nm (33.2 meV). In sample B, the insertion of a Si_xN_y intermediate layer significantly improved the optical and structural properties. In sample C (with Si_xN_y layer on Al_0.11Ga_0.89N interlayer). The in situ depositing of the, however, we did not obtain any improvements in the optical or structural properties.     

Dielectric and piezoelectric properties of Li-substituted lead-free (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3–BaTiO3 ceramics

Lead-free 0.79(Bi_0.5Na_0.5)TiO₃–0.14[Bi_0.5(K_0.5−xLi_x)]TiO₃–0.07BaTiO₃ (BNBK79 + xLi, x = 0.0, 0.1, 0.2, 0.25, 0.3, and 0.4) ceramics were prepared by conventional solid state reaction process. The crystalline structures and surface morphologies are investigated by X-ray diffraction method and scanning electron microscopy. Dielectric and piezoelectric properties were measured. With increasing of lithium substitution, the Curie temperatures of BNBK79 + xLi ceramics increase, but the maximum value of the dielectric constant decreases. And a relatively large remnant polarization of 17.6 μC/cm² and 157 pC/N of d₃₃ has been obtained when x = 0.3.     

Influence of growth morphology on the Néel temperature of CrRu thin films and heterostructures

Dimensionality effects on epitaxial and polycrystalline Cr_1?xRu_x alloy thin films and in Cr/Cr–Ru heterostructures are reported. X-ray analysis on Cr_0.9965Ru_0.0035 epitaxial films indicates an increase in the coherence length in growth directions (1 0 0) and (1 1 0) with increasing thickness (d), in the range 20≤d≤300 nm. Atomic force microscopy studies on these films shows pronounced vertical growth for d>50 nm, resulting in the formation of columnar structures. The Néel temperatures (T_N) of the Cr_0.9965Ru_0.0035 films show anomalous behaviour as a function of d at thickness d≈50 nm. It is interesting to note that this thickness corresponds to that for which a change in film morphology occurs. Experiments on epitaxial Cr_1?xRu_x thin films, with 0≤x≤0.013 and d=50 nm, give T_N–x curves that correspond well with that of bulk Cr_1?xRu_x alloys. Studies on Cr/Cr_0.9965Ru_0.0035 superlattices prepared on MgO(1 0 0), with the Cr layer thickness varied between 10 and 50 nm, keeping the Cr_0.9965Ru_0.0035 thickness constant at 10 nm, indicate a sharp decrease in T_N as the Cr separation layers reaches a thickness of 30 nm; ascribed to spin density wave pinning in the Cr layers for d<30 nm by the adjacent CrRu layers.     

Tuneability of Sm(1 − x)CexFeO3 ± λ perovskites: Thermal stability and electrical conductivity

Trimetallic perovskite oxides, Sm_(1 ? x)Ce_xFeO_3 ± λ (x = 0–0.05), were prepared by thermal decomposition of amorphous citrate precursors followed by calcinations. The material properties of the substituted perovskites were characterized by X-ray diffraction (XRD), X-ray florescence spectroscopy (XRF), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The doped materials exhibited a single perovskite phase in air up to 1350 °C and have specific surface areas in the range of 2.696–8.665 m²/g. In reducing atmosphere (5%v/vH₂/N₂), the unsubstituted perovskite (x = 0) decomposed into two phases while the ceria stabilized materials (x = 0.01, x = 0.03, x = 0.05) remained in a single phase as revealed by XRD analysis. Their conductivities were measured by the four point probe method in air and in dilute hydrogen (5%v/vH₂/N₂) separately. The ceria substituted materials show increased stability versus reduction and phase separation for a wide temperature range (up to 1000 °C). Although undoped SmFeO₃ has higher conductivity under oxidizing conditions than ceria doped SmFeO₃ due its p-type nature, the situation is reversed under reducing conditions. The ceria substituted perovskites (Sm_(1 ? x)Ce_xFeO_3 ± λ, x = 0–0.05) showed higher conductivity in reducing than in oxidizing conditions, suggesting that ceria doping at the A-site has changed the SmFeO₃ from p-type to n-type semi-conducting behavior.     

