Two-electron photon emission from metallic quantum wells

Unusual emission of visible light is observed in scanning tunneling microscopy of the quantum well system Na on Cu(111). Photons are emitted at energies exceeding the energy of the tunneling electrons. Model calculations of two-electron processes which lead to quantum well transitions reproduce the experimental fluorescence spectra, the quantum yield, and the power-law variation of the intensity with the excitation current.     

Square wells,quantum wells and ultra-thin metallic films

Abstract

The eigenvalue equations for the energy of bound states of a particle in a square well are solved, and the exact solutions are obtained, as power series. Accurate analytical approximate solutions are also given. The application of these results in the physics of quantum wells are discussed, especially for ultra-thin metallic films, but also in the case of resonant cavities, heterojunction lasers, revivals and super-revivals.     

Onsager relations and hydrodynamic balance equations in 2D quantum wells

We clarify the role of heat flux in the hydrodynamic balance equations in 2D quantum wells, facilitating the formulation of an Onsager relation within the framework of this theory. We find that the Onsager relation is satisfied within the framework of the 2D hydrodynamic balance equation transport theory at sufficiently high density. The condition of high density is consonant with the requirement of strong electron-electron interactions for the validity of our balance equation formulation.     

2D quantum gravity from quantum entanglement

In quantum systems with many degrees of freedom the replica method is a useful tool to study the entanglement of arbitrary spatial regions. We apply it in a way that allows them to backreact. As a consequence, they become dynamical subsystems whose position, form, and extension are determined by their interaction with the whole system. We analyze, in particular, quantum spin chains described at criticality by a conformal field theory. Its coupling to the Gibbs' ensemble of all possible subsystems is relevant and drives the system into a new fixed point which is argued to be that of the 2D quantum gravity coupled to this system. Numerical experiments on the critical Ising model show that the new critical exponents agree with those predicted by the formula of Knizhnik, Polyakov, and Zamolodchikov.     

-Factor tuning of 2D electrons in double-gated Si/SiGe quantum wells

We report on the design and first experiments of Si/SiGe heterostructures that allow gate-operated shifting of a 2D electron gas between two channels with different Landé g-factors. This allows gate-operated moving of electrons in and out of resonance in an electron spin resonance (ESR) experiment, which can act as a building block of a proposed solid-state quantum computer. We use MBE-grown modulation-doped quantum-wells (QWs) on SiGe pseudosubstrates with up to 30% Ge and low-temperature electron mobilities up to . A double QW structure with two different Ge contents separated by a thin barrier was optimized for this purpose with self-consistent simulations. The band structure simulations show that by applying gate voltages one can completely shift the wave function from one well to the other. First experiments on pure Si channels show the working of the gate setup. Both carrier density and mobility can be increased by using the back gate which corresponds to shifting the wave function in the channel.     

Terahertz electromagnetic radiation from quantum wells

The observation of terahertz electromagnetic dipole radiation from quantum well structures has finally proven the existence of charge oscillations in semiconductors associated with wave packet dynamics. This article closely examines the physics behind the emission of terahertz electromagnetic radiation from excitonic charge oscillations in such quantum well structures, points out similarities and differences between the various generation schemes, and discusses the various relaxation mechanisms involved. Finally, we show how both amplitude and phase of charge oscillations and the corresponding terahertz emission can be manipulated using phase-locked optical pulses.     

Photoemission from InAs/GaAs quantum dots decorated with cesium adatoms

An array of non-overgrown InAs/GaAs quantum dots has been decorated with adsorbed metal atoms in situ in ultrahigh vacuum. Their electron and photoemission properties have been studied. The radical modification of the spectra of the threshold emission from the quantum dots with increasing cesium coating has been found. Two photoemission channels have been established; they are characterized by considerably different intensities, spectral locations, and widths of the selective bands. It has been shown that the decoration of the quantum dots makes it possible to control the electronic structure and quantum yield of photoemission, the nature of which is related to the excitation of the electronic states of the GaAs substrate and InAs/GaAs quantum dots.     

Mid-infrared luminescence from coupled quantum dots and wells

Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 μm. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. The overall transition energy of the combined dot–well system is generally reduced with respect to the dots and well only but the dependence on spacer thickness is more complex than that expected from a simple envelope function model.     

