Electronic transport properties of mixed transition metal ions doped borophosphate glasses

A series of borophosphate glasses in the composition (B₂O₃)_0.10–(P₂O₅)_0.40–(CuO)_0.50?x–(MoO₃)_x; 0.05 ? x ? 0.50 have been investigated for room temperature density and dc conductivity over the temperature range from 350 to 650 K. The density decreased with increase in MoO₃ over the composition range studied except a slight increase around 0.35 mole fraction. The observed initial decrease in conductivity with the addition of MoO₃ has been attributed to the hindrance offered by the Mo⁺ ions to the electronic motions. The observed peak-like behavior in conductivity in the composition range 0.20 – 0.50 mol% of MoO₃ is ascribed to the mixed transition metal ion effect (MTE). Mott’s small polaron hopping model has been used to analyze the high temperature conductivity data and the activation energy for conduction has been determined. The low temperature conductivity has been analyzed in view of Mott’s and Greaves variable range hopping models. It is for the first time that conduction mechanisms have been explored and MTE detected in mixed transition metal ions doped borophosphate glasses.     

Electrical conductivity and dielectric relaxation in non-crystalline films of tungsten trioxide

Amorphous tungsten trioxide (a-WO₃) thin films were prepared by thermal evaporation technique. The electrical conductivity and dielectric properties of the prepared films have been investigated in the frequency range from 100 Hz to 100 kHz and in the temperature range 293–393 K. In spite of the absence of the dielectric loss peaks, application of the dielectric modulus formulism gives a simple method for evaluating the activation energy of the dielectric relaxation. The frequency dependence of σ(ω) follows the Jonscher’s universal dynamic law with the relation σ(ω) = σ_dc + Aω^s, where s is the frequency exponent. The conductivity in the direct regime, σ_dc, is described by the small polaron model. The electrical conductivity and dielectric properties show that Hunt’s model is well adapted to a-WO₃ films.     

Dielectric behavior and impedance spectroscopy of bismuth iron phosphate glasses

The electrical and dielectrical properties of Bi₂O₃–Fe₂O₃–P₂O₅ glasses were measured by impedance spectroscopy in the frequency range from 0.01 Hz to 4 MHz and over the temperature range from 303 to 473 K. It was shown that the dc conductivity strongly depends on the Fe₂O₃ content and Fe(II)/Fe_tot ratio. With increasing Fe(II) ion content from 17% to 34% in the bismuth-free 39.4Fe₂O₃–59.6P₂O₅ and 9.8Bi₂O₃–31.7Fe₂O₃–58.5P₂O₅ glasses, the dc conductivity increases. On the other hand, the decrease in dc conductivity for the glasses with 18.9 mol% Bi₂O₃ is attributed to the decrease in Fe₂O₃ content from 31.7 to 23.5 mol%, which indicates that the conductivity for these glasses depends on Fe₂O₃ content. The conductivity for these glasses is independent of the Bi₂O₃ content and arises mainly from polaron hopping between Fe(II) and Fe(III) ions suggesting an electronic conduction. The evolution of the complex permittivity as a function of frequency and temperature was investigated. At low frequency the dispersion was investigated in terms of dielectric loss. The thermal activated relaxation mechanism dominates the observed relaxation behavior. The relationship between relaxation parameters and electrical conductivity indicates the electronic conductivity controlled by polaron hopping between iron ions. The Raman spectra show that the addition of up to 18.9 mol% of Bi₂O₃ does not produce any changes in the glass structure which consists predominantly of pyrophosphate units.     

Low temperature dielectric dispersion and electrical conductivity studies on Fe2O3 mixed lithium yttrium silicate glasses