Effect of calcination atmosphere on photoluminescence properties of nanocrystalline ZrO2 thin films prepared by sol–gel dip coating method

Highly transparent and homogeneous nanocrystalline ZrO₂ thin films were prepared by the sol–gel dip coating method. The X-ray diffraction (XRD) pattern of ZrO₂ thin films calcined in air, O₂ or N₂ shows the formation of tetragonal phase with varying crystallite size. X-ray photoelectron spectroscopy (XPS) gives Zr 3d and O 1s spectra of thin film annealed in air, which reveal zirconium suboxide component (ZrO_x, 0<x<2), Zr–O bond and surface defects. An average transmittance greater than 85% (in UV–vis region) is observed in all calcined samples. Photoluminescence (PL) reveals an intense emission peak at 379 nm and weak peaks at 294, 586 and 754 nm for ZrO₂ film calcined in air. An enhancement of PL intensity and red-shift is observed in films calcined in O₂ and N₂ atmosphere. This is due to the reconstruction of zirconium nanocrystal interfaces and vacancies, which help passivate the non-radiative defects. The oxygen deficient defect, which is due to the distorted Zr–O bond, is suggested to be responsible for photoluminescence. The defect states in the nanocrystalline zirconia thin films play an important role in the energy transfer process. The luminescence defects in the film make it suitable for gas sensors development and tunable lasers.     

Effect of manganese ions concentration on the anatase–rutile phase transformation of TiO2 films

The phase structures of Ti_1?xMn_xO₂ (0?x<0.08) films synthesized by sol–gel spin coating have been investigated. The effect of Mn dopants on the stability of titanium dioxide (TiO₂) was studied by X-ray diffraction and Raman spectra for isochronally annealed samples. The increased Mn dopant concentration decreased the onset temperature of anatase–rutile (A–R) phase transformation. The calculated activation energy for the phase transformation decreased from 173.6 to 89.4 kJ/mol with Mn dopants concentration increasing from 0% to 7.51%. The Mn ions incorporated into the TiO₂ lattice reduce the rutile nucleation barrier and promote the nucleation rate.     

Nb doping effect on TiO2−x films for bolometer applications

Nb-doped TiO_2−x thin films were deposited using a 1 at% niobium doped titanium target by RF reactive magnetron sputtering at various oxygen partial pressures (pO₂). The films appeared amorphous in the pO₂ range of 4.4–4.7% with resistivity ranging from 0.39 Ω cm to 2.48 Ω cm. Compared to pure TiO_2−x films, the resistivity of the Nb-doped TiO_2−x films did not change sensitively with the oxygen partial pressure, indicating that the resistivity of the films can be accurately controlled. 1/f noise parameter of Nb-doped TiO_2−x films were found to decrease largely while the measured temperature coefficient of resistance (TCR) of the films was still high. The obtained results indicate that Nb-doped TiO_2−x films have great potential as an alternative bolometric material.     

The interfacial effect on ionic conduction of AgI–anatase TiO2 composites

AgI–anatase TiO₂ nanoparticle composites, (x)AgI–(1 ? x)anatase, with different porosities were fabricated over a wide range of 0–1 of AgI content. The electrical conductivity was measured at room temperature as function of AgI content (x) and porosity (p). The conductivity varies considerably with both x and p. In the vicinity of x = 0.4 and p = 0.31, the conductivity attains a maximum (2.5 × 10^? 3 S/cm). The conductivity is enhanced by three orders of magnitude in comparison with that of pristine AgI. The mechanism of the observed conductivity enhancement is discussed in the light of the scanning electron microscope images and X-ray diffraction patterns of the different (x)AgI–(1 ? x)anatase composites.     

Study of Schottky contact between Au and NiO nanowire by conductive atomic force microscopy (C-AFM): The case of surface states

In this work, NiO nanowires have been synthesized by a hydrothermal reaction of NiCl₂ with Na₂C₂O₄ in the presence of ethylene glycol at 180 °C for 12 h, then calcinated at 400 °C for 2 h. The NiO nanowires were analyzed by means of scanning electron microscope (SEM), atomic force microscope (AFM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The resulting current–voltage (I–V) characteristics of the NiO nanowires exhibited a clear rectifying behavior. This rectify behavior was attributed to the formation of a Schottky contact between Au coated atomic force microscopy (AFM) tip and NiO nanowires (nano-M/SC) which was dominated by the surface states in NiO itself. Photo-assisted conductive AFM (PC-AFM) was used to demonstrate how the I–V characteristics are influenced by the surface states. Our I–V results also showed that the nano-M/SCs had a good photoelectric switching effect at reverse bias.     

Structural characterization of the V2O5/TiO2 system obtained by the sol–gel method