Blue luminescence from the InGaN multiple quantum wells

We have fabricated very high-quality In_0.13Ga_0.87N/GaN multiple quantum wells with thickness as small as on (0 0 0 1) sapphire substrate using metal organic chemical vapour deposition (MOCVD). We have investigated these ultra-thin multiple quantum wells by continuous wave (cw) and time resolved spectroscopy in the picosecond time scales in a wide range of temperatures from 10 K to 290 K. In the luminescence spectrum at 10 K we observed a broad peak at 3.134 eV which was attributed to the quantum wells emission of InGaN. The full-width at half-maximum of this peak was 129 meV at 10 K and the broadening at low temperatures which was mostly inhomogeneous was thought to be due to compositional fluctuations and interfacial disorder in the alloy. The ultra narrow width of the quantum well was found to have a very profound effect in increasing the emission linewidth. We also observed an intense and narrow peak at 3.471 eV due to the GaN barrier. The temperature dependence of the luminescence was studied. The peak positions and intensities of the different peaks were obtained after a careful Lorentzian analysis. The activation energy of the InGaN quantum well emission peak was estimated as 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K. The results were explained by considering the localization of the excitons due to potential fluctuations. At higher temperatures the non-radiative recombination was found to be very dominant.     

Dimensional magnetoplasma resonance of 2D holes in (001) GaAs/AlGaAs quantum wells

Dimensional magnetoplasma resonance is observed and studied in a spatially confined, two-dimensional hole system in (001) GaAs/AlGaAs single quantum wells. From the analysis of the field dependence of the magnetoplasma resonance on the diameter of the 2D system, the semiclassical cyclotron hole mass is determined. Its value is found to be equal to 0.26m ₀ (m ₀ is the free electron mass), which considerably exceeds the theoretically predicted value. A method is proposed for a direct determination of the concentration and mobility of 2D holes from the analysis of the magnetoplasma resonance.     

Screening of excitonic states by low-density 2D charge carriers in GaAs/AlGaAs quantum wells

Screening of excitonic states by a system of 2D electrons (or holes) in GaAs/AlGaAs single quantum wells is studied. With increasing concentration of 2D charge carriers, a threshold-type disappearance of excitonic states is observed in both luminescence and reflectance spectra. The higher the quality of the 2D system, the lower the corresponding threshold concentration. In the best systems, the collapse of excitonic states occurs at unexpectedly low electron densities n _e =5×10⁹ cm^?2, which correspond to the mean dimensionless distance between the particles r _s =8. This value far exceeds the threshold values observed for 3D systems (r _s ≈2), as well as the values obtained for quantum wells in previous studies. The problem of measuring the concentration of low-density 2D charge carriers in photoexcitation conditions is solved by applying the method of optical detection of the dimensional magnetoplasma resonance. This method provides reliable measurements of the density of a 2D system to the values about 10⁹ cm^?2.     

Trions in quantum wells

An overview is given of our investigation of the energy levels and of the correlation functions of the negatively and positively charged excitons (also called trions) in quantum wells in the presence of a perpendicular magnetic field. A detailed comparison is made with available experimental data in III–V and II–VI semiconductor quantum wells.     

Bipolariton in quantum wells

Il Nuovo Cimento D - We develop the bipolariton concept for a quasi-2D excitonic molecule (m) in quantum wells (QWLs). The bipolariton wave equation, which includes both the exciton-exciton (x-x)...     

Visible emission from ZnCdO/ZnO multiple quantum wells

Polar c‐axis oriented Zn_0.75Cd_0.25O/ZnO multiple quantum wells (MQWs), grown by pulsed‐laser deposition (PLD), emitting in the visible spectral range are reported. By applying a low growth temperature of ≈300 °C a large Cd content of 0.25 and abrupt interfaces could be achieved using PLD. The emission energy was tuned from the green to the violet spectral range (2.5 eV to 3.1 eV) by tuning the quantum well thickness. It is determined by the quantum confinement effect and the quantum‐confined Stark effect. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

     

Resonant-Raman scattering from quasi-localized excitons in semiconductor quantum wells

Large polarization-dependent resonance enhancement is observed in first and second order Raman scattering in multiple quantum well $\text{GaAs}\text{(Al}{}_{\mathrm{x}}\text{Ga}{}_{\mathrm{1-x}}\text{)As}$ and $\text{GaAs}\text{AlAs}$ semiconductor heterostructures. Resonance enhancement is much stronger in the forbidden polarization than in the allowed and shows double resonance behaviour at incoming and outgoing photon energies. The resonance is stronger at incoming photon energies for one-phonon scattering and at outgoing photon energies for two-phonon scattering.