Lithium yttrium silicate glasses mixed with different concentrations of Fe₂O₃ of the composition (40 ? x) Li₂O–10Y₂O₃–50SiO₂: x Fe₂O₃, with x = 0.3, 0.5, 0.8, 1.0, 1.2 and 1.5 (all in mol%) were synthesized. Electrical and dielectric properties including dielectric constant, ε′(ω), loss, tan δ, ac conductivity, σ_ac, impedance spectra as well as electric moduli, M(ω), over a wide continuous frequency range of 40 Hz to 10⁶ Hz and in the low temperature range 100 to 360 K were measured as a function of the concentration of Fe₂O₃. The dc conductivity is also evaluated in the temperature range 100 … 360 K. The temperature and frequency dispersions of dielectric constant as well as dielectric loss have been analyzed using space charge polarization model. The ac and dc conductivities have exhibited increasing trend with increasing Fe₂O₃ content beyond 0.5 mol%, whereas the activation energy for the conductivity demonstrated decreasing tendency in this dopant concentration range. Both quantum mechanical tunneling (QMT) and correlated barrier hopping models (CBH) were used for clarification of ac conductivity origin and the corresponding analysis has indicated that CBH model is more appropriate for this glass system. For the better understanding of relaxation dynamics of the electrical properties we have drawn the scaling plots for ac conductivity and also electric moduli. The plots indicated that the relaxation dynamics is independent on temperature but depends on concentration of Fe₂O₃. The dc conductivity is analyzed using small polaron hoping model. The increase of conductivity with the concentration of Fe₂O₃ beyond 0.5 mol% is explained in terms of variations in the redox ratio of iron ions in the glass network. The results were further analyzed quantitatively with the support of experimental data from IR, optical absorption and ESR spectral studies. The overall analysis has indicated that Li₂O–Y₂O₃–SiO₂ glasses containing more than 0.5 mol% of Fe₂O₃ are more suitable for achieving good electrical conductivity in these glasses.     

Polarons in boron doped iron phosphate glasses

The electrical conductivity and dielectric properties of xB₂O₃–(40 ? x)Fe₂O₃–60P₂O₅ (x = 6–20, mol%) glasses were investigated in the frequency range from 0.01 Hz to 1 MHz and the temperature range from 303 K to 523 K. At temperatures below 523 K an ac conductivity and the dielectric constant follow the universal dielectric response (UDR), being typical for hopping or tunneling of localized charge carriers. A detailed analysis of the temperature dependence of the UDR parameter s in terms of the theoretical model for tunneling of small polarons revealed that below 523 K this mechanism governs the charge transport in these glasses. The comparison of the values of characteristic coefficients W_∞ and α determined by two different methods confirms the polaronic behavior of boron doped iron phosphate glasses.     

Electronic conductivity in zinc iron phosphate glasses

The electrical properties of (40−x)ZnO–xFe₂O₃–60P₂O₅ (x = 10, 20, 30 mol%) glasses were measured by impedance spectroscopy in the frequency from 0.01 Hz to 4 MHz and the temperature range from 303 to 473 K. It was shown that the dc conductivity strongly depends on the Fe₂O₃ content and Fe(II)/Fe_tot ratio. The increase in dc conductivity for these glasses is attributed to the increase in Fe₂O₃ content from 10 to 30 mol%. With increasing Fe(II) ion content from 6% to 17% the dc conductivity increases. This indicated that the conductivity arises mainly from polaron hopping between Fe(II) and Fe(III) ions suggesting an electron conduction in these glasses. By applying scaling on conductivity data measured at different temperatures, single master curve was obtained for each glass. On the other hand, deviation from the master curve at high frequencies was observed for glasses with different compositions. This deviation originates from a various mobility of charge carriers in different glass structures. Raman spectra showed the change of structure, from metaphosphate to pyrophosphate, with increasing Fe₂O₃ content from 10 to 30 mol%.     

Electrical properties of TiO2 thin films

The electrical properties of n-type titanium dioxide thin films deposited by magnetron-sputtering method have been investigated by temperature-dependent conductivity. We observed that the temperature dependence of the electrical conductivity of titanium dioxide films exhibits a crossover from T^?1/4 to T^?1/2 dependence in the temperature range between 80 and 110 K. Characteristic parameters describing conductivity, such as the characteristic temperature (T₀), hopping distance (R_hop), average hopping energy (Δ_hop), Coulomb gap (Δ_C), localization length (ξ) and density of states (N(E_F)), were determined, and their values were discussed within the models describing conductivity in TiO₂ thin films.     

ac conductivity in a-Ge–Se–Bi glasses

In the present paper the effect of Bi impurity (low ∼4 at.% and high ∼10 at.%) on the ac conductivity (σ_ac) of a-Ge₂₀Se₈₀ glassy alloy is studied and the experimentally deduced values are fitted with theoretically deduced values by using correlated barrier hopping model (CBH). Frequency dependent ac conductance of the samples over a frequency range of 100–50 kHz has been taken in the temperature range (268–360 K). At frequency 2 kHz and temperature 298 K, the value of ac conductivity (σ_ac) decreases at low concentration of Bi (4 at.%). However, the value of σ_ac increases at higher concentration of Bi (10 at.%). The ac conductivity is proportional to ω^s for undoped and doped samples. The value of frequency exponent (s) decreases as the temperature increases. These results have been explained on the basis of some structural changes at low and high concentration of Bi impurity.     