The influence of the vanadium load and calcination temperature on the structural characteristics of the V₂O₅/TiO₂ system was studied by X-ray diffraction and X-ray absorption spectroscopy (XAS) techniques. Samples of the V₂O₅/TiO₂ system were prepared by the sol–gel method under acid conditions and calcined at different temperatures. The rutile phase was found to predominate in pure TiO₂ calcined at 450 °C as a result of the reduction of phase transition temperature promoted by the sol–gel method under acid conditions. The anatase phase became predominant at 450 °C as the amount of vanadium increased from 6 to 9 wt%. A structural change in the TiO₂ phase from predominantly anatase to totally rutile with increased calcination temperature was observed in 6 wt% samples. An analysis of the vanadium X-ray Absorption Near Edge Structure (XANES) spectra showed that the oxidation state of vanadium atoms in the samples containing 6 and 9 wt% of vanadium and calcined at 450 °C was predominantly V⁴⁺. However, the presence of V⁵⁺ atoms cannot be ruled out. A qualitative analysis of extended X-ray absorption fine structure (EXAFS) spectra of the samples containing 6 and 9 wt% of vanadium calcined at 450 °C showed that the local structure around vanadium atoms is comparable to that of VO₂ crystalline phase, in which vanadium atoms are fourfold coordinated in a distorted structure. For the sample after calcination at 600 °C, the EXAFS and XANES results showed that a significant portion of vanadium atoms were incorporated in the rutile lattice with a V_xTi_(1−x)O₂ solid solution formation. The conditions of sample preparation used here to prepare V₂O₅/TiO₂ samples associated with different amounts of vanadium and calcination temperatures proved to be useful to modifying the structure of the V₂O₅/TiO₂ system.     

Titanium oxide thin layers deposed by dip-coating method: Their optical and structural properties

TiO₂ thin films were prepared by sol-gel method. The structural investigations performed by means of X-ray diffraction (XRD) technique and scanning electron microscopy (SEM) showed the shape structure at T = 600 °C. The optical constants of the deposited film were obtained from the analysis of the experimentally recorded transmittance spectral data in the wavelength of 200–3000 nm range. The values of some important parameters of the studied films are determined, such as refractive index n and thickness d. In this work, using the transmission spectra, we have calculated the dielectric constant (ε_∞) for four layered TiO₂ films; a simple relation is suggested to estimate the third-order optical nonlinear susceptibility χ⁽³⁾. It has been found that the dispersion data obeyed the single oscillator of the Wemple–DiDomenico model, from which the dispersion parameters and high-frequency dielectric constant were determined. The estimations of the corresponding band gap E_g, χ⁽³⁾ and ε_∞ are 2.57 eV, 0.021 · 10⁻¹⁰ esu and 5.20, respectively.     

Sonochemical preparation of SbS1−xSexI nanowires

A sonochemical method for direct preparation of nanowires of SbS_1?xSe_xI solid solution has been established. The SbS_1?xSe_xI gel was synthesized using elemental Sb, S, Se and I in the presence of ethanol under ultrasonic irradiation (35 kHz, 2 W/cm²) at 50 °C for 2 h. The product was characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, energy dispersive X-ray analysis, selected area electron diffraction, and optical diffuse reflection spectroscopy. The SEM and HRTEM investigations exhibit that the as-prepared samples are made up of large quantity nanowires with lateral dimensions of about 10–50 nm and lengths reaching up to several micrometers and single-crystalline in nature. The increase of molar composition of Se affects linear decrease of the indirect forbidden optical energy gap as well as the distance between (121) planes of the SbS_1?xSe_xI nanowires.     

Composition-dependent metal-insulator transition in perovskite CaXPb(1−X) TiO3 (CPT) ceramic

Ceramic compositions of a complex perovskite Ca_XPb(_1?X)TiO₃ (CPT) systems with x=0.6, 0.7 and 0.8 were prepared by mechanical mixing of their oxides (CaTiO₃ and PbTiO₃). The structure of the (CPT) ceramics was characterized by X-ray diffraction (XRD) The ceramics transform gradually from orthorhombic phase (pseudo cubic phase) to cubic phase by increasing pb content percent. The dc resistivity ρ(t) versus temperature (range 300–525 K) for x=0.6, 0.7 and 0.8. The ρ.T/curves reveal that samples exhibit a metallic behaviour at low temperature and undergo a metal-semiconductor transition with increasing temperature at T_p=373 K, 343 K and 333 K, for x=0.6, 0.7 and 0.8, respectively. The nature of conduction mechanism is studied in semiconductor region by studying the current–voltage temperature characteristics. The current–voltage characteristics were interpreted in terms of Poole–Frenkel type of conduction mechanism.     

Annealing temperature dependent on structural,optical and electrical properties of indium oxide thin films deposited by electron beam evaporation method

In the present work the influence of annealing temperature on the structural and optical properties of the In₂O₃ films deposited by electron beam evaporation technique in the presence of oxygen was studied. The deposited films were annealed from 350 to 550 °C in air. The chemical compositions of In₂O₃ films were carried out by X-ray photoelectron spectroscopy (XPS). The film structure and surface morphologies were investigated as a function of annealing temperature by X-ray diffraction (XRD) and atomic force microscopy (AFM). The structural studies by XRD reveal that films exhibit preferential orientation along (2 2 2) plane. The refractive index (n), packing density and porosity (%) of films were arrived from transmittance spectral data obtained in the range 250–1000 nm by UV–vis-spectrometer. The optical band gap of In₂O₃ film was observed and found to be varying from 3.67 to 3.85 eV with the annealing temperature.     

