Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma

JETP Letters - It is shown that the treatment of stoichiometric HfO2, which is synthesized by atomic layer deposition, in electron cyclotron resonance hydrogen plasma leads to a significant...     

对ECR离子源多极磁场结构的改进

Experiments have shown that especially the radial magnetic field component plays a crucial role in the production of highly charged ions with Electron Cyclotron Resonance Ion Sources(ECRIS).However, in several room temperature operating ECRISs the radial magnetic field strength is below the optimum value, mainly due to the limits in permanent magnet technology.Remarkable radial magnetic field improvement can be reached with a relatively simple and cost-effective idea called Modified MultiPole Structure(MMPS).The MMPS differs strongly from the former structures because here the magnetic field is increased only locally without affecting the plasma size.The idea was studied experimentally with a new MMPS plasma chamber prototype,which was designed and constructed for the JYFL 6.4GHz ECRIS.The new chamber is versatile and made it possible to perform several new types of measurements.These showed that the MMPS is especially applicable to increase very high charge-state ion production.Typically the ion current increases more than a factor of 2 in the case of highly charged ions such as Ar~(16 ).     

Effect of F- and CH-Doped on Dielectric Properties of SiCOH Films Deposited by Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma

We investigate the effect of CH-doped and F-doped on dielectric properties of SiCOH films deposited by de- camethylcyclopentasiloxane （DMCPS） electron cyclotron resonance plasma. The dielectric constant k is closely related to the configurations of films. For the films deposited only using DMCPS, the minimum k is as low as 2.88. By adding CH4 in the precursor, the k value can be reduced to 2.45 due to the film density decreasing by incorporating large size CHx groups. By adding CHF3 in the precursor, the k value can also be reduced to 2.48 due to the incorporation of the weak-polarization F atom. Thus the dielectric constant for SiCOH films depends on not only the film density but also the polarization of atoms. By increasing the film density or by reducing the polarization of atoms under the condition of a lower film density, the low dielectric constant SiCOH films can be obtained.     

Electron Cyclotron Resonance Heating (ECRH) of a Spheromak Plasma

ECRH calculations are carried out for the MS Spheromak (Bto = 20-25 kG, ne ? 1014 cm-3) under the assumption of a straight-line ray path. These preliminary calculations indicate that for "end-on" illumination of the Spheromak plasma by an extraordinary wave at the second harmonic of the cyclotron frequency, almost complete single-pass absorption is achieved even when electron temperature is low (? 100 eV). The use of gyrotrons currently under development would make an early experimental demonstration possible.     

Optical Properties of the SiOx (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide

Optics and Spectroscopy - The optical properties and composition of thermal silicon oxide thin films processed in a hydrogen electron cyclotron resonance plasma have been studied by ellipsometry,...     

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of an InGaAlP Compound Semiconductor System

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated because some of the new devices are based on a wider diversity of materials to be etched. Conventional RIE (reactive ion etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. In this article, we suggest high-density plasmas such as ECR (electron cyclotron resonance) and ICP (inductively coupled plasma), for the etching of ternary compound semiconductors (InGaP, AlInP, AlGaP) that are employed for electronic devices such as heterojunction bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. Operating at lower pressure, high-density plasma sources are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms that are described in this article can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride, because the InGaAlP system shares many of the same properties.     

Stability of the Electron Cyclotron Resonance

We consider the magnetic AC Stark effect for the quantum dynamics of a single particle in the plane under the influence of an oscillating homogeneous electric and a constant perpendicular magnetic field. We prove that the electron cyclotron resonance is insensitive to impurity potentials.     

Features of Wave Propagation in an Inhomogeneous Plasma near the Electron Cyclotron Resonance

JETP Letters - Features of the propagation of electromagnetic waves in an inhomogeneous plasma at frequencies close to the electron-cyclotron resonance have been studied experimentally. It has been...     

Mass Spectrometry Investigation on Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma for SiCOH Film Deposition

We investigate the fragmentation behaviour of decamethylcyclopentasiloxane （DMCPS） plasma using a quadrupole mass spectrometry, which is used as the precursor to deposit SiCOH film in an electron cyclotron resonance （ECR） plasma system. The structure of DMCPS molecules comprises a fivefold Si-O ring and ten -CH3 groups bonded at five Si atoms. In ECR discharge plasma, the main fragmentation behaviour of DMCPS includes two stages. One is the breaking of fivefold Si-O rings and then the formation of threefold Si-O rings and Si-O chain species. The other is the decomposing of hydrocarbon groups from Si atoms and then the crosslink of hydrocarbon species. Combined with the bonding configuration of SiCOH films, the relation between species in ECR plasma and films structures is analysed.     

Time Evolution of High-Energy Bremsstrahlung and Argon Ion Production in Electron Cyclotron Resonance Ion-Source Plasma

Bremsstrahlung radiation measurement is one of the most commonly used plasma-diagnostics methods. Most of the bremsstrahlung measurements with electron cyclotron resonance ion sources (ECRISs) have been performed in continuous-operation mode yielding information only on the steady-state bremsstrahlung emission. This paper describes results of bremsstrahlung and argon ion-current measurements with the JYFL 14-GHz ECRIS operated in a pulsed mode. The bremsstrahlung radiation was studied as a function of neutral-gas pressure and radio frequency power. The timescale of ECRIS bremsstrahlung production is compared to ion-production timescale for different charge states of argon for the first time. It was observed, for example, that the ion currents of different charge states reach the steady state before the bremsstrahlung emission rate saturates.      

Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment

We study the structural defects in the SiO, film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3]^2- defects are the luminescence centres of the ultraviolet photoluminescence （PL） from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3]^2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000℃ annealing, [-SiO3]^2- defects still exist in the films.     

X-Ray Measurements during Whistler-Mode Electron Cyclotron Resonance Plasma Startup and Heating in an Axisymmetric Magnetic Mirror

New measurements and analyses of whistler-mode electron cyclotron resonant heating (ECRH) startup and heating in an axisymmetric magnetic mirror are presented. Experimental studies of startup are presented which include the effects of initial neutral gas pressure on density and energy buildup rates, the effects of electron-beam-generated seed plasma on startup times, and a possible density threshold for the absolute whistler instability. Results of two types of analyses are presented. The first is a Fokker-Planck finite-element simulation the principal result of which is the prediction of the creation of a sloshing electron velocity distribution in the first 10 ?s after microwave power is applied. The second simulation uses rate equations to predict buildup, with rate coefficients based on a model sloshing-electron distribution function. Both results are consistent with experimental observations. Measurements of X-ray emission provided information about plasma transport, the sloshing electron spatial distribution, and the hot-electron average energy. The foil ratio technique gave average energies of 1-3 keV during whistler-mode ECRH, in agreement with afterglow measurements of hot electron decay. Possible applications of whistler-mode ECRH plasma production and heating are for plasma soft X-ray sources and plasma potential modification in tandem mirror machines.     

Low-Threshold Parametric Excitation of Electron Plasma Waves Localized in the Edge Transport Barrier of a Tokamak during Electron Cyclotron Resonance Heating of a Plasma

JETP Letters - The possibility of the localization of longitudinal waves in the intermediate frequency range in the edge transport barrier of a toroidal nuclear fusion facility is discovered. It is...     

托卡马克等离子体不同平衡位形下的电子回旋波电流驱动

在给定的等离子体总电流和中心电流密度条件下,数值求解平衡方程,求出不同拉长比和三角形变因子的托卡马克等离子体温度、密度、磁场分布,然后通过求解波迹方程和Fokker-Planck方程,分别计算这些位形下的电子回旋波波迹和电流驱动.结果表明：电子回旋波X模从顶部发射时,随着拉长比的增大,波迹会向弱场侧偏移.电子回旋波X模从弱场侧发射时,电子回旋波在等离子体中传播沉积的功率份额随着拉长比的增大而增加,驱动电流位置随着三角形变因子的增大向等离子体中心移动.驱动电流位置随环向和极向发射角的减小向中心移动,对应的电流密度峰值也变大.     

Optical Properties and Structure of Electroluminescent SiOx:Tb Films

Using nondestructive optical methods (measurement of transmission spectra in the visible and IR regions and multiangular ellipsometry), we have studied the structural changes in SiO _x :Tb films subjected to high–temperature annealing in air, which are responsible for the appearance of electroluminescence in light–emitting structures based on them. It has been established that the appearance of green electroluminescence in such a film (upon annealing of the film in air at temperatures of 600–800°C) is due to the structural changes in its matrix, leading to partial disproportionation of the thermally deposited SiO _x :Tb film (as a result, the film represents a mixture of several phases – Si, SiO_x, and SiO₂). Films showing blue electroluminescence (annealing temperature 1000°C) are characterized by a higher content of oxygen, a better compactness, and a better macroscopic homogeneity in comparison with films showing green electroluminescence. It is also shown that the thermal cycling accompanying the annealing leads to the appearance of birefringence and scattering in SiO _x O:Tb films. It is anticipated that the annealing–stimulated structural changes taking place at both the micro– and the macrolevel should cause changes in the local surroundings of the luminescence center and in the conditions for heating the charge carriers exciting the luminescence centers.     

Observation of Localized Electron Cyclotron Resonance Heating in a Magnetic Mirror

A right-hand circularly polarized (RHCP) electron cyclotron wave is launched along the axis of a steady-state magnetically confined plasma column. Detailed measurements of the spatial variation of electron temperature, density, plasma potential, and wave amplitude about the resonance zone are presented. In particular, data are presented where the temperature increase due to electron cyclotron resonance heating (ECRH) is strongly localized near the resonance position. A numerical wave heating model has been developed for electrons in a magnetic mirror and is found to be in qualitative agreement with observations.     

Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition

JETP Letters - Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under...     

On the Possibility of Strong Anomalous Absorption of Microwaves in Experiments on Electron Cyclotron Plasma Heating at the Second Resonance Harmonic

JETP Letters - It has been shown that more than two thirds of the pumping power can be transmitted to the upper hybrid waves localized near the local maximum of the plasma density as a result of...     

电子回旋共振放电电离特性的PIC/MCC模拟

A theoretical and computational model is presented to study the ionization of the argon electron cyclotron resonance(ECR)microwave discharge using a quasi-three-dimensional electromagnetic particle-in- cell plus Monte Carlo collision method.The interaction between the charged particles and microwave fields are described by the electromagnetic mode of particle-in-cell method.The collision processes are treated with Monte Carlo method.The simulation code is the original work.The results of the particle simulation for the ECR discharge of argon gas which include the microscopic features of charged particles and the electromagnetic characteristics of the ECR discharge plasma,and also the transient phenomena have been presented.