The role of vanadium valence states and coordination on electrical conduction in lithium iodide borate glasses mixed with small concentration of silver iodide

LiI–AgI–B₂O₃ glasses mixed with different concentrations of V₂O₅ (ranging from 0 to 1.0 mol%) were prepared. Electrical and dielectric properties over wide ranges of frequency (10^?2–10⁷ Hz) and temperature (173–523 K) have been studied. Additionally spectroscopic properties viz., optical absorption and ESR spectra have been investigated. The optical absorption and ESR studies have revealed that vanadium ions do exist in both V⁴⁺ and V⁵⁺ states and the redox ratio is the highest in the glasses containing 0.8 mol% of V₂O₅. The results of conductivity measurements have indicated that there is a mixed conduction (both ionic and electronic). The ionic conduction seems to be dominant over polaron hopping only in the glasses containing V₂O₅ more than 0.8 mol% of V₂O₅. The impedance spectra have also indicated that the conduction is predominantly polaronic in nature. The frequency and temperature dependence of the electrical moduli as well as dielectric loss parameters have exhibited relaxation character attributed to the vanadyl complexes. The relaxation effects have been analyzed by the graphical method and from this analysis it has been established that there is a spreading of relaxation times. The results have been further discussed quantitatively in the light of different valance states of vanadium ions with the aid of the data on spectroscopic properties.     

Effect of vacuum annealing on charge transport and trapping in a-Si1 − xCx:H/c-Si heterostructures

The processes of charge transport and trapping in amorphous Si_1 ? xC_x:H films deposited on crystalline p-type Si wafers and annealed in vacuum in the temperature range 300–650 °C have been evaluated. Current–voltage (I–V), capacitance–voltage (C–V) and admittance–temperature (G–T) characteristics were measured in the temperature range 100–350 K. The spectrum of thermal effusion of hydrogen was measured from room temperature up to 1000 °C.C–V characteristics indicate a slight increase of the dielectric constant k and a large hysteresis after annealing at 450 °C. The hysteresis is believed to be associated with mobile hydrogen effusion from the a-SiC:H film, and it is not seen after a 650 °C anneal. From I–V data the maximum rectification ratio is observed after annealing at 450 °C. Variable-range hopping (VRH) conduction at the Fermi level is found to dominate the forward current of the as-deposited structure. After annealing at 450 °C the forward current can be described by space-charge limited (SCL) mechanisms with trapping at shallow levels with energy of about 0.12 eV. After annealing at 650 °C the process of VRH conduction appears again, but the density of hopping sites is much higher than in the as-grown sample. From admittance spectra, the energy position of respective traps in a-SiC:H is at (E_V + 0.45) eV for as-deposited material and it decreases slightly after vacuum annealing. On the basis of these results, an energy band diagram of the a-Si_1 ? xC_x:H/p-Si structure annealed at 450 °C is proposed.     

Electrical properties of bulk amorphous semiconductor (GaSb)38Ge24

Temperature dependences of the dc conductivity and thermopower of a (GaSb)₃₈Ge₂₄ homogeneous bulk amorphous alloy are investigated at 110–425 K and at 180–400 K, respectively. The samples were prepared by spontaneous solid-state amorphization of a quenched crystalline high-pressure phase heated from 77 to 430 K at ambient pressure. In contrast to the parent amorphous GaSb compound exhibiting an unusual combination of electrical properties, amorphous (GaSb)₃₈Ge₂₄ is found to be a typical p-type semiconductor well described by the conventional Mott–Davis model.     

Temperature dependency of impedance spectroscopy behaviors in side-chain liquid crystalline polymer

In this paper, the electrical properties of side-chain liquid crystalline polymer (SLCP) are investigated by impedance spectroscopy technique. We report the measurement of dielectric and conductivity for SLCP from 1 kHz to 10 MHz within the temperature range from 300 to 370 K. The DC conductivity obeys Arrhenius law and it gives a small deviation at 315 K. The activation energies are equal to 0.20 eV and 0.75 eV for high and low temperatures, respectively. The frequency dependence of conductivity satisfies the power law, σ_AC = Aw^s, with s = 0.50–0.57. The evaluated power law exponent s exhibits nearly linear decreasing behavior with temperature. This suggests that the Correlated Barrier Hopping (CBH) model is the operating mechanism.     