Luminescent properties of red-emitting LiSr4B3O(9−3x/2)Nx:Eu2+ phosphor for white-LEDs

An Eu²⁺-activated oxynitride LiSr_(4?y)B₃O_(9?3x/2)N_x:yEu²⁺ red-emitting phosphor was synthesized by solid-state reactions. The synthesized phosphor crystallized in a cubic system with space group Ia–3d. The LiSr₄B₃O_(9?3x/2)N_x:Eu²⁺ phosphors exhibited a broad red emission band with a peak at 610 nm and a full width at half maximum of 106 nm under 410 nm excitation, which is ascribed to the 4f⁶5d¹→4f⁷ transition of Eu²⁺. The optimal doped nitrogen concentration was observed to be x=0.75. The average decay times of two different emission centers were estimated to be 568 and 489 ns in the LiSr_3.99B₃O_8.25N_0.5:0.01Eu²⁺ phosphors, respectively. Concentration quenching of Eu²⁺ ions occurred at y=0.07, and the critical distance was determined as 17.86 Å. The non-radiative transitions via dipole–dipole interactions resulted in the concentration quenching of Eu²⁺-site emission centers in the LiSr₄B₃O₉ host. These results indicate LiSr₄B₃O_(9?3x/2)N_x:Eu²⁺ phosphor is promising for application in white near-UV LEDs.     

Superconductivity in bulk T′-(La,Sm)2CuO4 prepared via a molten alkaline hydroxide route

We have synthesized La_2?xSm_xCuO₄ (0 ? x ? 2.0) with the Nd₂CuO₄ structure via a molten alkaline hydroxide route at temperatures as low as 400–480 °C. After reduction heat treatment in vacuum at 600–750 °C for removal of excess oxygen atoms at the interstitial apical site, superconductivity with T_c = 20–24 K was observed in the samples with x = 0.05–1.0. The superconducting volume fraction is nearly 100% for x = 0.3–0.7. Our results demonstrate that La_2?xSm_xCuO₄ with no nominal carrier doping is a bulk superconductor.     

Antiferromagnetic ordering in the double perovskites La2−xSrxCoRuO6

The electric transport and magnetic susceptibility of double perovskites La_2?xSr_xCoRuO₆ have been studied over a temperature range up to 800–1000 K. The crystal and magnetic structure has been determined by neutron diffraction on two samples of the series, x=0.6 and 1.4, which represent the electron- and hole-doped systems with respect to “ideal” single-valent insulator x=1. The study shows that spins in both the Co and Ru f. c. c. like sublattices exhibit a long-range ordering of the antiferromagnetic type II (T_N=60 K for x=0.6 and T_N=60–80 K for x=1.4).     

Interfacial reactions of Ba2YCu3O6+z with coated conductor buffer layer,LaMnO3

Chemical interactions between the Ba₂YCu₃O_6+x superconductor and the LaMnO₃ buffer layers employed in coated conductors have been investigated experimentally by determining the phases formed in the Ba₂YCu₃O_6+x–LaMnO₃ system. The Ba₂YCu₃O_6+x–LaMnO₃ join within the BaO–(Y₂O₃–La₂O₃)–MnO₂–CuO_x multi-component system is non-binary. At 810 °C (p_O2 = 100 Pa) and at 950 °C in purified air, four phases are consistently present along the join, namely, Ba_2?x(La_1+x?yY_y)Cu₃O_6+z, Ba(Y_2?xLa_x)CuO₅, (La_1?xY_x)MnO₃, (La,Y)Mn₂O₅. The crystal chemistry and crystallography of Ba(Y_2?xLa_x)CuO₅ and (La_1?xY_x)Mn₂O₅ were studied using the X-ray Rietveld refinement technique. The Y-rich and La-rich solid solution limits for Ba(Y_2?xLa_x)CuO₅ are Ba(Y_1.8La_0.2)CuO₅ and Ba(Y_0.1La_1.9)CuO₅, respectively. The structure of Ba(Y_1.8La_0.2)CuO₅ is Pnma (No. 62), a = 12.2161(5) Å, b = 5.6690(2) Å, c = 7.1468(3) Å, V = 494.94(4) Å³, and D_x = 6.29 g cm^?3. YMn₂O₅ and LaMn₂O₅ do not form solid solution at 810 °C (p_O2 = 100 Pa) or at 950 °C (in air). The structure of YMn₂O₅ was confirmed to be Pbam (No. 55), a = 7.27832(14) Å, b = 8.46707(14) Å, c = 5.66495(10) Å, and V = 349.108(14) Å³. A reference X-ray pattern was prepared for YMn₂O₅.