Relaxation of polaronic charge carriers in lithium manganese spinels

Lithium manganese spinels Li_1+xMn_2−xO₄, 0 ⩽ x ⩽ 0.33, were prepared by wet chemistry technique followed by heat-treatment at 750 °C or 800 °C. Differential scanning calorimetry was used to reveal phase transitions. Electrical properties were studied by impedance spectroscopy. LiMn₂O₄ exhibited phase transition below room temperature. The transition, seen as an exothermic event in DSC and a steep decrease of conductivity upon cooling, was sharp in sample sintered at 800 °C and broadened over a range of temperature in sample sintered at 750 °C. In the low temperature phase of LiMn₂O₄, two relaxations of similar strength were observed in the frequency dependent permittivity. The low frequency process was identified as relaxation of charge carriers since the relaxation frequency followed the same temperature dependence as the dc conductivity. The high frequency process exhibited milder temperature dependence and was attributed to dipolar relaxation in the charge-ordered structure. The dipolar relaxation was barely visible in Li substituted samples, x ⩾ 0.05, which did not undergo structural phases transition. Measurements extended to liquid nitrogen temperature showed gradual lowering of the activation energy of conductivity and relaxation frequencies, behavior typical for phonon-assisted hopping of small polarons.     

Crystallization behavior of e-beam evaporated Ga5Ge15Te80 thin films

Ga₅Ge₁₅Te₈₀ thin films have been deposited by e-beam evaporation method. The chemical composition of the deposited films was identified using energy dispersive X-ray spectrometry. The electrical conductivity, σ of the deposited films during heating/cooling cycles was investigated in the temperatures 298–570 K. The conductivity curve showed two sudden upward trends during the first heating cycle. The first upward trend occurs in the temperature range 408–430 K and was attributed to the amorphous-to-crystalline phase transformation. While the second is in the temperature range 470–495 K, and can be attributed to the crystallization process. However, for second heating cycle the conductivity curve becomes reversible. The optical band gap of the as-deposited and annealed film at annealing temperature 423 K was determined from the recorded transmittance and reflectance spectra. The obtained results were confirmed throughout the X-ray and transmission electron microscope studies.     

Enhancement in electrical and stability properties of amorphous polymer based nanocomposite electrolyte

A novel combination of dispersed phase polymer nanocomposite electrolyte (PNCE) series based on an amorphous polymer host (PMMA)₄–LiClO₄ complex dispersed with nanocrystalline CeO₂ is reported. XRD analysis has confirmed the dispersed phase nanocomposite formation. Effect of nano CeO₂ dispersion on ion–ion and ion–polymer interactions has been analyzed. A drastic enhancement in electrical conductivity, by 2 orders of magnitude at 30 °C and 5 orders of magnitude at 100 °C, has occurred on nano CeO₂ dispersion when compared with room temperature conductivity of undispersed PS film. An excellent correlation between variation of d.c. conductivity and free mobile charge carriers has been observed. An ion conduction model is proposed. Strength of the model lies in the experimental evidences from FTIR, conductivity and TEM analyses. Thermal analysis indicates a strong dependence of thermodynamical parameters, e.g., glass transition temperature (T_g), crystalline melting temperature (T_m), enthalpy etc. on filler addition. Substantial improvement in voltage stability (~ 4.4 V), thermal stability and ion transport properties has been noticed on nano CeO₂ dispersion.     

Electrical conductivity and single oscillator model properties of amorphous CuSe semiconductor thin film

The structural, optical dispersion and electrical conductivity properties of the CuSe thin film have been investigated using X-ray diffraction, electrical and optical characterization methods. X-ray diffraction results indicate that CuSe thin film has an amorphous structure. The electrical conductivity of the CuSe film increases with increasing temperature. The activation energy and room temperature conductivity values of the film were found to be 1.32 meV and 3.89 × 10⁻³ S/cm, respectively. The refractive index dispersion of the thin film obeys the single oscillator model and single oscillator parameters were determined. The E_o, n_∞, and S_o values of the CuSe thin film were found to be 5.08 eV, 3.55 and 1.92 × 10¹⁴ m⁻², respectively. The obtained results suggest that CuSe film is an amorphous semiconductor.     

Electrical properties of annealed a-SiC:H thin films

In the present work the dependence of electrical properties of a-SiC:H thin films on annealing temperature, T_a, has been extensively studied. From the measurements of dark dc electrical conductivity, σ_D, in the high temperature range (from 283 up to 493 K), was found that the conductivity activation energy, E_a, is invariant for T_a ⩽ 673 K and equal to 0.64 eV, whereas for T_a from 673 up to 873 K, E_a increases at about 0.2 eV reaching to a maximum value 0.85 eV at T_a = 873 K, suggesting the optimum material quality. This behavior of E_a as a function of T_a is mainly attributed to relaxation of the strain in the amorphous network, which is possibly combined with weak hydrogen emission for temperatures up to 873 K. For further increase of T_a (>873 K) the phenomenon of hydrogen emission, causes rapid decrease of E_a down to 0.24 eV at T_a = 998 K, deteriorating the material quality. These results are also supported by the measurements of dark dc electrical conductivity in the low temperature range (from 133 up to 283 K), where the dependence of the density of gap states at the Fermi level, N(E_F), on annealing temperature presents the minimum value at T_a = 873 K. The Meyer–Nelder rule was found to hold for the a-SiC:H thin films for annealing temperatures up to 873 K. Finally, the dependence of dark dc electrical conductivity at room temperature, σ_DRT, on T_a showed to reflect directly the dependence of E_a on T_a.     

Electrical characterizations of silver chalcogenide glasses

We present a study of the electrical properties of silver chalcogenide glasses ‘40AgI’–30Ag₂S–30GeS₂, 45AgI–27.5Ag₂S–27.5GeS₂ and 50AgI–25Ag₂S–25GeS₂ in the 77–400 K temperature and the 20 Hz to 1 MHz frequency ranges. In our temperature range, a large variation of the real permittivity is observed, in relation with an electrodes polarization effect. As the amount of silver iodide increases in the Ag₂S–GeS₂ matrix, the glass transition temperature and the activation energies decrease, the electrical conductivity increases and reaches 4 Ω⁻¹ m⁻¹ at room temperature for the glass with 50% AgI. The study of the conductivity shows a behavior due to a high ionic conductivity, thermally activated with E_dc = 0.21 eV, E₁ = 0.075 eV (40AgI–30Ag₂S–30GeS₂, 45AgI–27.5Ag₂S–27.5GeS₂), E_dc = 0.17 eV, E₁ = 0.055 eV for 50AgI–25Ag₂S–25GeS₂. For these glasses, we have seen three conductivity regimes. The first two terms are thermally activated. The third term cannot be actually clearly identified because either it is thermally activated with a very low activation energy and frequency dependent, or it is almost non-thermally activated and frequency dependent.     

Mixed conductivity in tungstenite–phosphate glasses containing alkali metal ions

The conductivity of glasses in the 50WO₃–(50 ? x)P₂O₅–xA₂O (A = Na, K, Cs) system has been investigated as a function of composition. It is shown that in tungstenite–phosphate glasses containing different alkali metal ions the conductivity decreases with an increase in the alkali metal ion content. A decrease in conductivity is larger for heavier ions and reaches more than seven orders of magnitude in the case of glass containing Cs₂O. This behavior remains in contrast to the literature data on conductivity in transition metal oxide glasses containing alkali metal ions where usually strong conductivity anomalies of several orders of magnitude at certain amount of ions are observed. No necessity of ion–polaron interaction has been pointed out.     

Electrical properties of A2.6+xTi1.4−xCd(PO4)3.4−x (A = Li,K; x = 0.0–1.0) phosphate glasses

Electrical properties of A_2.6+xTi_1.4−xCd(PO₄)_3.4−x (A = Li, K; x = 0.0–1.0) phosphate glasses are investigated over a frequency range from 42 Hz to 1 MHz at different temperatures. Impedance spectroscopy is used to separate the bulk conductivity from electrode effect of electrical conductivity data. The bulk dc conductivity is Arrhenius activated, with activation energies and pre-exponential factors following the Meyer–Neldel rule. The real part of ac conductivity shows universal power law feature. The variation of dielectric constant with frequency is attributed to ion diffusion and polarization occurring in the phosphate glasses. The frequency dependent imaginary part of electric modulus M″(ω) plot shows non-Debye feature in conductivity relaxation. The Kohlrausch–Williams–Watts stretched exponential function was used to describe the modulus spectra and the stretching exponent β is found to be temperature independent. Scaling in M″(ω) shows that the electrical relaxation mechanisms are independent of temperature for given composition at different temperatures.